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Renesas AT25EU0161A-SSUN-B
- Part No.:
- AT25EU0161A-SSUN-B
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
AT25EU0161A-SSUN-B.pdf
- Description:
- IC FLASH 16MBIT
- Quantity:
- Payment:
- Shipping:
Inventory:1,740
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Product details
Overview
AT25EU0161A-SSUN-B from Renesas Electronics is a 16 Mbit ultra-low-energy serial NOR Flash memory with quad I/O interface, 85 MHz operation, 1.65–3.6 V supply range, and 256-byte page erase capability. It serves as nonvolatile code/data storage in battery-powered IoT sensors, wearables, and medical telemetry devices requiring minimal energy per erase/program operation.
For engineers reviewing the AT25EU0161A-SSUN-B datasheet, AT25EU0161A-SSUN-B pinout, AT25EU0161A-SSUN-B application, or AT25EU0161A-SSUN-B equivalent, key selection criteria include deep power-down current (100 nA), uniform 8 ms erase time across all block sizes, SFDP v1.8 compliance, and quad I/O fast read support for high-throughput logging.
Technical Context
The AT25EU0161A-SSUN-B implements a JEDEC-compliant serial NOR architecture with configurable 1-1-1 / 1-1-2 / 1-1-4 SPI modes and continuous fast read in quad I/O mode. Its command set includes standard Read, Page Program, and uniform 8 ms erase for all block granularities - 256 B, 4 KB, 32 KB, 64 KB, and full chip.
It integrates OTP registers for security configuration and supports SFDP v1.8 for automatic parameter discovery. The device operates across 1.65–3.6 V without external regulators, enabling direct integration with Li-ion, Li-poly, or coin-cell power sources while maintaining 85 MHz clock tolerance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 16 Mbit (2 MB) - supports firmware images up to ~1.8 MB with overhead |
| Supply Voltage | 1.65 V to 3.6 V - eliminates need for dedicated voltage regulators in single-cell battery systems |
| Max Clock Frequency | 85 MHz - enables 340 MB/s effective throughput in Quad I/O continuous fast read mode |
| Deep Power-Down Current | 100 nA - extends shelf life and operational runtime in intermittently active sensor nodes |
| Page Erase Time | 8 ms (typ) for 256-byte pages - reduces energy per small update by >60× vs legacy serial NOR |
| Erase Uniformity | 8 ms (typ) for all block sizes - simplifies firmware logic by removing granularity-dependent timing branches |
| SFDP Version | v1.8 - enables automatic configuration of read latency, dummy cycles, and address width at boot |
Pinout & Package
AT25EU0161A-SSUN-B is packaged in an 8-pin SOIC (208 mil) with industry-standard pinout compatible with JEDEC MS-012AA. Pin functions follow standard serial NOR conventions: VCC, GND, SI, SO, WP#, HOLD#, SCK, and CS#.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (CS#) | Chip Select | Active-low enable for SPI command/address/data transfer; must be held low during entire transaction |
| 2 (SO) | Serial Output | Tri-state output for read data and status register reads; supports dual/quad I/O when configured |
| 3 (WP#) | Write Protect | Hardware lock for status register and sector protection; pulled high internally when not asserted |
| 4 (GND) | Ground | Reference return path for all digital and analog circuitry; requires low-impedance connection |
| 5 (SI) | Serial Input | Command, address, and program data input; supports dual/quad input when configured |
| 6 (SCK) | Serial Clock | Master-generated clock synchronizing all SPI transfers; max 85 MHz frequency supported |
| 7 (HOLD#) | Hold Function | Pauses ongoing read without deselecting chip; retains internal address pointer during pause |
| 8 (VCC) | Power Supply | Single supply rail supporting 1.65–3.6 V; decoupling capacitor required within 10 mm of pin |
Key Features
| Feature | Design Value |
|---|---|
| Uniform 8 ms erase time | All erase operations (256 B to full chip) complete in identical typical time - eliminates firmware timing branches and improves predictability |
| 256-byte page erase | Minimizes flash wear and CPU overhead for event logging; avoids erasing unused sectors during small updates |
| 100 nA deep power-down | Enables multi-year shelf life and years of field operation on coin-cell batteries without external power gating |
| Quad I/O continuous fast read | Delivers sustained high bandwidth for firmware execution or streaming log retrieval without command overhead penalties |
| SFDP v1.8 compliance | Allows host MCU to auto-negotiate optimal read settings (latency, dummy cycles) without hard-coded initialization sequences |
Applications
| Wireless Sensor Node | Portable Medical Monitor |
|---|---|
Use Scenario: Battery-powered temperature/humidity node transmitting hourly logs via BLE. IC Role / Device Role / Timing Role: Nonvolatile storage for firmware, calibration data, and timestamped sensor readings. Use Value: 100 nA deep power-down extends 200 mAh coin-cell life beyond 5 years; 256-byte page erase minimizes energy per log entry. | Use Scenario: Wearable ECG patch recording 30-second waveform snippets on demand. IC Role / Device Role / Timing Role: High-reliability data buffer storing raw analog samples prior to wireless upload. Use Value: Uniform 8 ms erase ensures consistent latency for overwrite operations; wide Vcc supports direct Li-poly (3.0–3.6 V) operation. |
| Smart Meter Firmware Storage | Industrial Predictive Maintenance Edge Logger |
Use Scenario: Utility meter retaining firmware and tamper-event history across 15+ year deployments. IC Role / Device Role / Timing Role: Code storage and secure event logging with OTP-protected configuration. Use Value: SFDP v1.8 enables field-upgradable read optimization; 1.65 V minimum Vcc ensures operation during brown-out conditions. | Use Scenario: Vibration sensor node collecting motor health data in factory environments with intermittent power. IC Role / Device Role / Timing Role: Local buffering of high-frequency ADC streams before batch transmission. Use Value: Quad I/O fast read sustains >300 MB/s burst retrieval; 85 MHz clock tolerance accommodates industrial-grade crystal variance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial NOR Flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q16JVSNIQ | 16 Mbit, 1.7–2.0 V only; no 256-byte page erase; 30 ms typical 4 KB erase | Limited to 1.8 V systems; higher energy per small update due to larger minimum erase unit | Choose if operating exclusively at 1.8 V and legacy command compatibility is required |
| Micron MT25QL128ABA8ESF-0SIT | 128 Mbit density; 1.7–2.0 V; supports octal DTR; 40 ms typical 4 KB erase | Higher density but narrower Vcc range; slower small-block erase increases logging energy | Choose for high-capacity firmware storage where voltage regulation is already present |
Compared with W25Q16JVSNIQ and MT25QL128ABA8ESF-0SIT, the AT25EU0161A-SSUN-B uniquely delivers uniform 8 ms erase across all granularities and 100 nA deep power-down - critical for energy-constrained edge logging where both update frequency and battery longevity matter.
Availability
AT25EU0161A-SSUN-B is available at Aetrix Electronics and suitable for wireless sensor nodes, portable medical monitors, smart meter firmware storage, and industrial predictive maintenance edge loggers requiring stable component supply and long-term lifecycle assurance.
Supply support for AT25EU0161A-SSUN-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, infrastructure, and IoT applications.
The AT25EU0161A-SSUN-B belongs to Renesas' ultra-low-energy serial NOR Flash product line, engineered specifically for battery-operated edge devices where minimizing total energy per storage operation-not just static current-is the primary design constraint.
FAQ
What is the minimum supply voltage required for reliable operation of the AT25EU0161A-SSUN-B?
The AT25EU0161A-SSUN-B operates reliably down to 1.65 V across its full temperature range. This allows direct interfacing with aging lithium coin cells or single-cell Li-ion batteries without intermediate regulation. Below 1.65 V, command execution and data retention are not guaranteed per the AT25EU0161A-SSUN-B datasheet specifications.
Does the AT25EU0161A-SSUN-B support quad I/O mode with continuous fast read?
Yes, the AT25EU0161A-SSUN-B supports quad I/O with continuous fast read, achieving up to 340 MB/s effective throughput at 85 MHz. This mode uses all four I/O pins bidirectionally for data, eliminating instruction overhead between successive words - a key advantage for firmware XIP or high-speed log streaming in the AT25EU0161A-SSUN-B.
How does the 256-byte page erase capability of the AT25EU0161A-SSUN-B reduce flash wear?
The AT25EU0161A-SSUN-B's 256-byte page erase avoids erasing entire 4 KB sectors when updating small data records. Since flash endurance is rated per erase cycle, limiting erasure to only the necessary bytes extends usable lifetime by orders of magnitude - especially critical in event logging applications using the AT25EU0161A-SSUN-B.
Is the AT25EU0161A-SSUN-B pin-compatible with standard 8-pin SOIC serial NOR Flash devices?
Yes, the AT25EU0161A-SSUN-B uses the industry-standard 8-pin SOIC (208 mil) footprint and JEDEC-compliant pinout (CS#, SO, WP#, GND, SI, SCK, HOLD#, VCC). No PCB redesign is needed when replacing legacy serial NOR Flash in existing layouts, provided timing and voltage requirements of the AT25EU0161A-SSUN-B are met.
What security features are integrated into the AT25EU0161A-SSUN-B?
The AT25EU0161A-SSUN-B includes One-Time Programmable (OTP) registers for permanent configuration locking and standard security commands (Global Block Protection, Individual Sector Protection). These features prevent unauthorized firmware modification or data extraction, making the AT25EU0161A-SSUN-B suitable for certified medical and industrial deployments.
AT25EU0161A-SSUN-B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- -
- Memory Format:
- FLASH
- Technology:
- -
- Memory Size:
- 16Mbit
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
AT25EU0161A-SSUN-B FAQ
1.How can I place an order for AT25EU0161A-SSUN-B through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25EU0161A-SSUN-B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25EU0161A-SSUN-B reliable?
The price and inventory of AT25EU0161A-SSUN-B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25EU0161A-SSUN-B is usually 5 days.
3.What payment methods are accepted for AT25EU0161A-SSUN-B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25EU0161A-SSUN-B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25EU0161A-SSUN-B?
AT25EU0161A-SSUN-B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25EU0161A-SSUN-B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25EU0161A-SSUN-B?
For technical support, including AT25EU0161A-SSUN-B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25EU0161A-SSUN-B requirements.
6.How does Aetrix verify that AT25EU0161A-SSUN-B is sourced from the original manufacturer or authorized distributors?
All AT25EU0161A-SSUN-B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25EU0161A-SSUN-B meets industry standards.
7.What is the process for return or replacement of AT25EU0161A-SSUN-B?
All AT25EU0161A-SSUN-B units undergo pre-shipment inspection (PSI). If there is an issue with AT25EU0161A-SSUN-B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25EU0161A-SSUN-B part is unused and in its original packaging.
Return procedure for AT25EU0161A-SSUN-B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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