Renesas AT25DN011-SSHF-B

Overview

AT25DN011-SSHF-B from Renesas Electronics is a 1-Mbit SPI serial Flash memory IC designed for code shadowing and data storage in embedded systems. It operates from 2.3 V to 3.6 V, supports SPI Modes 0/3 and Dual-Output Read, delivers 104 MHz max clock frequency, and achieves 6 ns clock-to-output timing. It is used in IoT edge nodes for firmware storage with hardware write protection.

For engineers reviewing the AT25DN011-SSHF-B datasheet, AT25DN011-SSHF-B pinout, AT25DN011-SSHF-B application, or AT25DN011-SSHF-B equivalent, key selection criteria include dual-output read throughput, ultra-deep power-down current (350 nA), flexible erase granularity (256-byte page / 4-kB block), OTP security register, and industrial temperature support.

Technical Context

The AT25DN011-SSHF-B implements a SPI-compatible serial interface with dual I/O capability: during Dual-Output Read (0x3B command), both SI and SO pins function as data outputs, enabling two bits per SCK falling edge. Its internal architecture includes dedicated address latches, decode logic, and SRAM-based data buffers for fast program/erase execution.

It features hierarchical erase control-page (256 B), uniform 4-kB block, uniform 32-kB block, and full-chip-with hardware write protection via the WP pin and software-controlled status register locking. The 128-byte OTP security register supports device serialization and ESN storage without requiring external security elements.

Key Specifications

Pinout & Package

AT25DN011-SSHF-B is packaged in an 8-lead SOIC (150-mil) with standard JEDEC footprint and pinout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Compared with W25Q80DVSSIG and MX25L1006EM1I-12G, the AT25DN011-SSHF-B uniquely combines 1-Mbit density with 350 nA ultra-deep power-down, Dual-Output Read for bandwidth-critical boot paths, and factory-programmable OTP for device identity - making it optimal for compact, secure, battery-operated edge devices.

Availability

AT25DN011-SSHF-B is available at Aetrix Electronics and suitable for wireless sensor nodes, industrial PLCs, and medical wearables requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for AT25DN011-SSHF-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The AT25DN011-SSHF-B belongs to Renesas' serial Flash memory product line, engineered specifically for low-power, secure, and flexible code+data storage in space-constrained embedded systems.

FAQ

What is the maximum operating frequency supported by the AT25DN011-SSHF-B?

The AT25DN011-SSHF-B supports a maximum operating frequency of 104 MHz for all commands including Read Array, Dual-Output Read, Page Program, and Block Erase. This high clock rate enables rapid firmware loading and configuration retrieval in time-sensitive applications. The device maintains timing integrity across its full industrial temperature range (-40°C to +85°C), and the 6 ns clock-to-output (tV) specification ensures predictable signal timing in high-speed PCB layouts. AT25DN011-SSHF-B achieves this performance while remaining compatible with standard SPI master peripherals.

Does the AT25DN011-SSHF-B support Dual-Output Read, and how does it improve system performance?

Yes, the AT25DN011-SSHF-B supports Dual-Output Read using the 0x3B opcode, where both SI and SO pins act as data outputs, delivering two bits per SCK falling edge. This doubles effective read throughput compared to standard SPI Read (0x03), reducing firmware validation time and accelerating boot sequences. The feature operates up to 50 MHz and requires no additional pins or external components. AT25DN011-SSHF-B maintains full backward compatibility with legacy SPI masters while enabling bandwidth gains in new designs.

What erase options are available on the AT25DN011-SSHF-B, and why is flexible granularity important?

The AT25DN011-SSHF-B offers four erase options: 256-byte page, 4-kB block, 32-kB block, and full-chip. This flexibility minimizes wasted memory space - for example, updating a 300-byte configuration table requires only one page erase instead of a full 4-kB block. It also isolates code and data regions, preventing accidental erasure of firmware during parameter updates. AT25DN011-SSHF-B's architecture eliminates the need for external EEPROM or FRAM in mixed-code-and-data applications, simplifying BOM and layout.

How does the 128-byte OTP security register in the AT25DN011-SSHF-B enhance device security?

The 128-byte One-Time Programmable (OTP) security register in the AT25DN011-SSHF-B provides immutable storage for device-unique identifiers, cryptographic keys, calibration constants, or electronic serial numbers (ESN). Once programmed, contents cannot be altered - ensuring authenticity and preventing cloning or tampering. This eliminates reliance on external secure elements and reduces bill-of-materials complexity. AT25DN011-SSHF-B supports OTP programming via the 0x9B command, with built-in verification to guarantee write integrity.

What power-saving modes does the AT25DN011-SSHF-B offer, and what are their typical current draws?

The AT25DN011-SSHF-B offers three low-power states: Standby (25 µA typical), Deep Power-Down (7.5 µA typical), and Ultra-Deep Power-Down (350 nA typical). Ultra-Deep mode is entered via the 0x79 command and exited with 0xAB, enabling multi-year battery life in always-on sensors. All modes retain memory contents without external backup. AT25DN011-SSHF-B maintains full functionality across its industrial temperature range, making it ideal for remote, unattended deployments where energy harvesting or battery replacement is impractical.