Renesas AT25PE40-SSHN-T

Overview

AT25PE40-SSHN-T from Adesto Technologies (now part of Dialog Semiconductor, acquired by Renesas) is a 4-Mbit serial Flash memory with dual SRAM buffers, SPI interface, and RapidS™ high-speed operation. It delivers up to 85 MHz clock rate, 6 ns clock-to-output time, and supports page sizes of 256 or 264 bytes. Designed for embedded firmware storage and real-time data logging in space-constrained industrial controllers.

For engineers reviewing the AT25PE40-SSHN-T datasheet, AT25PE40-SSHN-T pinout, AT25PE40-SSHN-T application, or AT25PE40-SSHN-T equivalent, this device offers verified buffer-interleaved write capability, ultra-low-power Deep Power-Down (5 µA), JEDEC-standard ID read, and hardware write protection - critical for reliable in-system reprogramming in battery-powered and safety-critical systems.

Technical Context

The AT25PE40-SSHN-T implements a sequential-access DataFlash-L® architecture with two independent 256/264-byte SRAM buffers enabling concurrent receive-and-program operation. Its SPI interface supports modes 0 and 3, with four distinct Continuous Array Read opcodes (01h, 03h, 0Bh, 1Bh) optimized for low-power, standard, high-frequency, and ultra-high-frequency operation respectively.

All erase and program cycles are self-timed and require no external high-voltage supply. Memory organization comprises 2,048 pages (256/264 bytes each), grouped into 64 KB sectors and 2 KB blocks, with full support for Page/Block/Sector/Chip Erase and byte-level programming via Buffer Write + Page Program sequences.

Key Specifications

Pinout & Package

AT25PE40-SSHN-T is packaged in an 8-lead SOIC (0.208" wide), RoHS-compliant, green plastic body. Pin 1 is marked with a notch or dot; pin numbering follows standard SOIC convention (counterclockwise from top-left).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Compared with W25Q40EWSSIG and MX25L4006EM2I-12G, AT25PE40-SSHN-T uniquely combines 1.65 V operation, dual-SRAM buffering, RapidS™ multi-mode reads, and 300 nA Ultra-Deep Power-Down - making it the only choice for energy-constrained, high-reliability embedded systems requiring seamless firmware updates and long-term data integrity.

Availability

AT25PE40-SSHN-T is available at Aetrix Electronics and suitable for industrial automation controllers, medical diagnostics equipment, and battery-powered IoT edge nodes requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for AT25PE40-SSHN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Adesto Technologies developed low-power, high-reliability serial Flash and nonvolatile RAM solutions before its acquisition by Dialog Semiconductor in 2020, now part of Renesas Electronics.

The AT25PE40-SSHN-T belongs to the DataFlash-L® family, engineered specifically for embedded systems demanding ultra-low-power operation, robust in-system reprogrammability, and deterministic timing in harsh industrial environments.

FAQ

What is the operating voltage range of the AT25PE40-SSHN-T?

The AT25PE40-SSHN-T operates from a single 1.65 V to 3.6 V supply across the full industrial temperature range (-40°C to +85°C). This wide range allows direct integration with both 1.8 V and 3.3 V microcontrollers without level-shifting circuitry, reducing BOM cost and PCB area. The AT25PE40-SSHN-T maintains full functionality-including RapidS™ read modes and buffer operations-across this entire voltage window.

Does the AT25PE40-SSHN-T support true concurrent read-while-write operation?

No, the AT25PE40-SSHN-T does not support simultaneous read-from-main-memory and write-to-main-memory. However, it enables true concurrent operation via its dual SRAM buffers: while one buffer is being loaded via Buffer Write, the other can be programmed into main memory using Buffer-to-Main-Memory Page Program - verified in the DS-25PE40-142D datasheet Section 6.2. This interleaving eliminates write stalls in continuous data streams, which the AT25PE40-SSHN-T implements without requiring external arbitration logic.

What package type is used for the AT25PE40-SSHN-T?

The AT25PE40-SSHN-T uses an 8-lead SOIC package with 0.208" body width (standard JEDEC MS-012AC), RoHS-compliant and halogen-free. The "SSHN-T" suffix explicitly denotes this SOIC variant; it is not offered in DFN or other footprints. Pin 1 is identified by a notch or dot, and the metal pad on bottom (present in UDFN variants) is absent - confirming the SOIC mechanical form factor of the AT25PE40-SSHN-T.

How does the AT25PE40-SSHN-T handle power-down modes?

The AT25PE40-SSHN-T offers three power-down states: Standby (25 µA typical), Deep Power-Down (5 µA typical), and Ultra-Deep Power-Down (300 nA typical). Entry is controlled via instruction (0xB9 for Deep, 0x94 for Ultra-Deep); exit requires CS high followed by wake-up command. All retain memory contents and register states. The AT25PE40-SSHN-T achieves lowest quiescent current among 4-Mbit serial Flash devices in its class, critical for coin-cell-powered applications.

Is the AT25PE40-SSHN-T compatible with standard SPI controllers?

Yes, the AT25PE40-SSHN-T is fully SPI Mode 0 and Mode 3 compatible, supporting standard opcodes (e.g., 0x03 for Read, 0x06 for Write Enable) and JEDEC Manufacturer/Device ID read (0x9F). It requires no proprietary drivers or timing adjustments. Host systems using generic SPI peripherals - including STM32 HAL, Nordic nRF SDK, and Linux spidev - can interface directly with the AT25PE40-SSHN-T using documented command sequences from DS-25PE40-142D.