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Renesas AT25DF081A-MH-Y

Part No.:
AT25DF081A-MH-Y
Manufacturer:
Renesas
Category:
Memory
Package:
8-UDFN Exposed Pad
Datasheet:
AetrixAT25DF081A-MH-Y.pdf
Description:
IC FLASH 8MBIT SPI 100MHZ 8UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:835

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Product details

Overview

AT25DF081A-MH-Y from Adesto Technologies is an 8-Mbit SPI serial Flash memory IC designed for code shadowing and data storage in embedded systems. It operates from a single 2.7V–3.6V supply, supports SPI Modes 0/3 and RapidS™ up to 100MHz, delivers ≤5ns clock-to-output delay, and features uniform 4-Kbyte/32-Kbyte/64-Kbyte block erase plus full-chip erase.

For engineers reviewing the AT25DF081A-MH-Y datasheet, AT25DF081A-MH-Y pinout, AT25DF081A-MH-Y application, or AT25DF081A-MH-Y equivalent, this page provides verified technical context, pin-level circuit roles, real-world use scenarios, and validated alternative parts for industrial code+data storage designs requiring sector protection, OTP security, and dual-I/O throughput.

Technical Context

The AT25DF081A-MH-Y implements a flexible erase architecture with four physical granularity levels (4/32/64-Kbyte blocks + full chip), enabling efficient co-location of firmware modules and runtime data without wasted space. Its 16 × 64-Kbyte sectors support individual hardware-locked protection via the WP pin and permanent lockdown via Sector Lockdown (33h) command.

It integrates dual-input programming (A2h opcode, SOI/SI) and dual-output reading (3Bh opcode, SO/SIO), doubling effective I/O bandwidth versus standard SPI. The device uses an internal address counter for sequential reads, supports MSB-first addressing (A23–A0), and validates program/erase success via Status Register EPE bit.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density8 Mbit (1,048,576 bytes), sufficient for boot code + configuration + firmware patches in compact MCU systems
Supply Voltage2.7V–3.6V - compatible with 3.3V logic domains without level shifting or auxiliary supplies
Max Read Frequency100MHz (RapidS™ mode) - enables sub-10ns tV for high-speed instruction fetch in real-time applications
Erase GranularityUniform 4-Kbyte blocks - allows fine-grained updates of small firmware modules without disturbing adjacent code/data
Endurance & Retention100,000 program/erase cycles / 20-year data retention - meets industrial lifecycle requirements for field-upgradable devices
Power Consumption5µA deep power-down current - enables ultra-low-power sleep modes in battery-backed or energy-harvesting systems
Security Features128-byte OTP register + sector lockdown - supports device serialization, key storage, and immutable secure boot partitions

Pinout & Package

AT25DF081A-MH-Y is available in two RoHS-compliant packages: 8-lead SOIC (208-mil wide) and 8-pad Ultra Thin DFN (5 × 6 × 0.6 mm). Both share identical pinout and electrical behavior.

Pin/Terminal Circuit Role Design Meaning
CSChip Select inputActive-low enable; rising edge ends operations; must be held low during all SPI transactions including self-timed program/erase
SCKSerial clock inputControls data timing; data latched on rising edge (SI/SIO), output on falling edge (SO/SOI); supports up to 100MHz
SI (SIO)Serial input / dual-output dataInput for commands/addresses/data; becomes SIO output during Dual-Output Read (3Bh) for 2-bit-per-cycle reads
SO (SOI)Serial output / dual-input dataOutput for read data; becomes SOI input during Dual-Input Program (A2h) for 2-bit-per-cycle writes
WPHardware write protect inputLow-active pin that locks protected sectors; internally pulled high; external tie-to-VCC recommended if unused
HOLDCommunication pause inputPauses ongoing SPI transfers without deselecting device; requires CS asserted and SCK low to activate
VCCPower supply2.7–3.6V main supply; powers all logic and memory array; no separate VPP required for programming/erasing
GNDGround referenceSystem ground return path; must be low-impedance connection to minimize noise in high-frequency SPI operation

Key Features

Feature Design Value
Dual-Output Read (3Bh)Delivers 2 bits per SCK cycle - doubles effective read bandwidth vs standard SPI, reducing firmware load time by ~50% at same clock rate
Flexible Erase ArchitectureFour simultaneous erase granularities (4/32/64-Kbyte + full chip) - eliminates need for external EEPROM in mixed code+data storage applications
Individual Sector Protection16 × 64-Kbyte sectors with global protect/unprotect - enables selective firmware patching while keeping bootloader and security keys permanently isolated
Sector LockdownPermanent read-only lock for any combination of 64-Kbyte sectors - prevents malicious overwrite of secure boot code or cryptographic keys after provisioning
128-Byte OTP Security RegisterOne-time programmable space for unique device ID, ESN, or encrypted keys - supports secure manufacturing and anti-cloning workflows

Applications

Industrial PLC Firmware Storage Medical Device Configuration Memory

Use Scenario: Storing firmware images and runtime parameter sets in programmable logic controllers with field-upgrade capability.

IC Role / Device Role / Timing Role: Non-volatile code storage and configuration database; executes rapid sequential reads during boot and supports atomic 4-Kbyte sector updates during OTA patches.

Use Value: Uniform 4-Kbyte erase enables safe in-field firmware revision without erasing entire application, minimizing downtime and preserving calibration data.

Use Scenario: Holding device-specific calibration coefficients, user preferences, and regulatory compliance logs in portable diagnostic equipment.

IC Role / Device Role / Timing Role: Secure, long-retention data logger and configuration vault; leverages OTP register for device serialization and sector lockdown for FDA audit-trail integrity.

Use Value: 20-year data retention and 100K endurance ensure reliable logging across product lifetime; hardware WP pin prevents accidental overwrite during service mode.

Automotive Infotainment Bootloader Smart Energy Meter Firmware Vault

Use Scenario: Hosting primary bootloader and fail-safe recovery image in automotive head units requiring ASIL-B aware non-volatile storage.

IC Role / Device Role / Timing Role: Dual-Output Read (3Bh) accelerates bootloader execution; sector lockdown isolates recovery image from main firmware partition.

Use Value: ≤5ns tV and 100MHz RapidS™ enable deterministic boot timing; permanent lockdown prevents corruption of certified recovery code during software updates.

Use Scenario: Storing tariff tables, firmware signatures, and tamper-evident event logs in utility-grade smart meters operating across -40°C to +85°C.

IC Role / Device Role / Timing Role: Industrial-temp-rated Flash memory with Global Protect feature; used for secure firmware validation and encrypted metering data archiving.

Use Value: Full industrial temperature range compliance ensures reliability in outdoor enclosures; 64-Kbyte sector protection isolates critical tariff data from field-updatable UI code.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
Winbond W25Q80DVSSIG8-Mbit SPI Flash; supports Quad I/O (QPI) but lacks Dual-Output Read and sector lockdown; 3.3V only; 30μA deep power-downNo hardware-enforced permanent lockdown; relies on software-based protection; lower security assurance for secure boot partitionsChoose for cost-sensitive designs where QPI interface and broader distributor availability outweigh need for permanent sector lockdown.
Micron MT25QL80ABB8E12-0SIT8-Mbit Serial NOR Flash; supports Xccela™ interface (80MHz DDR); includes SFDP and 4-byte addressing; 25μA deep power-downLacks RapidS™ acceleration and dedicated OTP register; requires external crypto for device serializationPrefer when migrating to higher-density families or needing SFDP-driven auto-configuration; verify compatibility with existing RapidS™-optimized drivers.

Compared with W25Q80DVSSIG and MT25QL80ABB8E12-0SIT, the AT25DF081A-MH-Y uniquely delivers sector lockdown and 128-byte OTP in a mature, pin-compatible 8-pin package-critical for legacy industrial designs requiring immutable secure boot and field-proven reliability without architectural changes.

Availability

AT25DF081A-MH-Y is available at Aetrix Electronics and suitable for industrial PLC firmware storage, medical device configuration memory, automotive infotainment bootloaders, smart energy meter firmware vaults, and secure IoT edge node code+data storage requiring stable component supply and long-term lifecycle support.

Supply support for AT25DF081A-MH-Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Adesto Technologies (acquired by Dialog Semiconductor, now part of Renesas Electronics) specialized in low-power, high-reliability non-volatile memory and analog ICs for industrial and IoT applications.

The AT25DF081A-MH-Y belongs to Adesto's DataFlash® family, engineered specifically for embedded systems requiring simultaneous code execution and data logging with hardware-enforced security and fine-grained erase efficiency.

FAQ

What is the maximum clock frequency supported by AT25DF081A-MH-Y in RapidS™ mode?

The AT25DF081A-MH-Y supports up to 100MHz in RapidS™ mode using the 1Bh Read Array opcode. This enables the fastest possible sequential read performance with ≤5ns clock-to-output delay (tV), critical for real-time boot and firmware execution. Standard SPI Mode 0/3 operation supports up to 85MHz using the 0Bh opcode, and legacy 50MHz operation using the 03h opcode.

Does AT25DF081A-MH-Y support true dual-line read and write operations?

Yes, AT25DF081A-MH-Y supports Dual-Output Read (3Bh opcode) and Dual-Input Program (A2h opcode). During Dual-Output Read, both SO and SIO pins output data simultaneously-one bit per pin per SCK cycle-effectively doubling read bandwidth. During Dual-Input Program, SO (as SOI) and SI accept two bits per SCK cycle, accelerating write throughput without changing clock frequency.

How does sector lockdown work on AT25DF081A-MH-Y, and can it be reversed?

Sector lockdown on AT25DF081A-MH-Y is performed using the 33h command to permanently mark any combination of its 16 × 64-Kbyte sectors as read-only. Once locked, those sectors cannot be erased or programmed-even with Write Enable asserted-and the lockdown state is irreversible. This provides hardware-enforced immutability for bootloader, keys, or certification data, distinct from software-based or WP-pin-controlled protection.

What package options are available for AT25DF081A-MH-Y, and are they pin-compatible?

AT25DF081A-MH-Y is offered in two RoHS-compliant packages: 8-lead SOIC (208-mil wide) and 8-pad Ultra Thin DFN (5 × 6 × 0.6 mm). Both share identical pinout, signal definitions, and electrical characteristics. The "MH-Y" suffix denotes the DFN package; the SOIC variant carries a different suffix (e.g., "MH-T"). No PCB redesign is needed when migrating between them due to mechanical and functional equivalence.

Can AT25DF081A-MH-Y be used in systems requiring extended temperature operation?

Yes, AT25DF081A-MH-Y is fully specified for the industrial temperature range of –40°C to +85°C. All parameters-including 100MHz RapidS™ operation, 5ns tV, 100,000 endurance cycles, and 20-year data retention-are guaranteed across this range. Its design includes thermal compensation for stable timing and reliable erase/program margins under thermal stress, making it suitable for outdoor, factory-floor, and automotive cabin applications.

AT25DF081A-MH-Y Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-UDFN Exposed Pad
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
8Mbit
Memory Organization:
256 Bytes x 4096 pages
Memory Interface:
SPI
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
7µs, 3ms
Access Time:
-
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-UDFN (5x6)

AT25DF081A-MH-Y FAQ

1.How can I place an order for AT25DF081A-MH-Y through Aetrix?

Please submit a Request for Quotation (RFQ) for AT25DF081A-MH-Y on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AT25DF081A-MH-Y reliable?

The price and inventory of AT25DF081A-MH-Y are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25DF081A-MH-Y is usually 5 days.

3.What payment methods are accepted for AT25DF081A-MH-Y?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25DF081A-MH-Y transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AT25DF081A-MH-Y?

AT25DF081A-MH-Y orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AT25DF081A-MH-Y order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AT25DF081A-MH-Y?

For technical support, including AT25DF081A-MH-Y datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25DF081A-MH-Y requirements.

6.How does Aetrix verify that AT25DF081A-MH-Y is sourced from the original manufacturer or authorized distributors?

All AT25DF081A-MH-Y products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25DF081A-MH-Y meets industry standards.

7.What is the process for return or replacement of AT25DF081A-MH-Y?

All AT25DF081A-MH-Y units undergo pre-shipment inspection (PSI). If there is an issue with AT25DF081A-MH-Y, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AT25DF081A-MH-Y part is unused and in its original packaging.

Return procedure for AT25DF081A-MH-Y:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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