My Inquiry
My Account
Renesas AT25DF011-MAHN-Y
- Part No.:
- AT25DF011-MAHN-Y
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-UFDFN Exposed Pad
- Datasheet:
-
AT25DF011-MAHN-Y.pdf
- Description:
- IC FLASH 1MBIT SPI 104MHZ 8UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,924
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AT25DF011-MAHN-Y from Renesas Electronics is a 1-Mbit SPI serial Flash memory IC designed for code shadowing and embedded data storage in resource-constrained systems. It operates from 1.65 V to 3.6 V, supports SPI Modes 0/3, delivers 104 MHz max clock frequency, achieves 6 ns clock-to-output delay, and features dual-output read for enhanced throughput in microcontroller boot and firmware update applications.
For engineers reviewing the AT25DF011-MAHN-Y datasheet, AT25DF011-MAHN-Y pinout, AT25DF011-MAHN-Y application, or AT25DF011-MAHN-Y equivalent, key selection criteria include its 256-byte page erase granularity, 128-byte OTP security register with factory-programmed unique ID, ultra-deep power-down current (200 nA), and support for hardware write protection via WP pin in industrial temperature range.
Technical Context
The AT25DF011-MAHN-Y implements a flexible three-tier erase architecture-256-byte pages, uniform 4-kByte blocks, and 32-kByte blocks-enabling efficient co-location of code modules and data segments without memory waste. Its SPI interface uses standard four-wire signaling (CS/SCK/SI/SO) with rising-edge input capture and falling-edge output timing.
Dual-output read mode repurposes the SI pin as I/O0 alongside SO (I/O1) to deliver two bits per SCK cycle, doubling effective read bandwidth versus standard single-output mode. The device integrates hardware-controlled sector locking via the active-low WP pin and supports software-based protection through status register configuration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Mbit (131,072 bytes) - sufficient for MCU boot code, firmware images, and configuration data in space-limited designs. |
| Supply Voltage | 1.65 V to 3.6 V - enables direct interfacing with 1.8 V and 3.3 V logic domains without level shifters. |
| Max Clock Frequency | 104 MHz - supports high-speed read operations critical for fast boot and real-time firmware loading. |
| Read Latency | 6 ns clock-to-output (tV) - minimizes wait states during instruction fetch from external Flash. |
| Erase Granularity | 256-byte page / 4-kByte block / 32-kByte block - allows precise in-field updates without erasing unrelated code or data. |
| Power-Down Current | 200 nA ultra-deep power-down (typical) - extends battery life in always-on IoT edge nodes and portable devices. |
| Endurance & Retention | 100,000 program/erase cycles at -40°C to +85°C; 20-year data retention - suitable for long-life industrial deployments. |
Pinout & Package
AT25DF011-MAHN-Y is packaged in an 8-lead SOIC (150-mil) with standard JEDEC footprint and pinout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable signal; must transition low-to-high to terminate self-timed operations like erase or program. |
| SCK | Serial Clock | Master-generated clock; data latched on rising edge, output shifted on falling edge per SPI Mode 0/3. |
| SI (I/O0) | Serial Input / Dual-Output Data 0 | Command/address/data input; becomes output (I/O0) during dual-output read to double data rate. |
| SO (I/O1) | Serial Output / Dual-Output Data 1 | Data output; remains active (I/O1) during dual-output read, paired with SI for concurrent bit transfer. |
| WP | Write Protect | Hardware lock control; low assertion enables status register write and sector protection configuration. |
| HOLD | Communication Pause | Active-low hold signal; suspends SPI transfers without deselecting device or resetting internal state. |
| VCC | Power Supply | Single supply input (1.65–3.6 V); powers all internal logic and memory array-no auxiliary voltage required. |
| GND | Ground Reference | System ground return path; must be low-impedance to ensure stable read/write margins and noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-output read mode | Enables 2-bit-per-cycle data transfer using SI and SO pins, increasing effective read bandwidth by 100% over standard SPI read. |
| Flexible erase architecture | Supports 256-byte page, 4-kByte block, and 32-kByte block erase-reducing wasted space and enabling granular firmware updates. |
| 128-byte OTP security register | Contains 64 bytes factory-programmed unique identifier and 64 bytes user-programmable space for ESN, keys, or calibration data. |
| Ultra-deep power-down | Reduces current draw to 200 nA typical, extending battery life in maintenance-free sensor nodes and wearable devices. |
| Hardware write protection | WP pin provides physical lock control for protected sectors, preventing accidental writes during system operation or reset events. |
Applications
| Industrial HMI Boot Storage | IoT Edge Node Firmware |
|---|---|
Use Scenario: Stores boot loader and GUI assets for ARM Cortex-M based human-machine interface panels operating in factory environments. IC Role / Device Role / Timing Role: Non-volatile code storage with fast random-access read capability and deterministic 6 ns tV latency for zero-delay instruction fetch. Use Value: Enables sub-100 ms cold boot time and supports field firmware updates via 256-byte page programming without disrupting operational memory regions. | Use Scenario: Holds encrypted firmware images and sensor calibration tables in battery-powered environmental monitoring nodes deployed for 10+ years. IC Role / Device Role / Timing Role: Secure, low-power persistent storage with OTP register for device identity and ultra-deep power-down for multi-year battery operation. Use Value: Delivers 200 nA shutdown current and 100,000-cycle endurance-meeting lifetime reliability requirements without periodic replacement. |
| Medical Diagnostic Device Config | Automotive Body Control Module |
Use Scenario: Stores patient-specific calibration profiles and regulatory-compliant audit logs in portable ultrasound and ECG analyzers. IC Role / Device Role / Timing Role: Data storage IC with hardware write protection (WP pin) and status register locking to prevent unauthorized configuration changes. Use Value: Ensures data integrity across temperature ranges (-40°C to +85°C) and supports traceable 20-year data retention for compliance reporting. | Use Scenario: Stores lighting control algorithms and seat-position presets in 12 V automotive body control units with wide-input DC-DC regulation. IC Role / Device Role / Timing Role: SPI Flash memory interfaced directly to 3.3 V microcontroller domain, leveraging 1.65–3.6 V supply tolerance for robustness against rail droop. Use Value: Eliminates need for external level shifters while supporting 104 MHz reads for responsive UI updates and real-time actuator control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q80DVSSIG | 8-Mbit density, 133 MHz max clock, Quad SPI support, no dual-output read; 100,000-cycle endurance same. | Higher capacity and faster clock but lacks dual-output mode; requires different command set and driver adaptation. | Select when higher density and quad interface are needed; not drop-in due to command and timing differences. |
| Micron MT25QL01GBBB8E12-0SIT | 1-Gbit density, 133 MHz, Octal DTR support, deep power-down current 2 µA (vs. 200 nA), extended temp up to +125°C. | Targeted at automotive under-hood use; higher power consumption in sleep mode reduces battery life in portable designs. | Prefer for high-temp automotive applications; avoid where ultra-low standby current is mandatory. |
Compared with W25Q80DVSSIG and MT25QL01GBBB8E12-0SIT, the AT25DF011-MAHN-Y offers superior ultra-deep power-down efficiency (200 nA), native dual-output read for bandwidth-constrained MCUs, and optimized 256-byte page erase-making it ideal for compact, battery-sensitive embedded systems requiring precise firmware update control.
Availability
AT25DF011-MAHN-Y is available at Aetrix Electronics and suitable for industrial HMI boot storage, IoT edge node firmware, medical diagnostic device config, and automotive body control module applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for AT25DF011-MAHN-Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, infrastructure, and IoT markets.
The AT25DF011-MAHN-Y belongs to Renesas' serial Flash memory product line, engineered specifically for cost-sensitive, low-power embedded systems needing reliable code and data storage with flexible erase granularity and integrated security features.
FAQ
What is the operating voltage range of the AT25DF011-MAHN-Y?
The AT25DF011-MAHN-Y operates from 1.65 V to 3.6 V across its full industrial temperature range (-40°C to +85°C). At the extended temperature range (-40°C to +125°C), the minimum supply voltage increases to 1.7 V. This single-supply design eliminates the need for auxiliary voltage rails and simplifies power architecture in mixed-voltage systems.
Does the AT25DF011-MAHN-Y support dual-output read, and how does it improve performance?
Yes, the AT25DF011-MAHN-Y supports dual-output read using the 3Bh opcode, which repurposes the SI pin as I/O0 alongside SO (I/O1) to output two bits per SCK cycle. This doubles effective read throughput compared to standard single-output mode (03h/0Bh), reducing firmware load time and improving boot speed in microcontroller-based systems without requiring hardware redesign.
How is hardware write protection implemented on the AT25DF011-MAHN-Y?
Hardware write protection on the AT25DF011-MAHN-Y is controlled by the active-low WP pin. When asserted low, it enables hardware locking of protected memory sectors as defined in the status register. The WP pin is internally pulled high, allowing it to be left floating if unused-but Renesas recommends tying it to VCC externally for noise immunity and predictable default behavior during power-up.
What is the purpose and structure of the OTP security register in the AT25DF011-MAHN-Y?
The AT25DF011-MAHN-Y includes a 128-byte One-Time Programmable (OTP) security register: 64 bytes are factory-programmed with a unique device identifier, and 64 bytes are user-programmable for ESN, cryptographic keys, or calibration data. Once written, OTP bytes cannot be erased or rewritten-providing tamper-resistant storage for secure device authentication and traceability.
What erase options does the AT25DF011-MAHN-Y provide, and why is page-level erase important?
The AT25DF011-MAHN-Y supports 256-byte page erase, 4-kByte block erase, 32-kByte block erase, and full chip erase. Page-level erase is critical for in-field firmware updates because it allows modification of small code segments or configuration data without erasing adjacent, functionally unrelated memory-preserving system stability and minimizing update window duration.
AT25DF011-MAHN-Y Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-UFDFN Exposed Pad
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 104 MHz
- Write Cycle Time - Word, Page:
- 8µs, 3.5ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-UDFN (2x3)
AT25DF011-MAHN-Y FAQ
1.How can I place an order for AT25DF011-MAHN-Y through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25DF011-MAHN-Y on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25DF011-MAHN-Y reliable?
The price and inventory of AT25DF011-MAHN-Y are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25DF011-MAHN-Y is usually 5 days.
3.What payment methods are accepted for AT25DF011-MAHN-Y?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25DF011-MAHN-Y transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25DF011-MAHN-Y?
AT25DF011-MAHN-Y orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25DF011-MAHN-Y order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25DF011-MAHN-Y?
For technical support, including AT25DF011-MAHN-Y datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25DF011-MAHN-Y requirements.
6.How does Aetrix verify that AT25DF011-MAHN-Y is sourced from the original manufacturer or authorized distributors?
All AT25DF011-MAHN-Y products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25DF011-MAHN-Y meets industry standards.
7.What is the process for return or replacement of AT25DF011-MAHN-Y?
All AT25DF011-MAHN-Y units undergo pre-shipment inspection (PSI). If there is an issue with AT25DF011-MAHN-Y, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25DF011-MAHN-Y part is unused and in its original packaging.
Return procedure for AT25DF011-MAHN-Y:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AT25DF011-MAHN-Y Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
