Renesas AT25DF011-SSHNGU-B

Overview

AT25DF011-SSHNGU-B from Renesas Electronics is a 1-Mbit SPI serial Flash memory IC designed for code shadowing and embedded data storage in low-voltage systems. It operates from 1.65 V to 3.6 V, supports SPI Modes 0/3 and Dual-Output Read, delivers 104 MHz max clock frequency with 6 ns clock-to-output delay, and features flexible erase granularity (256-byte page, 4-kB/32-kB blocks) for mixed code+data applications in industrial controllers and IoT edge nodes.

For engineers reviewing the AT25DF011-SSHNGU-B datasheet, AT25DF011-SSHNGU-B pinout, AT25DF011-SSHNGU-B application, or AT25DF011-SSHNGU-B equivalent, key selection criteria include dual-read throughput, ultra-low deep power-down current (200 nA), OTP security register usage, sector protection via WP pin, and compatibility with 1.65–3.6 V host interfaces requiring JEDEC-standard ID read capability.

Technical Context

The AT25DF011-SSHNGU-B implements a dedicated SPI interface with hardware-controlled write protection via the WP pin and HOLD pin for communication pause without reset. Its memory architecture supports three independent erase granularities-256-byte pages, uniform 4-kB blocks, and uniform 32-kB blocks-enabling efficient allocation of code modules and data segments without cross-contamination.

Dual-Output Read mode uses both SI (I/O0) and SO (I/O1) pins simultaneously to output two bits per SCK falling edge, doubling effective read bandwidth versus standard single-output reads. The device includes a 128-byte OTP security register (64 bytes factory-programmed unique ID + 64 bytes user-programmable) and reports program/erase status via a two-byte status register with WIP, WEL, BP, and SRWD flags.

Key Specifications

Pinout & Package

AT25DF011-SSHNGU-B is packaged in an 8-lead SOIC (150-mil) with gull-wing leads, compatible with standard reflow and wave-solder processes. Pin assignments are validated per Renesas DS-AT25DF011-032 Rev. J, Figure 1 and Table 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Compared with W25Q80DVSSIG and MT25QL064ABA8ESF-0SIT, the AT25DF011-SSHNGU-B offers unique value in ultra-low-voltage operation (1.65 V), dual-output read acceleration at 50 MHz, and 200 nA ultra-deep power-down - making it optimal for compact, battery-sensitive, and mixed-voltage embedded systems where moderate density suffices.

Availability

AT25DF011-SSHNGU-B is available at Aetrix Electronics and suitable for industrial automation, medical wearables, automotive body electronics, and smart home gateways requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for AT25DF011-SSHNGU-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.

The AT25DF011-SSHNGU-B belongs to Renesas' AT25DF family of SPI Flash memories, engineered specifically for cost-sensitive, low-power embedded systems needing flexible erase granularity and secure OTP storage without external voltage pumps.

FAQ

What is the maximum operating frequency of the AT25DF011-SSHNGU-B during Dual-Output Read operations?

The AT25DF011-SSHNGU-B supports Dual-Output Read at up to 50 MHz, as specified in Table 2 of the datasheet. This mode uses both SI and SO pins to output two bits per SCK falling edge, effectively doubling read bandwidth compared to standard 03h Read Array (limited to 33 MHz). The 104 MHz maximum applies only to non-dual commands like Page Erase and Block Erase.

Does the AT25DF011-SSHNGU-B support hardware write protection, and how is it implemented?

Yes, the AT25DF011-SSHNGU-B implements hardware write protection via the WP (Write Protect) pin. When WP is driven low, it locks protected memory sectors as defined by the status register's BP bits. The pin is internally pulled high, so it can be left floating if unused-but Renesas recommends tying it to VCC externally for noise immunity. Protection is independent of software commands and remains active during power transitions.

How does the OTP security register in the AT25DF011-SSHNGU-B function, and what is its structure?

The AT25DF011-SSHNGU-B contains a 128-byte OTP security register: 64 bytes are factory-programmed with a unique device identifier (e.g., ESN), and 64 bytes are user-programmable once. It is accessed via Program OTP Security Register (42h) and Read OTP Security Register (4Bh) commands. Once programmed, OTP bytes cannot be erased or rewritten, providing tamper-resistant storage for keys, certificates, or calibration data.

What erase options are available on the AT25DF011-SSHNGU-B, and how do they impact memory management?

The AT25DF011-SSHNGU-B offers four erase options: 256-byte Page Erase (81h), 4-kB Block Erase (20h), 32-kB Block Erase (52h), and Full Chip Erase (60h/C7h). This hierarchy enables precise memory management-small pages for data logging, 4-kB blocks for firmware modules, and 32-kB blocks for major updates-reducing wasted space and improving lifetime endurance versus fixed-sector Flash devices.

Is the AT25DF011-SSHNGU-B compatible with standard SPI controllers, and which modes does it support?

Yes, the AT25DF011-SSHNGU-B is fully compatible with standard SPI master controllers. It supports SPI Modes 0 and 3 (CPOL = 0/1, CPHA = 0), where data is latched on the rising edge of SCK and output on the falling edge. Mode selection is handled entirely by the host controller; no device configuration is required. All opcodes follow JEDEC-standard format and MSB-first transmission.