My Inquiry
My Account
Renesas AT25DF512C-SSHNGU-B
.jpg)
- Part No.:
- AT25DF512C-SSHNGU-B
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AT25DF512C-SSHNGU-B.pdf
- Description:
- IC FLASH 512KBIT SPI 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,159
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AT25DF512C-SSHNGU-B from Renesas Electronics is a 512-Kbit SPI serial flash memory IC designed for code shadowing and embedded data storage in low-voltage systems. It operates from 1.65 V to 3.6 V, supports SPI Modes 0/3 and Dual-Output Read, delivers 104 MHz max clock frequency, achieves 6 ns clock-to-output delay, and integrates hardware write protection via WP pin.
For engineers reviewing the AT25DF512C-SSHNGU-B datasheet, AT25DF512C-SSHNGU-B pinout, AT25DF512C-SSHNGU-B application, or AT25DF512C-SSHNGU-B equivalent, key selection considerations include dual-read throughput optimization, ultra-low deep power-down current (200 nA), flexible erase granularity (256-byte page / 4-kB block), OTP security register usage, and compatibility with 1.65–3.6 V host interfaces.
Technical Context
The AT25DF512C-SSHNGU-B implements a SPI-compatible serial interface with dual I/O capability: during Dual-Output Read (0x3B opcode), both SI (I/O0) and SO (I/O1) function as data outputs, doubling read bandwidth versus standard single-output mode. Its memory array is partitioned into uniform 4-kB blocks and 256-byte pages, enabling precise erasure for mixed code/data layouts without over-erasing.
Device operation relies on command-driven state transitions-Write Enable (0x06) must precede any program/erase command; status register polling (0x05) confirms completion. Hardware protection is enforced via the active-low WP pin, which locks sectors when asserted, while the HOLD pin enables communication pause without CS deassertion or internal operation interruption.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Kbit (64 KB) organized as 256-byte pages across 256 pages; supports byte-level addressing up to 0x007FFF. |
| Supply Voltage | 1.65 V to 3.6 V-enables direct interfacing with 1.8 V and 3.3 V microcontrollers without level-shifting. |
| Max Clock Frequency | 104 MHz-supports high-speed read operations; Dual-Output Read achieves up to 50 MHz effective throughput. |
| Read Latency | 6 ns clock-to-output (tV)-minimizes wait states during instruction fetch or real-time data access. |
| Erase Granularity | 256-byte page, 4-kB block, 32-kB block, full chip-enables efficient firmware patching and log file management. |
| Power Consumption | 200 nA ultra-deep power-down current (typical)-critical for battery-backed IoT nodes requiring multi-year standby. |
| Endurance & Retention | 100,000 program/erase cycles and 20-year data retention at -40 °C to +85 °C-validated for industrial firmware storage. |
Pinout & Package
AT25DF512C-SSHNGU-B is packaged in an 8-lead SOIC (150-mil) with industry-standard pinout and JEDEC-compliant footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable signal; rising edge ends all operations; required to initiate any command sequence. |
| SCK | Serial Clock | Input clock controlling data transfer timing; data latched on rising edge, output shifted on falling edge. |
| SI (I/O0) | Serial Input / Dual-Read Output | Primary input for commands/addresses/data; becomes output (I/O0) during Dual-Output Read (0x3B) for parallel bit streaming. |
| SO (I/O1) | Serial Output / Dual-Read Output | Primary output for read data; remains output (I/O1) during Dual-Output Read to deliver second bit per clock cycle. |
| WP | Write Protect | Active-low hardware lock for sector protection; internally pulled high; must be held low to enable write/erase blocking. |
| HOLD | Hold Control | Active-low pause signal; suspends SPI communication without resetting internal state or interrupting ongoing erase/program. |
| VCC | Power Supply | Single 1.65–3.6 V supply; powers all logic and memory functions-no auxiliary voltage required. |
| GND | Ground Reference | System ground return path; required for stable operation and noise immunity in mixed-signal environments. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-Output Read Support | Enables 2-bit-per-clock read transfers using SI and SO simultaneously-doubles effective read bandwidth vs. standard SPI. |
| Flexible Erase Architecture | Supports 256-byte page, 4-kB block, 32-kB block, and full-chip erase-reduces wasted space in mixed code/data applications. |
| OTP Security Register | 128-byte one-time programmable area: 64 bytes factory-programmed unique ID + 64 bytes user-programmable for ESN or keys. |
| Ultra-Low Power Modes | 200 nA ultra-deep power-down and 5 µA deep power-down currents-extend battery life in always-on sensor nodes. |
| Hardware Write Protection | WP pin provides physical, non-volatile locking of protected sectors-prevents accidental firmware corruption during field updates. |
Applications
| Firmware Boot Storage | IoT Edge Node Data Logging |
|---|---|
Use Scenario: Storing boot code for ARM Cortex-M microcontrollers in resource-constrained wearables. IC Role / Device Role / Timing Role: Non-volatile code storage with fast random-access read for instruction fetch; Dual-Output Read reduces boot latency. Use Value: 6 ns tV and 104 MHz clock support enable sub-100 ms cold boot; 1.65 V min supply allows direct use with coin-cell-powered MCUs. |
Use Scenario: Capturing sensor telemetry in battery-operated environmental monitors deployed for 5+ years. IC Role / Device Role / Timing Role: Persistent data buffer supporting cyclic logging with partial page updates and wear leveling. Use Value: 256-byte page erase enables efficient timestamped record insertion; 200 nA ultra-deep power-down extends battery life beyond 7 years. |
| Industrial HMI Configuration Storage | Medical Device Parameter Backup |
Use Scenario: Saving UI layout settings, calibration offsets, and language packs in panel-mounted HMIs. IC Role / Device Role / Timing Role: Field-upgradable configuration store with hardware write protection to prevent unauthorized changes. Use Value: WP pin hard-locks critical sectors during normal operation; 100,000-cycle endurance ensures >10 years of daily parameter updates. |
Use Scenario: Backing up device-specific calibration coefficients and safety-critical operational limits in portable diagnostics tools. IC Role / Device Role / Timing Role: Tamper-resistant, long-retention storage for regulatory-mandated parameters with traceable serialization. Use Value: Factory-programmed 64-byte unique ID enables device-level traceability; 20-year data retention meets FDA Class II device requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q40EW | 4-Mbit density, 1.7–2.0 V supply range only, no OTP register, 8 ms typical 4-kB erase time. | Lacks ultra-low-voltage operation and hardware-protected OTP; better suited for cost-sensitive 2.0 V systems. | Select when higher density is needed and system operates strictly at 1.8 V with no requirement for unique device ID or deep power-down. |
| Macronix MX25L4005 | 4-Mbit density, 2.7–3.6 V supply only, no Dual-Output Read, 100 ms typical 4-kB erase time. | Higher voltage requirement excludes 1.8 V designs; slower erase impacts firmware update speed. | Choose only for legacy 3.3 V systems where Dual-Output Read and sub-2 V operation are unnecessary. |
Compared with W25Q40EW and MX25L4005, AT25DF512C-SSHNGU-B uniquely combines 1.65 V operation, Dual-Output Read, 200 nA deep power-down, and factory-programmed UID-making it optimal for next-generation ultra-low-power, secure, and mixed-voltage embedded systems.
Availability
AT25DF512C-SSHNGU-B is available at Aetrix Electronics and suitable for firmware boot storage, IoT edge node data logging, and industrial HMI configuration storage requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for AT25DF512C-SSHNGU-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The AT25DF512C belongs to Renesas' serial flash memory product line, engineered specifically for low-voltage, high-reliability embedded code and data storage in space-constrained, battery-powered applications.
FAQ
What is the operating voltage range of the AT25DF512C-SSHNGU-B?
The AT25DF512C-SSHNGU-B operates from 1.65 V to 3.6 V across its full temperature range. At 1.7–3.6 V, it supports the full -40 °C to +85 °C industrial temperature grade; at 1.65–3.6 V, operation is specified from -10 °C to +85 °C. This wide range enables direct integration with 1.8 V and 3.3 V host systems without level shifters, and the AT25DF512C-SSHNGU-B maintains full command functionality-including Dual-Output Read and OTP programming-across the entire voltage window.
Does the AT25DF512C-SSHNGU-B support true dual-I/O or quad-I/O operation?
No, the AT25DF512C-SSHNGU-B supports Dual-Output Read only-not full dual-I/O or quad-I/O. In Dual-Output Read mode (0x3B command), SI (I/O0) and SO (I/O1) both act as outputs to deliver two bits per SCK cycle, but SI cannot accept input data during this mode. The device does not support dual-input or quad-input/output protocols such as QPI or DTR. All command, address, and write-data transfers remain single-I/O (SI input, SO output), consistent with standard SPI Mode 0/3 operation.
How is hardware write protection implemented on the AT25DF512C-SSHNGU-B?
Hardware write protection on the AT25DF512C-SSHNGU-B is controlled by the active-low WP pin. When WP is driven low, it locks protected memory sectors as defined by the status register's BP bits-preventing program and erase commands from affecting those regions regardless of software state. The WP pin is internally pulled high, so it may float if unused, but Renesas recommends tying it to VCC externally unless protection is required. This hardware mechanism operates independently of the Write Enable latch and provides fail-safe, non-volatile sector locking that persists through power cycles.
What is the purpose and structure of the OTP security register in the AT25DF512C-SSHNGU-B?
The AT25DF512C-SSHNGU-B includes a 128-byte One-Time Programmable (OTP) security register: the first 64 bytes are factory-programmed with a unique device identifier (UID), and the remaining 64 bytes are user-programmable once. This register supports secure device serialization, electronic serial number (ESN) storage, cryptographic key binding, and anti-counterfeiting. Programming is performed via the 0x9B command and requires prior Write Enable; once written, OTP bytes cannot be altered. The UID is guaranteed globally unique and traceable, making the AT25DF512C-SSHNGU-B suitable for regulated medical and industrial applications requiring device-level identity assurance.
Can the AT25DF512C-SSHNGU-B be used in battery-powered applications with multi-year standby requirements?
Yes-the AT25DF512C-SSHNGU-B is explicitly optimized for ultra-low-power battery operation. In Ultra-Deep Power-Down mode (entered via 0x79 command), it draws just 200 nA typical current, enabling multi-year standby on coin cells or energy-harvesting sources. Its 20-year data retention at -40 °C to +85 °C and 100,000 program/erase cycles ensure reliability across extended deployments. Combined with fast wake-up (<10 µs resume from Deep Power-Down) and low-active-current operation (25 µA standby, 4.5 mA read), the AT25DF512C-SSHNGU-B meets stringent requirements for remote sensors, smart meters, and implantable diagnostics where maintenance-free longevity is mandatory.
AT25DF512C-SSHNGU-B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 512Kbit
- Memory Organization:
- 64K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 104 MHz
- Write Cycle Time - Word, Page:
- 8µs, 3.5ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AT25DF512C-SSHNGU-B FAQ
1.How can I place an order for AT25DF512C-SSHNGU-B through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25DF512C-SSHNGU-B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25DF512C-SSHNGU-B reliable?
The price and inventory of AT25DF512C-SSHNGU-B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25DF512C-SSHNGU-B is usually 5 days.
3.What payment methods are accepted for AT25DF512C-SSHNGU-B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25DF512C-SSHNGU-B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25DF512C-SSHNGU-B?
AT25DF512C-SSHNGU-B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25DF512C-SSHNGU-B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25DF512C-SSHNGU-B?
For technical support, including AT25DF512C-SSHNGU-B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25DF512C-SSHNGU-B requirements.
6.How does Aetrix verify that AT25DF512C-SSHNGU-B is sourced from the original manufacturer or authorized distributors?
All AT25DF512C-SSHNGU-B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25DF512C-SSHNGU-B meets industry standards.
7.What is the process for return or replacement of AT25DF512C-SSHNGU-B?
All AT25DF512C-SSHNGU-B units undergo pre-shipment inspection (PSI). If there is an issue with AT25DF512C-SSHNGU-B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25DF512C-SSHNGU-B part is unused and in its original packaging.
Return procedure for AT25DF512C-SSHNGU-B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AT25DF512C-SSHNGU-B Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
