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Renesas AT25DF011-MAHNGU-Y
- Part No.:
- AT25DF011-MAHNGU-Y
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-UFDFN Exposed Pad
- Datasheet:
-
AT25DF011-MAHNGU-Y.pdf
- Description:
- IC FLASH 1MBIT SPI 104MHZ 8UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,068
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Product details
Overview
AT25DF011-MAHNGU-Y from Renesas Electronics is a 1-Mbit SPI serial Flash memory IC designed for code shadowing and embedded data storage in low-voltage, space-constrained systems. It operates from 1.65 V to 3.6 V, supports SPI Modes 0/3 and Dual-Output Read, delivers 104 MHz max clock frequency, and features 6 ns clock-to-output timing - enabling fast boot and firmware update in portable medical devices, IoT edge nodes, and industrial controllers.
For engineers reviewing the AT25DF011-MAHNGU-Y datasheet, AT25DF011-MAHNGU-Y pinout, AT25DF011-MAHNGU-Y application, or AT25DF011-MAHNGU-Y equivalent, this page provides verified electrical specs, package mapping, real-world use scenarios, and validated alternative parts for rapid BOM validation and layout-ready integration.
Technical Context
The AT25DF011-MAHNGU-Y implements a dedicated SPI interface with hardware-controlled write protection via WP pin and HOLD functionality for pause/resume of serial transfers without chip deselection. Its dual-output read mode uses both SI and SO pins as outputs (I/O0/I/O1) to deliver two bits per SCK falling edge, doubling effective throughput versus standard read.
Internally, it integrates a flexible erase architecture supporting four granularities: 256-byte page, 4-kByte block, 32-kByte block, and full-chip erase - optimized for co-located code + data storage. A 128-byte OTP security register includes 64 bytes factory-programmed unique ID and 64 bytes user-programmable space for secure device serialization.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Mbit (128 KBytes), sufficient for bootloader + configuration + small firmware images in resource-limited microcontrollers. |
| Supply Voltage Range | 1.65 V to 3.6 V - enables direct interfacing with 1.8 V and 3.3 V logic domains without level shifters. |
| Max Clock Frequency | 104 MHz - supports high-speed read access critical for fast boot time in real-time embedded systems. |
| Read Timing (tV) | 6 ns clock-to-output - ensures minimal latency between SCK falling edge and valid data on SO/SI during Dual-Output Read. |
| Erase Granularity | 256-byte page, 4-kByte block, 32-kByte block, full chip - allows precise overwriting of firmware segments without disturbing adjacent code or calibration data. |
| OTP Security Register | 128-byte register with 64-byte factory-unique ID and 64-byte user-programmable space - enables secure device binding and anti-cloning in certified medical or industrial equipment. |
| Power-Down Current | 200 nA ultra-deep power-down (typical) - extends battery life in always-on sensor nodes and wearable electronics. |
Pinout & Package
AT25DF011-MAHNGU-Y is packaged in an 8-lead SOIC (150-mil) with standard JEDEC footprint, compatible with automated PCB assembly and reflow processes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select input | Active-low enable signal; must transition low-to-high to complete any command, including self-timed program/erase cycles. |
| SCK | Serial clock input | Controls data latching (rising edge) and output timing (falling edge); supports up to 104 MHz for high-throughput reads. |
| SI (I/O0) | Serial input / Dual-Output Read data output | Input for commands, addresses, and data; becomes bidirectional I/O0 during Dual-Output Read to double data rate. |
| SO (I/O1) | Serial output / Dual-Output Read data output | Primary data output; remains active I/O1 during Dual-Output Read, paired with SI to output two bits per SCK cycle. |
| WP | Hardware write protect input | Low-active pin enabling sector-level lock via status register; internally pulled high - can be left floating if unused. |
| HOLD | Serial communication pause input | Halts ongoing SPI transfer without deselecting device or resetting internal state; requires CS asserted and SCK low to activate. |
| VCC | Power supply | Single 1.65–3.6 V rail powers all logic and memory functions - no auxiliary voltage required for programming or erase. |
| GND | Ground reference | System ground connection; essential for stable read/write margins and EMI control in mixed-signal PCB layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-Output Read support | Enables 2-bit-per-cycle data transfer using SI and SO simultaneously, increasing effective read bandwidth by 100% vs standard SPI read at same clock rate. |
| Flexible erase architecture | 256-byte page erase minimizes wasted space when updating small firmware patches or logging data, avoiding full-block erasure overhead. |
| 128-byte OTP security register | Factory-programmed 64-byte unique ID + 64-byte user space provide tamper-resistant device identity for regulatory compliance (e.g., FDA, IEC 62304). |
| Ultra-deep power-down mode | 200 nA typical current draw extends shelf life and operational runtime in battery-powered applications such as remote sensors and asset trackers. |
| Hardware + software protection | Combines WP pin-based sector locking with status register-controlled software protection for layered firmware integrity in safety-critical systems. |
Applications
| Medical Wearable Boot Storage | Industrial PLC Firmware Update |
|---|---|
Use Scenario: Stores bootloader and diagnostic firmware in compact wearable ECG monitors requiring <100 ms cold-boot time and zero external power during standby. IC Role / Device Role / Timing Role: Nonvolatile code storage with fast 104 MHz read and 6 ns tV, enabling immediate instruction fetch upon wake-up from ultra-deep power-down. Use Value: Eliminates need for external RAM shadowing; 200 nA deep sleep current extends single-cell coin-cell battery life to >2 years. |
Use Scenario: Hosts field-upgradable firmware and configuration tables in DIN-rail mounted programmable logic controllers operating in harsh 0–70 °C industrial environments. IC Role / Device Role / Timing Role: Dual-Output Read accelerates firmware verification post-update; 4-kByte block erase isolates patch updates from core runtime code. Use Value: Reduces update downtime by 40% vs standard SPI Flash; hardware WP pin prevents accidental overwrite during EMC transients. |
| Smart Home Sensor Node Data Log | Automotive Body Control Module EEPROM Replacement |
Use Scenario: Logs temperature/humidity events in battery-powered smart thermostats with 10-year data retention requirement and intermittent wireless upload. IC Role / Device Role / Timing Role: Data storage with 256-byte page erase granularity allows efficient appending without erasing entire sectors containing calibration constants. Use Value: 100,000 program/erase cycles at 85 °C ensures >15 years of daily logging; 25 µA standby current avoids parasitic drain. |
Use Scenario: Replaces legacy parallel EEPROM in automotive BCMs where space, cost, and SPI compatibility are critical constraints. IC Role / Device Role / Timing Role: SPI-compatible nonvolatile memory storing seat position, mirror settings, and lighting profiles with guaranteed 20-year data retention. Use Value: 1.65–3.6 V operation matches automotive 12 V regulator output; 128-byte OTP stores VIN-linked calibration keys for anti-theft pairing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q80DVSSIG | 8-Mbit density, 104 MHz max clock, same SOIC-8 package, but lacks Dual-Output Read and OTP register. | Better suited for larger firmware images; not appropriate where dual-read throughput or secure serialization is required. | Select when higher capacity is needed and OTP/dual-read are unnecessary; verify 1.65 V min operation at system VCC. |
| Micron MT25QL064ABA8ESF-0SIT | 64-Mbit density, quad-SPI interface, 133 MHz clock, SOIC-8, supports SFDP but no OTP register or ultra-deep power-down. | Targeted at high-bandwidth applications like FPGA configuration; incompatible with dual-output read protocol and ultra-low-power use cases. | Choose for systems needing quad-I/O performance and SFDP auto-configuration; avoid where sub-µA power-down or device ID binding is mandatory. |
Compared with W25Q80DVSSIG and MT25QL064ABA8ESF-0SIT, the AT25DF011-MAHNGU-Y uniquely balances ultra-low power (200 nA), secure serialization (128-byte OTP), and dual-output throughput in a 1-Mbit footprint - making it optimal for compact, battery-sensitive, and regulation-compliant designs where capacity is secondary to reliability and security.
Availability
AT25DF011-MAHNGU-Y is available at Aetrix Electronics and suitable for medical wearables, industrial PLCs, smart home sensors, and automotive body control modules requiring stable component supply across extended product lifecycles.
Supply support for AT25DF011-MAHNGU-Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.
The AT25DF011-MAHNGU-Y belongs to Renesas' serial Flash memory product line, engineered specifically for low-voltage, high-reliability embedded code and data storage with integrated security and power efficiency.
FAQ
What is the operating voltage range of the AT25DF011-MAHNGU-Y?
The AT25DF011-MAHNGU-Y operates from 1.65 V to 3.6 V across its full industrial temperature range (−40 °C to +85 °C). At extended temperature (−40 °C to +125 °C), the minimum supply voltage increases to 1.7 V. This wide range enables direct integration with 1.8 V and 3.3 V microcontroller I/O domains without level-shifting circuitry, simplifying board design for AT25DF011-MAHNGU-Y-based systems.
Does the AT25DF011-MAHNGU-Y support Dual-Output Read, and how does it improve performance?
Yes, the AT25DF011-MAHNGU-Y supports Dual-Output Read using opcode 0x3B, which configures both SI and SO pins as outputs (I/O0/I/O1) to deliver two bits per SCK falling edge. This doubles effective read throughput compared to standard single-output read (0x03), reducing firmware load time by up to 50% at the same clock frequency - a key advantage for AT25DF011-MAHNGU-Y in boot-critical applications.
What erase options does the AT25DF011-MAHNGU-Y offer, and why is granularity important?
The AT25DF011-MAHNGU-Y supports 256-byte page erase, 4-kByte block erase, 32-kByte block erase, and full-chip erase. Fine-grained 256-byte page erase prevents unnecessary erasure of adjacent firmware or calibration data during small updates - maximizing memory utilization and extending endurance. This makes AT25DF011-MAHNGU-Y especially valuable in systems where code and data share the same Flash array.
How is the OTP security register used in the AT25DF011-MAHNGU-Y?
The AT25DF011-MAHNGU-Y includes a 128-byte OTP security register: 64 bytes are factory-programmed with a unique device identifier, and 64 bytes are user-programmable for secure keys or serial numbers. Once written, OTP contents cannot be altered - enabling tamper-resistant device authentication, regulatory compliance tracking, and anti-counterfeiting in AT25DF011-MAHNGU-Y deployments.
What power-saving modes does the AT25DF011-MAHNGU-Y support, and what are their current draws?
The AT25DF011-MAHNGU-Y offers Deep Power-Down (5 µA typical) and Ultra-Deep Power-Down (200 nA typical) modes. Ultra-deep mode is entered via command 0xB9 and exited by CS toggle, making it ideal for long-term storage or battery-backed operation. These low-current states directly reduce system-level power budget - a defining feature of the AT25DF011-MAHNGU-Y in energy-constrained designs.
AT25DF011-MAHNGU-Y Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-UFDFN Exposed Pad
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 104 MHz
- Write Cycle Time - Word, Page:
- 8µs, 3.5ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-UDFN (2x3)
AT25DF011-MAHNGU-Y FAQ
1.How can I place an order for AT25DF011-MAHNGU-Y through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25DF011-MAHNGU-Y on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25DF011-MAHNGU-Y reliable?
The price and inventory of AT25DF011-MAHNGU-Y are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25DF011-MAHNGU-Y is usually 5 days.
3.What payment methods are accepted for AT25DF011-MAHNGU-Y?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25DF011-MAHNGU-Y transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25DF011-MAHNGU-Y?
AT25DF011-MAHNGU-Y orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25DF011-MAHNGU-Y order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25DF011-MAHNGU-Y?
For technical support, including AT25DF011-MAHNGU-Y datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25DF011-MAHNGU-Y requirements.
6.How does Aetrix verify that AT25DF011-MAHNGU-Y is sourced from the original manufacturer or authorized distributors?
All AT25DF011-MAHNGU-Y products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25DF011-MAHNGU-Y meets industry standards.
7.What is the process for return or replacement of AT25DF011-MAHNGU-Y?
All AT25DF011-MAHNGU-Y units undergo pre-shipment inspection (PSI). If there is an issue with AT25DF011-MAHNGU-Y, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25DF011-MAHNGU-Y part is unused and in its original packaging.
Return procedure for AT25DF011-MAHNGU-Y:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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