Renesas AT25DF011-SSHN-B
- Part No.:
- AT25DF011-SSHN-B
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AT25DF011-SSHN-B.pdf
- Description:
- IC FLASH 1MBIT SPI 104MHZ 8SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:1,569
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AT25DF011-SSHN-B from Renesas Electronics is a 1-Mbit SPI serial flash memory IC designed for code shadowing and embedded data storage in resource-constrained systems. It operates from 1.65 V to 3.6 V, supports SPI Modes 0/3, delivers 104 MHz max clock frequency, achieves 6 ns clock-to-output delay, and features dual-output read for enhanced throughput - deployed in industrial controllers and IoT edge nodes requiring reliable nonvolatile storage.
For engineers reviewing the AT25DF011-SSHN-B datasheet, AT25DF011-SSHN-B pinout, AT25DF011-SSHN-B application, or AT25DF011-SSHN-B equivalent, key selection criteria include its 256-byte page erase granularity, 128-byte OTP security register with factory-unique ID, ultra-deep power-down current (200 nA), flexible block protection via WP pin, and compatibility with 8-lead SOIC (150-mil) packaging.
Technical Context
The AT25DF011-SSHN-B implements a SPI-compatible command set with dedicated opcodes for byte/page program (02h), 4-kB/32-kB block erase (20h/52h), chip erase (60h/C7h), and dual-output read (3Bh). Its memory architecture supports three-tiered erase (page/4-kB/32-kB) enabling efficient co-location of firmware code and runtime data without cross-contamination.
Hardware-based protection uses the active-low WP pin to lock sectors, while software control leverages status register bits (SRWD, BPL) for fine-grained write protection. The integrated 128-byte OTP register includes 64 bytes factory-programmed with a unique identifier and 64 bytes user-programmable for secure device serialization or key storage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Mbit (131,072 × 8-bit) - sufficient for boot code, firmware images, and configuration data in compact embedded systems. |
| Supply Voltage Range | 1.65 V to 3.6 V - enables direct interface with 1.8 V and 3.3 V microcontrollers without level shifting. |
| Max Clock Frequency | 104 MHz - supports high-speed read operations for latency-sensitive applications like real-time firmware loading. |
| Read Latency | 6 ns clock-to-output (tV) - minimizes wait states during instruction fetch or data streaming. |
| Erase Granularity | 256-byte page / 4-kB block / 32-kB block - allows precise updates of small data segments without disturbing adjacent firmware sections. |
| Power-Down Current | 200 nA ultra-deep power-down (typical) - extends battery life in always-on sensor nodes and wearable devices. |
| Endurance & Retention | 100,000 program/erase cycles at -40 °C to +85 °C; 20-year data retention - meets industrial lifecycle requirements. |
Pinout & Package
AT25DF011-SSHN-B is packaged in an industry-standard 8-lead SOIC (150-mil) body with gull-wing leads, compatible with automated PCB assembly and reflow soldering per JEDEC MS-012.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable signal; must transition high→low to initiate any command sequence and low→high to terminate operation. |
| SCK | Serial Clock | Master-generated clock; rising edge latches input (SI), falling edge clocks output (SO); supports up to 104 MHz. |
| SI (I/O0) | Serial Input / Dual-Output Data Line 0 | Input for commands, addresses, and data; becomes output during dual-output read (3Bh) to deliver LSB-aligned data stream. |
| SO (I/O1) | Serial Output / Dual-Output Data Line 1 | Primary output for standard reads; remains output during dual-output read to deliver MSB-aligned data stream alongside SI. |
| WP | Write Protect | Hardware lock control; low state enables sector protection override; internally pulled high for default disable. |
| HOLD | Communication Pause | Active-low pause signal; suspends ongoing SPI transfer without deselecting device or resetting internal state. |
| VCC | Power Supply | Single supply input (1.65–3.6 V); powers all logic and memory array; no auxiliary voltage required for programming. |
| GND | Ground Reference | System ground return path; must be low-impedance and decoupled near VCC pin for noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-Output Read Mode | Enables 2-bit-per-clock data transfer using SI and SO pins simultaneously, doubling effective read bandwidth versus standard SPI read (03h). |
| Flexible Erase Architecture | Supports 256-byte page, 4-kB block, 32-kB block, and full-chip erase - optimizes memory utilization for mixed code+data storage. |
| OTP Security Register | 128-byte one-time programmable area with 64-byte factory-unique ID and 64-byte user space - enables secure device binding and ESN storage. |
| Hardware Write Protection | WP pin provides physical lock control over protected sectors, independent of software status register settings for fail-safe security. |
| Ultra-Low Power States | 200 nA ultra-deep power-down and 5 µA deep power-down modes reduce quiescent current by >99% vs active read (4.5 mA). |
Applications
| Industrial PLC Firmware Storage | IoT Edge Sensor Node Logging |
|---|---|
Use Scenario: Storing firmware update images and runtime configuration parameters in programmable logic controllers operating in harsh environments. IC Role / Device Role / Timing Role: Nonvolatile code storage with fast page erase (1.5 ms) and hardware write protection to prevent accidental corruption during field upgrades. Use Value: Eliminates need for external EEPROM or backup SRAM; 100,000-cycle endurance ensures 10+ years of daily firmware patching. | Use Scenario: Capturing timestamped sensor readings (temperature, humidity, motion) in battery-powered environmental monitors. IC Role / Device Role / Timing Role: Low-power data logger using 256-byte page writes and 4-kB block erases to minimize energy per write cycle. Use Value: 200 nA ultra-deep power-down extends 2-AA battery life beyond 5 years while retaining logged data. |
| Medical Diagnostic Handheld Boot Memory | Automotive Body Control Module Configuration |
Use Scenario: Hosting boot loader and calibration tables in portable ultrasound or glucose meter devices requiring regulatory-compliant data integrity. IC Role / Device Role / Timing Role: Secure boot memory with factory-programmed unique ID (64 bytes) and user-programmable OTP for cryptographic key injection. Use Value: Meets IEC 62304 traceability requirements via immutable device serialization and tamper-resistant storage. | Use Scenario: Storing vehicle-specific configuration profiles (lighting sequences, window auto-up/down thresholds) in BCMs across production variants. IC Role / Device Role / Timing Role: Field-updatable parameter storage leveraging uniform 4-kB block erase to isolate profile sets without affecting core firmware. Use Value: Reduces BOM count by consolidating variant-specific data into single hardware platform; 20-year retention guarantees lifetime calibration validity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q10EW | 1-Mbit density, 1.65–3.6 V, 104 MHz, but lacks dual-output read mode and OTP security register. | Lower security assurance for device identity; requires external logic for equivalent protection schemes. | Select when dual-read throughput and factory-unique ID are not required; lower cost alternative with identical footprint. |
| Micron MT25QL01GBBB8E12-0SIT | 1-Gbit density (1000× larger), quad-SPI interface, 133 MHz, but incompatible pinout and higher voltage minimum (1.7 V). | Not drop-in replaceable; requires PCB redesign and firmware driver updates for QSPI protocol stack. | Choose only for future-proofing or when >1-Mbit capacity is needed; not suitable for direct substitution. |
Compared with W25Q10EW and MT25QL01GBBB8E12-0SIT, the AT25DF011-SSHN-B uniquely balances compact 1-Mbit density, dual-output read acceleration, on-chip OTP serialization, and SOIC-8 compatibility - making it optimal for cost-sensitive, space-constrained designs where security and power efficiency are prioritized over raw capacity.
Availability
AT25DF011-SSHN-B is available at Aetrix Electronics and suitable for industrial automation, medical diagnostics, automotive body electronics, and IoT edge sensing applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for AT25DF011-SSHN-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.
The AT25DF011-SSHN-B belongs to Renesas' AT25DF family of SPI flash memories engineered specifically for embedded code execution and secure data logging in power- and space-constrained systems.
FAQ
What is the maximum operating frequency supported by the AT25DF011-SSHN-B?
The AT25DF011-SSHN-B supports a maximum clock frequency of 104 MHz for read, program, and erase operations. This applies to standard read (03h), dual-output read (3Bh), page erase (81h), 4-kB block erase (20h), 32-kB block erase (52h), and chip erase (60h/C7h) commands. AC timing specifications confirm tV (clock-to-output) of 6 ns at this rate, enabling high-throughput firmware access in real-time systems.
Does the AT25DF011-SSHN-B support dual-output read mode, and how is it enabled?
Yes, the AT25DF011-SSHN-B supports dual-output read mode using opcode 3Bh. When this command is issued, both the SI (I/O0) and SO (I/O1) pins become outputs, delivering two bits per SCK falling edge. This doubles effective data throughput versus standard SPI read (03h). No configuration register setting is required - activation is command-driven and transparent to host controller timing.
What package type is used for the AT25DF011-SSHN-B, and what are its dimensions?
The AT25DF011-SSHN-B uses an 8-lead SOIC (Small Outline Integrated Circuit) package with 150-mil body width. Per JEDEC MS-012, it measures 5.0 mm × 4.0 mm × 1.75 mm (L × W × H) with 1.27 mm lead pitch. This package is compatible with standard reflow profiles and automated optical inspection in high-volume manufacturing.
How does the hardware write protection feature work on the AT25DF011-SSHN-B?
The AT25DF011-SSHN-B implements hardware write protection via the active-low WP pin. When WP is driven low, it overrides software-based protection bits (BPL, TB, BP2–BP0) to lock selected memory sectors. The WP pin is internally pulled high, so leaving it unconnected disables hardware protection. For fail-safe operation, Renesas recommends tying WP to VCC unless explicit sector locking is required.
What is the structure and purpose of the OTP security register in the AT25DF011-SSHN-B?
The AT25DF011-SSHN-B contains a 128-byte OTP (One-Time Programmable) security register: 64 bytes are factory-programmed with a unique device identifier for serialization, and 64 bytes are user-programmable for keys, certificates, or calibration data. Once written, OTP contents cannot be erased or rewritten - providing immutable device identity and secure storage for cryptographic assets.
AT25DF011-SSHN-B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 104 MHz
- Write Cycle Time - Word, Page:
- 8µs, 3.5ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AT25DF011-SSHN-B FAQ
1.How can I place an order for AT25DF011-SSHN-B through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25DF011-SSHN-B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25DF011-SSHN-B reliable?
The price and inventory of AT25DF011-SSHN-B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25DF011-SSHN-B is usually 5 days.
3.What payment methods are accepted for AT25DF011-SSHN-B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25DF011-SSHN-B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25DF011-SSHN-B?
AT25DF011-SSHN-B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25DF011-SSHN-B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25DF011-SSHN-B?
For technical support, including AT25DF011-SSHN-B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25DF011-SSHN-B requirements.
6.How does Aetrix verify that AT25DF011-SSHN-B is sourced from the original manufacturer or authorized distributors?
All AT25DF011-SSHN-B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25DF011-SSHN-B meets industry standards.
7.What is the process for return or replacement of AT25DF011-SSHN-B?
All AT25DF011-SSHN-B units undergo pre-shipment inspection (PSI). If there is an issue with AT25DF011-SSHN-B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25DF011-SSHN-B part is unused and in its original packaging.
Return procedure for AT25DF011-SSHN-B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AT25DF011-SSHN-B Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

.jpg)