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Renesas AT25DF512C-MAHN-Y

Part No.:
AT25DF512C-MAHN-Y
Manufacturer:
Renesas
Category:
Memory
Package:
8-UFDFN Exposed Pad
Datasheet:
AetrixAT25DF512C-MAHN-Y.pdf
Description:
IC FLASH 512KBIT SPI 8UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,258

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Product details

Overview

AT25DF512C-MAHN-Y from Renesas Electronics is a 512-Kbit serial flash memory IC with SPI interface, dual-output read capability, 104 MHz max clock frequency, and 6 ns clock-to-output timing. It operates from 1.65 V to 3.6 V and supports flexible erase granularity (256-byte page, 4-kByte/32-kByte blocks) for embedded code shadowing and data logging in resource-constrained IoT edge nodes.

For engineers reviewing the AT25DF512C-MAHN-Y datasheet, AT25DF512C-MAHN-Y pinout, AT25DF512C-MAHN-Y application, or AT25DF512C-MAHN-Y equivalent, key selection considerations include its ultra-low 200 nA deep power-down current, hardware write protection via WP pin, OTP security register with factory-unique 64-byte ID, and JEDEC-standard manufacturer/device ID read support.

Technical Context

The AT25DF512C-MAHN-Y implements a standard SPI master-slave interface supporting Modes 0 and 3, with data latched on SCK rising edge and output on falling edge. Its dual-output read mode repurposes SI as I/O0 alongside SO (I/O1) to deliver two bits per clock cycle, doubling effective throughput versus standard read.

Internally, it features a segmented memory architecture enabling independent erasure of 256-byte pages and uniform 4-kByte or 32-kByte blocks - optimized to minimize wasted space when co-locating firmware code and runtime configuration data. Protection is enforced via both software status register bits and hardware WP pin assertion.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 512 Kbit (64 KByte), sufficient for compact bootloaders or sensor calibration tables
Supply Voltage Range 1.65 V – 3.6 V - enables direct interfacing with 1.8 V or 3.3 V microcontrollers without level shifting
Max Clock Frequency 104 MHz - supports high-speed code execution from flash with minimal wait states
Read Timing (tV) 6 ns - ensures tight setup/hold margins for high-frequency SPI masters
Erase Granularity 256-byte page / 4-kByte block / 32-kByte block - allows precise updates without disturbing adjacent firmware sections
Power-Down Current 200 nA typical ultra-deep power-down - extends battery life in always-on sensor nodes
Endurance & Retention 100,000 program/erase cycles; 20-year data retention - suitable for field-updatable industrial firmware

Pinout & Package

AT25DF512C-MAHN-Y is packaged in an 8-lead SOIC (150-mil) with standard SPI pinout and hardware control signals.

Pin/Terminal Circuit Role Design Meaning
CS Chip Select Active-low enable; must transition low-to-high to complete commands and return to standby
SCK Serial Clock Master-generated clock; data latched on rising edge, output on falling edge
SI (I/O0) Serial Input / Dual-Output Data 0 Command/address input; becomes output during dual-read to deliver bit 0 of each byte
SO (I/O1) Serial Output / Dual-Output Data 1 Standard read output; remains output during dual-read to deliver bit 1 of each byte
WP Write Protect Hardware lock for protected sectors; low-active; internally pulled high
HOLD Hold Control Pauses ongoing SPI transfer without deselecting device; low-active; internally pulled high
VCC Power Supply Single 1.65–3.6 V supply; powers all logic and memory arrays
GND Ground Reference System ground return path for all internal circuitry

Key Features

Feature Design Value
Dual-Output Read Mode Enables 2-bit-per-cycle data transfer using SI and SO simultaneously, doubling read bandwidth over standard SPI
Flexible Erase Architecture Supports 256-byte page erase for fine-grained data updates and 4/32-kByte block erase for efficient firmware patching
OTP Security Register 128-byte one-time programmable area: 64 bytes factory-programmed unique ID + 64 bytes user-programmable for ESN or keys
Ultra-Low Power Modes 200 nA ultra-deep power-down and 5 µA deep power-down reduce energy consumption in sleep-state IoT endpoints
Hardware Write Protection WP pin provides physical lock for protected memory sectors, independent of software status register settings

Applications

Firmware Boot Storage IoT Sensor Data Logging

Use Scenario: Storing bootloader and application firmware for ARM Cortex-M microcontrollers in battery-powered edge devices.

IC Role / Device Role / Timing Role: Non-volatile code storage with fast random-access read and deterministic 6 ns tV for zero-wait-state execution.

Use Value: Enables reliable cold-start operation and field firmware updates using 4-kByte block erase without disrupting adjacent code regions.

Use Scenario: Capturing timestamped environmental readings (temperature, humidity) in wireless sensor nodes with intermittent connectivity.

IC Role / Device Role / Timing Role: Low-power data buffer with 256-byte page erase for wear-leveling across multiple sensor records.

Use Value: 100,000 endurance cycles and 200 nA ultra-deep power-down extend multi-year battery life while preserving data integrity.

Industrial HMI Configuration Medical Device Calibration Storage

Use Scenario: Holding UI layout assets, language strings, and user preferences in human-machine interface panels.

IC Role / Device Role / Timing Role: SPI-connected persistent storage supporting dual-output read for rapid GUI asset loading.

Use Value: 32-kByte block erase allows full UI update without requiring external EEPROM or FRAM for parameter retention.

Use Scenario: Storing factory-calibrated sensor coefficients and regulatory compliance metadata in portable diagnostic equipment.

IC Role / Device Role / Timing Role: Secure, tamper-resistant non-volatile memory with OTP register for immutable device serialization.

Use Value: Factory-programmed 64-byte unique ID and hardware WP pin ensure traceability and prevent unauthorized calibration overwrite.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
Winbond W25Q40EW 4 Mbit density, 133 MHz max clock, no dual-output read; supports quad I/O Higher capacity and speed but lacks dual-output mode; requires different command set for quad operations Choose for systems needing >512 Kbit storage and quad interface compatibility, not dual-output throughput optimization
Macronix MX25L51245G 512 Mbit density, 133 MHz max clock, supports octal DTR; no OTP register or ultra-deep power-down Orders-of-magnitude higher capacity; targets high-bandwidth code execution, not ultra-low-power edge logging Choose for complex embedded Linux boot storage where capacity outweighs power/peripheral constraints

Compared with Winbond W25Q40EW and Macronix MX25L51245G, the AT25DF512C-MAHN-Y delivers optimal balance of low-voltage operation (1.65 V), ultra-low power-down current (200 nA), dual-output read throughput, and integrated OTP security - making it uniquely suited for compact, battery-sensitive firmware and data storage roles.

Availability

AT25DF512C-MAHN-Y is available at Aetrix Electronics and suitable for firmware boot storage, IoT sensor data logging, and industrial HMI configuration requiring stable component supply and long-term lifecycle support.

Supply support for AT25DF512C-MAHN-Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The AT25DF512C-MAHN-Y belongs to Renesas' serial flash memory product line, designed specifically for cost-sensitive, low-power embedded systems requiring robust code storage, secure device identification, and flexible in-field update capabilities.

FAQ

What voltage range does the AT25DF512C-MAHN-Y support?

The AT25DF512C-MAHN-Y operates across a single supply voltage range of 1.65 V to 3.6 V. This wide range allows direct integration with both 1.8 V and 3.3 V microcontroller I/O domains without external level shifters. Operation below 1.65 V or above 3.6 V is outside absolute maximum ratings and may cause functional failure or damage to the AT25DF512C-MAHN-Y.

Does the AT25DF512C-MAHN-Y support dual-output read mode, and how is it enabled?

Yes, the AT25DF512C-MAHN-Y supports dual-output read using opcode 0x3B. During this mode, both SI (I/O0) and SO (I/O1) pins output complementary bits of each data byte on every SCK falling edge, effectively doubling read throughput. No configuration register setting is required - activation is command-driven and transparent to the host SPI controller.

What is the purpose and structure of the OTP security register in the AT25DF512C-MAHN-Y?

The AT25DF512C-MAHN-Y includes a 128-byte OTP security register: 64 bytes are factory-programmed with a unique device identifier, and 64 bytes are user-programmable once for system-level ESN, cryptographic keys, or calibration constants. Programming is irreversible and requires the 0x9B opcode; reads use 0x77. This register enhances traceability and security in certified medical or industrial deployments of the AT25DF512C-MAHN-Y.

How does hardware write protection work on the AT25DF512C-MAHN-Y?

Hardware write protection on the AT25DF512C-MAHN-Y is controlled by the active-low WP pin. When asserted (low), it locks designated memory sectors regardless of software status register settings - providing fail-safe protection against accidental or malicious writes. The WP pin is internally pulled high, so it can be left floating if unused, though Renesas recommends tying it to VCC for noise immunity. This feature operates independently of the AT25DF512C-MAHN-Y's software-based protection mechanisms.

What are the erase options and typical times for the AT25DF512C-MAHN-Y?

The AT25DF512C-MAHN-Y supports four erase types: 256-byte page erase (1.5 ms typical), 4-kByte block erase (50 ms typical), 32-kByte block erase (350 ms typical), and full chip erase. These granular options allow targeted updates - for example, rewriting only a firmware parameter section without affecting the main application image. All erase operations are self-timed and report completion via status register polling, ensuring predictable timing behavior in real-time systems using the AT25DF512C-MAHN-Y.

AT25DF512C-MAHN-Y Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-UFDFN Exposed Pad
Packaging:
Tray
Product Status:
Discontinued at Digi-Key
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
512Kbit
Memory Organization:
64K x 8
Memory Interface:
SPI
Clock Frequency:
104 MHz
Write Cycle Time - Word, Page:
8µs, 3.5ms
Access Time:
-
Voltage - Supply:
1.65V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-UDFN (2x3)

AT25DF512C-MAHN-Y FAQ

1.How can I place an order for AT25DF512C-MAHN-Y through Aetrix?

Please submit a Request for Quotation (RFQ) for AT25DF512C-MAHN-Y on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AT25DF512C-MAHN-Y reliable?

The price and inventory of AT25DF512C-MAHN-Y are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25DF512C-MAHN-Y is usually 5 days.

3.What payment methods are accepted for AT25DF512C-MAHN-Y?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25DF512C-MAHN-Y transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AT25DF512C-MAHN-Y?

AT25DF512C-MAHN-Y orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AT25DF512C-MAHN-Y order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AT25DF512C-MAHN-Y?

For technical support, including AT25DF512C-MAHN-Y datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25DF512C-MAHN-Y requirements.

6.How does Aetrix verify that AT25DF512C-MAHN-Y is sourced from the original manufacturer or authorized distributors?

All AT25DF512C-MAHN-Y products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25DF512C-MAHN-Y meets industry standards.

7.What is the process for return or replacement of AT25DF512C-MAHN-Y?

All AT25DF512C-MAHN-Y units undergo pre-shipment inspection (PSI). If there is an issue with AT25DF512C-MAHN-Y, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AT25DF512C-MAHN-Y part is unused and in its original packaging.

Return procedure for AT25DF512C-MAHN-Y:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AT25DF512C-MAHN-Y Tags

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