Renesas AT25XE161D-UUN-T

Overview

AT25XE161D from Renesas Electronics is a 16-Mbit SPI serial flash memory IC supporting quad I/O, XiP (eXecute-in-Place), and flexible erase architecture (256-byte page to 64-kByte block). It operates from 1.65 V to 3.6 V, delivers up to 133 MHz read speed in 1-4-4 mode, and features active status interrupt, RMW command for SRAM-like writes, and ultra-low 7 nA deep power-down current. It is used in embedded boot code storage, firmware updates, and data logging in battery-powered IoT edge nodes.

For engineers reviewing the AT25XE161D datasheet, AT25XE161D pinout, AT25XE161D application, or AT25XE161D equivalent, key selection criteria include multi-I/O timing compatibility (1-1-2/1-1-4/1-4-4/0-4-4), JEDEC SFDP support for auto-configuration, OTP security register availability, and verified endurance (100,000 P/E cycles) with 20-year data retention at +85 °C.

Technical Context

The AT25XE161D implements a dual-bus interface: standard SPI control lines (CS, SCK, SI, SO) plus four configurable I/O pins (I/O0–I/O3) enabling true quad I/O and XiP operation. Its internal 256-byte SRAM buffer supports sequential programming and buffer-to-memory transfers without prior erase.

Memory architecture includes six programmable status registers (SR1–SR6), individual block lock/unlock commands (36h/39h), global protection (7Eh/98h), and hardware reset via dedicated HOLD/RESET pin or JEDEC-standard reset sequence. Power management integrates three low-power states: standby (30 µA), deep power-down (8.2 µA), and ultra-deep power-down (7 nA).

Key Specifications

Pinout & Package

AT25XE161D-UUN-T uses an 8-pad Ultra-thin DFN package (2 mm × 3 mm × 0.6 mm), RoHS-compliant, with wettable flank leads for automated optical inspection (AOI) during SMT assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial flash memory applications.

Compared with W25Q16JW and MT25QL128ABA, the AT25XE161D uniquely combines 1.65 V minimum supply, RMW command, active status interrupt, and true 0-4-4 XiP mode-making it optimal for ultra-low-power, interrupt-driven, and space-constrained embedded boot and logging applications.

Availability

AT25XE161D-UUN-T is available at Aetrix Electronics and suitable for industrial PLC firmware storage, medical wearable sensor logging, and automotive ADAS boot image storage requiring stable component supply across extended product lifecycles.

Supply support for AT25XE161D-UUN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and IoT markets.

The AT25XE161D belongs to Renesas' AT25XE family of low-voltage, multi-I/O serial flash memories designed specifically for energy-efficient, space-constrained embedded systems requiring fast XiP, robust data logging, and secure firmware storage.

FAQ

What is the minimum supply voltage supported by the AT25XE161D-UUN-T?

The AT25XE161D-UUN-T supports a minimum supply voltage of 1.65 V, enabling direct interface with 1.8 V I/O domains without level-shifting circuitry. This specification is validated across the full industrial temperature range (−40 °C to +85 °C) and is critical for battery-powered applications where brown-out conditions may occur. The device remains fully functional-including all I/O modes and status register access-at this voltage.

Does the AT25XE161D-UUN-T support execute-in-place (XiP) operation, and what modes are available?

Yes, the AT25XE161D-UUN-T supports eXecute-in-Place (XiP) operation via two dedicated command formats: 1-4-4 (command + 4-bit address + 4-bit data) and 0-4-4 (no command opcode, continuous 4-bit data reads after initial setup). These modes eliminate instruction fetch latency by allowing the host processor to directly execute code from flash memory, significantly reducing boot time and external RAM requirements in resource-limited designs.

How does the Read-Modify-Write (RMW) command (0Ah) function in the AT25XE161D-UUN-T?

The AT25XE161D-UUN-T implements the RMW command (0Ah) to perform atomic byte-level updates in a single SPI transaction-emulating EEPROM behavior without requiring external buffering. Internally, the device reads the target page into its 256-byte SRAM buffer, modifies the specified byte(s), erases the page, and rewrites the updated content. This eliminates race conditions during partial-page updates and is essential for reliable configuration storage and data logging.

What power-saving modes does the AT25XE161D-UUN-T offer, and what are their typical current draws?

The AT25XE161D-UUN-T provides three low-power states: standby (30 µA typical), deep power-down (DPD, 8.2 µA typical), and ultra-deep power-down (UDPD, 7 nA typical). DPD and UDPD are entered via dedicated commands (B9h and 79h) and exited using ABh with device ID verification. These modes are fully characterized across temperature and voltage ranges, making them suitable for battery-operated devices requiring multi-year shelf life or intermittent wake-up operation.

Can the AT25XE161D-UUN-T be used in automotive applications, and what qualifications does it meet?

The AT25XE161D-UUN-T operates across −40 °C to +85 °C and meets RoHS compliance and JEDEC standards for serial flash memory, but it is not AEC-Q100 qualified. For automotive applications requiring qualification, Renesas offers the pin-compatible AT25XE161D-AU variant (AEC-Q100 Grade 3). The AT25XE161D-UUN-T is suitable for non-safety-critical automotive subsystems such as infotainment UI storage or gateway OTA staging-provided system-level validation confirms reliability under vehicle-specific thermal and EMC conditions.