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Renesas AT25PE80-MHN-T
- Part No.:
- AT25PE80-MHN-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-UDFN Exposed Pad
- Datasheet:
-
AT25PE80-MHN-T.pdf
- Description:
- IC FLASH 8MBIT SPI 85MHZ 8UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,400
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Product details
Overview
AT25PE80-MHN-T from Microchip Technology is an 8-Mbit serial Flash memory with SPI interface, RapidS™ support up to 85 MHz, dual 256/264-byte SRAM buffers, and page/block/sector/chip erase options. It operates from 1.7V–3.6V and targets embedded firmware storage, voice/image buffering, and E²PROM emulation in industrial controllers and IoT edge nodes.
For engineers reviewing the AT25PE80-MHN-T datasheet, AT25PE80-MHN-T pinout, AT25PE80-MHN-T application, or AT25PE80-MHN-T equivalent, key selection criteria include its 6 ns clock-to-output time, 300 nA ultra-deep power-down current, user-configurable 256/264-byte page size, and hardware write-protect (WP) pin for sector-level data integrity.
Technical Context
The AT25PE80-MHN-T implements a sequential-access DataFlash®-Lite architecture with two independent SRAM buffers enabling concurrent receive-and-reprogram operation. Its SPI interface supports modes 0 and 3, with four distinct continuous read opcodes (01h, 03h, 0Bh, 1Bh) optimized for low-power, standard, high-frequency, and legacy timing.
Memory organization comprises 4,096 pages of 256 bytes (default) or 264 bytes (customer-selectable), totaling 8,650,752 bits. Erase granularity includes page (256/264 B), block (2 KB), sector (64 KB), and chip (8 Mbit), all self-timed without external high-voltage programming.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 8,650,752 bits (8-Mbit) organized as 4,096 pages |
| Page size | 256 bytes (default) or 264 bytes (customer-selectable); determines address bit count (20 vs 21 bits) |
| Max clock frequency | 85 MHz for RapidS™ read operations; enables high-throughput streaming in audio/video buffers |
| Read latency | 6 ns max clock-to-output (tV); critical for real-time deterministic response in control loops |
| Power-down current | 300 nA typical ultra-deep power-down; extends battery life in always-on sensor nodes |
| Erase endurance | 100,000 program/erase cycles per page; supports frequent firmware updates in field-deployed devices |
| Data retention | 20 years at +85°C; meets long-lifecycle requirements for industrial automation hardware |
Pinout & Package
AT25PE80-MHN-T is supplied in an 8-pad Ultra-thin DFN package (5 × 6 × 0.6 mm) with exposed thermal pad (non-connected). Pin functions are identical to the SOIC variant but mapped to a compact surface-mount footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; initiates command sequence on high-to-low transition; holds device in standby when deasserted |
| SCK | Serial Clock | Input clock; latches SI data on rising edge, clocks SO data on falling edge; defines maximum interface speed |
| SI | Serial Input | Command/address/data input; ignored when CS is high; MSB-first protocol alignment |
| SO | Serial Output | Data output; tri-stated when CS is high; synchronized to SCK falling edge |
| WP | Write Protect | Hardware lock for sector protection; overrides software protection; internally pulled-high; optional GND tie |
| RESET | Reset | Active-low hard reset; terminates ongoing operation and clears internal state machine; recommended tied high if unused |
| VCC | Supply Voltage | 1.7V–3.6V single supply; powers all operations including erase/program; invalid voltage causes spurious behavior |
| GND | Ground Reference | System ground return; required for stable biasing and noise immunity; must be low-impedance connection |
Key Features
| Feature | Design Value |
|---|---|
| Dual SRAM buffers (256/264 B each) | Enables interleaved streaming: receive new data into one buffer while reprogramming main array from the other |
| RapidS™ high-speed read (up to 85 MHz) | Reduces firmware load time by >3× vs standard SPI Flash; supports real-time code execution from XIP-capable hosts |
| Flexible erase hierarchy | Page (256/264 B), block (2 KB), sector (64 KB), and chip (8 Mbit) erases allow granular wear leveling and partial updates |
| Low-power read option (≤15 MHz) | Reduces active current to 7 mA typical; ideal for energy-constrained applications like portable medical monitors |
| 128-byte factory-programmed security register | Stores unique device identifier for secure boot binding and anti-cloning; immutable and tamper-resistant |
Applications
| Firmware Storage | Audio Buffering |
|---|---|
|
Use Scenario: Storing boot code and application firmware in microcontroller-based industrial PLCs requiring field-upgradable logic. IC Role / Device Role / Timing Role: Nonvolatile program memory accessed via SPI during cold start and OTA update; supports byte-alterable E²PROM emulation. Use Value: Page-erase capability enables patch-level updates without full chip reflash; 20-year data retention ensures reliability over equipment lifetime. |
Use Scenario: Capturing and buffering voice samples in smart speaker edge nodes before cloud upload. IC Role / Device Role / Timing Role: High-bandwidth sequential data sink using RapidS™ 85 MHz reads; dual buffers absorb microphone stream while flash writes complete. Use Value: 6 ns tV and continuous-read wraparound eliminate inter-sample gaps; ultra-deep power-down (300 nA) preserves battery between wake events. |
| Secure Device Identity | IoT Sensor Node Logging |
|
Use Scenario: Binding cryptographic keys to hardware identity in TLS-enabled gateways for zero-touch provisioning. IC Role / Device Role / Timing Role: Source of immutable, factory-programmed 128-byte UID; accessed via JEDEC ID read during secure boot handshake. Use Value: Eliminates need for external secure element; UID is fused at wafer test and cannot be overwritten or cloned. |
Use Scenario: Local logging of temperature/humidity readings in battery-powered environmental sensors deployed for 5+ years. IC Role / Device Role / Timing Role: Low-power nonvolatile storage with sector-erase durability; withstands 100K+ write cycles across rotating log sectors. Use Value: 25 µA standby current and 300 nA deep power-down extend coin-cell life beyond 7 years; industrial temp range (−40°C to +85°C) ensures outdoor reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT25SF041-SSHD-B | 4-Mbit density, no SRAM buffers, 133 MHz max clock, 8-lead SOIC only | Lacks dual-buffer streaming; suited for simpler code storage where throughput >85 MHz is needed but interleaving is unnecessary | Select when higher clock speed is prioritized over buffer-assisted streaming and density can be halved |
| W25Q80DVSSIG | 8-Mbit, no configurable page size, no factory UID register, 100K endurance, 8-lead SOIC/UDFN | Missing 128-byte security register and 264-byte page option; uses standard quad-SPI command set instead of RapidS™ | Choose for cost-sensitive designs needing basic SPI Flash compatibility without advanced security or buffer features |
Compared with AT25PE80-MHN-T, AT25SF041-SSHD-B trades buffer functionality and page configurability for higher clock rate and lower density, while W25Q80DVSSIG omits both the factory UID and dual-buffer architecture-making AT25PE80-MHN-T uniquely suited for secure, streaming-aware embedded systems requiring long-term data integrity.
Availability
AT25PE80-MHN-T is available at Aetrix Electronics and suitable for industrial control firmware storage, edge-AI audio buffering, and secure device identity management requiring stable component supply across multi-year production cycles.
Supply support for AT25PE80-MHN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog, FPGA, and memory solutions for industrial, automotive, and communications markets.
The AT25PE80-MHN-T belongs to Microchip's DataFlash®-Lite family, designed specifically for high-reliability, low-pin-count serial Flash applications demanding concurrent read/write, rapid streaming, and embedded security features.
FAQ
What is the default page size configuration for AT25PE80-MHN-T?
The AT25PE80-MHN-T ships with a default page size of 256 bytes, supporting 20-bit addressing (A19–A0). The 264-byte page option is customer-selectable during ordering and requires corresponding firmware adaptation to use the extended 21-bit address space (PA11–PA0 + BA8–BA0). This setting is fixed per unit and cannot be changed in-system.
Does AT25PE80-MHN-T support true byte-level programming without page erase?
No. AT25PE80-MHN-T does not support true byte-level programming. All writes require either Buffer Write followed by Buffer-to-Main-Memory Page Program (with or without built-in erase), or direct Byte/Page Program into main memory. The latter still operates within page boundaries and may require pre-erasure depending on target page state.
How is the 128-byte security register in AT25PE80-MHN-T accessed and protected?
The 128-byte security register in AT25PE80-MHN-T is factory-programmed with a unique identifier and is read-only via dedicated JEDEC-standard commands. It resides in a physically isolated memory region with no write-enable path-neither software commands nor hardware pins (including WP) can modify its contents after manufacturing.
Can AT25PE80-MHN-T operate reliably at 1.7V during program/erase cycles?
Yes. AT25PE80-MHN-T is fully specified for program, erase, and read operations across the entire 1.7V–3.6V VCC range. At 1.7V, typical active read current is 7 mA and program/erase times increase within datasheet limits (e.g., tEP ≤ 25 ms), maintaining functional integrity without derating.
What is the function of the exposed metal pad on the bottom of the AT25PE80-MHN-T UDFN package?
The exposed metal pad on the AT25PE80-MHN-T UDFN package is not electrically connected to any internal node. It may be left floating or soldered to PCB ground for improved thermal dissipation-no electrical reference or biasing is required. Thermal performance testing confirms no reliability impact whether connected or not.
AT25PE80-MHN-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 8Mbit
- Memory Organization:
- 256 Bytes x 4096 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 85 MHz
- Write Cycle Time - Word, Page:
- 8µs, 4ms
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-UDFN (5x6)
AT25PE80-MHN-T FAQ
1.How can I place an order for AT25PE80-MHN-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25PE80-MHN-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25PE80-MHN-T reliable?
The price and inventory of AT25PE80-MHN-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25PE80-MHN-T is usually 5 days.
3.What payment methods are accepted for AT25PE80-MHN-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25PE80-MHN-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25PE80-MHN-T?
AT25PE80-MHN-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25PE80-MHN-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25PE80-MHN-T?
For technical support, including AT25PE80-MHN-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25PE80-MHN-T requirements.
6.How does Aetrix verify that AT25PE80-MHN-T is sourced from the original manufacturer or authorized distributors?
All AT25PE80-MHN-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25PE80-MHN-T meets industry standards.
7.What is the process for return or replacement of AT25PE80-MHN-T?
All AT25PE80-MHN-T units undergo pre-shipment inspection (PSI). If there is an issue with AT25PE80-MHN-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25PE80-MHN-T part is unused and in its original packaging.
Return procedure for AT25PE80-MHN-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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