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Renesas AT25XE011-SSHN-T
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- Part No.:
- AT25XE011-SSHN-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AT25XE011-SSHN-T.pdf
- Description:
- IC FLASH 1MBIT SPI 104MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,925
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Product details
Overview
AT25XE011-SSHN-T from Renesas Electronics is a 1-Mbit SPI serial flash memory IC optimized for ultra-low-energy IoT and industrial embedded systems. It operates from 1.65 V to 3.6 V, supports SPI Modes 0/3 and Dual-Output Read, delivers 104 MHz max clock frequency with 6 ns clock-to-output delay, and enables efficient code+data storage via granular 256-byte page and 4-kByte block erase.
For engineers reviewing the AT25XE011-SSHN-T datasheet, AT25XE011-SSHN-T pinout, AT25XE011-SSHN-T application, or AT25XE011-SSHN-T equivalent, key selection factors include its 200 nA ultra-deep power-down current, 128-byte OTP security register with factory-unique 64-byte ID, JEDEC-standard ID read, and hardware write protection via WP pin.
Technical Context
The AT25XE011-SSHN-T implements a dual-I/O read architecture where both SI (I/O0) and SO (I/O1) pins output data simultaneously on each SCK falling edge, doubling read throughput versus standard SPI. Its erase hierarchy-256-byte page, 4-kByte block, 32-kByte block, and full-chip-enables precise firmware update partitioning without over-erasing adjacent code or configuration data.
Internal control logic integrates hardware-based sector locking via the WP pin and software-controlled status register bits (BPL, SEC, SRWD), while the OTP security register provides immutable device serialization and secure key storage. Power management includes Deep Power-Down (4.5 µA) and Ultra-Deep Power-Down (200 nA) modes with dedicated entry/exit commands.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Mbit (131,072 bytes) organized as 512 pages × 256 bytes; supports byte-level addressing for flexible firmware/data layout. |
| Supply Voltage | 1.65 V – 3.6 V single supply; eliminates need for external voltage translators in battery-powered or multi-rail systems. |
| Max Clock Frequency | 104 MHz; enables high-speed boot code loading and OTA update verification in time-critical applications. |
| Read Latency | 6 ns clock-to-output (tV); reduces MCU wait states and improves real-time deterministic response. |
| Erase Granularity | 256-byte page, 4-kByte block, 32-kByte block, full chip; minimizes wasted space during partial firmware updates. |
| OTP Security Register | 128-byte one-time programmable register: 64 bytes factory-programmed unique ID + 64 bytes user-programmable. |
| Power-Down Current | 200 nA typical ultra-deep power-down; extends battery life in always-on sensor nodes and wearables. |
| Endurance & Retention | 100,000 program/erase cycles and 20-year data retention; validated for long-life industrial deployments. |
Pinout & Package
AT25XE011-SSHN-T is packaged in an 8-lead SOIC (150-mil) with industry-standard pinout and RoHS-compliant lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable signal; must transition low-to-high to complete any command, including self-timed erase/program operations. |
| SCK | Serial Clock | Master-generated clock; data latched on rising edge (SI), output on falling edge (SO/SI in Dual-Read mode). |
| SI (I/O0) | Serial Input / Dual-Read Output | Input for commands/addresses/data; becomes output (I/O0) during Dual-Output Read to deliver LSB of each byte. |
| SO (I/O1) | Serial Output / Dual-Read Output | Primary output for standard reads; remains output (I/O1) in Dual-Read mode to deliver MSB of each byte. |
| WP | Write Protect | Hardware lock control; low state enables hardware-based sector protection independent of status register settings. |
| HOLD | Communication Pause | Active-low pause signal; suspends SPI transfer without deselecting device or resetting internal state. |
| VCC | Power Supply | 1.65–3.6 V input; powers all internal logic and memory array; no separate programming voltage required. |
| GND | Ground Reference | System ground return path; required for stable operation and noise immunity in mixed-signal environments. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-Output Read Mode | Simultaneous 2-bit output per SCK cycle via SI+SO pins, doubling effective read bandwidth without increasing clock rate. |
| Granular Erase Architecture | 256-byte page erase enables atomic updates of small configuration tables without disturbing adjacent firmware sections. |
| Hardware Write Protection | WP pin provides tamper-resistant, non-volatile sector locking that persists across power cycles and resets. |
| Ultra-Low Power States | 200 nA ultra-deep power-down current allows multi-year battery operation in maintenance-free edge sensors. |
| Factory-Unique Device ID | 64-byte factory-programmed identifier in OTP register enables secure device authentication and inventory tracking. |
| JEDEC Standard ID Read | Manufacturer and device ID accessible via standardized command (90h), ensuring interoperability with generic flash drivers. |
Applications
| Smart Meter Firmware Storage | Industrial PLC Configuration Backup |
|---|---|
Use Scenario: Storing firmware images and calibration data in utility-grade electricity meters operating unattended for 15+ years. IC Role / Device Role / Timing Role: Nonvolatile code storage with atomic 256-byte page updates during remote firmware upgrades. Use Value: 20-year data retention and 100,000-cycle endurance ensure field reliability without replacement; 200 nA deep power-down extends battery backup life. |
Use Scenario: Preserving ladder logic configurations and I/O mapping in programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: Secure, fast-access configuration memory supporting hot-swappable module reconfiguration. Use Value: Dual-Output Read at 104 MHz accelerates configuration load times; hardware WP pin prevents accidental overwrite during maintenance. |
| Wireless Sensor Node Boot Memory | Medical Wearable Device Serialization |
Use Scenario: Holding bootloader and BLE stack firmware in coin-cell-powered environmental sensors deployed in remote locations. IC Role / Device Role / Timing Role: Low-voltage (1.65 V) serial flash enabling direct connection to energy-harvesting power supplies. Use Value: 1.65 V minimum supply and 200 nA ultra-deep power-down allow operation from harvested microwatts; 4-kByte block erase isolates stack updates from application code. |
Use Scenario: Storing FDA-compliant unique device identifiers (UDI) and cryptographic keys in Class II wearable health monitors. IC Role / Device Role / Timing Role: Immutable OTP security register providing tamper-evident device serialization and secure key vault. Use Value: Factory-programmed 64-byte unique ID ensures traceability; 128-byte OTP prevents post-manufacture key exposure or cloning. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q01JV-IQ | 1-Mbit SPI flash with Quad I/O support (not Dual-Output only); 3.3 V only (no 1.65 V operation); 8-pin SOIC package. | Lacks ultra-low-voltage operation and 200 nA deep power-down; suited for higher-power host systems with quad interface demand. | Select when Quad I/O bandwidth > Dual-Output Read and system supply ≥ 2.7 V; avoid for sub-1.8 V or battery-critical designs. |
| Micron MT25QL01GBBB8E12-0SIT | 1-Gbit density (1000× larger); supports 1.7–2.0 V and 2.7–3.6 V dual ranges; 8-pin SOIC; includes SFDP for auto-configuration. | Over-specified capacity and voltage range; lacks factory-programmed unique ID and same OTP structure. | Choose for scalable future-proofing where density and SFDP compatibility outweigh cost and power advantages of AT25XE011-SSHN-T. |
Compared with W25Q01JV-IQ and MT25QL01GBBB8E12-0SIT, the AT25XE011-SSHN-T uniquely balances ultra-low-voltage operation (1.65 V), nanowatt power-down, factory-unique serialization, and granular 256-byte erasure - making it optimal for constrained, long-life, and security-sensitive embedded endpoints.
Availability
AT25XE011-SSHN-T is available at Aetrix Electronics and suitable for smart meter firmware storage, industrial PLC configuration backup, and wireless sensor node boot memory requiring stable component supply across extended product lifecycles.
Supply support for AT25XE011-SSHN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The AT25XE011-SSHN-T belongs to Renesas' ultra-low-power serial flash memory product line, engineered specifically for energy-constrained, long-lifecycle embedded systems requiring secure, reliable, and granular nonvolatile storage.
FAQ
What is the minimum operating voltage for the AT25XE011-SSHN-T?
The AT25XE011-SSHN-T operates down to 1.65 V across its full temperature range (-10 °C to +85 °C). This enables direct integration with single-cell Li-ion, Li-SOCl₂, or energy-harvesting power sources without level-shifting circuitry. The AT25XE011-SSHN-T maintains full functionality-including Dual-Output Read, 104 MHz operation, and OTP programming-at this minimum voltage.
Does the AT25XE011-SSHN-T support Quad SPI mode?
No, the AT25XE011-SSHN-T does not support Quad SPI. It supports SPI Modes 0 and 3 with standard single-I/O and Dual-Output Read (using SI and SO as simultaneous outputs). Quad I/O capability is absent; the device's interface is strictly dual-line output during read operations. For Quad SPI requirements, alternative flash devices must be evaluated.
How is the 128-byte OTP security register structured in the AT25XE011-SSHN-T?
The AT25XE011-SSHN-T OTP security register comprises 128 bytes: the first 64 bytes are factory-programmed with a globally unique device identifier, and the remaining 64 bytes are user-programmable once. Programming is irreversible and requires the Program OTP Security Register command (4Bh); read access uses command 4Ch. The AT25XE011-SSHN-T OTP register is electrically isolated from main array erase cycles.
What erase options are available on the AT25XE011-SSHN-T?
The AT25XE011-SSHN-T offers four erase granularities: 256-byte page erase (command 02h), 4-kByte block erase (20h), 32-kByte block erase (52h), and full chip erase (60h or C7h). Page erase enables minimal-overhead updates of small configuration tables; block erases target firmware partitions. All erase operations are internally timed and verified, with status reported via the WIP bit.
Can the AT25XE011-SSHN-T be used in automotive applications?
The AT25XE011-SSHN-T is specified for industrial temperature range (-40 °C to +85 °C at 1.7–3.6 V), but it is not AEC-Q100 qualified and lacks automotive-specific reliability testing or qualification documentation. While functionally usable in under-hood or infotainment auxiliary roles, Renesas does not endorse or guarantee AT25XE011-SSHN-T for safety-critical automotive applications. Automotive-grade alternatives should be selected for such use cases.
AT25XE011-SSHN-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 104 MHz
- Write Cycle Time - Word, Page:
- 12µs, 3ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AT25XE011-SSHN-T FAQ
1.How can I place an order for AT25XE011-SSHN-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25XE011-SSHN-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25XE011-SSHN-T reliable?
The price and inventory of AT25XE011-SSHN-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25XE011-SSHN-T is usually 5 days.
3.What payment methods are accepted for AT25XE011-SSHN-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25XE011-SSHN-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25XE011-SSHN-T?
AT25XE011-SSHN-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25XE011-SSHN-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25XE011-SSHN-T?
For technical support, including AT25XE011-SSHN-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25XE011-SSHN-T requirements.
6.How does Aetrix verify that AT25XE011-SSHN-T is sourced from the original manufacturer or authorized distributors?
All AT25XE011-SSHN-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25XE011-SSHN-T meets industry standards.
7.What is the process for return or replacement of AT25XE011-SSHN-T?
All AT25XE011-SSHN-T units undergo pre-shipment inspection (PSI). If there is an issue with AT25XE011-SSHN-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25XE011-SSHN-T part is unused and in its original packaging.
Return procedure for AT25XE011-SSHN-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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