Renesas AT25DN011-DWF
- Part No.:
- AT25DN011-DWF
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- Die
- Datasheet:
-
AT25DN011-DWF.pdf
- Description:
- 1 MBIT, WIDE VCC (1.7V TO 3.6V),
- Quantity:
- Payment:

- Shipping:

Inventory:3,237
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AT25DN011-DWF from Renesas Electronics is a 1-Mbit SPI serial flash memory IC supporting dual-output read, 104 MHz max clock frequency, 6 ns clock-to-output delay, and flexible erase architecture (256-byte page / 4-kByte & 32-kByte blocks). It operates from 2.3 V to 3.6 V and is used for code shadowing and embedded data storage in resource-constrained microcontroller systems.
For engineers reviewing the AT25DN011-DWF datasheet, AT25DN011-DWF pinout, AT25DN011-DWF application, or AT25DN011-DWF equivalent, key selection considerations include dual-read throughput, ultra-deep power-down current (350 nA), OTP security register support, industrial temperature range compliance, and SOIC-8 package compatibility with legacy PCB layouts.
Technical Context
The AT25DN011-DWF implements an SPI interface compliant with Modes 0 and 3, using rising-edge input latching and falling-edge output clocking. Its dual-output read mode repurposes the SI pin as I/O0 alongside SO (I/O1) to deliver two bits per SCK cycle at up to 50 MHz.
It features hardware write protection via the WP pin, HOLD pin for communication pause without deselection, and a dedicated 128-byte one-time programmable (OTP) security register for device serialization or ESN storage - all managed through discrete opcodes including 9Bh (program OTP) and 77h (read OTP).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 1 Mbit (131,072 bytes), sufficient for boot code + firmware + configuration data in compact MCU designs |
| Supply voltage | 2.3 V – 3.6 V single supply; eliminates need for charge pumps or auxiliary rails during program/erase |
| Max clock frequency | 104 MHz for standard read/program/erase; enables high-speed code execution from flash |
| Read latency | 6 ns clock-to-output (tV); supports tight timing margins in real-time embedded applications |
| Erase granularity | 256-byte page, 4-kByte block, 32-kByte block, and full-chip erase; minimizes wasted space in mixed code/data layouts |
| Power-down current | 350 nA ultra-deep power-down (typical); extends battery life in always-on IoT edge nodes |
| Endurance & retention | 100,000 program/erase cycles and 20-year data retention; suitable for field-upgradable firmware |
Pinout & Package
AT25DN011-DWF is packaged in an industry-standard 8-lead SOIC (150-mil) with gull-wing leads, compatible with automated assembly and legacy footprint designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; must transition high→low to initiate command and low→high to terminate operation |
| SCK | Serial Clock | Input clock controlling data transfer timing; rising edge latches input, falling edge clocks output |
| SI (I/O0) | Serial Input / Dual-Read Output | Primary data-in pin; becomes output (I/O0) during dual-output read to double throughput |
| SO (I/O1) | Serial Output / Dual-Read Output | Primary data-out pin; remains active output (I/O1) during dual-output read alongside SI |
| WP | Write Protect | Hardware lock control; low state enables sector protection independent of software commands |
| HOLD | Communication Pause | Active-low hold signal; suspends SPI transfer without resetting internal state or aborting ongoing erase/program |
| VCC | Power Supply | 2.3–3.6 V main supply; powers logic, memory array, and I/O buffers |
| GND | Ground Reference | System ground return path; required for stable operation and noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| Dual-output read mode | Uses SI and SO pins simultaneously to output two bits per SCK cycle, doubling effective read bandwidth vs. standard SPI |
| Flexible erase architecture | Supports 256-byte page erase for fine-grained data updates and 4/32-kByte block erase for efficient code region management |
| 128-byte OTP security register | Immutable storage for unique device identifiers, cryptographic keys, or calibration data - programmed once and locked permanently |
| Ultra-deep power-down | 350 nA typical current draw enables multi-year battery operation in maintenance-free sensor nodes |
| Hardware write protection | WP pin provides physical-level sector locking that persists across power cycles and overrides software commands |
Applications
| Wireless Sensor Node Firmware Storage | Industrial PLC Boot Memory |
|---|---|
Use Scenario: Storing firmware and OTA update images in battery-powered LoRaWAN or BLE sensors operating for >5 years on coin cells. IC Role / Device Role / Timing Role: Non-volatile code storage with fast read access and ultra-low standby current; dual-output read accelerates firmware validation pre-execution. Use Value: 350 nA ultra-deep power-down current extends battery life; 256-byte page erase enables atomic firmware patching without erasing full application image. | Use Scenario: Holding bootloader and safety-critical control logic in DIN-rail mounted programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: Primary boot memory mapped to MCU address space; industrial temperature rating (-40°C to +85°C) ensures reliability in uncontrolled cabinet environments. Use Value: Hardware WP pin prevents accidental overwrite during field servicing; 100,000-cycle endurance supports decades of firmware revisions. |
| Medical Wearable Configuration Storage | Automotive Infotainment UI Asset Cache |
Use Scenario: Storing calibrated sensor offsets, user preferences, and regulatory compliance logs in FDA-classified wearable health monitors. IC Role / Device Role / Timing Role: Secure, persistent data storage with OTP register for device-specific cryptographic keys and ESN binding. Use Value: 128-byte OTP register provides tamper-resistant identity anchoring; 20-year data retention meets medical device long-term archival requirements. | Use Scenario: Caching graphical assets (icons, fonts, animations) in automotive head units to reduce load time and offload main SoC memory bandwidth. IC Role / Device Role / Timing Role: High-speed serial flash acting as secondary cache memory; dual-output read delivers 100 MB/s effective throughput at 50 MHz SCK. Use Value: 104 MHz max clock and 6 ns tV enable near-parallel read performance; 32-kByte block erase efficiently refreshes UI asset groups. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q10EW | Same 1-Mbit density, SOIC-8 package, and 104 MHz speed; lacks dual-output read and OTP register | Lower-cost option where dual-read throughput and secure serialization are not required | Select when cost sensitivity outweighs need for enhanced read bandwidth or hardware-secured identity storage |
| Micron MT25QL01GBBB8E12-0SIT | 1-Gbit density (1000× larger), same SOIC-8 footprint; supports octal DTR mode but requires different command set and layout | Used in high-end infotainment or ADAS where large asset storage justifies redesign effort | Choose only if capacity demand exceeds 1 Mbit and system can accommodate updated driver stack and timing constraints |
Compared with W25Q10EW, AT25DN011-DWF adds dual-output read and OTP security at identical pinout and voltage; versus MT25QL01GBBB8E12-0SIT, it offers drop-in replacement capability for 1-Mbit use cases without layout or firmware changes.
Availability
AT25DN011-DWF is available at Aetrix Electronics and suitable for wireless sensor nodes, industrial PLCs, medical wearables, and automotive infotainment systems requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.
Supply support for AT25DN011-DWF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.
The AT25DN011-DWF belongs to Renesas' AT25DN family of SPI flash devices engineered for code+data co-storage in space- and power-constrained embedded systems, emphasizing flexibility, security, and industrial reliability.
FAQ
What is the maximum operating frequency supported by the AT25DN011-DWF for standard read operations?
The AT25DN011-DWF supports up to 104 MHz for standard read operations using the 03h opcode. This allows high-speed code shadowing into RAM while maintaining robust timing margins. The device also supports dual-output read at up to 50 MHz (3Bh opcode), delivering doubled data throughput per clock cycle. Both modes operate within the 2.3 V–3.6 V supply range without requiring external voltage scaling.
Does the AT25DN011-DWF support hardware write protection, and how is it implemented?
Yes, the AT25DN011-DWF implements hardware write protection via the dedicated WP (Write Protect) pin. When pulled low, the WP pin enables hardware-controlled locking of protected memory sectors, independent of software commands or status register settings. This feature persists across power cycles and provides physical-layer security against accidental or malicious overwrites - a critical capability for bootloader and calibration data integrity in the AT25DN011-DWF.
What erase granularities does the AT25DN011-DWF support, and why does this matter for embedded firmware design?
The AT25DN011-DWF supports four erase granularities: 256-byte page, 4-kByte block, 32-kByte block, and full-chip erase. This flexibility allows firmware architects to isolate code modules and data segments into independently erasable regions - minimizing wasted space and enabling atomic updates. For example, a 256-byte page erase permits safe patching of configuration parameters without disturbing adjacent application code, directly improving field-upgrade safety and memory utilization efficiency in the AT25DN011-DWF.
How does the dual-output read mode function on the AT25DN011-DWF, and which pins are involved?
The dual-output read mode on the AT25DN011-DWF uses both the SI (I/O0) and SO (I/O1) pins as simultaneous outputs during the 3Bh command sequence, clocking two bits per SCK falling edge. This doubles effective read bandwidth compared to standard single-output mode. Pin functionality dynamically reassigns SI from input to output only during dual-read execution - preserving SPI compatibility while delivering higher throughput. The feature is fully supported in the AT25DN011-DWF's SOIC-8 package without requiring additional routing or components.
What is the purpose and capacity of the OTP security register in the AT25DN011-DWF?
The AT25DN011-DWF includes a 128-byte One-Time Programmable (OTP) security register designed for permanent, irreversible storage of device-unique identifiers, electronic serial numbers (ESN), cryptographic keys, or calibration constants. Once programmed using the 9Bh opcode, contents cannot be altered or erased. This register provides hardware-rooted trust anchors for secure boot, anti-counterfeiting, and regulatory compliance - a differentiated capability not found in baseline SPI flash devices and integral to the AT25DN011-DWF's value proposition.
AT25DN011-DWF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR (SLC)
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- SPI - Dual I/O
- Clock Frequency:
- 104 MHz
- Write Cycle Time - Word, Page:
- 8µs, 1.75ms
- Access Time:
- 6 ns
- Voltage - Supply:
- 2.3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Wafer
AT25DN011-DWF FAQ
1.How can I place an order for AT25DN011-DWF through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25DN011-DWF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25DN011-DWF reliable?
The price and inventory of AT25DN011-DWF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25DN011-DWF is usually 5 days.
3.What payment methods are accepted for AT25DN011-DWF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25DN011-DWF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25DN011-DWF?
AT25DN011-DWF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25DN011-DWF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25DN011-DWF?
For technical support, including AT25DN011-DWF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25DN011-DWF requirements.
6.How does Aetrix verify that AT25DN011-DWF is sourced from the original manufacturer or authorized distributors?
All AT25DN011-DWF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25DN011-DWF meets industry standards.
7.What is the process for return or replacement of AT25DN011-DWF?
All AT25DN011-DWF units undergo pre-shipment inspection (PSI). If there is an issue with AT25DN011-DWF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25DN011-DWF part is unused and in its original packaging.
Return procedure for AT25DN011-DWF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AT25DN011-DWF Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

