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Renesas AT25DL081-SSHN-B

Part No.:
AT25DL081-SSHN-B
Manufacturer:
Renesas
Category:
Memory
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixAT25DL081-SSHN-B.pdf
Description:
IC FLASH 8MBIT SPI 100MHZ 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,829

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Product details

Overview

AT25DL081-SSHN-B from Renesas Electronics is an 8-Mbit serial Flash memory IC designed for code shadowing and secure data storage in 1.8 V embedded systems. It operates from 1.65 V to 1.95 V, supports SPI Modes 0/3 and RapidS™ up to 100 MHz, features 4-kB/32-kB/64-kB uniform block erase, and includes hardware write protection via WP pin.

For engineers reviewing the AT25DL081-SSHN-B datasheet, AT25DL081-SSHN-B pinout, AT25DL081-SSHN-B application, or AT25DL081-SSHN-B equivalent, this page delivers verified electrical specs, dual-I/O timing behavior, sector lockdown capability, OTP security register layout, and industrial-temperature SOIC package details - all critical for boot code integrity, firmware update resilience, and secure key storage design.

Technical Context

The AT25DL081-SSHN-B implements a flexible erase architecture with 16 × 64-kB sectors, enabling granular code/data partitioning without memory waste. Its Dual-Input Program and Dual-Output Read modes double effective I/O bandwidth by using SI/SO bidirectionally under RapidS™ protocol.

It integrates two independent protection layers: software-configurable sector protection (with Global Protect/Unprotect) and hardware-enforced sector lockdown - including permanent freeze option - plus a 128-byte OTP security register (64 B factory preprogrammed, 64 B user-programmable) for ESN or cryptographic key storage.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 8 Mbit (1 MByte), sufficient for boot firmware + configuration + small runtime data in space-constrained designs
Supply Voltage 1.65 V – 1.95 V - compatible with 1.8 V core logic, eliminates level-shifting in modern low-voltage SoC interfaces
Max Clock Frequency 100 MHz (RapidS™), 85 MHz (standard SPI) - enables sub-100 ns instruction fetch latency in code-execution-from-Flash scenarios
Read Latency tV ≤ 5 ns clock-to-output - minimizes wait states during high-speed sequential reads
Erase Granularity Uniform 4-kB, 32-kB, and 64-kB blocks - allows precise firmware patching without disturbing adjacent code or calibration data
Endurance & Retention 100,000 program/erase cycles; 20-year data retention - validated for field-updatable industrial controllers and medical devices
Power Consumption 10 mA active read current (20 MHz); 8 µA deep power-down - supports battery-backed operation in always-on edge nodes

Pinout & Package

AT25DL081-SSHN-B is packaged in an 8-lead, 150-mil narrow SOIC (Small Outline Integrated Circuit) with standard JEDEC footprint and RoHS-compliant lead finish.

Pin/Terminal Circuit Role Design Meaning
CS Chip Select Active-low enable; must transition low-to-high only after command completion to avoid premature standby entry during erase/program
SCK Serial Clock Controls data latching (rising edge on SI) and output timing (falling edge on SO); determines max interface speed and jitter tolerance
SI (SIO) Serial Input / Dual-Output Data Primary command/address/data input; becomes SIO output during Dual-Output Read to double throughput
SO (SOI) Serial Output / Dual-Input Data Primary data output; becomes SOI input during Dual-Input Program to accept parallel bitstream for faster programming
WP Write Protect Hardware lock for protected sectors; low-active; internally pulled high - requires external tie to VCC if unused to prevent floating-induced glitches
HOLD Communication Pause Temporarily suspends SPI transaction without resetting state machine; requires CS asserted and SCK low to activate
VCC Power Supply 1.65–1.95 V supply; powers all internal logic and charge pumps - no auxiliary voltage needed for programming/erasing
GND Ground Reference System ground return path; must be low-impedance and co-located with VCC decoupling to minimize noise on sensitive read paths

Key Features

Feature Design Value
Dual-I/O RapidS™ Interface Enables 200 MB/s effective read bandwidth (100 MHz × 2 bits/cycle), reducing boot time and firmware load latency in resource-constrained hosts
Flexible Erase Architecture Supports 4-kB, 32-kB, 64-kB, and full-chip erase - allows safe over-the-air updates of individual firmware modules without risking corruption of bootloader or calibration tables
Sector Lockdown with Freeze Permits permanent read-only locking of any combination of 64-kB sectors - prevents tampering with immutable security keys, boot ROM, or regulatory compliance firmware
128-byte OTP Security Register 64 bytes factory-programmed (e.g., unique ID), 64 bytes user-programmable - provides trusted root-of-trust storage for device authentication and secure boot chain validation
Program/Erase Suspend & Resume Allows interrupting long erase cycles (e.g., 550 ms 64-kB block erase) to service real-time interrupts, then resuming - essential for deterministic response in industrial PLCs

Applications

Secure Boot Firmware Storage Firmware Over-the-Air (FOTA) Update Partition

Use Scenario: Storing immutable bootloader and initial firmware image in embedded gateways requiring secure startup verification.

IC Role / Device Role / Timing Role: Nonvolatile code storage with hardware write protection and sector lockdown to prevent unauthorized modification during power cycling or debug access.

Use Value: Ensures boot integrity via permanently locked 64-kB sector containing signed bootloader and public key - resistant to physical or remote firmware rollback attacks.

Use Scenario: Hosting field-upgradable application firmware in consumer IoT hubs where partial updates must avoid corrupting running services.

IC Role / Device Role / Timing Role: Dual-I/O Flash memory supporting fast, atomic 32-kB block erases and byte/page programming for delta-patch deployment.

Use Value: Enables sub-second firmware swap using 4-kB erase granularity and suspend/resume - maintains system responsiveness during background updates.

Calibration Data & Configuration Storage Secure Key and Identity Storage

Use Scenario: Retaining sensor calibration coefficients and user preferences in medical wearables operating across -40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Industrial-grade serial Flash with 20-year data retention and 100K-cycle endurance for infrequent but critical nonvolatile parameter writes.

Use Value: Eliminates need for separate EEPROM; 64-kB sectors allow isolated, individually protected storage zones for calibration vs. settings - preventing accidental overwrite.

Use Scenario: Storing device-specific cryptographic keys and Electronic Serial Numbers (ESN) in automotive telematics control units.

IC Role / Device Role / Timing Role: OTP security register + sector lockdown used to store AES keys and certificate fingerprints with hardware-enforced read-only access post-programming.

Use Value: Provides tamper-resistant key storage without external secure element - meets ISO/SAE 21434 requirements for key lifecycle management in connected vehicles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
Winbond W25Q80DVSSIG 8-Mbit SPI Flash, 1.65–1.95 V, 104 MHz max, but lacks Dual-I/O and sector lockdown; uses standard 8-pin SOIC No hardware freeze capability or OTP register - unsuitable for secure boot or key storage requiring permanent read-only enforcement Select when cost sensitivity outweighs security requirements and RapidS™ bandwidth is unnecessary
Macronix MX25L8006EM1I-12G 8-Mbit SPI Flash, 2.7–3.6 V supply only; incompatible voltage range; supports 80 MHz, no Dual-I/O or OTP register Requires level-shifting for 1.8 V systems; no sector lockdown or dedicated security register - limited to basic code storage Choose only for legacy 3.3 V designs where AT25DL081-SSHN-B's 1.8 V operation is not required

Compared with W25Q80DVSSIG and MX25L8006EM1I-12G, the AT25DL081-SSHN-B uniquely delivers 1.8 V operation with Dual-I/O bandwidth, hardware-frozen sector lockdown, and factory/user OTP space - making it the only option among the three that satisfies secure boot, FOTA resilience, and cryptographic key storage in compact industrial and automotive edge nodes.

Availability

AT25DL081-SSHN-B is available at Aetrix Electronics and suitable for industrial control panels, automotive telematics units, and medical wearable devices requiring stable component supply, long-term manufacturability, and guaranteed green (RoHS-compliant) packaging.

Supply support for AT25DL081-SSHN-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.

The AT25DL081-SSHN-B belongs to Renesas' serial Flash memory product line, engineered specifically for secure, low-voltage, high-reliability code and data storage in resource-constrained embedded systems demanding industrial temperature operation and robust protection features.

FAQ

What is the operating voltage range of the AT25DL081-SSHN-B?

The AT25DL081-SSHN-B operates from 1.65 V to 1.95 V, optimized for 1.8 V systems. This single-supply range eliminates the need for auxiliary voltages during program or erase operations, simplifying power design and ensuring compatibility with modern low-voltage SoCs and MCUs. The AT25DL081-SSHN-B maintains full functionality-including RapidS™ mode and sector lockdown-across this entire range.

Does the AT25DL081-SSHN-B support dual-line read and write operations?

Yes, the AT25DL081-SSHN-B supports Dual-Output Read (using SI and SO pins simultaneously) and Dual-Input Program (using SI and SO as inputs) under RapidS™ protocol. These modes double effective data throughput versus standard SPI, enabling faster boot sequences and firmware loads. The AT25DL081-SSHN-B achieves 100 MHz operation in RapidS™ mode, delivering up to 200 MB/s effective bandwidth.

How does sector lockdown work on the AT25DL081-SSHN-B?

The AT25DL081-SSHN-B allows any combination of its 16 × 64-kB sectors to be permanently locked down via software commands, with an optional freeze function that disables further lockdown changes. Once frozen, those sectors become read-only for life - even after power cycles or resets. This feature is implemented independently of standard sector protection and is critical for securing bootloader code or cryptographic keys. The AT25DL081-SSHN-B enforces this at the silicon level.

What is the purpose and structure of the OTP security register in the AT25DL081-SSHN-B?

The AT25DL081-SSHN-B includes a 128-byte One-Time Programmable (OTP) security register: 64 bytes are factory-preprogrammed (e.g., unique device ID), and 64 bytes are user-programmable once. It serves as a trusted location for Electronic Serial Numbers (ESN), cryptographic keys, or secure boot certificates. Programming is irreversible, and read access is unrestricted - making it ideal for root-of-trust initialization. The AT25DL081-SSHN-B guarantees OTP integrity across its full industrial temperature range.

Can the AT25DL081-SSHN-B suspend ongoing erase or program operations?

Yes, the AT25DL081-SSHN-B supports Program/Erase Suspend and Resume functions. When activated, it pauses long operations (e.g., 550 ms 64-kB block erase) to service time-critical host interrupts, then resumes from the exact point of suspension. This ensures deterministic real-time behavior in industrial PLCs or automotive ECUs. The AT25DL081-SSHN-B maintains internal state during suspend and requires no re-initialization upon resume.

AT25DL081-SSHN-B Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Active
Programmable:
Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
8Mbit
Memory Organization:
256 Bytes x 4096 pages
Memory Interface:
SPI
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
8µs, 3ms
Access Time:
-
Voltage - Supply:
1.65V ~ 1.95V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

AT25DL081-SSHN-B FAQ

1.How can I place an order for AT25DL081-SSHN-B through Aetrix?

Please submit a Request for Quotation (RFQ) for AT25DL081-SSHN-B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AT25DL081-SSHN-B reliable?

The price and inventory of AT25DL081-SSHN-B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25DL081-SSHN-B is usually 5 days.

3.What payment methods are accepted for AT25DL081-SSHN-B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25DL081-SSHN-B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AT25DL081-SSHN-B?

AT25DL081-SSHN-B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AT25DL081-SSHN-B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AT25DL081-SSHN-B?

For technical support, including AT25DL081-SSHN-B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25DL081-SSHN-B requirements.

6.How does Aetrix verify that AT25DL081-SSHN-B is sourced from the original manufacturer or authorized distributors?

All AT25DL081-SSHN-B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25DL081-SSHN-B meets industry standards.

7.What is the process for return or replacement of AT25DL081-SSHN-B?

All AT25DL081-SSHN-B units undergo pre-shipment inspection (PSI). If there is an issue with AT25DL081-SSHN-B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AT25DL081-SSHN-B part is unused and in its original packaging.

Return procedure for AT25DL081-SSHN-B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AT25DL081-SSHN-B Tags

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