Renesas AT25EU0041A-MAHN-T

Overview

AT25EU0041A-MAHN-T from Renesas Electronics is a 4-Mbit ultra-low-energy serial flash memory IC designed for SPI-based embedded storage in battery-constrained edge IoT and wearable systems. It operates across 1.65 V–3.6 V, supports 108 MHz max clock frequency, delivers 1.1 mA typical active read current, and features quad-SPI (1,1,4)/(1,4,4) and dual-SPI (1,1,2)/(1,2,2) modes for high-speed code execution (XiP) and firmware updates.

For engineers reviewing the AT25EU0041A-MAHN-T datasheet, AT25EU0041A-MAHN-T pinout, AT25EU0041A-MAHN-T application, or AT25EU0041A-MAHN-T equivalent, key selection criteria include its 2×3×0.6 mm DFN package, 256-byte page erase capability, 10k program/erase cycles, Deep Power-Down (100 nA), and flexible block architecture (4/32/64 kB) enabling efficient OTA updates and small-data logging.

Technical Context

The AT25EU0041A-MAHN-T implements a quad-SPI interface requiring Status Register 2's QE bit to be set for IO2/IO3 functionality on WP/HOLD pins, supporting 4-line bidirectional data transfer at up to 108 MHz. Its command set includes suspend/resume for program/erase operations and configurable security registers with OTP lock.

It uses a flexible erase architecture with constant-time page (256 B), block (4/32/64 kB), and chip erase - all with 8 ms typical duration - enabling predictable low-energy OTA updates. The device enters Deep Power-Down mode with 100 nA typical current and exits via Release Power-Down command without reset.

Key Specifications

Pinout & Package

AT25EU0041A-MAHN-T is housed in an 8-pad 2 mm × 3 mm × 0.6 mm DFN package with wettable flanks, RoHS-compliant and halogen-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial flash memory applications.

Compared with W25Q40EWSNIG and MT25QL04ABDV8ESF-0SIT, the AT25EU0041A-MAHN-T uniquely delivers 100 nA Deep Power-Down, 256-byte page erase, and 1.65 V operation - making it the only option qualified for multi-year battery life in sub-10 µA average-current edge nodes.

Availability

AT25EU0041A-MAHN-T is available at Aetrix Electronics and suitable for wearable health monitors, smart sensor nodes, industrial edge gateways, and medical diagnostic handhelds requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for AT25EU0041A-MAHN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The AT25EU0041A-MAHN-T belongs to Renesas' ultra-low-energy serial flash product line, engineered specifically for battery-powered edge devices demanding minimal active and standby power without sacrificing SPI performance or data integrity.

FAQ

What is the operating voltage range of the AT25EU0041A-MAHN-T?

The AT25EU0041A-MAHN-T operates from 1.65 V to 3.6 V, enabling direct interfacing with common low-voltage microcontrollers and energy-harvesting power supplies. This wide range supports both 1.8 V and 3.3 V system designs without level-shifting, and the 1.65 V minimum allows compatibility with aging batteries down to ~1.7 V under load - a critical feature for long-life wearables where the AT25EU0041A-MAHN-T maintains full functionality until end-of-battery life.

Does the AT25EU0041A-MAHN-T support execute-in-place (XiP) operation?

Yes, the AT25EU0041A-MAHN-T supports eXecute-in-Place (XiP) directly from flash memory, enabled by its high-speed quad-SPI interface (up to 108 MHz) and fast read commands including Fast Read Quad I/O (EBh). This eliminates the need to copy firmware into RAM before execution, reducing system memory footprint and boot time - a key advantage in resource-constrained edge devices using the AT25EU0041A-MAHN-T as primary program storage.

How does the Deep Power-Down mode function on the AT25EU0041A-MAHN-T?

The AT25EU0041A-MAHN-T enters Deep Power-Down mode via the 0xB9 command, reducing current consumption to 100 nA typical. It exits using the 0xAB Release Power-Down command without requiring hardware reset or VCC cycling. During DPD, all internal logic is halted except the wake-up circuitry, and the device retains full memory content - making the AT25EU0041A-MAHN-T ideal for intermittent-sensing applications where microcontroller-initiated wake-up triggers flash access.

Can the WP and HOLD pins be used simultaneously for quad-SPI I/O on the AT25EU0041A-MAHN-T?

Yes - when the Quad Enable (QE) bit in Status Register 2 is set to 1, the WP and HOLD pins become dedicated bidirectional I/O lines IO2 and IO3 respectively, enabling true 4-line quad-SPI communication. In this mode, hardware write protection and hold functionality are disabled; those features are only available when QE = 0. This dual-role design ensures the AT25EU0041A-MAHN-T maintains pin efficiency without requiring additional package leads.

What erase block sizes does the AT25EU0041A-MAHN-T support?

The AT25EU0041A-MAHN-T supports three erase granularities: 256-byte page erase, 4 kB / 32 kB / 64 kB block erase, and full chip erase - all with 8 ms typical duration. This flexibility allows optimized firmware update strategies: small configuration changes use page erase, application segments use 4 kB blocks, and major revisions use 64 kB blocks. Unlike conventional flash, the AT25EU0041A-MAHN-T's constant-time erase eliminates timing uncertainty in safety-critical systems.