Diodes Incorporated AP9214L-AB-HSB-7

Overview

AP9214L-AB-HSB-7 from Diodes Incorporated is a single-chip Li+ battery protection IC integrating dual N-channel MOSFETs (R_SS(ON) = 13 mΩ typ at V_DD = 4.0 V) and precision voltage/current detection circuitry for 1-cell rechargeable battery packs. It provides overcharge (3.5–4.5 V, ±25 mV), overdischarge (2.0–3.4 V, ±35 mV), discharge/charge overcurrent (±15 mV), short-circuit (±100 mV), and overvoltage charger (8.0 V fixed, ±2 V) protection with built-in delay timers and 0V charge enable.

For engineers reviewing the AP9214L-AB-HSB-7 datasheet, AP9214L-AB-HSB-7 pinout, AP9214L-AB-HSB-7 application in Li+ battery packs, or AP9214L-AB-HSB-7 equivalent for portable power management, this page delivers verified specifications, dual-pinout package details, functional timing behavior, and real-world implementation guidance - all grounded in Diodes' DS38413 Rev. 4-3.

Technical Context

The AP9214L-AB-HSB-7 implements independent high-accuracy analog comparators for six protection thresholds (VCU, VCL, VDL, VDU, VDOC, VCOC, VSHORT, VOVCHG), each with programmable hysteresis and ±20% delay tolerance. Its logic circuit controls two integrated N-MOSFETs sharing a common drain (EP pad), enabling bidirectional current path switching without external FETs.

It supports two operational modes: Power-Down (0.1 µA standby, requires charger wake-up) and Auto-Wake-Up (5.5 µA standby, recovers autonomously on voltage rise). The VM pin senses both charge/discharge current via R2 and charger presence, while internal RVMD/RVMS resistors (300 kΩ/30 kΩ typ) enable status pull-up/pull-down without external components.

Key Specifications

Pinout & Package

AP9214L-AB-HSB-7 uses the U-DFN2535-6 (Type B) package with Option 1 pin configuration (S1–VSS–VDD–NC–S2–VM–EP). The exposed thermal pad (EP) serves as the common drain node for both integrated N-MOSFETs and must be soldered to a large copper area for thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1-cell Li+ battery protection applications.

Compared with S-8261A and RP502K, the AP9214L-AB-HSB-7 uniquely combines ultra-low R_SS(ON), factory-programmed 0V charge, and overvoltage charger detection in a single U-DFN2535-6 package - delivering lower system cost, smaller footprint, and enhanced safety for regulated medical and premium portable devices.

Availability

AP9214L-AB-HSB-7 is available at Aetrix Electronics and suitable for power bank protection, wireless earbud battery packs, medical wearable sensors, and Bluetooth tracker tags requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for AP9214L-AB-HSB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and consumer markets.

The AP9214L belongs to Diodes' battery protection IC product line, engineered specifically for space-constrained, high-safety 1-cell Li+ applications where integration, accuracy, and ultra-low quiescent current are critical design requirements.

FAQ

What is the function of the NC pin (Pin 4) on AP9214L-AB-HSB-7?

Pin 4 is unconnected (NC) and has no internal bond wire or circuit connection. It must remain electrically floating - no trace, pad, or solder should be attached. This pin exists solely for mechanical symmetry in the U-DFN2535-6 (Type B) package layout and does not affect operation or reliability.

Can AP9214L-AB-HSB-7 support both charge and discharge overcurrent protection simultaneously?

Yes. The AP9214L-AB-HSB-7 independently monitors VM-to-VSS voltage for discharge overcurrent (V_DOC = 0.05–0.32 V) and VM-to-VSS polarity reversal for charge overcurrent (V_COC = −0.2 to −0.05 V). Each triggers dedicated MOSFET shutdown paths: S1 for discharge faults and S2 for charge faults - enabling true bidirectional current protection.

How does the 0V battery charge function operate in the AB variant?

In the AB variant, the 0V charge function is factory-enabled. When battery voltage is 0 V, the IC allows charger current to flow through the body diode of the charging MOSFET (S2→EP) until V_BAT rises above 1.2 V (V_0CHA), at which point the charging MOSFET turns on fully. This avoids permanent cell damage from prolonged deep discharge.

Is the EP thermal pad required to be grounded on the PCB?

Yes. The EP pad is the common drain node for both integrated N-MOSFETs and must be soldered to a solid, low-impedance ground plane. Diodes recommends ≥100 mm² copper area connected to system ground via ≥4 thermal vias (0.3 mm diameter) to maintain junction temperature below 125°C at 7.1 A continuous current.