Renesas AT25EU016A-SUN-B

Overview

AT25EU016A-SUN-B from Renesas Electronics is a 16 Mbit ultra-low-energy serial NOR Flash memory IC designed for code storage and event/data logging in battery-powered systems. It supports 1.65V–3.6V operation, 85 MHz SPI interface (1-1-1/1-1-2/1-1-4), 256-byte page erase, and achieves 100 nA deep power-down current.

For engineers reviewing the AT25EU016A-SUN-B datasheet, AT25EU016A-SUN-B pinout, AT25EU016A-SUN-B application, or AT25EU016A-SUN-B equivalent, key selection criteria include energy-per-operation efficiency, quad I/O support for fast read throughput, 256-byte granularity for wear-aware logging, and wide Vcc tolerance enabling direct Li-ion/Li-poly or coin-cell integration without regulation.

Technical Context

The AT25EU016A-SUN-B implements a JEDEC-compliant SPI interface with full SFDP v1.8 support, enabling automatic configuration of read modes (Single/Dual/Quad) and timing parameters. Its command set includes standard manufacturer/device ID reads and security OTP register access.

It uses a uniform 256-byte page architecture where all erase operations - page (256 B), sector (4 KB), block (32/64 KB), and full chip - complete in 8 ms typical, minimizing active time and total energy per write cycle. Deep power-down mode enters at 100 nA with wake-up via CS# deassertion.

Key Specifications

Pinout & Package

AT25EU016A-SUN-B is packaged in an 8-pin SOIC (208 mil) with industry-standard SPI pinout: Pin 1 = /CS, Pin 2 = DO (IO1), Pin 3 = /WP (IO2), Pin 4 = GND, Pin 5 = DI (IO0), Pin 6 = CLK, Pin 7 = /HOLD (IO3), Pin 8 = VCC.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial NOR Flash applications.

Compared with W25Q16JW and MT25QL016ABA, the AT25EU016A-SUN-B uniquely delivers sub-μA deep power-down *combined* with 256-byte page erase and 1.65V minimum Vcc - making it the only option that simultaneously satisfies ultra-long battery life, wear-aware logging, and broad battery chemistry support.

Availability

AT25EU016A-SUN-B is available at Aetrix Electronics and suitable for smart sensor nodes, wearable health monitors, industrial edge loggers, and asset tracking beacons requiring stable component supply and long-term manufacturability.

Supply support for AT25EU016A-SUN-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, infrastructure, and IoT applications.

The AT25EU016A-SUN-B belongs to Renesas' ultra-low-energy serial NOR Flash product line, engineered specifically for battery-constrained applications demanding minimal energy-per-operation in code storage and event/data logging.

FAQ

What is the minimum supply voltage supported by the AT25EU016A-SUN-B?

The AT25EU016A-SUN-B operates down to 1.65V, enabling direct use with aging LiFePO₄ cells (down to ~2.5V) and certain coin-cell configurations. This eliminates the need for voltage regulation in space- and power-constrained designs, unlike alternatives requiring ≥2.7V. The AT25EU016A-SUN-B maintains full functionality-including 85 MHz Quad I/O and 100 nA deep power-down-across the entire 1.65–3.6V range.

Does the AT25EU016A-SUN-B support Quad I/O mode with continuous Fast Read?

Yes, the AT25EU016A-SUN-B supports (1-1-4) Quad I/O with continuous Fast Read, achieving up to 42.5 MB/s effective throughput at 85 MHz. This mode uses all four I/O pins bidirectionally for address and data, reducing instruction overhead versus standard Quad Output. The AT25EU016A-SUN-B implements JEDEC SFDP v1.8 to auto-negotiate timing and enable this mode without hardcoded initialization sequences.

How does the 256-byte page erase capability of the AT25EU016A-SUN-B improve flash endurance?

The AT25EU016A-SUN-B's 256-byte page erase avoids unnecessary wear on adjacent data by limiting erasure to only the required bytes-unlike conventional 4 KB sector erase that degrades unused regions. This extends usable lifetime in event/data logging applications where small records (e.g., timestamps, sensor readings) are updated frequently. The AT25EU016A-SUN-B guarantees uniform 8 ms erase time across all granularities, ensuring predictable wear distribution.

What is the typical deep power-down current of the AT25EU016A-SUN-B, and how is it entered?

The AT25EU016A-SUN-B draws 100 nA typical in deep power-down mode, entered by driving /CS high while holding CLK low for ≥100 ns after the final clock edge of any instruction. No additional command is required. This ultra-low quiescent current dominates system sleep power in battery-operated devices, enabling multi-year operation on coin cells. The AT25EU016A-SUN-B exits deep power-down automatically upon /CS assertion, with no wake-up latency penalty.

Is the AT25EU016A-SUN-B pin-compatible with standard 8-pin SOIC SPI Flash devices?

Yes, the AT25EU016A-SUN-B uses the industry-standard 8-pin SOIC (208 mil) footprint and pinout: /CS, DO, /WP, GND, DI, CLK, /HOLD, VCC. It accepts standard SPI commands (e.g., Read, Page Program, Sector Erase) and JEDEC IDs, allowing drop-in replacement in existing layouts-provided the host firmware supports its extended instruction set (e.g., 256-byte page erase, Quad I/O enable) and wider Vcc range.