Renesas AT25DF256-MAHN-T

Overview

AT25DF256-MAHN-T from Renesas Electronics is a 256-Kbit serial Flash memory IC with SPI interface, supporting dual-output read mode, 104 MHz max clock frequency, 6 ns clock-to-output timing, and flexible erase architecture (256-byte page, 4-kByte/32-kByte blocks, full chip). It operates across 1.65 V–3.6 V and targets code shadowing and embedded data storage in space-constrained consumer electronics.

For engineers reviewing the AT25DF256-MAHN-T datasheet, AT25DF256-MAHN-T pinout, AT25DF256-MAHN-T application, or AT25DF256-MAHN-T equivalent, key selection criteria include dual-read throughput, ultra-low deep power-down current (200 nA), OTP security register (128 bytes), hardware write protection via WP pin, and JEDEC-standard ID read capability.

Technical Context

The AT25DF256-MAHN-T implements a standard SPI master-slave interface compliant with Modes 0 and 3, using rising-edge input sampling and falling-edge output clocking. Its memory array supports three-tiered erase granularity-page (256 B), uniform block (4 kB and 32 kB), and full chip-enabling efficient co-location of code modules and data segments without wasted sectors.

Dual-output read mode repurposes the SI (I/O0) and SO (I/O1) pins as concurrent data outputs, delivering two bits per SCK cycle at up to 50 MHz, doubling effective read bandwidth versus standard single-output reads. The device integrates dedicated status register logic for real-time program/erase status monitoring and automatic failure reporting.

Key Specifications

Pinout & Package

AT25DF256-MAHN-T is packaged in an 8-lead SOIC (150-mil) with industry-standard pinout and 1.27 mm pitch. All pins are electrically validated per Renesas DS-AT25DF256-035 Rev.G.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Compared with W25Q256JVSIM and MX25L25635FZNI-10G, the AT25DF256-MAHN-T delivers optimal balance of low-voltage operation (1.65 V), ultra-low power consumption, and integrated security - making it uniquely suited for compact, battery-powered, identity-critical embedded systems where 32 KB capacity suffices.

Availability

AT25DF256-MAHN-T is available at Aetrix Electronics and suitable for smart home sensors, medical wearables, industrial PLCs, and consumer audio devices requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for AT25DF256-MAHN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The AT25DF256 product line delivers SPI Flash memory optimized for low-power, space-constrained embedded systems requiring reliable code storage, fast dual-read access, and hardware-enforced security features.

FAQ

What is the maximum operating frequency of the AT25DF256-MAHN-T during standard read operations?

The AT25DF256-MAHN-T supports up to 104 MHz for most commands including standard read (0Bh opcode), page program, and block erase. For legacy 03h read operations, the maximum clock frequency is limited to 33 MHz. This dual-frequency capability ensures backward compatibility while enabling high-speed performance in modern designs. The 6 ns clock-to-output timing further reduces latency in time-sensitive applications.

Does the AT25DF256-MAHN-T support true dual-output read, and how does it differ from standard SPI read?

Yes, the AT25DF256-MAHN-T supports true dual-output read using the 3Bh opcode, where both SI (I/O0) and SO (I/O1) pins output data concurrently on each SCK falling edge - delivering two bits per cycle. This differs from standard SPI read (0Bh/03h), which uses SO only. Dual-output mode achieves up to 50 MHz operation and doubles effective read bandwidth, reducing firmware load time in resource-constrained hosts.

How is hardware write protection implemented on the AT25DF256-MAHN-T?

Hardware write protection on the AT25DF256-MAHN-T is controlled by the WP pin, which is active-low and internally pulled high. When WP is driven low, it locks protected memory sectors regardless of software commands - preventing accidental or malicious writes during brown-out, reset, or firmware glitches. Protection granularity is configurable via status register bits, and WP functionality is fully documented in Section 9 of the AT25DF256-MAHN-T datasheet.

What is the structure and purpose of the OTP security register in the AT25DF256-MAHN-T?

The AT25DF256-MAHN-T includes a 128-byte OTP security register comprising 64 bytes factory-programmed with a unique device identifier and 64 bytes user-programmable for ESN, keys, or calibration data. Once programmed, OTP contents cannot be altered - providing immutable device identity and secure key storage. Programming is performed via the 9Bh command and requires prior write enable, ensuring intentional, authenticated usage.

Can the AT25DF256-MAHN-T operate reliably at 1.65 V, and what are the temperature limitations at that voltage?

Yes, the AT25DF256-MAHN-T is fully specified for operation at 1.65 V minimum supply voltage, but only within the commercial temperature range of –10 °C to +85 °C. At the extended industrial range of –40 °C to +85 °C, the minimum operating voltage increases to 1.7 V. This dual-voltage/temperature specification allows designers to select the appropriate grade based on system power architecture and environmental requirements.