Renesas AT25XE161D-SHN-B

Overview

AT25XE161D from Renesas Electronics is a 16-Mbit SPI serial Flash memory IC supporting 1.65 V–3.6 V operation, 133 MHz max clock frequency, quad I/O (1-4-4/XiP), and flexible erase granularity down to 256-byte pages. It serves as non-volatile program storage or eXecute-in-Place (XiP) code memory in resource-constrained embedded systems.

For engineers reviewing the AT25XE161D datasheet, AT25XE161D pinout, AT25XE161D application, or AT25XE161D equivalent, key selection criteria include its ultra-low-power Deep Power-Down (8.2 µA) and Ultra Deep Power-Down (7 nA) modes, Read-Modify-Write command for SRAM-like writes, active status interrupt, and JEDEC-standard SFDP support for automatic configuration.

Technical Context

The AT25XE161D implements a dual-bus architecture with a 256-byte SRAM buffer enabling page programming without prior full-page reads. Its I/O interface dynamically reconfigures pins (I/O0–I/O3) for standard SPI (1-1-1), dual-output (1-1-2), quad-output (1-1-4), quad I/O (1-4-4), or XiP (0-4-4) transfer modes based on command and mode register settings.

Memory protection uses both individual block lock (36h/39h) and global lock (7Eh/98h), while security includes three 128-byte One-Time Programmable registers and a factory-programmed 128-byte unique ID. Status registers 1–6 provide real-time RDY/BSY, write enable, protection, and power mode flags with volatile/non-volatile options.

Key Specifications

Pinout & Package

AT25XE161D-SHN-B is supplied in an 8-pad Ultra-thin DFN package (2 mm × 3 mm × 0.6 mm), RoHS-compliant and halogen-free. Pin assignments are identical across all supported packages (SOIC-8, WLCSP, DFN).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Compared with W25Q16JW and MX25L1633F, AT25XE161D uniquely combines 1.65 V operation, 7 nA UDPD, RMW command, and true 0-4-4 XiP - making it optimal for ultra-low-power, code-execution, and secure parameter storage applications where voltage headroom and power budget are constrained.

Availability

AT25XE161D-SHN-B is available at Aetrix Electronics and suitable for industrial PLCs, IoT sensor nodes, medical wearables, and automotive ADAS systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for AT25XE161D-SHN-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The AT25XE161D belongs to Renesas' serial Flash memory product line, engineered specifically for ultra-low-power, high-reliability embedded applications demanding flexible erase, secure storage, and efficient XiP execution.

FAQ

What is the operating voltage range of the AT25XE161D-SHN-B?

The AT25XE161D-SHN-B operates from 1.65 V to 3.6 V, enabling compatibility with 1.8 V, 2.5 V, and 3.3 V system rails. This wide range supports battery-powered devices during voltage sag and simplifies power domain design without level shifters. The AT25XE161D maintains full functionality-including 133 MHz operation and all command sets-across this entire voltage window.

Does the AT25XE161D-SHN-B support execute-in-place (XiP) operation?

Yes, the AT25XE161D-SHN-B supports true eXecute-in-Place via 0-4-4 and 1-4-4 quad I/O modes, including continuous read with no command opcode required after initial setup. This enables deterministic code fetch directly from Flash, reducing external RAM requirements. The AT25XE161D achieves up to 532 MB/s effective bandwidth in 1-4-4 mode at 133 MHz, making it suitable for real-time embedded applications.

How does the Read-Modify-Write (RMW) command work in the AT25XE161D-SHN-B?

The AT25XE161D-SHN-B implements a single-command RMW (0Ah) that internally reads a target byte, modifies specified bits, and writes back-all without host intervention. This emulates SRAM-style bit-level writes in Flash, eliminating the traditional read-erase-program cycle. The AT25XE161D executes RMW atomically within the device, preserving data integrity and reducing host software complexity for EEPROM emulation tasks.

What power-saving modes does the AT25XE161D-SHN-B offer?

The AT25XE161D-SHN-B provides three low-power states: Standby (30 µA typical), Deep Power-Down (B9h, 8.2 µA typical), and Ultra Deep Power-Down (79h, 7 nA typical). All modes retain memory contents and resume instantly upon wake command. The AT25XE161D's 7 nA UDPD is among the lowest in its class, extending battery life in always-on edge devices without compromising data retention.

Can the AT25XE161D-SHN-B be used for secure firmware storage?

Yes, the AT25XE161D-SHN-B includes three 128-byte One-Time Programmable (OTP) security registers and a factory-programmed 128-byte unique identifier. These support cryptographic key storage, device authentication, and secure boot chain implementation. The AT25XE161D also offers individual block lock, global lock, and status register lock commands to prevent unauthorized modification of protected firmware or configuration regions.