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Renesas AT25DN256-MAHF-Y
- Part No.:
- AT25DN256-MAHF-Y
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-UFDFN Exposed Pad
- Datasheet:
-
AT25DN256-MAHF-Y.pdf
- Description:
- IC FLASH 256KBIT SPI 8UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,874
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Product details
Overview
AT25DN256-MAHF-Y from Adesto Technologies is a 256-Kbit serial SPI Flash memory IC optimized for code shadowing and mixed code/data storage in embedded systems. It operates from 2.3V–3.6V, supports SPI Modes 0/3 and Dual-Output Read up to 50MHz, delivers 6ns clock-to-output timing, and features flexible erase granularity (256-byte page, 4KB/32KB blocks, full chip).
For engineers reviewing the AT25DN256-MAHF-Y datasheet, AT25DN256-MAHF-Y pinout, AT25DN256-MAHF-Y application, or AT25DN256-MAHF-Y equivalent, key selection considerations include its dual-output read throughput, hardware write protection via WP pin, 128-byte OTP security register with factory-unique ID, ultra-deep power-down current (350nA), and industrial temperature range support.
Technical Context
The AT25DN256-MAHF-Y implements a dedicated SPI interface with four signal lines (CS, SCK, SI/I/O0, SO/I/O1) and supports both standard and dual-output read modes-enabling two bits per clock cycle during Dual-Output Read (3Bh opcode). Its internal address counter auto-increments during sequential reads, and it uses MSB-first data transfer for all opcodes, addresses, and payload bytes.
Command execution requires CS assertion followed by an 8-bit opcode; valid operations include Read Array (03h/0Bh), Dual-Output Read (3Bh), Byte/Page Program (02h), Page Erase (81h), Block Erase (20h/52h/D8h), Chip Erase (60h/C7h), and OTP programming (9Bh). All program/erase cycles are internally self-timed and report completion status via the Status Register's RDY/BUSY bit and EPE flag on failure.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 256 Kbit (32 KB) organized as 128 pages × 256 bytes; enables compact firmware storage without external RAM expansion. |
| Supply Voltage | 2.3V–3.6V single supply; eliminates need for charge pumps or auxiliary voltage rails in battery-powered or low-voltage MCU designs. |
| Max Clock Frequency | 104 MHz for most commands; allows high-speed configuration loading and firmware updates in time-critical boot sequences. |
| Read Throughput | Up to 100 MB/s effective with Dual-Output Read (50 MHz × 2 bits/cycle); doubles data rate vs. standard SPI read for streaming applications. |
| Erase Granularity | 256-byte page, 4KB block, 32KB block, and full-chip erase; minimizes wasted space when updating partial firmware images or logging data segments. |
| Endurance & Retention | 100,000 program/erase cycles and 20-year data retention; suitable for field-upgradable devices requiring long-term reliability. |
| Power Consumption | 350 nA ultra-deep power-down current; extends battery life in always-on IoT edge nodes during extended sleep intervals. |
Pinout & Package
AT25DN256-MAHF-Y is packaged in an 8-lead SOIC (150-mil) with industry-standard pinout and RoHS-compliant lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select input | Active-low enable signal; must transition high→low to initiate any command and low→high to terminate; controls SO/SI tri-state behavior. |
| SCK | Serial clock input | Controls data sampling: SI latched on rising edge; SO/I/O1 output on falling edge; defines maximum interface speed (up to 104 MHz). |
| SI / I/O0 | Serial input / Dual-Read output | Primary data-in path; becomes bidirectional I/O0 during Dual-Output Read to deliver LSB-aligned data bits alongside SO. |
| SO / I/O1 | Serial output / Dual-Read output | Primary data-out path; remains active I/O1 during Dual-Output Read to deliver MSB-aligned data bits alongside SI. |
| WP | Hardware write protect input | Low-active pin enabling sector-level hardware locking; internally pulled high; connects to VCC if unused to prevent accidental writes. |
| HOLD | Communication pause input | Low-active pin suspends ongoing SPI transfers without deselecting device or resetting internal state; requires CS asserted and SCK low to activate. |
| VCC | Power supply | 2.3V–3.6V main supply; powers core logic, memory array, and I/O buffers; no separate programming voltage required. |
| GND | Ground reference | System ground return path; must be low-impedance and co-located with MCU ground for noise immunity in high-speed SPI operation. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-Output Read mode | Enables 2-bit-per-cycle data transfer using SI and SO simultaneously, doubling effective read bandwidth over standard SPI at same clock frequency. |
| Flexible erase architecture | Supports 256-byte page, 4KB/32KB uniform blocks, and full-chip erase-reducing memory fragmentation in mixed code-and-data applications. |
| 128-byte OTP Security Register | Contains 64 bytes of factory-programmed unique device ID and 64 bytes user-programmable for ESN, keys, or calibration data-immutable after programming. |
| Hardware write protection | WP pin provides physical lock for protected sectors independent of software status register settings-critical for bootloader integrity. |
| Ultra-low deep power-down | 350 nA typical current draw in Ultra Deep Power-Down mode (79h command) enables multi-year battery operation in maintenance-free sensor nodes. |
Applications
| Secure Firmware Storage | Industrial Data Logging |
|---|---|
Use Scenario: Storing signed bootloader and application firmware in resource-constrained microcontrollers where code is shadowed into RAM at boot. IC Role / Device Role / Timing Role: Nonvolatile code storage with hardware write protection (WP pin) and OTP-based secure key binding to prevent unauthorized firmware modification. Use Value: Prevents field reprogramming of critical boot code while enabling authenticated firmware updates via encrypted OTA mechanisms tied to the factory-unique ID. | Use Scenario: Recording sensor readings, event timestamps, and diagnostic logs in programmable logic controllers operating across –40°C to +85°C ambient. IC Role / Device Role / Timing Role: Persistent data buffer supporting frequent small writes (256-byte pages) and infrequent bulk erases (4KB blocks) to extend endurance beyond 100k cycles. Use Value: Eliminates need for external EEPROM or FRAM by combining fast random-access reads, low-power deep-sleep modes, and industrial-grade data retention. |
| IoT Edge Node Configuration | Consumer Electronics Parameter Storage |
Use Scenario: Holding network credentials, calibration coefficients, and device-specific settings in battery-powered smart meters and environmental monitors. IC Role / Device Role / Timing Role: Low-power configuration store leveraging Ultra Deep Power-Down (350nA) between wake cycles and Dual-Output Read for rapid parameter fetch during active periods. Use Value: Extends coin-cell battery life to >5 years while maintaining sub-10ms parameter access latency during sensor sampling bursts. | Use Scenario: Saving user preferences, display brightness levels, and audio equalizer presets in portable media players and wireless earbuds. IC Role / Device Role / Timing Role: High-reliability parameter memory with 20-year data retention and 100k-cycle endurance-guaranteeing settings persist through product lifetime. Use Value: Avoids customer complaints about lost settings after battery replacement or firmware upgrades due to robust OTP-backed backup storage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q256JWEIQ | 3V-only supply (2.7–3.6V); Quad SPI support (QPI); no Dual-Output Read; 133 MHz max clock; 4KB/64KB/256KB erase blocks. | Better suited for high-bandwidth graphics or firmware caching where quad-line parallelism outweighs dual-output simplicity. | Select when system already uses QPI interface and requires larger erase blocks for bulk firmware updates. |
| Macronix MX25L25635F | 2.7–3.6V supply; standard SPI only; no Dual-Output Read; 104 MHz max clock; 4KB/32KB/64KB erase blocks; no OTP register. | Lacks hardware write protection pin and unique ID-requires software-managed security and external ID storage. | Choose for cost-sensitive designs where OTP and WP functionality are not required and existing layout supports SOIC-8 footprint. |
Compared with W25Q256JWEIQ and MX25L25635F, the AT25DN256-MAHF-Y uniquely balances dual-output throughput, ultra-low deep-sleep current, integrated hardware write protection, and factory-programmed unique ID-all in a 2.3V–3.6V supply range ideal for energy-harvesting and battery-operated systems.
Availability
AT25DN256-MAHF-Y is available at Aetrix Electronics and suitable for industrial control systems, IoT edge sensors, and consumer electronics requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for AT25DN256-MAHF-Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Adesto Technologies (acquired by Dialog Semiconductor, now part of Renesas Electronics) specialized in low-power, nonvolatile memory and IoT connectivity solutions before integration into Renesas' broad analog and embedded portfolio.
The AT25DN256-MAHF-Y belongs to Adesto's DataFlash® family, designed specifically for energy-efficient embedded applications demanding fast read access, flexible erase granularity, and integrated security features like OTP and hardware write protection.
FAQ
What is the maximum clock frequency supported by AT25DN256-MAHF-Y for Dual-Output Read operations?
The AT25DN256-MAHF-Y supports Dual-Output Read (opcode 3Bh) at up to 50 MHz, delivering two bits per clock cycle for effective throughput of 100 Mbps. This is lower than its 104 MHz maximum for standard read or program commands, reflecting timing constraints specific to dual-pin output synchronization. The 50 MHz limit ensures reliable setup/hold margins for both SO and SI outputs during high-speed dual-bit transfers.
Does AT25DN256-MAHF-Y require a separate programming voltage for write or erase operations?
No, the AT25DN256-MAHF-Y performs all program and erase operations using only its main VCC supply (2.3V–3.6V), with no auxiliary or boosted voltage required. Internal charge pumps generate necessary high-voltage transients for memory cell manipulation, simplifying power design and reducing bill-of-materials count in space-constrained PCB layouts.
How is the 128-byte OTP Security Register structured in AT25DN256-MAHF-Y?
The AT25DN256-MAHF-Y's 128-byte OTP Security Register consists of two 64-byte sections: the first 64 bytes are factory-programmed with a globally unique device identifier (ESN), and the second 64 bytes are user-programmable once for secure keys, calibration data, or licensing tokens. Both sections are permanently locked after programming and cannot be erased or rewritten.
Can AT25DN256-MAHF-Y operate across the full industrial temperature range?
Yes, the AT25DN256-MAHF-Y is specified to operate reliably from –40°C to +85°C ambient temperature, meeting full industrial grade requirements. All key parameters-including read timing (tV = 6 ns), program/erase times, and power consumption-are guaranteed across this range, making it suitable for deployment in harsh environments such as factory automation and outdoor infrastructure.
What package type is used for the AT25DN256-MAHF-Y variant?
The AT25DN256-MAHF-Y uses an 8-lead SOIC (150-mil) package with standard gull-wing leads, RoHS-compliant finish, and JEDEC MS-012AC footprint. This package is compatible with automated SMT assembly, reflow soldering profiles, and legacy board designs requiring proven reliability and thermal performance in commercial and industrial applications.
AT25DN256-MAHF-Y Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-UFDFN Exposed Pad
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 104 MHz
- Write Cycle Time - Word, Page:
- 8µs, 1.75ms
- Access Time:
- -
- Voltage - Supply:
- 2.3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-UDFN (2x3)
AT25DN256-MAHF-Y FAQ
1.How can I place an order for AT25DN256-MAHF-Y through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25DN256-MAHF-Y on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25DN256-MAHF-Y reliable?
The price and inventory of AT25DN256-MAHF-Y are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25DN256-MAHF-Y is usually 5 days.
3.What payment methods are accepted for AT25DN256-MAHF-Y?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25DN256-MAHF-Y transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25DN256-MAHF-Y?
AT25DN256-MAHF-Y orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25DN256-MAHF-Y order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25DN256-MAHF-Y?
For technical support, including AT25DN256-MAHF-Y datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25DN256-MAHF-Y requirements.
6.How does Aetrix verify that AT25DN256-MAHF-Y is sourced from the original manufacturer or authorized distributors?
All AT25DN256-MAHF-Y products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25DN256-MAHF-Y meets industry standards.
7.What is the process for return or replacement of AT25DN256-MAHF-Y?
All AT25DN256-MAHF-Y units undergo pre-shipment inspection (PSI). If there is an issue with AT25DN256-MAHF-Y, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25DN256-MAHF-Y part is unused and in its original packaging.
Return procedure for AT25DN256-MAHF-Y:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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