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Renesas AT25EU0041A-SSHN-B
- Part No.:
- AT25EU0041A-SSHN-B
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AT25EU0041A-SSHN-B.pdf
- Description:
- IC FLASH 4MBIT SPI/QUAD 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,517
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Product details
Overview
AT25EU0041A-SSHN-B from Renesas Electronics is a 4-Mbit ultra-low-energy serial flash memory IC designed for SPI-based embedded storage in battery-constrained edge IoT and wearable systems. It supports 1.65–3.6 V operation, 108 MHz max clock frequency, quad-SPI (1,4,4), and delivers 100 nA deep power-down current with 2 ms typical page program time.
For engineers reviewing the AT25EU0041A-SSHN-B datasheet, AT25EU0041A-SSHN-B pinout, AT25EU0041A-SSHN-B application, or AT25EU0041A-SSHN-B equivalent, key selection considerations include its 256-byte page erase granularity, 3×512-byte OTP-locked security registers, flexible 4/32/64 kB block architecture, and dual/quad I/O command compatibility for XiP and OTA firmware updates.
Technical Context
The AT25EU0041A-SSHN-B implements a configurable SPI interface supporting modes 0 and 3, with dynamic reconfiguration between single/dual/quad I/O protocols via Status Register 2's Quad Enable (QE) bit. Its erase architecture enables constant-time 256-byte page erase, independent of block size - critical for efficient small-data logging and incremental firmware patching.
It integrates three 512-byte one-time-programmable (OTP) security registers with hardware lock, software/hardware write protection (WP pin + SR bits), and suspend/resume capability for both program and erase operations - enabling concurrent background memory management without halting host communication.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (512 KB) organized as 2048 × 256-byte pages; enables compact firmware storage with fine-grained update capability. |
| Supply Voltage Range | 1.65 V – 3.6 V; supports direct integration into single-cell Li-ion (2.7–4.2 V) and coin-cell (1.8–3.0 V) powered systems without LDO overhead. |
| Max Clock Frequency | 108 MHz; enables high-throughput read/write - e.g., 54 MB/s quad-I/O read speed - suitable for XiP execution in resource-limited MCUs. |
| Page Program Time | 2 ms typical; reduces firmware update latency and improves real-time responsiveness during over-the-air (OTA) patching. |
| Deep Power-Down Current | 100 nA typical; extends battery life in always-on sensor nodes by minimizing quiescent energy drain during idle periods. |
| Erase Granularity | 256-byte page erase; eliminates need to erase full sectors for small configuration or telemetry data writes, preserving endurance. |
| Cycling Endurance | 10,000 program/erase cycles per sector; ensures reliable operation across 5+ years of daily OTA updates in industrial edge devices. |
| Data Retention | 20 years at +85 °C; guarantees long-term firmware integrity in automotive and industrial environments without refresh. |
Pinout & Package
AT25EU0041A-SSHN-B is packaged in an industry-standard 8-lead SOIC (150-mil) with gull-wing leads, 1.27 mm pitch, and RoHS-compliant green finish. The package supports reflow soldering and is compatible with automated PCB assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable signal; falling edge initiates command sequence; must be stable before SCK edges; internal pull-up recommended. |
| SCK | Serial Clock | Master-generated clock; rising edge latches input (SI/IO0), falling edge clocks output (SO/IO1); supports up to 108 MHz. |
| SI / IO0 | Serial Input / Quad I/O 0 | Primary data input in SPI mode; becomes bidirectional I/O0 in dual/quad mode; no external pull required. |
| SO / IO1 | Serial Output / Quad I/O 1 | Primary data output in SPI mode; becomes bidirectional I/O1 in dual/quad mode; high-impedance when CS high. |
| WP / IO2 | Write Protect / Quad I/O 2 | Hardware write-protection control when QE=0; functions as IO2 in quad mode (QE=1); internally pulled high. |
| HOLD / IO3 | Hold Input / Quad I/O 3 | Pauses ongoing SPI transfer without resetting state when QE=0; serves as IO3 in quad mode; internally pulled high. |
| VCC | Power Supply | 1.65–3.6 V core supply; requires local 100 nF–1 µF decoupling capacitor near pins for stable high-speed operation. |
| GND | Ground Reference | System ground return path; must be low-impedance and directly connected to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Quad-SPI Command Set (1,4,4) | Enables 4× data throughput vs standard SPI - critical for fast XiP boot and OTA firmware delivery in constrained MCU systems. |
| 256-byte Page Erase | Allows atomic updates of small configuration blocks without erasing adjacent user data, maximizing memory utilization and endurance. |
| Program/Erase Suspend & Resume | Permits host to interrupt long-running erase or program operations to service higher-priority tasks, then resume seamlessly. |
| 3×512-byte OTP Security Registers | Provides tamper-resistant storage for keys, calibration data, or device identity; locked permanently after programming. |
| Deep Power-Down Mode (100 nA) | Reduces standby current by >10,000× vs active read mode - essential for multi-year battery life in wireless sensor nodes. |
| Flexible Block Architecture | Supports simultaneous use of 4 kB, 32 kB, and 64 kB erase blocks - optimizes erase time and energy for mixed-use applications. |
Applications
| Smart Wearable Firmware Storage | Industrial Sensor Node Data Logging |
|---|---|
Use Scenario: Storing boot firmware and runtime configuration in a wrist-worn health monitor powered by a 3.0 V coin cell. IC Role / Device Role / Timing Role: Non-volatile code storage with eXecute-in-Place (XiP) support and secure OTA update handling. Use Value: 100 nA deep power-down current extends battery life beyond 18 months; 256-byte page erase minimizes energy per firmware patch. |
Use Scenario: Recording temperature, humidity, and vibration telemetry every 5 minutes in a battery-powered factory floor sensor. IC Role / Device Role / Timing Role: Low-energy persistent data buffer with wear-leveling-friendly erase granularity. Use Value: 2 ms page program time enables rapid logging bursts; 10k endurance supports >13 years of daily 1000-write cycles. |
| Edge Gateway OTA Update Cache | Medical Diagnostic Device Boot Memory |
Use Scenario: Caching signed firmware images on a cellular-connected edge gateway prior to secure installation. IC Role / Device Role / Timing Role: High-reliability intermediate storage with suspend-capable erase for fail-safe update rollback. Use Value: Program/erase suspend/resume allows interruption during network handshaking; 20-year data retention ensures image validity. |
Use Scenario: Storing certified bootloader and safety-critical application code in a portable ultrasound device with strict qualification requirements. IC Role / Device Role / Timing Role: AEC-Q100-qualified (industrial temp range) non-volatile memory for certified boot chain integrity. Use Value: -40 °C to +85 °C operation and 20-year retention meet IEC 62304 Class C software lifecycle mandates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q40EWSNIG | 4 Mbit, 1.7–2.0 V min supply, 104 MHz max, no OTP security registers, 1 μA DPD current. | Lacks 3×512-byte OTP lock and 100 nA DPD; suited for cost-sensitive consumer apps where security and ultra-low sleep current are secondary. | Select W25Q40EWSNIG only if system operates strictly ≥1.7 V and security register functionality is unused. |
| Macronix MX25U4033FZUI | 4 Mbit, 1.65–3.6 V, 104 MHz max, 256-byte page erase, but only 1×512-byte OTP register and 500 nA DPD current. | Offers similar voltage range and erase flexibility but provides less secure key storage and 5× higher DPD current than AT25EU0041A-SSHN-B. | Choose MX25U4033FZUI when OTP capacity is sufficient and 100 nA DPD is not required for battery lifetime targets. |
Compared with W25Q40EWSNIG and MX25U4033FZUI, the AT25EU0041A-SSHN-B uniquely delivers 100 nA deep power-down current, triple OTP security registers with permanent lock, and guaranteed 108 MHz quad-SPI timing - making it the only option meeting stringent multi-year battery life and firmware security requirements in medical and industrial edge devices.
Availability
AT25EU0041A-SSHN-B is available at Aetrix Electronics and suitable for battery-powered IoT endpoints, wearable health monitors, and industrial sensor nodes requiring stable component supply, long-term lifecycle support, and RoHS-compliant green packaging.
Supply support for AT25EU0041A-SSHN-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.
The AT25EU0041A-SSHN-B belongs to Renesas' ultra-low-energy serial flash product line, engineered specifically for extended battery life and secure firmware storage in resource-constrained edge devices.
FAQ
What is the operating voltage range supported by the AT25EU0041A-SSHN-B?
The AT25EU0041A-SSHN-B supports a wide operating voltage range of 1.65 V to 3.6 V, enabling direct integration with single-cell lithium batteries (2.7–4.2 V), coin cells (1.8–3.0 V), and 3.3 V or 2.5 V logic domains without level-shifting. This range is validated across the full industrial temperature range (-40 °C to +85 °C) and ensures stable read/write/erase operation under varying battery discharge profiles.
Does the AT25EU0041A-SSHN-B support execute-in-place (XiP) operation?
Yes, the AT25EU0041A-SSHN-B supports eXecute-in-Place (XiP) operation through its high-speed quad-SPI interface (up to 108 MHz) and fast read commands (e.g., Quad I/O Fast Read). Its low-latency access and consistent timing allow MCUs to fetch and execute code directly from flash memory, eliminating the need for RAM loading and reducing system memory footprint in space-constrained designs.
How does the AT25EU0041A-SSHN-B implement hardware write protection?
The AT25EU0041A-SSHN-B implements hardware write protection via the WP pin (IO2), which - when asserted low and with Status Register protection bits configured - disables modification of status registers and memory contents. It also supports software-controlled protection (via SRP0/SRP1 bits) and top/bottom block selection, enabling granular lockdown of boot sectors while allowing runtime updates to application regions.
What is the significance of the 256-byte page erase capability in the AT25EU0041A-SSHN-B?
The 256-byte page erase capability in the AT25EU0041A-SSHN-B enables highly efficient small-data updates - such as sensor calibration values, device configuration flags, or firmware metadata - without erasing larger 4/32/64 kB blocks. This preserves memory endurance, reduces erase energy per operation by up to 95% versus full-block erase, and accelerates write latency in real-time logging applications.
Can the AT25EU0041A-SSHN-B be used in automotive applications?
The AT25EU0041A-SSHN-B is specified for industrial temperature range (-40 °C to +85 °C) and meets RoHS and green packaging requirements, but it is not AEC-Q100 qualified. For automotive applications requiring qualification, Renesas offers the pin-compatible AT25EU0041A-MAHN-B (DFN package) variant with AEC-Q100 Grade 2 certification - confirm qualification status per specific vehicle subsystem requirements before deployment.
AT25EU0041A-SSHN-B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR (SLC)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- SPI - Quad I/O
- Clock Frequency:
- 108 MHz
- Write Cycle Time - Word, Page:
- 3ms
- Access Time:
- 7 ns
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AT25EU0041A-SSHN-B FAQ
1.How can I place an order for AT25EU0041A-SSHN-B through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25EU0041A-SSHN-B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25EU0041A-SSHN-B reliable?
The price and inventory of AT25EU0041A-SSHN-B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25EU0041A-SSHN-B is usually 5 days.
3.What payment methods are accepted for AT25EU0041A-SSHN-B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25EU0041A-SSHN-B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25EU0041A-SSHN-B?
AT25EU0041A-SSHN-B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25EU0041A-SSHN-B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25EU0041A-SSHN-B?
For technical support, including AT25EU0041A-SSHN-B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25EU0041A-SSHN-B requirements.
6.How does Aetrix verify that AT25EU0041A-SSHN-B is sourced from the original manufacturer or authorized distributors?
All AT25EU0041A-SSHN-B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25EU0041A-SSHN-B meets industry standards.
7.What is the process for return or replacement of AT25EU0041A-SSHN-B?
All AT25EU0041A-SSHN-B units undergo pre-shipment inspection (PSI). If there is an issue with AT25EU0041A-SSHN-B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25EU0041A-SSHN-B part is unused and in its original packaging.
Return procedure for AT25EU0041A-SSHN-B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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