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Renesas AT25DN011-MAHF-T

Part No.:
AT25DN011-MAHF-T
Manufacturer:
Renesas
Category:
Memory
Package:
8-UFDFN Exposed Pad
Datasheet:
AetrixAT25DN011-MAHF-T.pdf
Description:
IC FLASH 1MBIT SPI 104MHZ 8UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,456

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Product details

Overview

AT25DN011-MAHF-T from Renesas Electronics is a 1-Mbit SPI serial flash memory IC designed for code shadowing and embedded data storage in resource-constrained systems. It operates from 2.3 V to 3.6 V, supports SPI Modes 0/3 and Dual-Output Read, delivers 104 MHz max clock frequency, and achieves 6 ns clock-to-output timing - enabling fast boot and firmware update in industrial controllers and IoT edge nodes.

For engineers reviewing the AT25DN011-MAHF-T datasheet, AT25DN011-MAHF-T pinout, AT25DN011-MAHF-T application, or AT25DN011-MAHF-T equivalent, key selection criteria include dual-output read throughput, ultra-deep power-down current (350 nA), flexible erase granularity (256-byte page / 4-kB & 32-kB blocks), OTP security register, and industrial temperature support (–40°C to +85°C).

Technical Context

The AT25DN011-MAHF-T implements a dedicated SPI interface with hardware-controlled write protection via WP pin and suspend/resume capability via HOLD pin. Its command set includes standardized opcodes (e.g., 03h/0Bh for standard/dual-read, 02h for page program, 20h/52h for 4-kB/32-kB block erase) compliant with JEDEC ID reading (9Fh) and legacy compatibility (15h).

Internally, it features a segmented memory architecture with uniform 4-kB and 32-kB erase blocks plus 256-byte programmable pages, enabling efficient co-location of code modules and data segments without cross-contamination. The integrated 128-byte OTP security register supports device serialization and ESN storage independent of main array operations.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density1 Mbit (128 KBytes) - sufficient for bootloader, firmware image, and configuration data in compact MCU-based designs.
Supply Voltage2.3 V – 3.6 V - enables direct interfacing with 2.5 V and 3.3 V logic domains without level-shifting.
Max Clock Frequency104 MHz - supports high-speed read access for real-time code execution and rapid firmware updates.
Read Latency6 ns clock-to-output (tV) - minimizes wait states during instruction fetch and improves system responsiveness.
Erase Granularity256-byte page / 4-kB block / 32-kB block / full chip - allows precise in-field firmware patching and dynamic data logging without erasing unrelated sectors.
Power-Down Current350 nA ultra-deep power-down (typical) - extends battery life in always-on sensor nodes and wearable devices.
Endurance & Retention100,000 program/erase cycles / 20 years data retention - meets long-life requirements for industrial and automotive control applications.

Pinout & Package

AT25DN011-MAHF-T is packaged in an 8-lead SOIC (150-mil) with industry-standard pinout compatible with JEDEC MS-012. All pins are electrically validated per datasheet Rev. K.

Pin/TerminalCircuit RoleDesign Meaning
CSChip SelectActive-low enable signal; must transition low-to-high to terminate self-timed operations like erase or program.
SCKSerial ClockInput clock controlling data latching (rising edge) and output timing (falling edge); supports up to 104 MHz.
SI (I/O0)Serial Input / Dual-Read OutputPrimary command/address/data input; becomes I/O0 output during Dual-Output Read (3Bh) for concurrent 2-bit transfer.
SO (I/O1)Serial Output / Dual-Read OutputStandard data output; remains active as I/O1 during Dual-Output Read to deliver second bit per SCK cycle.
WPWrite ProtectHardware lock control for protected sectors; low-active; internally pulled high; optional external tie to VCC.
HOLDCommunication SuspendPauses ongoing SPI transfers without deselecting device or resetting internal state; low-active; internally pulled high.
VCCPower SupplySingle 2.3–3.6 V supply; powers all internal logic and memory array; no auxiliary voltage required.
GNDGround ReferenceSystem ground return path; must be low-impedance connection for stable read/write margins and noise immunity.

Key Features

FeatureDesign Value
Dual-Output Read (3Bh)Enables 2-bit-per-clock-cycle data transfer using SI+SO outputs, doubling effective read bandwidth over standard SPI Read (0Bh) at same clock rate.
Flexible Erase ArchitectureSupports 256-byte page, 4-kB block, 32-kB block, and full-chip erase - eliminates need for external EEPROM or FRAM in mixed code+data applications.
128-byte OTP Security RegisterOne-time programmable space for immutable device identifiers, cryptographic keys, or calibration data - isolated from main array and immune to accidental overwrite.
Ultra-Deep Power-Down ModeReduces current to 350 nA typical while preserving memory contents - ideal for battery-backed systems requiring multi-year shelf life or infrequent wake-up.
Hardware Write ProtectionWP pin provides physical sector locking independent of software status register settings - prevents corruption during brown-out or firmware faults.

Applications

Industrial PLC Firmware StorageIoT Edge Node Configuration

Use Scenario: Storing and updating ladder logic firmware in programmable logic controllers with field-replaceable SD cards or USB sticks.

IC Role / Device Role / Timing Role: Non-volatile code storage with fast read access and in-system reprogrammability via SPI interface.

Use Value: Enables secure, low-power firmware upgrades without full system reset; 4-kB block erase allows patch-level updates without disrupting operational code sections.

Use Scenario: Persisting sensor calibration parameters, network credentials, and device-specific identifiers in battery-powered environmental monitors.

IC Role / Device Role / Timing Role: Data storage element supporting frequent small writes and long-term retention under intermittent power.

Use Value: 256-byte page erase minimizes wear on frequently updated fields; OTP register stores immutable ESN for cloud authentication.

Medical Wearable BootloaderAutomotive Body Control Module

Use Scenario: Hosting secure bootloader code that validates signed firmware images before loading into RAM on ARM Cortex-M microcontrollers.

IC Role / Device Role / Timing Role: Trusted code repository with hardware write protection and fast read latency for deterministic boot timing.

Use Value: 6 ns tV ensures minimal boot delay; WP pin prevents unauthorized modification during manufacturing or service.

Use Scenario: Storing vehicle-specific configuration data (e.g., door lock behavior, mirror position presets) in body control units operating across extended temperature ranges.

IC Role / Device Role / Timing Role: Industrial-grade non-volatile memory qualified for –40°C to +85°C operation with guaranteed 20-year data retention.

Use Value: Full industrial temp range compliance and 100K endurance ensure reliability over 15+ year vehicle lifecycle without data loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial flash memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Winbond W25Q10EW1-Mbit density, 1.65–3.6 V supply, 133 MHz max clock, no dual-output read mode, 1.5 µA deep power-down (vs. 7.5 µA).Lacks dual-output read; higher speed but less optimized for low-power data logging due to absence of ultra-deep power-down (350 nA).Select when maximum read throughput is prioritized over ultra-low standby current and dual-read capability is unnecessary.
Micron MT25QL01GBBB8E12-0SIT1-Gbit density (1000× larger), quad-SPI interface, 133 MHz, 2.7–3.6 V only, no 2.3 V support, no OTP register.Not drop-in compatible due to density, voltage range, and interface differences; requires PCB redesign and firmware adaptation.Choose only for future-proofing high-capacity needs; not suitable as direct replacement for AT25DN011-MAHF-T in existing 1-Mbit designs.

Compared with W25Q10EW and MT25QL01GBBB8E12-0SIT, the AT25DN011-MAHF-T uniquely balances ultra-low power (350 nA), dual-output read acceleration, 2.3 V minimum operation, and integrated OTP security - making it optimal for compact, battery-sensitive, and security-aware embedded systems where density and quad-SPI are secondary.

Availability

AT25DN011-MAHF-T is available at Aetrix Electronics and suitable for industrial PLC firmware storage, IoT edge node configuration, medical wearable bootloaders, and automotive body control modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for AT25DN011-MAHF-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The AT25DN011-MAHF-T belongs to Renesas' AT25DN family of serial flash memories engineered specifically for cost-sensitive, low-power embedded systems needing reliable code and data storage with enhanced security and flexible erase capabilities.

FAQ

What is the maximum SPI clock frequency supported by the AT25DN011-MAHF-T?

The AT25DN011-MAHF-T supports a maximum SPI clock frequency of 104 MHz for most commands including Read Array (0Bh), Dual-Output Read (3Bh), Page Erase (81h), and Block Erase (20h/52h). This enables high-throughput data access and rapid firmware updates in time-critical embedded applications.

Does the AT25DN011-MAHF-T support dual-output read mode, and how does it improve performance?

Yes, the AT25DN011-MAHF-T supports Dual-Output Read using opcode 3Bh, where both SI and SO pins act as outputs to transfer two bits per SCK cycle. This doubles effective read bandwidth compared to standard single-output read (0Bh), reducing firmware load time and improving system responsiveness without increasing clock frequency.

What erase options are available on the AT25DN011-MAHF-T, and why does granularity matter?

The AT25DN011-MAHF-T offers four erase options: 256-byte page, 4-kB block, 32-kB block, and full chip. Granular erase prevents unnecessary wear on unrelated memory regions - for example, updating a 128-byte configuration parameter via page erase avoids erasing adjacent firmware code stored in the same 4-kB block.

How does the 128-byte OTP security register in the AT25DN011-MAHF-T enhance system security?

The 128-byte OTP security register in the AT25DN011-MAHF-T provides one-time programmable space for immutable data such as device serial numbers, cryptographic keys, or calibration constants. Once written, contents cannot be altered - preventing tampering during manufacturing, field deployment, or service, and ensuring trusted identity in secure boot chains.

What is the ultra-deep power-down current of the AT25DN011-MAHF-T, and in which applications is it critical?

The AT25DN011-MAHF-T draws only 350 nA (typical) in ultra-deep power-down mode, making it critical for battery-powered applications with multi-year operational life or infrequent wake-up cycles - such as wireless sensor nodes, smart meters, and medical wearables where every nanoamp impacts total system runtime.

AT25DN011-MAHF-T Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-UFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
SPI
Clock Frequency:
104 MHz
Write Cycle Time - Word, Page:
8µs, 1.75ms
Access Time:
-
Voltage - Supply:
2.3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-UDFN (2x3)

AT25DN011-MAHF-T FAQ

1.How can I place an order for AT25DN011-MAHF-T through Aetrix?

Please submit a Request for Quotation (RFQ) for AT25DN011-MAHF-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AT25DN011-MAHF-T reliable?

The price and inventory of AT25DN011-MAHF-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25DN011-MAHF-T is usually 5 days.

3.What payment methods are accepted for AT25DN011-MAHF-T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25DN011-MAHF-T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AT25DN011-MAHF-T?

AT25DN011-MAHF-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AT25DN011-MAHF-T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AT25DN011-MAHF-T?

For technical support, including AT25DN011-MAHF-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25DN011-MAHF-T requirements.

6.How does Aetrix verify that AT25DN011-MAHF-T is sourced from the original manufacturer or authorized distributors?

All AT25DN011-MAHF-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25DN011-MAHF-T meets industry standards.

7.What is the process for return or replacement of AT25DN011-MAHF-T?

All AT25DN011-MAHF-T units undergo pre-shipment inspection (PSI). If there is an issue with AT25DN011-MAHF-T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AT25DN011-MAHF-T part is unused and in its original packaging.

Return procedure for AT25DN011-MAHF-T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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