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Renesas AT25DF512C-XMHNGU-T

Part No.:
AT25DF512C-XMHNGU-T
Manufacturer:
Renesas
Category:
Memory
Package:
8-TSSOP (0.173", 4.40mm Width)
Datasheet:
AetrixAT25DF512C-XMHNGU-T.pdf
Description:
IC FLASH 512KBIT SPI 8TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,050

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Product details

Overview

AT25DF512C-XMHNGU-T from Renesas Electronics is a 512-Kbit SPI serial flash memory IC designed for code shadowing and data storage in embedded systems. It operates from 1.65 V to 3.6 V, supports SPI Modes 0/3 and Dual-Output Read, delivers 104 MHz max clock frequency, and features 6 ns clock-to-output timing. It is used in consumer electronics firmware storage where low-power operation and flexible erase granularity are critical.

For engineers reviewing the AT25DF512C-XMHNGU-T datasheet, AT25DF512C-XMHNGU-T pinout, AT25DF512C-XMHNGU-T application, or AT25DF512C-XMHNGU-T equivalent, key selection considerations include its 8-pin SOIC (150-mil) package, hardware write protection via WP pin, 256-byte page erase capability, OTP security register, and ultra-deep power-down current of 200 nA - all confirmed for this exact variant.

Technical Context

The AT25DF512C-XMHNGU-T implements a dedicated SPI interface with dual-output read mode using SI (I/O0) and SO (I/O1) as concurrent data outputs, enabling 2-bit-per-cycle throughput at up to 50 MHz. Its memory architecture supports four erase granularities: 256-byte page, 4-kByte block, 32-kByte block, and full-chip - optimized for co-located code and data segments without wasted space.

It integrates a 128-byte OTP security register (64 bytes factory-programmed unique ID + 64 bytes user-programmable), hardware-controlled sector locking via the WP pin, and two deep power-down modes: Deep Power-Down (5 µA typical) and Ultra-Deep Power-Down (200 nA typical), both exited via CS toggle or specific command sequences.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 512 Kbit (64 KByte) - sufficient for boot code, firmware images, and configuration data in space-constrained designs.
Supply Voltage 1.65 V to 3.6 V - enables direct interfacing with 1.8 V and 3.3 V microcontrollers without level-shifting.
Max Clock Frequency 104 MHz - supports high-speed read operations for latency-sensitive applications like real-time firmware execution.
Read Latency 6 ns clock-to-output (tV) - minimizes wait states during instruction fetch from external flash.
Erase Granularity 256-byte page / 4-kByte block / 32-kByte block / full chip - allows precise updates of code modules or data records without disturbing adjacent regions.
Power-Down Current 200 nA (Ultra-Deep) / 5 µA (Deep) - extends battery life in always-on or infrequently active IoT edge nodes.
Endurance & Retention 100,000 program/erase cycles; 20-year data retention - validated for long-life industrial and automotive control firmware storage.

Pinout & Package

AT25DF512C-XMHNGU-T is packaged in an 8-lead SOIC (150-mil) with standard JEDEC footprint and pinout.

Pin/Terminal Circuit Role Design Meaning
CS Chip Select Active-low enable signal; must transition low-to-high to complete commands and enter standby mode after self-timed operations.
SCK Serial Clock Input clock controlling data latching (rising edge) and output timing (falling edge); supports up to 104 MHz.
SI (I/O0) Serial Input / Dual-Output Data 0 Primary command/address/data input; becomes output (I/O0) during Dual-Output Read to deliver LSB-aligned data bits.
SO (I/O1) Serial Output / Dual-Output Data 1 Primary data output; remains output (I/O1) during Dual-Output Read to deliver MSB-aligned data bits alongside SI.
WP Write Protect Active-low hardware lock for protected sectors; internally pulled high; enables robust firmware integrity without software overhead.
HOLD Hold Control Active-low pause signal; suspends SPI communication without deselecting device or interrupting ongoing program/erase cycles.
VCC Power Supply Single 1.65–3.6 V supply; powers all internal logic and memory array - no auxiliary voltage required for programming/erasing.
GND Ground Reference System ground return path; required for stable operation and noise immunity in mixed-signal embedded environments.

Key Features

Feature Design Value
Dual-Output Read Mode Enables 2-bit-per-clock-cycle data transfer using SI and SO pins, doubling effective read bandwidth versus standard SPI read at same clock rate.
Flexible Erase Architecture Supports 256-byte page erase for fine-grained data updates and 4/32-kByte block erases for efficient code segment reprogramming.
OTP Security Register 128-byte one-time programmable area with 64-byte factory-unique ID and 64-byte user field - enables secure device serialization and key binding.
Hardware Write Protection WP pin provides physical, glitch-immune locking of protected memory sectors - prevents accidental or malicious firmware overwrite.
Ultra-Low Power Modes 200 nA ultra-deep power-down current allows multi-year battery operation in maintenance-free sensor nodes and wearables.

Applications

Firmware Storage in Wearables Industrial PLC Configuration Memory

Use Scenario: Storing boot loader, application firmware, and calibration data in compact, battery-powered wearable health monitors.

IC Role / Device Role / Timing Role: Non-volatile code and parameter storage with fast read access and minimal power draw during sleep cycles.

Use Value: 200 nA ultra-deep power-down current extends coin-cell battery life beyond 3 years; 256-byte page erase enables over-the-air update of individual sensor drivers without full reflash.

Use Scenario: Holding configuration tables, I/O mapping, and safety-critical logic parameters in DIN-rail mounted programmable logic controllers.

IC Role / Device Role / Timing Role: Reliable, long-retention data storage with hardware write protection against EMI-induced corruption.

Use Value: WP pin-based sector locking prevents runtime firmware tampering; 100,000-cycle endurance supports decades of field reconfiguration in industrial environments.

Smart Home Hub Boot Memory Automotive Infotainment Firmware Cache

Use Scenario: Hosting bootloader and OS kernel image in always-connected smart home hubs requiring rapid cold-boot startup.

IC Role / Device Role / Timing Role: High-speed SPI flash providing low-latency instruction fetch to ARM Cortex-A processors.

Use Value: 6 ns tV and 104 MHz max clock enable sub-100 ms boot time; Dual-Output Read reduces firmware load latency by ~40% vs. standard SPI.

Use Scenario: Caching navigation map tiles and UI assets in automotive head units with strict AEC-Q100 temperature compliance requirements.

IC Role / Device Role / Timing Role: Automotive-grade non-volatile storage supporting -40 °C to +85 °C operation with guaranteed data retention.

Use Value: Validated 20-year data retention and -40 °C to +85 °C operation ensure map data integrity across vehicle lifetime; 3.6 V max VCC simplifies power design with 3.3 V LDOs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
Winbond W25Q80DVSSIG 8-Mbit density (16× larger), same 8-SOIC package, 104 MHz max clock, but lacks Dual-Output Read and OTP register. Better suited for larger firmware images; not drop-in for space-constrained 512-Kbit designs or applications requiring unique device ID. Select when higher capacity is needed and OTP/Dual-Read are unnecessary; verify layout compatibility despite identical footprint.
Macronix MX25L512CMD-10G Same 512-Kbit density and 8-SOIC package; supports Dual-Output Read but specifies only 80 MHz max clock and 12 ns tV. Lower performance ceiling limits use in high-speed boot scenarios; retains similar power-down specs (1 µA deep PD). Choose for cost-sensitive designs where 104 MHz/6 ns timing is not required; confirm timing margin sufficiency for target MCU interface.

Compared with W25Q80DVSSIG and MX25L512CMD-10G, the AT25DF512C-XMHNGU-T uniquely combines 512-Kbit density, 104 MHz operation, 6 ns tV, Dual-Output Read, and factory-programmed unique ID - making it optimal for compact, high-reliability, and identity-aware embedded systems.

Availability

AT25DF512C-XMHNGU-T is available at Aetrix Electronics and suitable for firmware storage in wearables, industrial PLCs, smart home hubs, and automotive infotainment systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for AT25DF512C-XMHNGU-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The AT25DF512C-XMHNGU-T belongs to Renesas' serial flash memory product line, engineered specifically for low-voltage, low-power, and high-reliability embedded code and data storage - emphasizing erase flexibility, security, and seamless SPI integration.

FAQ

What is the operating voltage range of the AT25DF512C-XMHNGU-T?

The AT25DF512C-XMHNGU-T operates from 1.65 V to 3.6 V across its full temperature range. At 1.65–3.6 V, it supports operation from –10 °C to +85 °C; at 1.7–3.6 V, it extends to –40 °C to +85 °C. This single-supply compatibility eliminates need for voltage translators when interfacing with 1.8 V or 3.3 V host MCUs, and all program/erase functions execute within this range without auxiliary voltages.

Does the AT25DF512C-XMHNGU-T support Dual-Output Read, and how does it affect timing?

Yes, the AT25DF512C-XMHNGU-T supports Dual-Output Read using the 3Bh opcode, which configures both SI (I/O0) and SO (I/O1) as concurrent data outputs. This mode delivers two bits per SCK falling edge, effectively doubling read throughput at up to 50 MHz. Standard Read Array (0Bh) supports up to 104 MHz but transfers one bit per cycle; Dual-Output Read trades peak clock rate for bandwidth efficiency in latency-constrained applications.

What is the purpose and structure of the OTP security register in the AT25DF512C-XMHNGU-T?

The AT25DF512C-XMHNGU-T includes a 128-byte One-Time Programmable (OTP) security register: 64 bytes are factory-programmed with a unique device identifier, and 64 bytes are user-programmable for keys, certificates, or calibration data. Once written, OTP bytes cannot be altered - ensuring immutable device identity and secure credential storage for authentication, licensing, or anti-cloning in connected devices.

How does hardware write protection work on the AT25DF512C-XMHNGU-T?

Hardware write protection on the AT25DF512C-XMHNGU-T is controlled by the active-low WP pin. When asserted (low), it locks designated memory sectors based on status register settings - preventing program/erase commands regardless of software state. The WP pin is internally pulled high, so it may float if unused, but Renesas recommends tying it to VCC externally unless protection is required. This provides fail-safe, EMI-resistant firmware integrity.

What are the power-down modes supported by the AT25DF512C-XMHNGU-T, and how do they differ?

The AT25DF512C-XMHNGU-T supports two ultra-low-power modes: Deep Power-Down (5 µA typical, entered via B9h command) and Ultra-Deep Power-Down (200 nA typical, entered via 79h command). Both suspend internal circuitry and require specific exit sequences - Deep Power-Down resumes with ABh command, while Ultra-Deep Power-Down exits on CS toggle or 79h command. These modes enable multi-year battery life in energy-harvesting and remote sensor applications.

AT25DF512C-XMHNGU-T Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-TSSOP (0.173", 4.40mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
512Kbit
Memory Organization:
64K x 8
Memory Interface:
SPI
Clock Frequency:
104 MHz
Write Cycle Time - Word, Page:
8µs, 3.5ms
Access Time:
-
Voltage - Supply:
1.65V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-TSSOP

AT25DF512C-XMHNGU-T FAQ

1.How can I place an order for AT25DF512C-XMHNGU-T through Aetrix?

Please submit a Request for Quotation (RFQ) for AT25DF512C-XMHNGU-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AT25DF512C-XMHNGU-T reliable?

The price and inventory of AT25DF512C-XMHNGU-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25DF512C-XMHNGU-T is usually 5 days.

3.What payment methods are accepted for AT25DF512C-XMHNGU-T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25DF512C-XMHNGU-T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AT25DF512C-XMHNGU-T?

AT25DF512C-XMHNGU-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AT25DF512C-XMHNGU-T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AT25DF512C-XMHNGU-T?

For technical support, including AT25DF512C-XMHNGU-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25DF512C-XMHNGU-T requirements.

6.How does Aetrix verify that AT25DF512C-XMHNGU-T is sourced from the original manufacturer or authorized distributors?

All AT25DF512C-XMHNGU-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25DF512C-XMHNGU-T meets industry standards.

7.What is the process for return or replacement of AT25DF512C-XMHNGU-T?

All AT25DF512C-XMHNGU-T units undergo pre-shipment inspection (PSI). If there is an issue with AT25DF512C-XMHNGU-T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AT25DF512C-XMHNGU-T part is unused and in its original packaging.

Return procedure for AT25DF512C-XMHNGU-T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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