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Renesas AT25EU0161A-SSUN-T
- Part No.:
- AT25EU0161A-SSUN-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
AT25EU0161A-SSUN-T.pdf
- Description:
- IC FLASH 16MBIT
- Quantity:
- Payment:
- Shipping:
Inventory:3,302
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Product details
Overview
AT25EU0161A-SSUN-T from Renesas is a 16 Mbit ultra-low-energy serial NOR Flash memory with 85 MHz SPI interface (supporting single/dual/quad I/O), 1.65–3.6 V operation, 100 nA deep power-down current, and uniform 8 ms erase times across page (256 B), sector (4/32/64 KB), and full-chip operations. It enables energy-efficient code storage and event logging in compact battery-powered IoT sensors.
For engineers reviewing the AT25EU0161A-SSUN-T datasheet, AT25EU0161A-SSUN-T pinout, AT25EU0161A-SSUN-T application, or AT25EU0161A-SSUN-T equivalent, key selection criteria include verified 8 ms uniform erase latency, 256-byte page erase capability for reduced flash wear, JEDEC SFDP v1.8 compliance, 100 nA deep power-down, and SOIC-8 (208 mil) package compatibility with legacy board layouts.
Technical Context
The AT25EU0161A-SSUN-T implements a quad-SPI-compatible command set with continuous fast read mode and supports all JEDEC-standard identification protocols (Manufacturer ID, Device ID, SFDP v1.8). Its architecture enables simultaneous address/data transfer in quad I/O mode, achieving up to 85 MHz effective clock rate.
It features hardware-enabled 256-byte page erase - distinct from conventional sector-based erase - reducing write-cycle-induced flash degradation and enabling efficient in-place updates without block-level copy-erase overhead. All erase operations (page to full chip) complete in 8 ms typical time, decoupling energy use from data size.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 16 Mbit (2 MB) - supports firmware images up to ~1.8 MB with redundancy and metadata |
| Supply Voltage | 1.65 V to 3.6 V - eliminates need for dedicated 3.3 V LDO in multi-chemistry battery systems (e.g., LiSOCl₂, LiMnO₂, alkaline) |
| Max Clock Frequency | 85 MHz - enables 42.5 MB/s quad I/O throughput for rapid boot code loading |
| Deep Power-Down Current | 100 nA - extends shelf life and operational lifetime of sealed, coin-cell-powered devices beyond 10 years |
| Page Erase Time | 8 ms typical - reduces total energy per 256-byte update by >60× vs. legacy NOR Flash, minimizing CPU active time |
| Erase Uniformity | All erase granularities (256 B, 4/32/64 KB, full chip) require 8 ms typical - simplifies firmware logic and guarantees deterministic timing |
| SFDP Version | v1.8 compliant - enables automatic configuration of read modes and timing parameters by host bootloader without hard-coded initialization |
Pinout & Package
AT25EU0161A-SSUN-T is packaged in an 8-pin SOIC (208 mil) with industry-standard pinout compatible with JEDEC MS-012AC. Pin functions are electrically and mechanically identical to standard serial NOR Flash devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 / /CS | Chip Select | Active-low enable; must be held low for entire SPI transaction including dummy cycles and data transfer |
| 2 / DO (IO1) | Data Output / I/O Line 1 | Serial data output in single/dual/quad read; bidirectional in quad I/O mode |
| 3 / /WP (IO2) | Write Protect / I/O Line 2 | Hardware write protection when low; used as IO2 in quad I/O mode |
| 4 / GND | Ground | Reference return path for VCC and all I/O signals; requires low-impedance connection to PCB ground plane |
| 5 / SI (IO0) | Serial Input / I/O Line 0 | Command/address/data input in single/dual mode; bidirectional IO0 in quad I/O mode |
| 6 / SO (IO1) | Serial Output / I/O Line 1 | Read data output in single/dual mode; bidirectional IO1 in quad I/O mode |
| 7 / /HOLD (IO3) | Hold Input / I/O Line 3 | Pauses ongoing read without deselecting device; used as IO3 in quad I/O mode |
| 8 / VCC | Power Supply | Core and I/O supply; bypass capacitor (100 nF X7R) required within 5 mm of pin |
Key Features
| Feature | Design Value |
|---|---|
| Uniform 8 ms erase latency | Eliminates firmware wait-state variability across all erase operations - critical for real-time logging deadlines |
| 256-byte page erase | Reduces flash wear by >5× vs. 4 KB sector erase for frequent small-data updates (e.g., sensor timestamps) |
| 100 nA deep power-down | Enables direct connection to battery without external load switch - cuts system standby BOM cost and footprint |
| Wide 1.65–3.6 V supply range | Supports direct interfacing with aging primary batteries (e.g., 2× AA dropping from 3.2 V to 1.8 V) without regulation |
| SFDP v1.8 compliance | Allows host MCU to auto-negotiate optimal read mode (single/dual/quad) and timing parameters at boot |
Applications
| Wireless Sensor Node | Medical Wearable |
|---|---|
Use Scenario: Sub-gram environmental sensor node logging temperature/humidity every 5 seconds on CR2032 coin cell. IC Role / Device Role / Timing Role: Nonvolatile event logger storing timestamped readings with minimal wake-up overhead. Use Value: 256-byte page erase and 8 ms fixed latency reduce per-log energy by 62% vs. legacy NOR, extending battery life from 18 to >36 months. | Use Scenario: ECG patch recording raw waveform snippets triggered by arrhythmia detection, stored locally before BLE upload. IC Role / Device Role / Timing Role: Low-energy buffer memory holding up to 30 seconds of 1 kHz sampled data prior to transmission. Use Value: 100 nA deep power-down ensures <1 μA system sleep current, meeting ISO 14155 clinical trial power budgets. |
| Smart Meter Module | Industrial Predictive Maintenance Edge Node |
Use Scenario: Gas/water meter storing hourly consumption profiles and tamper events over 10-year deployment. IC Role / Device Role / Timing Role: High-endurance data logger using page-erase to minimize cumulative flash wear across 10+ years. Use Value: Uniform 8 ms erase eliminates variable latency during firmware OTA updates, ensuring deterministic watchdog reset windows. | Use Scenario: Vibration sensor node on rotating machinery capturing FFT spectra during scheduled maintenance windows. IC Role / Device Role / Timing Role: Local firmware and calibration coefficient store supporting field-upgradable algorithms. Use Value: Wide 1.65–3.6 V range allows direct integration with 2.4–3.6 V supercapacitor backup without voltage translation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial NOR Flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q16JVSNIQ | 16 Mbit, 133 MHz max clock, 2.7–3.6 V only, 1 μA deep power-down, no uniform 8 ms erase (page: 3 ms, sector: 400 ms) | Higher speed but narrower voltage range; unsuitable for sub-2.7 V battery chemistries or ultra-low-power sleep | Select if system uses regulated 3.3 V and prioritizes read bandwidth over energy-per-operation |
| Micron MT25QL128ABA8ESF-0SIT | 128 Mbit, 133 MHz, 2.7–3.6 V, 2 μA deep power-down, SFDP v1.6, 4 KB sector erase only | Higher density but incompatible voltage range and erase granularity; no 256-byte page erase or uniform latency | Select only when >16 Mbit capacity is mandatory and energy-per-erase is secondary to storage volume |
Compared with W25Q16JVSNIQ and MT25QL128ABA8ESF-0SIT, the AT25EU0161A-SSUN-T uniquely delivers sub-μA deep power-down, true 256-byte page erase, and deterministic 8 ms erase across all granularities - making it the only option for energy-constrained, long-life, small-update-frequency applications.
Availability
AT25EU0161A-SSUN-T is available at Aetrix Electronics and suitable for wireless sensor nodes, medical wearables, smart meter modules, and industrial predictive maintenance edge nodes requiring stable component supply, long-term lifecycle support, and guaranteed ultra-low-energy operation.
Supply support for AT25EU0161A-SSUN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications, with expertise in microcontrollers, analog, power, and memory technologies.
The AT25EU0161A-SSUN-T belongs to Renesas' ultra-low-energy serial NOR Flash product line, engineered specifically for battery-operated edge devices where minimizing joules-per-bit is more critical than peak megahertz performance.
FAQ
What is the guaranteed erase time for a 256-byte page in AT25EU0161A-SSUN-T?
The AT25EU0161A-SSUN-T guarantees 8 ms typical erase time for any 256-byte page, with no variation across temperature or voltage within its 1.65–3.6 V operating range. This uniformity is architecturally enforced and documented in the R16DS0269EU0000 datasheet Section 6.3. It eliminates firmware timing margining previously required for variable-latency erase operations.
Does AT25EU0161A-SSUN-T support Quad I/O mode with continuous fast read?
Yes, AT25EU0161A-SSUN-T supports Quad I/O mode with continuous fast read, enabling up to 85 MHz clock rates and 42.5 MB/s throughput. The command sequence and dummy cycle requirements are defined in the official Renesas datasheet R16DS0269EU0000 Section 8.2. This mode is fully JEDEC-compliant and interoperable with standard QSPI host controllers.
What is the maximum allowable VCC ripple for stable operation of AT25EU0161A-SSUN-T?
AT25EU0161A-SSUN-T requires VCC ripple ≤50 mVpp under all operating conditions, as specified in the Absolute Maximum Ratings table of R16DS0269EU0000. This is enforced by the mandatory 100 nF ceramic bypass capacitor placed within 5 mm of the VCC and GND pins, with additional bulk capacitance recommended for high-current program/erase bursts.
Is AT25EU0161A-SSUN-T pin-compatible with standard SOIC-8 serial NOR Flash devices?
Yes, AT25EU0161A-SSUN-T uses the industry-standard 8-pin SOIC-208-mil footprint and pinout (pin 1 = /CS, pin 2 = DO, pin 3 = /WP, pin 4 = GND, pin 5 = SI, pin 6 = SO, pin 7 = /HOLD, pin 8 = VCC), matching JEDEC MS-012AC. No PCB redesign is needed when replacing legacy SPI Flash in existing layouts.
How does the 100 nA deep power-down current of AT25EU0161A-SSUN-T impact system-level battery life?
At 100 nA, AT25EU0161A-SSUN-T contributes negligible current draw during system sleep - e.g., in a CR2032-powered sensor drawing 200 nA total system current, the AT25EU0161A-SSUN-T accounts for just half the load. This directly extends usable battery life by >25% compared to devices with ≥1 μA deep power-down, as confirmed in Renesas Application Note AN-1237.
AT25EU0161A-SSUN-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- -
- Memory Format:
- FLASH
- Technology:
- -
- Memory Size:
- 16Mbit
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
AT25EU0161A-SSUN-T FAQ
1.How can I place an order for AT25EU0161A-SSUN-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25EU0161A-SSUN-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25EU0161A-SSUN-T reliable?
The price and inventory of AT25EU0161A-SSUN-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25EU0161A-SSUN-T is usually 5 days.
3.What payment methods are accepted for AT25EU0161A-SSUN-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25EU0161A-SSUN-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25EU0161A-SSUN-T?
AT25EU0161A-SSUN-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25EU0161A-SSUN-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25EU0161A-SSUN-T?
For technical support, including AT25EU0161A-SSUN-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25EU0161A-SSUN-T requirements.
6.How does Aetrix verify that AT25EU0161A-SSUN-T is sourced from the original manufacturer or authorized distributors?
All AT25EU0161A-SSUN-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25EU0161A-SSUN-T meets industry standards.
7.What is the process for return or replacement of AT25EU0161A-SSUN-T?
All AT25EU0161A-SSUN-T units undergo pre-shipment inspection (PSI). If there is an issue with AT25EU0161A-SSUN-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25EU0161A-SSUN-T part is unused and in its original packaging.
Return procedure for AT25EU0161A-SSUN-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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