Renesas AT25PE20-MHN-Y

Overview

AT25PE20-MHN-Y from Adesto Technologies is a 2-Mbit serial Flash memory with SPI interface, 1.65V–3.6V single-supply operation, 85MHz max clock speed, 6ns clock-to-output time, and configurable 256/264-byte page size. It integrates one 256/264-byte SRAM buffer for E²PROM emulation and supports RapidS™ high-speed read modes for embedded code and data storage in industrial controllers and IoT edge nodes.

For engineers reviewing the AT25PE20-MHN-Y datasheet, AT25PE20-MHN-Y pinout, AT25PE20-MHN-Y application, or AT25PE20-MHN-Y equivalent, key selection criteria include its ultra-low 300nA deep power-down current, flexible erase granularity (page/block/sector/chip), hardware write-protect pin, JEDEC-compliant ID read, and dual-package availability in 8-lead SOIC and 8-pad UDFN.

Technical Context

The AT25PE20-MHN-Y implements a sequential-access DataFlash-L® architecture with dedicated SRAM buffer and self-timed erase/program logic. Its SPI interface supports modes 0 and 3, RapidS™ protocols, and four distinct continuous read opcodes (0Bh, 03h, 01h, E8h) optimized for speed, low power, or legacy compatibility.

Memory organization comprises 1,024 pages of 256 bytes (default) or 264 bytes (customer option), mapped across sectors (32KB), blocks (2KB), and pages (256/264B). Erase operations are fully independent per granularity level, and the Status Register includes RDY/BUSY and EPE (Erase/Program Error) flags for real-time operation monitoring.

Key Specifications

Pinout & Package

AT25PE20-MHN-Y is available in an 8-lead SOIC package (0.208" wide), with pins arranged in standard dual-inline configuration. All signals conform to SPI-3-wire plus control pins (CS, WP, RESET).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Compared with AT25PE20-MHN-Y, W25Q20EW offers higher clock speed but lacks the integrated SRAM buffer and ultra-low-power deep power-down, while MX25L2006E provides broader temperature qualification but sacrifices 3× lower deep power-down current and hardware write protection.

Availability

AT25PE20-MHN-Y is available at Aetrix Electronics and suitable for industrial PLC firmware storage, medical device configuration logging, and smart meter tariff table updates requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for AT25PE20-MHN-Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Adesto Technologies (acquired by Dialog Semiconductor in 2020, now part of Renesas Electronics) specialized in low-power, high-reliability nonvolatile memory and analog ICs for industrial and IoT applications.

The AT25PE20-MHN-Y belongs to Adesto's DataFlash-L® family, designed specifically for embedded systems needing fast, flexible, and ultra-low-power serial Flash with integrated SRAM buffer for E²PROM emulation and seamless firmware updates.

FAQ

What is the default page size configuration for AT25PE20-MHN-Y?

The AT25PE20-MHN-Y ships with a default page size of 256 bytes per page, supporting 1,024 pages of main memory. A customer-selectable 264-byte page option is available at order time and affects address bit allocation (19-bit vs. 21-bit addressing), buffer usage, and E²PROM emulation efficiency. This setting is fixed per unit and cannot be changed in-circuit.

Does AT25PE20-MHN-Y support Quad SPI or QPI interface modes?

No, AT25PE20-MHN-Y does not support Quad SPI or QPI. It is a standard 3-wire SPI device (CS, SCK, SI, SO) compatible only with SPI modes 0 and 3. The RapidS™ feature enhances timing performance within this standard interface but does not add additional I/O lines or protocol extensions beyond single-data-rate SPI.

How does the hardware Write Protect (WP) pin interact with software-based sector protection on AT25PE20-MHN-Y?

The WP pin on AT25PE20-MHN-Y functions independently of software sector protection. When WP is asserted low, it globally locks all protected sectors regardless of the Sector Protection Register state. Software protection remains active only when WP is high (or floating, since WP is internally pulled-high). This dual-layer mechanism prevents accidental or malicious writes even if firmware is compromised.

What is the purpose of the 128-byte Security Register in AT25PE20-MHN-Y?

AT25PE20-MHN-Y includes a 128-byte factory-programmed Security Register containing a unique identifier for traceability and anti-counterfeiting. This register is read-only, cannot be erased or rewritten, and is accessible via standard JEDEC ID read commands. It is not user-programmable and serves solely for device authentication and supply-chain verification.

Can AT25PE20-MHN-Y perform true byte-level programming without using the SRAM buffer?

No, AT25PE20-MHN-Y does not support direct byte-level programming into main memory. All program operations require either the Buffer Write + Buffer-to-Memory transfer sequence or the single-command Main Memory Page Program through Buffer (82h opcode). The SRAM buffer is mandatory for any partial-page or byte-alterable write - there is no native "byte program" command targeting main memory directly.