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Renesas AT25DF041B-DWF
- Part No.:
- AT25DF041B-DWF
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- Die
- Datasheet:
-
AT25DF041B-DWF.pdf
- Description:
- 4 MBIT, WIDE VCC (1.65V TO 3.6V)
- Quantity:
- Payment:
- Shipping:
Inventory:1,824
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Product details
Overview
AT25DF041B-DWF from Renesas Electronics is a 4-Mbit serial Flash memory IC supporting SPI Modes 0/3 and Dual-I/O read, operating from 1.65 V to 3.6 V across –40 °C to +85 °C and –40 °C to +125 °C. It delivers 104 MHz max clock frequency, 6 ns clock-to-output delay, and integrates hardware write protection via WP pin for secure code/data storage in embedded microcontrollers and IoT edge nodes.
For engineers reviewing the AT25DF041B-DWF datasheet, AT25DF041B-DWF pinout, AT25DF041B-DWF application, or AT25DF041B-DWF equivalent, this page provides verified electrical specs, validated pin functions, confirmed dual-I/O timing behavior, OTP security register architecture, and real-world erase/program performance metrics for industrial firmware storage design.
Technical Context
The AT25DF041B-DWF implements a flexible hierarchical erase architecture with uniform 4-kByte, 32-kByte, and 64-kByte blocks plus 256-byte pages-enabling efficient co-location of firmware code and runtime data without cross-contamination. Its SPI interface supports both standard single-I/O and high-throughput Dual-Output Read (0Bh opcode), where SI and SO function simultaneously as I/O0 and I/O1 outputs.
Internal control logic enforces hardware sector locking via the active-low WP pin and includes a 128-byte OTP register-64 bytes factory-programmed with a unique identifier and 64 bytes user-programmable-for device serialization and key storage. Power management features include Deep Power-Down (5 µA typical) and Ultra Deep Power-Down (200 nA typical) modes with dedicated entry/exit commands.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (512 KByte) organized as 64 kByte sectors × 8; enables compact firmware image storage with minimal PCB footprint. |
| Max Clock Frequency | 104 MHz; supports high-speed boot code shadowing into RAM with 6 ns tV (clock-to-output), reducing processor wait states. |
| Erase Granularity | 256-byte page, 4/32/64-kByte uniform blocks, full chip; allows precise over-the-air (OTA) update partitioning without erasing unrelated code segments. |
| Program Time (Typical) | 1.25 ms per 256-byte page; enables fast field firmware patching while maintaining deterministic latency budgets. |
| Endurance & Retention | 100,000 P/E cycles at –40 °C to +85 °C; 20-year data retention; qualified for long-life industrial control and automotive telematics applications. |
| Supply Voltage Range | 1.65 V to 3.6 V; interoperable with 1.8 V and 3.3 V host MCUs without level-shifting, simplifying power domain design. |
| Power-Down Current | 200 nA ultra-deep mode; extends battery life in always-on sensor nodes and low-power IoT endpoints. |
Pinout & Package
AT25DF041B-DWF is supplied in die-in-wafer form (DWF), intended for direct integration into system-in-package (SiP) or wafer-level chip-scale assembly. No discrete package body; bare die with bond pads matching standard 8-pin SOIC pinout mapping.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select input | Active-low enable; must transition high→low to initiate command sequence and low→high to terminate; holds device in standby when deasserted. |
| SCK | Serial clock input | Drives all timing; rising edge latches SI/I/O0 input, falling edge clocks SO/I/O1 output; supports up to 104 MHz operation. |
| SI / I/O0 | Serial input / Dual-I/O data line 0 | Input for commands/addresses/data in standard mode; becomes output (I/O0) during Dual-Output Read to deliver LSB-aligned data stream. |
| SO / I/O1 | Serial output / Dual-I/O data line 1 | Output for read data in standard mode; remains output (I/O1) during Dual-Output Read to deliver MSB-aligned data stream alongside I/O0. |
| WP | Write protect input | Active-low hardware lock; when pulled low, prevents status register writes and sector protection changes-critical for secure bootloader integrity. |
| HOLD | Hold input | Active-low pause signal; suspends ongoing SPI transfer without resetting internal state; requires CS asserted and SCK low to activate. |
| VCC | Power supply | 1.65–3.6 V single supply; powers core logic, memory array, and I/O buffers; no auxiliary voltage required for programming/erasing. |
| GND | Ground reference | System ground return path; must be low-impedance connection to minimize noise coupling into sensitive flash read operations. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-I/O Read Mode | Enables 2-bit-per-clock throughput using SI and SO as concurrent outputs (I/O0/I/O1), doubling effective read bandwidth vs. standard SPI. |
| Flexible Erase Architecture | Supports 256-byte page erase for fine-grained data logging and 64-kByte block erase for full firmware updates-reducing wasted space in mixed-code/data layouts. |
| 128-Byte OTP Security Register | Contains 64-byte factory-unique ID + 64-byte user-programmable area; used for device authentication, ESN binding, and encrypted key storage in secure boot flows. |
| Hardware Write Protection | WP pin directly gates sector protection register writes and status register modifications-providing tamper-resistant lockdown independent of software state. |
| Ultra-Low Power Modes | 200 nA ultra-deep power-down current enables multi-year battery operation in maintenance-free wireless sensors and asset trackers. |
Applications
| Firmware Storage in MCU-Based Edge Nodes | Secure Bootloader Code Storage |
|---|---|
Use Scenario: Storing application firmware images and configuration parameters in battery-powered industrial gateways with OTA update capability. IC Role / Device Role / Timing Role: Non-volatile code storage device interfaced via SPI to ARM Cortex-M host; provides 104 MHz read access for fast boot-time shadowing. Use Value: Page-erase granularity enables atomic firmware patching without corrupting adjacent code sections; 1.65 V min supply ensures compatibility with aging Li-ion cells. |
Use Scenario: Holding immutable bootloader code and cryptographic keys in automotive ECUs requiring ASIL-B functional safety compliance. IC Role / Device Role / Timing Role: Trusted execution environment (TEE) companion memory; OTP register stores root-of-trust keys; WP pin enforces hardware write lock. Use Value: 100,000 P/E cycles and 20-year retention guarantee bootloader integrity over vehicle lifetime; hardware protection prevents malicious overwrite attempts. |
| Data Logging in Wireless Sensor Networks | Configuration Storage in Medical Wearables |
Use Scenario: Capturing time-stamped sensor readings (temperature, humidity, motion) in mesh-networked environmental monitors with intermittent power. IC Role / Device Role / Timing Role: Persistent data buffer with wear-leveling support; uses 256-byte page erase to extend endurance across thousands of logging cycles. Use Value: 200 nA ultra-deep power-down current minimizes quiescent drain during sleep intervals; dual-I/O read accelerates log retrieval during gateway polling. |
Use Scenario: Storing calibrated sensor offsets, user preferences, and regulatory compliance flags in FDA-cleared wearable health monitors. IC Role / Device Role / Timing Role: Configuration non-volatile memory (NVM) paired with low-power BLE SoC; operates at 1.8 V to match SoC I/O voltage. Use Value: 1.65–3.6 V supply range eliminates need for dedicated LDO; 35 ms 4-kByte block erase enables rapid reconfiguration during device setup or calibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q40EW | 4 Mbit density, 133 MHz max clock, Quad-I/O support (vs. AT25DF041B-DWF's Dual-I/O only); no OTP register; 100,000-cycle endurance at –40 °C to +85 °C. | Better raw throughput for high-bandwidth code fetch; lacks hardware-locked OTP for secure key storage. | Select W25Q40EW when Quad-I/O bandwidth is critical and security requirements are met via external crypto controller. |
| Micron MT25QL04A | 4 Mbit density, 133 MHz max clock, Quad-I/O + DTR mode; includes 64-byte UID but no user-programmable OTP; 100,000-cycle endurance at –40 °C to +105 °C. | Higher temperature rating and faster clock; missing dedicated WP-gated sector protection and 128-byte OTP flexibility. | Choose MT25QL04A for extended-temperature industrial control where OTP-based serialization is handled externally. |
Compared with W25Q40EW and MT25QL04A, the AT25DF041B-DWF uniquely combines Dual-I/O throughput, hardware WP-protected sector locking, and a 128-byte OTP register with factory-unique ID-making it optimal for cost-sensitive, security-aware embedded systems where SiP integration and low-quiescent power are mandatory.
Availability
AT25DF041B-DWF is available at Aetrix Electronics and suitable for industrial IoT gateways, automotive telematics modules, medical wearables, and battery-powered sensor nodes requiring stable component supply and long-term lifecycle support.
Supply support for AT25DF041B-DWF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The AT25DF041B-DWF belongs to Renesas' serial Flash memory product line, engineered for reliable, low-voltage, high-endurance code and data storage in space-constrained embedded systems with stringent power and security requirements.
FAQ
What is the operating voltage range of the AT25DF041B-DWF?
The AT25DF041B-DWF operates from 1.65 V to 3.6 V across the full industrial temperature range (–40 °C to +85 °C) and from 1.7 V to 3.6 V at extended temperature (–40 °C to +125 °C). This wide supply range allows direct interfacing with 1.8 V and 3.3 V host microcontrollers without level shifters, reducing BOM count and layout complexity in AT25DF041B-DWF-based designs.
Does the AT25DF041B-DWF support Quad-I/O or only Dual-I/O?
The AT25DF041B-DWF supports SPI Modes 0 and 3 with Dual-I/O Read functionality-using SI and SO pins concurrently as I/O0 and I/O1 outputs-but does not support Quad-I/O. Its Dual-I/O mode achieves 2-bit-per-clock throughput, delivering higher bandwidth than standard single-I/O SPI while maintaining simpler routing than Quad-I/O interfaces in AT25DF041B-DWF implementations.
How is hardware write protection implemented on the AT25DF041B-DWF?
Hardware write protection on the AT25DF041B-DWF is controlled by the active-low WP pin, which directly gates writes to the sector protection registers and status register. When WP is pulled low, software commands like Write Enable, Protect Sector, and Write Status Register are ignored-even if the internal write enable latch is set-ensuring robust, tamper-resistant lockdown of protected memory regions in AT25DF041B-DWF deployments.
What is the purpose and structure of the OTP security register in the AT25DF041B-DWF?
The AT25DF041B-DWF includes a 128-byte OTP (One-Time Programmable) security register: 64 bytes are factory-programmed with a unique device identifier, and 64 bytes are user-programmable for keys, certificates, or calibration data. Once programmed, OTP bytes cannot be erased or rewritten-providing immutable storage for root-of-trust elements in secure boot and device authentication workflows using AT25DF041B-DWF.
What erase block sizes does the AT25DF041B-DWF support, and why does that matter?
The AT25DF041B-DWF supports 256-byte page erase, 4-kByte block erase, 32-kByte block erase, 64-kByte block erase, and full chip erase. This hierarchical granularity enables precise firmware updates (e.g., patching one function without touching bootloader), efficient data logging (page-level writes), and bulk reconfiguration (64-kByte blocks)-maximizing memory utilization and minimizing wear in AT25DF041B-DWF applications.
AT25DF041B-DWF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR (SLC)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- SPI - Dual I/O
- Clock Frequency:
- 104 MHz
- Write Cycle Time - Word, Page:
- 8µs, 2.5ms
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Wafer
AT25DF041B-DWF FAQ
1.How can I place an order for AT25DF041B-DWF through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25DF041B-DWF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25DF041B-DWF reliable?
The price and inventory of AT25DF041B-DWF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25DF041B-DWF is usually 5 days.
3.What payment methods are accepted for AT25DF041B-DWF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25DF041B-DWF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25DF041B-DWF?
AT25DF041B-DWF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25DF041B-DWF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25DF041B-DWF?
For technical support, including AT25DF041B-DWF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25DF041B-DWF requirements.
6.How does Aetrix verify that AT25DF041B-DWF is sourced from the original manufacturer or authorized distributors?
All AT25DF041B-DWF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25DF041B-DWF meets industry standards.
7.What is the process for return or replacement of AT25DF041B-DWF?
All AT25DF041B-DWF units undergo pre-shipment inspection (PSI). If there is an issue with AT25DF041B-DWF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25DF041B-DWF part is unused and in its original packaging.
Return procedure for AT25DF041B-DWF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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