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Microchip Technology AT25F512B-MAH-T
- Part No.:
- AT25F512B-MAH-T
- Manufacturer:
- Microchip Technology
- Category:
- Memory
- Package:
- 8-UFDFN Exposed Pad
- Datasheet:
-
AT25F512B-MAH-T.pdf
- Description:
- IC FLASH 512KBIT SPI 70MHZ 8UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,743
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Product details
Overview
AT25F512B-MAH-T from Microchip Technology is a 512-Kbit serial SPI Flash memory IC designed for code shadowing and data storage in 3V embedded systems. It operates from 2.7V–3.6V, supports SPI Modes 0/3 up to 70 MHz, features uniform 4-Kbyte and 32-Kbyte block erase, and includes hardware write protection via WP pin and a 128-byte OTP security register.
For engineers reviewing the AT25F512B-MAH-T datasheet, AT25F512B-MAH-T pinout, AT25F512B-MAH-T application, or AT25F512B-MAH-T equivalent, key selection criteria include its 70 MHz max clock frequency, 6 ns clock-to-output timing, flexible erase granularity, deep power-down current of 5 µA, and industrial temperature range compliance.
Technical Context
The AT25F512B-MAH-T implements a dedicated SPI interface with rising-edge input (SI) and falling-edge output (SO), supporting dual read opcodes (0Bh at ≤70 MHz, 03h at ≤33 MHz) and intelligent program/erase error detection via EPE bit in status register. Its internal address counter enables continuous sequential reads with automatic wraparound.
It uses a nonvolatile Status Register with WEL (Write Enable Latch) and BP0 (Block Protection) bits, where BP0 state persists across power cycles. Hardware locking requires coordinated use of WP pin assertion and BPL bit setting - only when both are active is BP0 locked against software modification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Kbit (64 Kbytes), sufficient for firmware boot images or configuration data in space-constrained designs. |
| Supply Voltage | 2.7V–3.6V single supply - compatible with standard 3V logic rails without level shifting or auxiliary voltage generation. |
| Max Clock Frequency | 70 MHz - enables high-throughput read operations with tV ≤ 6 ns, reducing CPU wait states during code fetch. |
| Erase Granularity | Uniform 4-Kbyte and 32-Kbyte blocks plus full chip erase - minimizes wasted space vs. large-sector Flash, enabling efficient co-location of code modules and data segments. |
| Program Time | 2.5 ms typical for 256-byte page - supports rapid field updates without long blocking delays. |
| Endurance & Retention | 100,000 program/erase cycles and 20-year data retention - suitable for applications requiring infrequent but reliable reprogramming over product lifetime. |
| Power Consumption | 6 mA active read current (20 MHz), 5 µA deep power-down - ideal for battery-backed or low-power IoT nodes needing periodic wake-and-read operation. |
Pinout & Package
AT25F512B-MAH-T is packaged in an 8-lead SOIC (150-mil wide), pin-compatible with industry-standard serial Flash footprints.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable signal; rising edge ends operations and places SO in high-Z; required to initiate all commands. |
| SCK | Serial Clock | Input clock controlling data transfer timing; SI latched on rising edge, SO driven on falling edge per SPI Mode 0/3. |
| SI | Serial Input | Command, address, and data input line; ignored when CS is deasserted. |
| SO | Serial Output | Data output line; tri-states when CS is deasserted; outputs MSB-first during read sequences. |
| WP | Write Protect | Hardware lock control input; when asserted + BPL=1, prevents software modification of BP0 bit and memory protection state. |
| HOLD | Hold | Pauses ongoing SPI communication without deselecting device; requires CS low and SCK low to activate; does not interrupt internal program/erase cycles. |
| VCC | Power Supply | 2.7V–3.6V main supply; no separate programming voltage required. |
| GND | Ground | Reference return path for VCC and all I/O signals. |
Key Features
| Feature | Design Value |
|---|---|
| Flexible Erase Architecture | Supports 4-Kbyte, 32-Kbyte, and full-chip erase - eliminates need for external EEPROM by enabling reliable in-field data logging alongside firmware storage. |
| OTP Security Register | 128-byte register with 64-byte user-programmable section and 64-byte factory-unique segment - enables secure device serialization and cryptographic key binding without external secure elements. |
| Hardware Write Protection | WP pin + BPL bit coordination provides tamper-resistant locking of protection state - prevents unauthorized firmware overwrite even if host MCU is compromised. |
| Deep Power-Down Mode | 5 µA typical current draw - extends battery life in always-on sensor nodes or remote controllers between wake events. |
| JEDEC ID Read Support | Standard 9Fh command returns manufacturer (0x1F) and device ID (0x20) - simplifies automated BOM verification and multi-vendor Flash inventory management in production test. |
Applications
| Industrial HMI Firmware Storage | Medical Device Configuration Data |
|---|---|
Use Scenario: Storing boot firmware and UI assets for touch-based HMIs in factory automation panels operating continuously at 85°C. IC Role / Device Role / Timing Role: Nonvolatile code storage with fast random-access read capability; executes shadowed code from RAM while retaining update flexibility. Use Value: Uniform 4-Kbyte erase allows incremental firmware patches without erasing entire application, preserving calibration data stored elsewhere in array. | Use Scenario: Retaining patient-specific calibration parameters and usage logs in portable ultrasound devices with strict power budget constraints. IC Role / Device Role / Timing Role: Low-power data logger with guaranteed 20-year retention; accessed intermittently during device startup and shutdown. Use Value: 5 µA deep power-down current extends single-cell Li-ion battery life beyond 18 months in standby mode. |
| Smart Meter Firmware Update | Automotive Body Control Module Bootloader |
Use Scenario: Field-upgradable meter firmware deployed via PLC or RF mesh networks, requiring robustness against power loss during write. IC Role / Device Role / Timing Role: Dual-role Flash: stores signed bootloader and application image; supports atomic sector swaps using 32-Kbyte blocks. Use Value: Built-in EPE bit detection and status polling eliminate need for external CRC validation during OTA updates, reducing MCU overhead. | Use Scenario: Secure boot storage in automotive BCMs where firmware integrity must survive vibration, thermal cycling, and ESD events. IC Role / Device Role / Timing Role: Trusted code repository with hardware-locked protection; OTP register holds asymmetric key hash verified at boot. Use Value: WP pin + BPL bit prevents malicious reprogramming attempts even if CAN bus controller is compromised. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| W25Q80DVSSIG | 8-Mbit density (16× larger), 104 MHz max clock, Quad SPI support, no HOLD pin, different status register map. | Better suited for high-speed code execution; lacks HOLD functionality needed for deterministic pause in real-time systems. | Select when higher density and faster throughput outweigh need for HOLD and identical command set. |
| SST25VF512A-33-4C-QAE | Same 512-Kbit density, 33 MHz max clock, no OTP register, no deep power-down mode, different WP/HOLD behavior. | Limited to lower-frequency control applications; unsuitable for battery-powered devices requiring µA-level sleep current. | Choose only for legacy drop-in replacement where 70 MHz speed and 5 µA power-down are not required. |
Compared with W25Q80DVSSIG and SST25VF512A-33-4C-QAE, the AT25F512B-MAH-T uniquely balances moderate density, 70 MHz performance, hardware HOLD support, and ultra-low deep power-down current - making it optimal for resource-constrained, field-upgradable embedded systems requiring deterministic timing and extended battery life.
Availability
AT25F512B-MAH-T is available at Aetrix Electronics and suitable for industrial HMI firmware storage, medical device configuration data, and smart meter firmware update applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for AT25F512B-MAH-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, Flash memory, and security solutions for industrial, automotive, and consumer markets.
The AT25F512B-MAH-T belongs to Microchip's AT25F family of SPI Flash memories, engineered specifically for cost-sensitive, 3V embedded systems needing reliable code and data storage with flexible erase architecture and integrated security features.
FAQ
What is the maximum clock frequency supported by the AT25F512B-MAH-T during read operations?
The AT25F512B-MAH-T supports up to 70 MHz for read operations when using the 0Bh opcode, with a maximum clock-to-output delay (tV) of 6 ns. At lower frequencies (≤33 MHz), the 03h opcode may be used. This high-speed capability reduces CPU wait states during code shadowing and improves system responsiveness in real-time applications.
Does the AT25F512B-MAH-T require a separate programming voltage?
No, the AT25F512B-MAH-T does not require a separate programming voltage. All read, program, and erase operations are performed using the same 2.7V–3.6V VCC supply. This simplifies power design by eliminating charge pumps or voltage boosters, reducing bill-of-materials cost and PCB area in compact embedded systems.
How does hardware write protection work on the AT25F512B-MAH-T?
Hardware write protection on the AT25F512B-MAH-T requires both assertion of the WP pin (low) and setting the BPL bit in the Status Register to "1". When both conditions are met, the BP0 bit (which controls full-array protection) becomes locked and cannot be modified via Write Status Register command - preventing unauthorized changes to memory protection state even if the host MCU is compromised.
Can the AT25F512B-MAH-T be used in battery-powered applications?
Yes, the AT25F512B-MAH-T is well-suited for battery-powered applications due to its 5 µA typical deep power-down current and 6 mA active read current at 20 MHz. Its low-power profile enables multi-year operation in coin-cell–powered sensors or remote controllers, especially when combined with HOLD pin usage to pause SPI activity without full deselection.
What is the purpose of the OTP security register in the AT25F512B-MAH-T?
The AT25F512B-MAH-T includes a 128-byte OTP security register: the first 64 bytes are user-programmable (one-time only) for device serialization or key storage, while the last 64 bytes contain factory-programmed unique identifiers. This enables secure boot authentication, electronic serial number binding, and tamper-resistant key management without adding discrete secure elements to the BOM.
AT25F512B-MAH-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 8-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 512Kbit
- Memory Organization:
- 64K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 70 MHz
- Write Cycle Time - Word, Page:
- 15µs, 5ms
- Access Time:
- -
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-UDFN (2x3)
AT25F512B-MAH-T FAQ
1.How can I place an order for AT25F512B-MAH-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25F512B-MAH-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25F512B-MAH-T reliable?
The price and inventory of AT25F512B-MAH-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25F512B-MAH-T is usually 5 days.
3.What payment methods are accepted for AT25F512B-MAH-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25F512B-MAH-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25F512B-MAH-T?
AT25F512B-MAH-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25F512B-MAH-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25F512B-MAH-T?
For technical support, including AT25F512B-MAH-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25F512B-MAH-T requirements.
6.How does Aetrix verify that AT25F512B-MAH-T is sourced from the original manufacturer or authorized distributors?
All AT25F512B-MAH-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25F512B-MAH-T meets industry standards.
7.What is the process for return or replacement of AT25F512B-MAH-T?
All AT25F512B-MAH-T units undergo pre-shipment inspection (PSI). If there is an issue with AT25F512B-MAH-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25F512B-MAH-T part is unused and in its original packaging.
Return procedure for AT25F512B-MAH-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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