Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas AT25DF512C-SSHN-T

Part No.:
AT25DF512C-SSHN-T
Manufacturer:
Renesas
Category:
Memory
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixAT25DF512C-SSHN-T.pdf
Description:
IC FLASH 512KBIT SPI 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,784

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AT25DF512C-SSHN-T from Renesas Electronics is a 512-Kbit SPI serial Flash memory IC designed for code shadowing and embedded data storage in resource-constrained systems. It operates from 1.65 V to 3.6 V, supports SPI Modes 0/3 and Dual-Output Read, delivers 104 MHz max clock frequency, and achieves 6 ns clock-to-output timing. It is used in firmware boot storage for microcontrollers in industrial control modules.

For engineers reviewing the AT25DF512C-SSHN-T datasheet, AT25DF512C-SSHN-T pinout, AT25DF512C-SSHN-T application, or AT25DF512C-SSHN-T equivalent, key selection criteria include dual-read throughput, ultra-low deep power-down current (200 nA), flexible erase granularity (256-byte page to full chip), OTP security register, and SOIC-8 package compatibility with legacy PCB layouts.

Technical Context

The AT25DF512C-SSHN-T implements a dedicated SPI interface with hardware-controlled write protection via WP pin and suspend/resume capability via HOLD pin. Its memory architecture supports three erase granularities-256-byte pages, uniform 4-kByte blocks, and uniform 32-kByte blocks-enabling efficient co-location of code and configuration data without cross-contamination during updates.

Dual-Output Read mode uses both SI and SO pins as outputs (I/O0/I/O1) to deliver two bits per SCK falling edge, doubling read bandwidth versus standard SPI Read Array (03h). The device integrates a 128-byte OTP security register with 64 bytes factory-programmed unique ID and 64 bytes user-programmable space for secure device serialization.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 512 Kbit (64 KByte) - sufficient for bootloader + firmware image in compact MCU-based designs
Supply Voltage Range 1.65 V to 3.6 V - enables direct interfacing with 1.8 V and 3.3 V logic domains without level shifters
Max Clock Frequency 104 MHz - supports high-speed code execution from XIP (eXecute-In-Place) configurations
Read Latency (tV) 6 ns - minimizes instruction fetch delay in real-time deterministic applications
Erase Granularity 256-byte page / 4-kByte block / 32-kByte block - allows atomic firmware patching without erasing unrelated code segments
Deep Power-Down Current 200 nA typical - extends battery life in always-on sensor nodes and low-power IoT endpoints
Endurance & Retention 100,000 program/erase cycles / 20 years data retention - meets industrial lifecycle requirements

Pinout & Package

AT25DF512C-SSHN-T is packaged in an industry-standard 8-lead SOIC (150-mil) with gull-wing leads, RoHS-compliant, and rated for -40 °C to +85 °C operation at 1.7–3.6 V supply.

Pin/Terminal Circuit Role Design Meaning
CS Chip Select input Active-low enable; must transition high→low to initiate command, low→high to terminate; controls SO high-impedance state
SCK Serial clock input Drives all timing; data latched on rising edge, output shifted on falling edge; supports up to 104 MHz
SI (I/O0) Serial input / Dual-Read output Primary command/address/data input; becomes I/O0 output during Dual-Output Read (3Bh) for parallel bit streaming
SO (I/O1) Serial output / Dual-Read output Standard read data output; remains I/O1 output during Dual-Output Read to deliver second bit per clock cycle
WP Hardware write protect input Low-active pin enabling sector locking; internally pulled high; prevents accidental writes when tied to VCC
HOLD Communication pause input Low-active; suspends ongoing SPI transfer without deselecting CS or resetting internal state; requires SCK low at assertion
VCC Power supply 1.65–3.6 V single supply; powers core, I/O, and charge pump; no auxiliary voltage required for programming
GND Ground reference System ground return path; decoupling capacitor placement critical for stable 104 MHz operation

Key Features

Feature Design Value
Dual-Output Read (3Bh) Delivers 2× read bandwidth vs. standard SPI Read Array (03h) by using SI+SO as concurrent data outputs
Flexible Erase Architecture Enables independent update of firmware modules and configuration data via 256-byte page, 4-kB, and 32-kB erase blocks
OTP Security Register 128-byte field with 64-byte factory-unique ID + 64-byte user-programmable space for ESN or cryptographic keys
Ultra-Deep Power-Down Mode Reduces quiescent current to 200 nA typical-ideal for battery-powered devices requiring multi-year shelf life
Hardware Write Protection WP pin provides physical lock for protected sectors, complementing software-based status register protection

Applications

Firmware Boot Storage Industrial Sensor Node Data Logging

Use Scenario: Storing bootloader and application firmware for ARM Cortex-M microcontrollers in programmable logic controllers.

IC Role / Device Role / Timing Role: Non-volatile code storage with XIP-capable read performance and atomic firmware updates.

Use Value: 6 ns tV and 104 MHz clock support deterministic boot timing; 256-byte page erase enables patch-level firmware upgrades.

Use Scenario: Capturing calibration coefficients, event timestamps, and sensor history in battery-powered environmental monitors.

IC Role / Device Role / Timing Role: Low-power persistent data buffer with fast write latency and long-term retention.

Use Value: 1.5 ms typical page program time enables rapid logging bursts; 200 nA deep power-down extends 10-year battery life.

Secure Device Identity Management Consumer Appliance Configuration Storage

Use Scenario: Embedding unique device identifiers and encrypted keys in smart home hubs for cloud authentication.

IC Role / Device Role / Timing Role: Tamper-resistant identity vault leveraging factory-programmed and user-programmable OTP space.

Use Value: 64-byte factory ID ensures unclonable serialization; OTP write-once behavior prevents key overwrites or corruption.

Use Scenario: Storing user preferences, calibration offsets, and operational history in white-goods controllers (e.g., washing machines).

IC Role / Device Role / Timing Role: Robust parameter storage tolerant to frequent power cycling and voltage brownouts.

Use Value: 100,000 endurance cycles withstand daily configuration changes; 1.65 V min operation ensures reliability during brownout conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
W25Q80DVSSIG 8 Mbit density, 133 MHz max clock, Quad SPI support, no Dual-Output Read; 2.7–3.6 V only Better suited for larger firmware images; lacks 1.65 V operation and 256-byte page erase Select when higher density and quad interface are needed, and 1.65 V operation is not required
SST25VF512A-33-4I-SAE 512 Kbit, 33 MHz max clock, standard SPI only, 2.7–3.6 V, no OTP register or deep power-down Limited to low-speed legacy systems; no low-power modes or security features Select only for cost-sensitive, non-battery, non-secure applications where speed and features are secondary

Compared with W25Q80DVSSIG and SST25VF512A-33-4I-SAE, the AT25DF512C-SSHN-T uniquely balances ultra-low voltage operation (1.65 V), fine-grained 256-byte erasure, Dual-Output Read throughput, and integrated OTP security-making it optimal for compact, secure, battery-aware embedded designs.

Availability

AT25DF512C-SSHN-T is available at Aetrix Electronics and suitable for industrial control systems, battery-powered IoT sensors, secure consumer appliances, and automotive body electronics requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for AT25DF512C-SSHN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The AT25DF512C-SSHN-T belongs to Renesas' serial Flash memory product line, engineered specifically for reliable, low-voltage, high-efficiency code and data storage in space- and power-constrained embedded systems.

FAQ

What is the operating voltage range of the AT25DF512C-SSHN-T?

The AT25DF512C-SSHN-T operates from 1.65 V to 3.6 V across its full temperature range. At 1.65–3.6 V, it supports -10 °C to +85 °C; at 1.7–3.6 V, it extends to -40 °C to +85 °C. This wide supply range eliminates need for external regulators in mixed-voltage systems and ensures robustness during brownout conditions. The AT25DF512C-SSHN-T performs all functions-including program, erase, and read-within this single supply rail.

Does the AT25DF512C-SSHN-T support Dual-Output Read, and how does it improve performance?

Yes, the AT25DF512C-SSHN-T supports Dual-Output Read using opcode 3Bh, which configures both SI and SO pins as outputs (I/O0/I/O1) to deliver two bits per SCK falling edge. This doubles effective read throughput versus standard SPI Read Array (03h), achieving up to 50 MHz effective data rate. The AT25DF512C-SSHN-T maintains full command compatibility while enabling faster code execution and reduced read latency in XIP architectures.

What erase options are available on the AT25DF512C-SSHN-T, and why does granularity matter?

The AT25DF512C-SSHN-T offers four erase options: 256-byte page (81h), 4-kByte block (20h), 32-kByte block (52h), and full chip (60h/C7h). Fine 256-byte granularity prevents unnecessary erasure of adjacent code or data during firmware patches. The AT25DF512C-SSHN-T's optimized block sizes reduce wasted memory space-critical in constrained 64 KByte capacity-and enable independent updates of bootloader, application, and configuration sections.

How is security implemented in the AT25DF512C-SSHN-T?

Security in the AT25DF512C-SSHN-T centers on a 128-byte One-Time Programmable (OTP) Security Register: 64 bytes are factory-programmed with a unique device identifier, and 64 bytes are user-programmable for keys or serial numbers. Once written, OTP data cannot be altered. The AT25DF512C-SSHN-T also supports hardware write protection via the WP pin and software-based sector locking through status register bits-providing layered protection against unauthorized modification.

What power-saving modes does the AT25DF512C-SSHN-T offer, and what are their current draws?

The AT25DF512C-SSHN-T offers Deep Power-Down (B9h) drawing 5 µA typical and Ultra-Deep Power-Down (79h) drawing 200 nA typical. Both modes retain memory contents and resume instantly upon wake command (ABh or chip-select toggle). These ultra-low currents make the AT25DF512C-SSHN-T ideal for energy-harvesting and coin-cell-powered applications. The AT25DF512C-SSHN-T exits Ultra-Deep Power-Down in under 30 µs, minimizing wake latency.

AT25DF512C-SSHN-T Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
512Kbit
Memory Organization:
64K x 8
Memory Interface:
SPI
Clock Frequency:
104 MHz
Write Cycle Time - Word, Page:
8µs, 3.5ms
Access Time:
-
Voltage - Supply:
1.65V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

AT25DF512C-SSHN-T FAQ

1.How can I place an order for AT25DF512C-SSHN-T through Aetrix?

Please submit a Request for Quotation (RFQ) for AT25DF512C-SSHN-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AT25DF512C-SSHN-T reliable?

The price and inventory of AT25DF512C-SSHN-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25DF512C-SSHN-T is usually 5 days.

3.What payment methods are accepted for AT25DF512C-SSHN-T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25DF512C-SSHN-T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AT25DF512C-SSHN-T?

AT25DF512C-SSHN-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AT25DF512C-SSHN-T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AT25DF512C-SSHN-T?

For technical support, including AT25DF512C-SSHN-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25DF512C-SSHN-T requirements.

6.How does Aetrix verify that AT25DF512C-SSHN-T is sourced from the original manufacturer or authorized distributors?

All AT25DF512C-SSHN-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25DF512C-SSHN-T meets industry standards.

7.What is the process for return or replacement of AT25DF512C-SSHN-T?

All AT25DF512C-SSHN-T units undergo pre-shipment inspection (PSI). If there is an issue with AT25DF512C-SSHN-T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AT25DF512C-SSHN-T part is unused and in its original packaging.

Return procedure for AT25DF512C-SSHN-T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AT25DF512C-SSHN-T Tags

  • AT25DF512C-SSHN-T
  • AT25DF512C-SSHN-T PDF
  • AT25DF512C-SSHN-T Datasheet
  • AT25DF512C-SSHN-T Specifications
  • AT25DF512C-SSHN-T Images
  • Renesas
  • Renesas AT25DF512C-SSHN-T
  • Buy AT25DF512C-SSHN-T
  • AT25DF512C-SSHN-T Price
  • AT25DF512C-SSHN-T Distributor
  • AT25DF512C-SSHN-T Supplier
  • AT25DF512C-SSHN-T Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER