Renesas AT25DF011-SSHN-T

Overview

AT25DF011-SSHN-T from Renesas Electronics is a 1-Mbit SPI serial flash memory IC designed for code shadowing and embedded data storage in low-voltage systems. It operates from 1.65 V to 3.6 V, supports SPI Modes 0/3 and Dual-Output Read, delivers 104 MHz max clock frequency, and achieves 6 ns clock-to-output timing - enabling high-speed boot code execution in resource-constrained IoT edge nodes and industrial controllers.

For engineers reviewing the AT25DF011-SSHN-T datasheet, AT25DF011-SSHN-T pinout, AT25DF011-SSHN-T application, or AT25DF011-SSHN-T equivalent, key selection considerations include its 256-byte page erase granularity, 128-byte OTP security register with factory-programmed unique ID, ultra-deep power-down current (200 nA), and support for hardware write protection via WP pin in 8-lead SOIC package.

Technical Context

The AT25DF011-SSHN-T implements a flexible three-tier erase architecture-256-byte pages, uniform 4-kByte blocks, and 32-kByte blocks-optimized to minimize wasted space when co-locating firmware code and runtime configuration data. Its Dual-Output Read mode uses both SI and SO pins as outputs, doubling data throughput versus standard SPI Read (03h) by delivering two bits per SCK falling edge.

Command execution is fully SPI master–driven with no internal voltage pump; all program/erase operations use the same 1.65–3.6 V supply. The device integrates hardware-controlled sector locking via the WP pin, software-configurable status register bits (BPL, SRWD), and automatic erase/program failure reporting - eliminating need for external supervision logic in safety-critical firmware updates.

Key Specifications

Pinout & Package

AT25DF011-SSHN-T is packaged in an industry-standard 8-lead SOIC (150-mil) with gull-wing leads, RoHS-compliant and halide-free. Pin mapping follows JEDEC MS-012AA.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial flash memory applications.

Compared with W25Q80DVSSIG and MT25QL01GBBB8E12-0SIT, the AT25DF011-SSHN-T uniquely balances ultra-low-power operation (200 nA), hardware write protection, and factory-programmed uniqueness in a 1-Mbit footprint - making it optimal for cost-sensitive, battery-aware, and security-conscious embedded systems where density and quad/octal interfaces are unnecessary.

Availability

AT25DF011-SSHN-T is available at Aetrix Electronics and suitable for industrial PLCs, medical sensors, automotive body control modules, smart home hubs, and portable instrumentation requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for AT25DF011-SSHN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The AT25DF011-SSHN-T belongs to Renesas' serial flash memory product line, engineered specifically for reliable, low-voltage code and data storage in space-constrained, power-sensitive embedded systems.

FAQ

What is the maximum operating frequency supported by the AT25DF011-SSHN-T?

The AT25DF011-SSHN-T supports a maximum clock frequency of 104 MHz for Read, Page Erase, Block Erase, and Chip Erase operations. This applies across its full operating voltage range (1.65 V to 3.6 V) and temperature range (-40 °C to +85 °C). The device maintains this speed while delivering 6 ns clock-to-output timing, enabling high-throughput firmware loading and execute-in-place performance in real-time systems.

Does the AT25DF011-SSHN-T support Dual-Output Read, and how does it differ from standard SPI Read?

Yes, the AT25DF011-SSHN-T supports Dual-Output Read using the 3Bh opcode. Unlike standard SPI Read (03h), which uses only the SO pin for output, Dual-Output Read drives both SI (as I/O0) and SO (as I/O1) simultaneously - delivering two bits per SCK falling edge. This effectively doubles data throughput at the same clock rate, reducing read latency for boot code and configuration data without requiring hardware changes.

What is the purpose and structure of the OTP Security Register in the AT25DF011-SSHN-T?

The AT25DF011-SSHN-T includes a 128-byte One-Time Programmable (OTP) Security Register, with the first 64 bytes factory-programmed with a unique device identifier and the remaining 64 bytes user-programmable. This register supports secure device binding, electronic serial number (ESN) storage, and locked key management - critical for anti-counterfeiting and cryptographic authentication in regulated medical and industrial deployments.

How does the AT25DF011-SSHN-T handle power-down modes, and what are their current draw specifications?

The AT25DF011-SSHN-T offers two ultra-low-power states: Deep Power-Down (5 µA typical) and Ultra-Deep Power-Down (200 nA typical). Both are entered via dedicated commands (B9h and 79h respectively) and exited with standard wake-up sequences. These modes allow aggressive power gating in battery-powered applications - for example, extending shelf life of remote sensors beyond five years while retaining firmware integrity.

Is the AT25DF011-SSHN-T compatible with SPI Modes 0 and 3 only, and why are these selected?

Yes, the AT25DF011-SSHN-T is explicitly specified for SPI Modes 0 and 3 only. In both modes, data is latched on the rising edge of SCK and output on the falling edge - ensuring consistent timing behavior. The distinction lies solely in SCK polarity during idle state, allowing interoperability with the two most widely implemented SPI masters in microcontrollers and SoCs without requiring custom driver logic or mode switching overhead.