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Renesas AT25XE011-MAHN-T
- Part No.:
- AT25XE011-MAHN-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-UFDFN Exposed Pad
- Datasheet:
-
AT25XE011-MAHN-T.pdf
- Description:
- IC FLASH 1MBIT SPI 104MHZ 8UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,800
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Product details
Overview
AT25XE011-MAHN-T from Renesas Electronics is a 1-Mbit SPI serial flash memory IC optimized for ultra-low-energy code and data storage in IoT edge nodes and battery-powered industrial sensors. It operates from 1.65 V to 3.6 V, supports SPI Modes 0/3 and Dual-Output Read at up to 104 MHz, and delivers 6 ns clock-to-output timing. Its granular erase architecture (256-byte page, 4-kByte/32-kByte blocks) enables efficient over-the-air firmware updates.
For engineers reviewing the AT25XE011-MAHN-T datasheet, AT25XE011-MAHN-T pinout, AT25XE011-MAHN-T application, or AT25XE011-MAHN-T equivalent, key selection criteria include its 200 nA ultra-deep power-down current, 128-byte OTP security register with factory-programmed unique ID, JEDEC-standard device identification, and hardware write protection via WP pin.
Technical Context
The AT25XE011-MAHN-T implements a dual-I/O read interface where both SI and SO pins function as outputs during Dual-Output Read commands, doubling data throughput per SCK cycle. Its control logic supports full SPI command set compliance including byte/page program, uniform block erases, chip erase, and status register access with byte-2 extension.
Erase architecture is segmented into 256-byte pages and uniform 4-kByte and 32-kByte blocks, enabling precise partitioning of firmware code and runtime data without cross-contamination. Protection is enforced via hardware WP pin and software-configurable status register bits (BPL, BP0–BP2), allowing sector-level locking independent of power state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Mbit (131,072 bytes) organized as 512 × 256-byte pages for fine-grained firmware/data partitioning. |
| Supply Voltage | 1.65 V to 3.6 V - enables direct interfacing with 1.8 V and 3.3 V MCUs without level shifters. |
| Max Clock Frequency | 104 MHz - supports high-speed boot code loading and OTA update streaming. |
| Read Latency | 6 ns clock-to-output (tV) - minimizes CPU wait states during instruction fetch or configuration reads. |
| Erase Granularity | 256-byte page / 4-kByte block / 32-kByte block - reduces wasted space vs. legacy 64-kByte-only flash. |
| Power-Down Current | 200 nA typical ultra-deep power-down - extends multi-year battery life in sensor endpoints. |
| Endurance & Retention | 100,000 program/erase cycles and 20-year data retention - validated for field-deployed firmware storage. |
Pinout & Package
AT25XE011-MAHN-T is packaged in an 8-lead SOIC (150-mil) with standard SPI pinout and hardware control signals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; must transition low before command start and high after completion - controls device selection and standby entry. |
| SCK | Serial Clock | Master-generated clock; rising edge latches input (SI), falling edge clocks output (SO/SI in dual mode). |
| SI (I/O0) | Serial Input / Dual-Output Data 0 | Input for commands/addresses; becomes output (I/O0) during Dual-Output Read to deliver LSB-aligned data stream. |
| SO (I/O1) | Serial Output / Dual-Output Data 1 | Primary output for standard reads; remains output (I/O1) in Dual-Output Read to deliver MSB-aligned data stream. |
| WP | Write Protect | Active-low hardware lock; asserts physical protection of status register and memory sectors when pulled low. |
| HOLD | Communication Hold | Active-low pause signal; suspends ongoing transfers without deselecting CS or resetting internal state. |
| VCC | Power Supply | Single 1.65–3.6 V supply - eliminates need for charge pumps or auxiliary voltages for programming/erasing. |
| GND | Ground Reference | System ground return path - required for stable SPI signaling and low-noise read operations. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-Output Read Support | Enables 2-bit-per-cycle data transfer using SI+SO pins, doubling effective read bandwidth vs. standard SPI. |
| OTP Security Register | 128-byte one-time programmable area with 64-byte factory-unique ID and 64-byte user space for secure device binding. |
| Flexible Erase Architecture | Independent 256-byte page, 4-kByte, and 32-kByte erase commands allow optimal memory utilization for mixed code/data workloads. |
| Ultra-Low Power States | 200 nA ultra-deep power-down and 4.5 µA deep power-down reduce quiescent consumption in always-on sensor nodes. |
| Hardware Write Protection | WP pin provides physical, non-volatile lock of protected sectors - immune to software corruption or reset glitches. |
Applications
| Smart Meter Firmware Storage | Industrial PLC Configuration Memory |
|---|---|
Use Scenario: Storing firmware images and calibration tables in battery-backed utility meters deployed in remote locations. IC Role / Device Role / Timing Role: Non-volatile code storage with fast read access for secure boot and encrypted OTA updates. Use Value: 256-byte page erase enables patch-level updates without erasing full firmware, preserving meter uptime and reducing radio transmission time. | Use Scenario: Retaining I/O mapping, PID tuning parameters, and safety logic in programmable logic controllers operating in harsh environments. IC Role / Device Role / Timing Role: Reliable configuration storage with hardware write protection to prevent accidental overwrite during runtime. Use Value: WP pin-based locking ensures critical parameters remain immutable during power cycling or EMI events, meeting IEC 61131-3 integrity requirements. |
| Wearable Health Sensor Boot Memory | Wireless Gateway OTA Update Cache |
Use Scenario: Holding bootloader and BLE stack firmware in compact, energy-constrained medical wearables powered by coin-cell batteries. IC Role / Device Role / Timing Role: Low-voltage (1.65 V) boot memory supporting rapid initialization and minimal active current (3.5 mA typical read). Use Value: 200 nA ultra-deep power-down extends shelf life and operational runtime between charges, critical for FDA-cleared devices. | Use Scenario: Caching firmware fragments for distributed edge gateways performing concurrent OTA updates across multiple end-node subnets. IC Role / Device Role / Timing Role: High-throughput (104 MHz) dual-output read buffer enabling parallel download and verification. Use Value: Dual-Output Read cuts firmware validation time by 50% vs. single-I/O flash, accelerating gateway update cycles and reducing network congestion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q01JV-IQ | 1-Mbit density, 133 MHz max clock, no OTP register, 100 µA deep power-down (vs. 4.5 µA) | Lacks factory-unique ID and ultra-low-power states - unsuitable for battery-critical or secure identity use cases | Select when maximum clock speed is prioritized over power efficiency and security features |
| Micron MT25QL01GBBB8E12-0SIT | 1-Gbit density (1000× larger), quad-SPI only, 25 µA deep power-down, no 256-byte page erase | Over-specified capacity and interface complexity - requires layout changes and driver adaptation | Select only when scaling to multi-megabyte firmware storage with QSPI host support |
Compared with W25Q01JV-IQ and MT25QL01GBBB8E12-0SIT, the AT25XE011-MAHN-T uniquely balances ultra-low quiescent current, fine-grain erase, and integrated security - making it optimal for constrained-edge devices where power, footprint, and trust are co-optimized.
Availability
AT25XE011-MAHN-T is available at Aetrix Electronics and suitable for smart meter firmware storage, industrial PLC configuration memory, wearable health sensor boot memory, and wireless gateway OTA update cache requiring stable component supply across long-lifecycle deployments.
Supply support for AT25XE011-MAHN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.
The AT25XE011 product line targets ultra-low-energy serial flash requirements in battery-operated edge devices, emphasizing granular erase efficiency, secure identity, and seamless integration with 1.8 V/3.3 V microcontrollers.
FAQ
What is the operating voltage range for the AT25XE011-MAHN-T?
The AT25XE011-MAHN-T operates from 1.65 V to 3.6 V, supporting direct connection to both 1.8 V and 3.3 V microcontroller I/O domains without level-shifting circuitry. This wide range accommodates brown-out conditions and battery voltage sag while maintaining full functionality including program, erase, and read operations - all without requiring auxiliary voltage supplies.
Does the AT25XE011-MAHN-T support Dual-Output Read, and how does it improve performance?
Yes, the AT25XE011-MAHN-T supports Dual-Output Read using both SI and SO pins as data outputs, delivering two bits per SCK cycle. This doubles effective read throughput versus standard SPI, reducing firmware load time and OTA update latency. The feature is activated via dedicated 03h/3Bh opcodes and requires host controller support for dual-I/O timing - confirmed in the AT25XE011-MAHN-T datasheet Section 5.1 and Figure 9.
How is hardware write protection implemented on the AT25XE011-MAHN-T?
Hardware write protection on the AT25XE011-MAHN-T is controlled by the active-low WP pin, which physically locks protected memory sectors and the status register when asserted. Unlike software-only protection, this mechanism persists across power cycles and cannot be overridden by command sequences. The WP pin is internally pulled-high, so external connection to VCC disables protection unless intentionally grounded - a design verified in Table 1 and Section 9.4 of the AT25XE011-MAHN-T datasheet.
What is the purpose and structure of the OTP security register in the AT25XE011-MAHN-T?
The AT25XE011-MAHN-T includes a 128-byte OTP security register: 64 bytes factory-programmed with a unique device identifier (ESN), and 64 bytes user-programmable for keys or certificates. Once written, OTP contents are permanently locked - providing tamper-resistant device identity and secure boot root-of-trust. Programming requires the Program OTP Security Register command (AH), and reading uses the Read OTP Security Register command (B1h), both detailed in Sections 10.1–10.2 of the AT25XE011-MAHN-T datasheet.
What erase options does the AT25XE011-MAHN-T provide, and why is granularity important?
The AT25XE011-MAHN-T supports 256-byte page erase, uniform 4-kByte block erase, 32-kByte block erase, and full chip erase. Granular page erase prevents unnecessary erasure of adjacent firmware or data - critical for over-the-air updates where only small patches change. This avoids the 64-kByte minimum erase common in legacy flash, reducing update time, power consumption, and wear on unrelated memory regions - a key advantage confirmed in the AT25XE011-MAHN-T Description section (Page 6).
AT25XE011-MAHN-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 104 MHz
- Write Cycle Time - Word, Page:
- 12µs, 3ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-UDFN (2x3)
AT25XE011-MAHN-T FAQ
1.How can I place an order for AT25XE011-MAHN-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25XE011-MAHN-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25XE011-MAHN-T reliable?
The price and inventory of AT25XE011-MAHN-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25XE011-MAHN-T is usually 5 days.
3.What payment methods are accepted for AT25XE011-MAHN-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25XE011-MAHN-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25XE011-MAHN-T?
AT25XE011-MAHN-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25XE011-MAHN-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25XE011-MAHN-T?
For technical support, including AT25XE011-MAHN-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25XE011-MAHN-T requirements.
6.How does Aetrix verify that AT25XE011-MAHN-T is sourced from the original manufacturer or authorized distributors?
All AT25XE011-MAHN-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25XE011-MAHN-T meets industry standards.
7.What is the process for return or replacement of AT25XE011-MAHN-T?
All AT25XE011-MAHN-T units undergo pre-shipment inspection (PSI). If there is an issue with AT25XE011-MAHN-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25XE011-MAHN-T part is unused and in its original packaging.
Return procedure for AT25XE011-MAHN-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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