Renesas AT25DN011-MAHF-Y

Overview

AT25DN011-MAHF-Y from Renesas Electronics is a 1-Mbit SPI serial flash memory IC designed for code shadowing and data storage in embedded systems. It operates from 2.3 V to 3.6 V, supports SPI Modes 0/3 and Dual-Output Read, delivers 104 MHz max clock frequency, and achieves 6 ns clock-to-output timing. It is used in resource-constrained IoT edge nodes requiring fast, low-power nonvolatile storage with flexible erase granularity.

For engineers reviewing the AT25DN011-MAHF-Y datasheet, AT25DN011-MAHF-Y pinout, AT25DN011-MAHF-Y application, or AT25DN011-MAHF-Y equivalent, key selection criteria include dual-output read throughput, 256-byte page erase capability, ultra-deep power-down current (350 nA), OTP security register support, and industrial temperature compliance (–40°C to +85°C).

Technical Context

The AT25DN011-MAHF-Y implements a dedicated SPI interface with hardware-controlled write protection via WP pin and suspend/resume capability via HOLD pin. Its command set includes dedicated opcodes for Dual-Output Read (3Bh), Page Erase (81h), and Ultra-Deep Power-Down (79h), all operating up to 104 MHz.

Memory architecture features three-tiered erase: 256-byte pages, uniform 4-kByte blocks, and 32-kByte blocks - enabling efficient co-location of code modules and data segments without wasted space. The integrated 128-byte OTP security register supports device serialization and ESN storage with one-time programmability.

Key Specifications

Pinout & Package

AT25DN011-MAHF-Y is packaged in an 8-lead SOIC (150-mil) with standard JEDEC footprint. Pin functions are fully SPI-compliant and support hardware write protection and communication hold.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial flash memory applications.

Compared with W25Q80DVSSIG and MT25QL01GBBB8E12-0SIT, the AT25DN011-MAHF-Y uniquely balances minimal footprint, ultra-low power (350 nA), Dual-Output Read throughput, and integrated OTP security - making it optimal for space- and energy-constrained embedded designs where 1 Mbit suffices.

Availability

AT25DN011-MAHF-Y is available at Aetrix Electronics and suitable for industrial PLC firmware storage, IoT edge sensor node logging, medical wearable boot memory, and automotive body control module code storage requiring stable component supply across extended production lifecycles.

Supply support for AT25DN011-MAHF-Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The AT25DN011-MAHF-Y belongs to Renesas' AT25DN family of SPI flash devices engineered for cost-sensitive, low-power embedded systems requiring flexible erase, hardware security, and industrial-grade reliability.

FAQ

What is the maximum operating frequency of the AT25DN011-MAHF-Y?

The AT25DN011-MAHF-Y supports a maximum clock frequency of 104 MHz for most commands including Page Erase, Block Erase, and Byte/Page Program. Dual-Output Read operates up to 50 MHz, while standard Read Array is rated to 33 MHz. These values are specified under DC and AC operating conditions across the full industrial temperature range (–40°C to +85°C), and the AT25DN011-MAHF-Y maintains timing compliance without external acceleration circuits.

Does the AT25DN011-MAHF-Y support hardware write protection?

Yes, the AT25DN011-MAHF-Y includes hardware write protection controlled by the active-low WP pin. When asserted, it locks status register bits and protected memory sectors, preventing accidental or malicious writes. The WP pin is internally pulled high and can be left floating if unused, though Renesas recommends connecting it to VCC for robustness. This feature operates independently of software commands and remains effective during power transitions.

What erase options does the AT25DN011-MAHF-Y provide?

The AT25DN011-MAHF-Y offers four erase granularities: 256-byte page erase (81h), 4-kByte block erase (20h), 32-kByte block erase (52h), and full chip erase (60h/C7h). This tiered architecture allows precise updates-e.g., modifying a single configuration parameter without disturbing adjacent firmware code. Each erase operation is self-timed and automatically verified, with typical times of 1.25 ms (page), 35 ms (4-kB), and 250 ms (32-kB).

How does the Dual-Output Read mode work on the AT25DN011-MAHF-Y?

The AT25DN011-MAHF-Y implements Dual-Output Read using the SI and SO pins concurrently as data outputs (I/O0 and I/O1) during the 3Bh command. Two bits are clocked out per SCK falling edge, effectively doubling read throughput versus standard SPI Read Array (03h/0Bh). This mode requires no additional pins and maintains full backward compatibility with existing SPI master drivers when disabled.

Is the AT25DN011-MAHF-Y suitable for battery-powered applications?

Yes, the AT25DN011-MAHF-Y is optimized for ultra-low-power operation: it draws just 350 nA in Ultra-Deep Power-Down mode and 7.5 µA in Deep Power-Down mode. Active read current is 6 mA typical at 104 MHz. Combined with fast wake-up and hardware HOLD functionality, the AT25DN011-MAHF-Y enables multi-year battery life in intermittent-sampling applications such as wireless sensors and wearables.