Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas AT25DF256-SSHN-B

Part No.:
AT25DF256-SSHN-B
Manufacturer:
Renesas
Category:
Memory
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixAT25DF256-SSHN-B.pdf
Description:
IC FLASH 256KBIT SPI 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,063

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AT25DF256-SSHN-B from Renesas Electronics is a 256-Kbit serial SPI Flash memory IC designed for code shadowing and data storage in embedded systems. It operates from 1.65 V to 3.6 V, supports SPI Modes 0/3, delivers 104 MHz max clock frequency, achieves 6 ns clock-to-output delay, and features dual-output read for enhanced throughput in resource-constrained microcontroller applications.

For engineers reviewing the AT25DF256-SSHN-B datasheet, AT25DF256-SSHN-B pinout, AT25DF256-SSHN-B application, or AT25DF256-SSHN-B equivalent, key selection criteria include its flexible erase granularity (256-byte page / 4-kB & 32-kB blocks), OTP security register, ultra-deep power-down current (200 nA), and JEDEC-standard ID read capability.

Technical Context

The AT25DF256-SSHN-B implements a dedicated SPI interface with hardware-controlled write protection via WP pin and suspend/resume capability via HOLD pin. Its command set includes dual-output read (3Bh opcode), byte/page program (02h), and hierarchical erase (81h/20h/52h/D8h/60h/C7h), all operating at up to 104 MHz with MSB-first addressing.

Internally, it uses a segmented memory architecture with uniform 4-kB and 32-kB erase blocks plus 256-byte pages, enabling efficient co-location of firmware code and runtime data without cross-contamination. The status register (Byte 1 & 2) provides real-time WIP, WEL, BP, and SRWD flags for robust operation control.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 256 Kbit (32 KB) - sufficient for boot code, configuration tables, and firmware patches in compact MCU designs.
Supply Voltage 1.65 V – 3.6 V - enables direct interfacing with 1.8 V and 3.3 V logic domains without level shifters.
Max Clock Frequency 104 MHz - supports high-speed read access with minimal latency in time-critical boot sequences.
Read Latency (tV) 6 ns - ensures deterministic timing for real-time instruction fetch from external flash.
Erase Granularity 256-byte page / 4-kB block / 32-kB block - allows precise firmware updates without erasing unrelated data sectors.
Power-Down Current 200 nA (ultra-deep) - extends battery life in always-on IoT edge nodes during extended sleep intervals.
Endurance 100,000 program/erase cycles - supports field firmware upgrades over full product lifecycle.
Data Retention 20 years - guarantees long-term integrity of calibration data and device identity stored in OTP region.

Pinout & Package

AT25DF256-SSHN-B is packaged in an 8-lead SOIC (150-mil) with standard JEDEC footprint. Pin functions are electrically validated per Renesas DS-AT25DF256-035 Rev.G.

Pin/Terminal Circuit Role Design Meaning
CS Chip Select Active-low enable signal; must transition low-to-high to complete any command sequence including self-timed erase/program operations.
SCK Serial Clock Master-generated clock; rising edge latches input (SI), falling edge clocks output (SO/I/O0); supports up to 104 MHz.
SI (I/O0) Serial Input / Dual-Output Data 0 Input for commands/addresses/data; becomes output (I/O0) during dual-output read (3Bh) to deliver LSB-aligned data bits.
SO (I/O1) Serial Output / Dual-Output Data 1 Primary output for standard reads; remains active (I/O1) during dual-output read to deliver MSB-aligned data bits alongside SI.
WP Write Protect Hardware lock control; low state enables sector protection; internally pulled high; requires external tie to VCC if unused.
HOLD Communication Suspend Pauses ongoing SPI transfer without deselecting device; requires CS asserted and SCK low to activate; no effect on internal erase/program timing.
VCC Power Supply Single 1.65–3.6 V supply; powers all logic and memory arrays; no auxiliary voltage required for programming/erasing.
GND Ground Reference Common return path for VCC and all I/O signals; must be connected to system ground plane for noise immunity.

Key Features

Feature Design Value
Dual-Output Read Mode Enables 2-bit-per-cycle data transfer using SI and SO simultaneously, doubling effective read bandwidth versus standard SPI read (03h/0Bh).
Flexible Erase Architecture Supports 256-byte page, 4-kB block, 32-kB block, and full-chip erase - minimizes wasted space when updating partial firmware images or logging data.
128-Byte OTP Security Register Contains 64 bytes factory-programmed unique identifier + 64 bytes user-programmable space - enables secure device serialization and ESN storage without external crypto IC.
Ultra-Deep Power-Down Reduces current to 200 nA typical while preserving memory contents - critical for battery-powered sensors requiring multi-year shelf life.
JEDEC Standard ID Read 9Fh command returns manufacturer (0x1F) and device ID (0x47) in standardized format - simplifies automated BOM verification and firmware compatibility checks.
Hardware Write Protection WP pin directly controls sector locking independent of software commands - prevents accidental overwrite during brown-out or reset conditions.

Applications

Firmware Boot Storage IoT Sensor Configuration

Use Scenario: Storing bootloader and application firmware for ARM Cortex-M microcontrollers requiring code execution from external memory.

IC Role / Device Role / Timing Role: Non-volatile code storage with fast random-access read and deterministic 6 ns tV for tight timing-critical boot sequences.

Use Value: Eliminates need for larger parallel NOR flash; reduces PCB area and BOM cost while maintaining sub-100 µs instruction fetch latency.

Use Scenario: Persisting calibrated sensor offsets, network credentials, and device-specific parameters in battery-powered environmental monitors.

IC Role / Device Role / Timing Role: Low-power data logger with 100,000-cycle endurance and 200 nA ultra-deep power-down for multi-year deployment.

Use Value: Enables field firmware updates without compromising battery lifetime; OTP register secures unique device identity against cloning.

Industrial HMI Display Cache Medical Device Calibration Data

Use Scenario: Caching GUI assets (fonts, icons, bitmaps) in human-machine interface panels where display RAM is limited.

IC Role / Device Role / Timing Role: High-throughput serial flash accessed via dual-output read to stream graphics data at >50 MB/s effective bandwidth.

Use Value: Reduces display initialization time by 2× versus single-output SPI; supports smooth animation rendering without frame drops.

Use Scenario: Storing factory-calibrated transducer coefficients and regulatory compliance logs in portable diagnostic equipment.

IC Role / Device Role / Timing Role: Tamper-resistant non-volatile storage with hardware write protection (WP pin) and 20-year data retention guarantee.

Use Value: Meets IEC 62304 traceability requirements; OTP region stores immutable serial number for audit trail integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
Winbond W25Q256JVSIM 512-Mbit density, quad-SPI support, 133 MHz max clock, no dual-output mode; requires different command set (0EBh QPI read). Better suited for high-bandwidth applications needing >256 Kbit capacity; incompatible with AT25DF256-SSHN-B's dual-output timing and 256-byte page erase. Select only when higher density and quad-I/O throughput are required; redesign needed for command mapping and timing margins.
Macronix MX25L25635FZC-10G 256-Mbit density, standard SPI only, 104 MHz max clock, 256-byte page erase, but lacks OTP security register and ultra-deep power-down (1 µA vs 200 nA). Acceptable for cost-sensitive firmware storage where device serialization and ultra-low sleep current are not required. Choose when OTP and sub-µA power-down are non-essential; verify compatibility with existing hold/WP pin usage and status register layout.

Compared with W25Q256JVSIM and MX25L25635FZC-10G, the AT25DF256-SSHN-B uniquely balances low-density efficiency, dual-output throughput, ultra-low power-down, and integrated OTP security-making it optimal for compact, battery-aware, and identity-critical embedded systems.

Availability

AT25DF256-SSHN-B is available at Aetrix Electronics and suitable for firmware boot storage, IoT sensor configuration, industrial HMI display cache, and medical device calibration data applications requiring stable component supply across automotive-grade temperature ranges (-40 °C to +85 °C).

Supply support for AT25DF256-SSHN-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets, with deep expertise in flash memory architecture and low-power design.

The AT25DF256-SSHN-B belongs to Renesas' AT25DF family of SPI serial flash devices engineered specifically for code+data co-storage in space- and power-constrained microcontroller systems.

FAQ

What is the maximum operating frequency supported by the AT25DF256-SSHN-B?

The AT25DF256-SSHN-B supports a maximum clock frequency of 104 MHz for all commands except legacy 03h read, which is limited to 33 MHz. This enables high-speed dual-output read (3Bh) and fast page programming (02h) while maintaining timing compliance across its full 1.65–3.6 V supply range.

Does the AT25DF256-SSHN-B support hardware write protection?

Yes, the AT25DF256-SSHN-B implements hardware write protection via the WP pin. When driven low, it enables sector locking independent of software commands, preventing accidental writes during power transitions or firmware errors. The WP pin is internally pulled high and may be left floating if unused.

How does the dual-output read mode function on the AT25DF256-SSHN-B?

The AT25DF256-SSHN-B activates dual-output read using the 3Bh opcode, repurposing the SI pin as I/O0 alongside SO as I/O1. Both pins output complementary bits of each data byte on every falling SCK edge, effectively doubling read throughput compared to standard SPI read (03h/0Bh) without requiring additional pins or bus width changes.

What is the purpose of the OTP security register in the AT25DF256-SSHN-B?

The AT25DF256-SSHN-B includes a 128-byte OTP security register: 64 bytes are factory-programmed with a unique device identifier, and 64 bytes are user-programmable. This enables secure device serialization, electronic serial number (ESN) storage, and locked key provisioning - eliminating reliance on external secure elements for basic identity management.

What power-saving modes does the AT25DF256-SSHN-B offer?

The AT25DF256-SSHN-B offers two low-power states: Deep Power-Down (5 µA typical) activated by B9h command, and Ultra-Deep Power-Down (200 nA typical) activated by 79h command. Both preserve memory contents and resume instantly upon wake-up command (ABh or chip-select toggle), making them ideal for battery-operated endpoints with infrequent wake cycles.

AT25DF256-SSHN-B Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
SPI
Clock Frequency:
104 MHz
Write Cycle Time - Word, Page:
8µs, 2.5ms
Access Time:
-
Voltage - Supply:
1.65V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

AT25DF256-SSHN-B FAQ

1.How can I place an order for AT25DF256-SSHN-B through Aetrix?

Please submit a Request for Quotation (RFQ) for AT25DF256-SSHN-B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AT25DF256-SSHN-B reliable?

The price and inventory of AT25DF256-SSHN-B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25DF256-SSHN-B is usually 5 days.

3.What payment methods are accepted for AT25DF256-SSHN-B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25DF256-SSHN-B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AT25DF256-SSHN-B?

AT25DF256-SSHN-B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AT25DF256-SSHN-B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AT25DF256-SSHN-B?

For technical support, including AT25DF256-SSHN-B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25DF256-SSHN-B requirements.

6.How does Aetrix verify that AT25DF256-SSHN-B is sourced from the original manufacturer or authorized distributors?

All AT25DF256-SSHN-B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25DF256-SSHN-B meets industry standards.

7.What is the process for return or replacement of AT25DF256-SSHN-B?

All AT25DF256-SSHN-B units undergo pre-shipment inspection (PSI). If there is an issue with AT25DF256-SSHN-B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AT25DF256-SSHN-B part is unused and in its original packaging.

Return procedure for AT25DF256-SSHN-B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AT25DF256-SSHN-B Tags

  • AT25DF256-SSHN-B
  • AT25DF256-SSHN-B PDF
  • AT25DF256-SSHN-B Datasheet
  • AT25DF256-SSHN-B Specifications
  • AT25DF256-SSHN-B Images
  • Renesas
  • Renesas AT25DF256-SSHN-B
  • Buy AT25DF256-SSHN-B
  • AT25DF256-SSHN-B Price
  • AT25DF256-SSHN-B Distributor
  • AT25DF256-SSHN-B Supplier
  • AT25DF256-SSHN-B Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER