Renesas AT25XE011-SSHN-B

Overview

AT25XE011-SSHN-B from Renesas Electronics is a 1-Mbit SPI serial flash memory IC optimized for ultra-low-power, code+data storage in IoT and industrial edge devices. It operates from 1.65 V to 3.6 V, supports SPI Modes 0/3 and Dual-Output Read, delivers 104 MHz max clock frequency with 6 ns clock-to-output delay, and features granular erase (256-byte page, 4-kByte/32-kByte blocks) for efficient firmware updates.

For engineers reviewing the AT25XE011-SSHN-B datasheet, AT25XE011-SSHN-B pinout, AT25XE011-SSHN-B application, or AT25XE011-SSHN-B equivalent, key selection considerations include its 200 nA ultra-deep power-down current, 128-byte OTP security register with factory-programmed unique ID, hardware write protection via WP pin, and JEDEC-standard manufacturer/device ID read capability.

Technical Context

The AT25XE011-SSHN-B implements a dual-I/O read architecture where both SI (I/O0) and SO (I/O1) pins output data simultaneously on each SCK falling edge, doubling read throughput versus standard SPI. Its control logic integrates hardware-based sector locking via the WP pin and software-configurable status register bits (BPL, BP0–BP2) for flexible memory protection.

Internally, the device uses a hierarchical erase architecture: 256-byte pages enable fine-grained data logging; uniform 4-kByte and 32-kByte blocks support modular firmware partitioning; full-chip erase provides recovery capability. All program/erase operations are self-timed and automatically verified, with failure reporting via status register flags.

Key Specifications

Pinout & Package

AT25XE011-SSHN-B is packaged in an 8-lead SOIC (150-mil) with industry-standard pinout and RoHS-compliant lead finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial flash memory applications.

Compared with W25Q10EW and MT25QL01GBBB8E12-0SIT, the AT25XE011-SSHN-B uniquely balances ultra-low power (200 nA), dual-output read acceleration, and integrated security (OTP + hardware WP) in a compact 8-SOIC package - making it optimal for constrained, battery-powered, and security-aware embedded designs.

Availability

AT25XE011-SSHN-B is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, wireless sensor nodes, and medical wearables requiring stable component supply and long-term lifecycle support.

Supply support for AT25XE011-SSHN-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The AT25XE011-SSHN-B belongs to Renesas' ultra-low-power serial flash product line, engineered specifically for energy-constrained, always-on edge devices needing secure, reliable, and granular non-volatile storage.

FAQ

What is the operating voltage range of the AT25XE011-SSHN-B?

The AT25XE011-SSHN-B operates from 1.65 V to 3.6 V across its full temperature range (-40 °C to +85 °C). At 1.65–1.7 V, operation is guaranteed from -10 °C to +85 °C; above 1.7 V, full industrial temperature range is supported. This single-supply design eliminates external regulators or level shifters when interfacing with 1.8 V or 3.3 V host MCUs.

Does the AT25XE011-SSHN-B support dual-output read mode, and how does it improve performance?

Yes, the AT25XE011-SSHN-B supports Dual-Output Read using the 3Bh command, where both SI (I/O0) and SO (I/O1) pins output data simultaneously on each SCK falling edge. This delivers twice the data rate of standard SPI read operations, reducing firmware load time and OTA update latency - critical for responsive boot sequences in resource-constrained IoT endpoints.

How is memory protection implemented on the AT25XE011-SSHN-B?

The AT25XE011-SSHN-B implements dual-layer memory protection: hardware-based locking via the WP pin (active-low) for immediate sector lockdown, and software-configurable status register bits (BPL, BP0–BP2) for flexible block-level protection. The WP pin can be externally tied to GND or controlled dynamically, enabling robust defense against accidental or malicious writes during field operation.

What is the purpose and structure of the OTP security register in the AT25XE011-SSHN-B?

The AT25XE011-SSHN-B includes a 128-byte One-Time Programmable (OTP) security register: the first 64 bytes are factory-programmed with a globally unique identifier for device serialization, and the remaining 64 bytes are user-programmable for storing cryptographic keys, calibration constants, or electronic serial numbers. Once written, OTP contents cannot be altered - ensuring immutable identity and secure key binding.

What erase options does the AT25XE011-SSHN-B provide, and why is granularity important?

The AT25XE011-SSHN-B supports four erase modes: 256-byte page, 4-kByte block, 32-kByte block, and full-chip. Granular page erase minimizes wasted space when updating small data segments (e.g., sensor logs), while uniform block sizes allow clean separation of firmware, configuration, and user data - improving software maintainability and reducing MCU overhead during field updates.