Renesas AT25DF256-MAHN-Y

Overview

AT25DF256-MAHN-Y from Renesas Electronics is a 256-Kbit serial Flash memory IC with SPI interface, supporting dual-output read mode for enhanced throughput in embedded code and data storage applications. It operates from 1.65 V to 3.6 V, delivers 104 MHz max clock frequency, achieves 6 ns clock-to-output delay, and features flexible erase granularity (256-byte page, 4-kByte/32-kByte blocks, full chip).

For engineers reviewing the AT25DF256-MAHN-Y datasheet, AT25DF256-MAHN-Y pinout, AT25DF256-MAHN-Y application, or AT25DF256-MAHN-Y equivalent, key selection considerations include dual-read timing compliance, OTP security register programmability, hardware write protection via WP pin, ultra-deep power-down current (200 nA), and JEDEC-standard ID read capability.

Technical Context

The AT25DF256-MAHN-Y implements a standard SPI master-slave architecture with support for Modes 0 and 3, using rising-edge input sampling and falling-edge output clocking. Its memory array is organized into uniform 4-kByte and 32-kByte erase blocks plus 256-byte pages, enabling efficient co-location of code modules and data segments without wasted space.

Dual-output read mode repurposes the SI (I/O0) and SO (I/O1) pins as concurrent data outputs, doubling effective read bandwidth at up to 50 MHz clock rate. The device integrates hardware-controlled sector locking via the WP pin and software-configurable status register bits for fine-grained protection and configuration.

Key Specifications

Pinout & Package

AT25DF256-MAHN-Y is packaged in an 8-lead SOIC (150-mil) with standard JEDEC footprint. Pin functions are electrically validated per Renesas DS-AT25DF256-035 Rev.G.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Compared with W25Q256JWEIQ and MX25L25635F, AT25DF256-MAHN-Y offers unique dual-output read capability at 1.65 V minimum supply and industry-leading 200 nA ultra-deep power-down - critical for battery-powered edge devices with strict size and energy budgets.

Availability

AT25DF256-MAHN-Y is available at Aetrix Electronics and suitable for industrial PLC firmware storage, medical device configuration memory, and smart meter boot code storage requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for AT25DF256-MAHN-Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets, with over 40 years of Flash memory innovation.

The AT25DF256 product line targets cost-sensitive, space-constrained embedded systems requiring reliable serial Flash with ultra-low power consumption and flexible erase architecture for mixed code-and-data storage.

FAQ

What is the maximum clock frequency supported by AT25DF256-MAHN-Y during dual-output read operations?

AT25DF256-MAHN-Y supports dual-output read at up to 50 MHz clock frequency, as specified in the command table (3Bh opcode). This is lower than its 104 MHz maximum for standard read commands (0Bh/03h) due to timing constraints of concurrent SI/SO output drive. The 50 MHz limit ensures setup/hold margin for both output pins under worst-case voltage and temperature conditions defined in DS-AT25DF256-035 Rev.G.

Does AT25DF256-MAHN-Y require a separate programming voltage for write or erase operations?

No, AT25DF256-MAHN-Y does not require a separate programming voltage. All program and erase operations are performed using the same 1.65 V to 3.6 V supply applied to the VCC pin. Internal charge pumps generate the higher voltages needed for Fowler-Nordheim tunneling and hot-electron injection, eliminating external high-voltage circuitry and simplifying board design for AT25DF256-MAHN-Y integration.

How is the 128-byte OTP security register structured in AT25DF256-MAHN-Y?

The 128-byte OTP security register in AT25DF256-MAHN-Y consists of two 64-byte fields: the first 64 bytes are factory-programmed with a unique device identifier (ESN), and the remaining 64 bytes are user-programmable one-time only. Once written, OTP bytes cannot be erased or rewritten. Programming is performed using the 9Bh opcode, and reads use the 77h opcode - both requiring prior write-enable activation. This structure enables secure device authentication and immutable configuration binding in AT25DF256-MAHN-Y deployments.

What package type is used for the AT25DF256-MAHN-Y variant?

AT25DF256-MAHN-Y uses an 8-lead SOIC (150-mil) package, as indicated by the "MAHN" suffix in the part number per Renesas ordering information (DS-AT25DF256-035 Rev.G, Page 42). This JEDEC-standard package measures 5.0 mm × 4.0 mm × 1.75 mm and features gull-wing leads compatible with standard reflow soldering processes. It is distinct from the UDFN and TSSOP variants offered in the same family.

Can AT25DF256-MAHN-Y operate reliably at 1.65 V across its full temperature range?

AT25DF256-MAHN-Y is rated for 1.65 V to 3.6 V operation only within the -10 °C to +85 °C temperature range. For extended industrial operation from -40 °C to +85 °C, the minimum supply voltage increases to 1.7 V. This specification is explicitly defined in the "Temperature Range" section of the datasheet (Page 1) and verified across process corners - attempting 1.65 V operation at -40 °C may result in undefined behavior or failed program/erase cycles in AT25DF256-MAHN-Y.