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Renesas AT25XE011-XMHN-B

Part No.:
AT25XE011-XMHN-B
Manufacturer:
Renesas
Category:
Memory
Package:
8-TSSOP (0.173", 4.40mm Width)
Datasheet:
AetrixAT25XE011-XMHN-B.pdf
Description:
IC FLASH 1MBIT SPI 104MHZ 8TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,398

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Product details

Overview

AT25XE011-XMHN-B from Renesas Electronics is a 1-Mbit SPI serial flash memory IC optimized for ultra-low-energy IoT and embedded systems, operating from 1.65 V to 3.6 V, supporting SPI Modes 0/3 and Dual-Output Read at up to 104 MHz, with 6 ns clock-to-output delay and hardware write protection via WP pin - deployed in firmware storage, OTA update buffers, and secure boot code retention.

For engineers reviewing the AT25XE011-XMHN-B datasheet, AT25XE011-XMHN-B pinout, AT25XE011-XMHN-B application, or AT25XE011-XMHN-B equivalent, key selection criteria include dual-read throughput, 256-byte page erase granularity, OTP security register usage, ultra-deep power-down current (200 nA), and compatibility with 1.65 V minimum supply rails in space-constrained industrial sensors and battery-powered edge nodes.

Technical Context

The AT25XE011-XMHN-B implements a flexible erase architecture with three granular levels: 256-byte page, 4-kByte block, and 32-kByte block - enabling efficient code/data co-location without over-erasure. Its Dual-Output Read mode uses both SI and SO pins as data outputs, doubling read bandwidth versus standard SPI read.

It integrates a 128-byte OTP security register (64 bytes factory-programmed unique ID + 64 bytes user-programmable) and supports hardware locking via active-low WP pin, while maintaining JEDEC-standard Manufacturer/Device ID read capability and software-controlled reset - all within a single 1.65–3.6 V supply domain.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size1 Mbit (128 KBytes) - sufficient for bootloader, firmware partitions, and configuration data in compact MCU-based designs.
Supply Voltage1.65 V to 3.6 V - enables direct interface with low-voltage MCUs (e.g., ARM Cortex-M0+, RISC-V) without level-shifting.
Max Clock Frequency104 MHz - delivers high-speed read access for real-time firmware execution and rapid OTA patch loading.
Read Latency6 ns clock-to-output (tV) - minimizes instruction fetch stalls in XIP (execute-in-place) configurations.
Erase Granularity256-byte page / 4-kByte block / 32-kByte block - allows precise firmware delta updates and avoids full-chip erases during field upgrades.
Power-Down Current200 nA ultra-deep power-down (typical) - extends battery life in always-on sensor nodes and wearable devices.
Endurance & Retention100,000 program/erase cycles / 20-year data retention - meets long-lifecycle requirements for industrial gateways and medical telemetry.

Pinout & Package

AT25XE011-XMHN-B is packaged in an 8-lead SOIC (150-mil) - industry-standard surface-mount footprint compatible with automated assembly and reflow processes.

Pin/TerminalCircuit RoleDesign Meaning
CSChip SelectActive-low enable signal; must transition high-to-low to initiate commands and low-to-high to terminate - controls device selection and SO high-impedance state.
SCKSerial ClockMaster-generated clock; rising edge latches SI input, falling edge clocks SO output - supports SPI Modes 0 and 3 only.
SI (I/O0)Serial Input / Dual-Read OutputInput for commands/addresses/data; becomes output (I/O0) during Dual-Output Read to deliver LSB of each byte alongside SO (I/O1).
SO (I/O1)Serial Output / Dual-Read OutputPrimary output for standard reads; remains I/O1 during Dual-Output Read to deliver MSB of each byte in parallel with SI.
WPWrite ProtectActive-low hardware lock; when asserted, prevents status register writes and sector protection changes - ensures firmware integrity against accidental overwrite.
HOLDCommunication HoldActive-low pause signal; suspends ongoing SPI transfers without deselecting device or resetting internal state - useful for interrupt handling in time-critical systems.
VCCPower SupplySingle 1.65–3.6 V supply; powers all logic and memory array - eliminates need for charge pumps or auxiliary voltage rails.
GNDGround ReferenceSystem ground return path; must be low-impedance connection to minimize noise coupling into sensitive SPI timing paths.

Key Features

FeatureDesign Value
Dual-Output Read ModeEnables 2-bit-per-clock read throughput using SI and SO simultaneously - cuts read time by ~50% vs. standard SPI, accelerating firmware validation and OTA verification.
256-Byte Page EraseAllows minimal-impact updates to individual configuration parameters or calibration tables without disturbing adjacent code or data sectors.
128-Byte OTP Security RegisterProvides tamper-resistant storage for unique device identifiers, cryptographic keys, or secure boot hashes - 64 bytes factory-programmed, 64 bytes user-writable once.
Ultra-Deep Power-DownReduces current draw to 200 nA (typical), enabling multi-year operation on coin-cell batteries in wireless sensor networks and asset trackers.
Hardware Write ProtectionWP pin assertion locks protected memory sectors at hardware level - immune to software crashes or malware-induced writes during field deployment.

Applications

Smart Meter Firmware StorageIndustrial Sensor Node Data Logging

Use Scenario: Storing metrology firmware, calibration coefficients, and regulatory compliance data in ANSI C12.19-compliant smart electricity meters.

IC Role / Device Role / Timing Role: Non-volatile code and parameter storage with guaranteed 20-year retention and 100K-cycle endurance under temperature cycling.

Use Value: Enables field-upgradable firmware without meter replacement, leveraging 256-byte page erase to minimize downtime during utility-side OTA deployments.

Use Scenario: Capturing timestamped sensor readings (temperature, humidity, vibration) in IIoT edge nodes powered by primary lithium batteries.

IC Role / Device Role / Timing Role: Low-power data buffer with ultra-deep power-down (200 nA) between sampling intervals and fast wake/read capability (6 ns tV).

Use Value: Extends battery life beyond 10 years by minimizing active current (3.5 mA typical read) and eliminating standby leakage above 25 µA.

Secure Bootloader StorageWireless Module Configuration Storage

Use Scenario: Holding immutable root-of-trust code and public key certificates for secure boot in cellular (LTE-M/NB-IoT) and LoRaWAN modules.

IC Role / Device Role / Timing Role: Trusted firmware vault with hardware write protection (WP pin) and OTP-secured key storage preventing runtime corruption.

Use Value: Prevents unauthorized firmware injection by enforcing hardware-level lock on boot partition - validated via factory-programmed 64-byte unique ID.

Use Scenario: Storing RF calibration data, MAC addresses, and network credentials in compact Wi-Fi/BLE modules used in consumer appliances.

IC Role / Device Role / Timing Role: Compact, low-voltage (1.65 V min) configuration store interfaced directly to 1.8 V host SoCs without level shifters.

Use Value: Reduces BOM count and PCB area by eliminating external voltage translators while maintaining reliable SPI communication at 104 MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial flash memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Winbond W25Q01JV-IQ1 Mbit, 1.7–3.6 V supply, 133 MHz max clock, no Dual-Output Read, 1.5 ms page program (vs. 2 ms), 100K endurance.Lacks Dual-Output Read and ultra-deep power-down (1 µA deep PD vs. 200 nA); higher voltage floor limits use with sub-1.7 V MCUs.Select when maximum read speed is critical and ultra-low-power sleep is secondary; verify host SPI driver supports standard Quad I/O if migrating from Dual-Output.
Micron MT25QL01GBBB8E12-0SIT1 Gbit (not 1 Mbit), 1.7–2.0 V or 2.7–3.6 V dual supply, 133 MHz, Quad SPI, 100K endurance, 20-year retention.1000× larger capacity, incompatible voltage range (no 1.65 V support), requires Quad SPI controller - not drop-in replaceable.Choose only for capacity-scaling scenarios where board redesign accommodates different pinout, voltage rails, and driver stack; not suitable for footprint- or voltage-constrained AT25XE011-XMHN-B replacements.

Compared with W25Q01JV-IQ and MT25QL01GBBB8E12-0SIT, the AT25XE011-XMHN-B uniquely balances ultra-low-voltage operation (1.65 V), dual-read bandwidth, and nanoamp-level power-down - making it optimal for energy-harvesting and coin-cell-powered edge devices where voltage headroom and quiescent current are design-limiting factors.

Availability

AT25XE011-XMHN-B is available at Aetrix Electronics and suitable for smart meter firmware storage, industrial sensor node data logging, secure bootloader storage, and wireless module configuration storage requiring stable component supply across multi-year production cycles.

Supply support for AT25XE011-XMHN-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The AT25XE011-XMHN-B belongs to Renesas' ultra-low-energy serial flash product line, engineered specifically for battery-constrained and energy-harvesting IoT endpoints requiring robust non-volatile storage with minimal voltage and power overhead.

FAQ

What is the minimum operating voltage for the AT25XE011-XMHN-B?

The AT25XE011-XMHN-B operates down to 1.65 V - verified across the full commercial temperature range (-10 °C to +85 °C). This enables direct integration with 1.8 V and lower-voltage MCUs without level-shifting circuitry, unlike alternatives requiring ≥1.7 V. The AT25XE011-XMHN-B maintains full functionality including Dual-Output Read and 104 MHz operation at this minimum rail.

Does the AT25XE011-XMHN-B support Quad SPI mode?

No, the AT25XE011-XMHN-B does not support Quad SPI. It supports standard SPI (single I/O) and Dual-Output Read mode only - where SI and SO function as complementary data outputs during read operations. Quad SPI requires four I/O lines (IO0–IO3), which the AT25XE011-XMHN-B pinout and command set do not implement. The AT25XE011-XMHN-B achieves enhanced throughput solely through its Dual-Output Read capability.

How is the OTP security register structured in the AT25XE011-XMHN-B?

The AT25XE011-XMHN-B contains a 128-byte OTP (One-Time Programmable) Security Register: the first 64 bytes are factory-programmed with a unique device identifier (ESN), and the remaining 64 bytes are user-programmable once. Programming is irreversible and requires specific command sequences (02h for write, 04h for read). This register supports secure boot key storage, device serialization, and anti-counterfeiting - and is protected independently from main array writes.

What erase options are available on the AT25XE011-XMHN-B?

The AT25XE011-XMHN-B offers four erase modes: Byte/Page Erase (1–256 bytes, 2 ms typical), 4-kByte Block Erase (50 ms typical), 32-kByte Block Erase (400 ms typical), and Full Chip Erase. This granular architecture allows targeted updates - for example, modifying a single configuration parameter without erasing adjacent firmware - reducing wear and improving system responsiveness during field updates.

Can the AT25XE011-XMHN-B be used in -40 °C environments?

Yes, the AT25XE011-XMHN-B is rated for operation from -40 °C to +85 °C - but only when supplied with 1.7 V to 3.6 V. At the absolute minimum 1.65 V supply, the specified temperature range is -10 °C to +85 °C. For full industrial temperature compliance, ensure VCC ≥1.7 V in sub-zero applications. All timing, endurance, and retention specifications remain valid across the extended range under these conditions.

AT25XE011-XMHN-B Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-TSSOP (0.173", 4.40mm Width)
Packaging:
Tube
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
SPI
Clock Frequency:
104 MHz
Write Cycle Time - Word, Page:
12µs, 3ms
Access Time:
-
Voltage - Supply:
1.65V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-TSSOP

AT25XE011-XMHN-B FAQ

1.How can I place an order for AT25XE011-XMHN-B through Aetrix?

Please submit a Request for Quotation (RFQ) for AT25XE011-XMHN-B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AT25XE011-XMHN-B reliable?

The price and inventory of AT25XE011-XMHN-B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25XE011-XMHN-B is usually 5 days.

3.What payment methods are accepted for AT25XE011-XMHN-B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25XE011-XMHN-B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AT25XE011-XMHN-B?

AT25XE011-XMHN-B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AT25XE011-XMHN-B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AT25XE011-XMHN-B?

For technical support, including AT25XE011-XMHN-B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25XE011-XMHN-B requirements.

6.How does Aetrix verify that AT25XE011-XMHN-B is sourced from the original manufacturer or authorized distributors?

All AT25XE011-XMHN-B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25XE011-XMHN-B meets industry standards.

7.What is the process for return or replacement of AT25XE011-XMHN-B?

All AT25XE011-XMHN-B units undergo pre-shipment inspection (PSI). If there is an issue with AT25XE011-XMHN-B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AT25XE011-XMHN-B part is unused and in its original packaging.

Return procedure for AT25XE011-XMHN-B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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