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Renesas AT25XE321D-SSHN-T
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- Part No.:
- AT25XE321D-SSHN-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AT25XE321D-SSHN-T.pdf
- Description:
- IC FLASH 32MBIT SPI/QUAD 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,964
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Product details
Overview
AT25XE321D from Renesas Electronics is a 32-Mbit SPI serial Flash memory IC supporting 1.65 V–3.6 V operation, quad I/O (1-4-4) and XiP modes, 133 MHz max clock frequency, and 256-byte page erase granularity. It serves as non-volatile program storage or direct code execution memory in microcontroller-based embedded systems requiring low-power, high-reliability data retention.
For engineers reviewing the AT25XE321D datasheet, AT25XE321D pinout, AT25XE321D application, or AT25XE321D equivalent, key selection criteria include multi-I/O timing compliance, ultra-deep power-down current (5–7 nA), read-modify-write command support for EEPROM emulation, and JEDEC SFDP compatibility for automated configuration.
Technical Context
The AT25XE321D implements a dual-bus interface architecture with dedicated SRAM buffer and configurable I/O drive strength, enabling simultaneous command/address/data transfer in quad I/O and XiP modes. Its status register set includes six registers with non-volatile/volatile variants and lockable protection bits.
It supports nested erase/program suspend-resume operations and hardware reset via JEDEC-standard RESET pin or command sequence. The device uses continuous-read burst wrap (77h) and active status interrupt (25h) to reduce host polling overhead during long latency operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 32 Mbit (4 MB), organized as 64 × 64-kByte blocks for flexible partitioning |
| Operating Voltage | 1.65 V – 3.6 V - enables direct interfacing with 1.8 V and 3.3 V MCUs without level shifters |
| Max Clock Frequency | 133 MHz - achieves up to 532 MB/s effective throughput in quad I/O (1-4-4) mode |
| Erase Granularity | 256-byte page erase - minimizes write latency for small-data logging and firmware patch updates |
| Power Consumption | 5–7 nA Ultra Deep Power-Down current - extends battery life in always-on sensor nodes |
| Data Retention | 20 years at +85 °C - validated for industrial temperature-grade reliability over product lifetime |
| Endurance | 100,000 program/erase cycles - sufficient for frequent OTA update or configuration storage use cases |
Pinout & Package
AT25XE321D-SSHN-T is supplied in an 8-lead SOIC (150-mil) package per JEDEC MS-012, with gull-wing leads and RoHS-compliant finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS# | Chip Select Input | Active-low enable for SPI command initiation; must remain asserted throughout multi-byte transfers |
| SCK | Serial Clock Input | Provides timing reference for all SPI transfers; supports up to 133 MHz with configurable drive strength |
| SI / IO0 | Serial Data Input / I/O0 | Primary data input in standard SPI; bidirectional in dual/quad I/O modes |
| SO / IO1 | Serial Data Output / I/O1 | Primary data output in standard SPI; bidirectional in dual/quad I/O modes |
| WP# / IO2 | Write Protect Input / I/O2 | Hardware write protection when asserted low; functions as I/O2 in quad I/O mode |
| HOLD# / IO3 | Hold Input / I/O3 | Pauses ongoing transfers without deselecting device; functions as I/O3 in quad I/O mode |
| VCC | Power Supply | 1.65–3.6 V supply; decoupling capacitor required per datasheet layout guidelines |
| GND | Ground | Reference return path for all signals and power; separate analog/digital ground not required |
Key Features
| Feature | Design Value |
|---|---|
| Read-Modify-Write (RMW) Command (0Ah) | Emulates single-cycle SRAM-style writes to Flash without external buffering or erase-before-write overhead |
| Active Status Interrupt (25h) | Generates hardware interrupt on RDY/BSY flag transition, eliminating polling in real-time systems |
| Quad I/O and XiP Support (1-4-4 / 0-4-4) | Enables direct code execution with zero-command continuous reads, reducing instruction fetch latency by >40% vs standard SPI |
| Ultra Deep Power-Down (79h) | Reduces standby current to 5–7 nA - critical for energy-harvesting and coin-cell-powered edge devices |
| Factory Unique ID + 3×128-byte OTP Registers | Supports secure device identity binding, firmware signing keys, and immutable configuration storage |
| Flexible Block Protection | Per-block lock/unlock (36h/39h) and global protection (7Eh/98h) prevent accidental firmware corruption during field updates |
Applications
| Industrial PLC Firmware Storage | Automotive Telematics Boot Memory |
|---|---|
Use Scenario: Storing and updating ladder logic firmware in programmable logic controllers operating in harsh environments (-40 °C to +85 °C). IC Role / Device Role / Timing Role: Primary non-volatile boot memory with XiP capability for deterministic startup and field-upgradable application code. Use Value: 20-year data retention and 100K endurance ensure firmware integrity across 15+ year equipment lifecycles without replacement. |
Use Scenario: Hosting boot loader and secure OTA update images in automotive telematics control units (TCUs) with ASIL-B functional safety requirements. IC Role / Device Role / Timing Role: Secure, low-power Flash memory supporting encrypted image verification and atomic firmware swap via RMW and block protection. Use Value: Factory-programmed unique ID and OTP registers enable cryptographic key binding and anti-cloning measures compliant with UNECE R155. |
| Smart Meter Data Logging | IoT Edge Sensor Node Configuration |
Use Scenario: Recording time-stamped consumption data in utility smart meters powered by primary lithium batteries with 10+ year service life. IC Role / Device Role / Timing Role: High-endurance data logger using 256-byte page erase to minimize write amplification and extend flash wear life. Use Value: 5–7 nA UDPD current reduces annual battery drain to <0.1% capacity, enabling maintenance-free operation over full meter lifetime. |
Use Scenario: Storing calibrated sensor offsets, network credentials, and device-specific parameters in battery-powered environmental sensors deployed in remote locations. IC Role / Device Role / Timing Role: Low-voltage (1.65 V) configuration memory supporting fast wake-from-sleep reinitialization via SPI command queue. Use Value: 1.65 V minimum VCC allows direct connection to buck-boost regulators without LDO, simplifying power architecture and reducing BOM cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q32JVSNIQ | 32 Mbit, 1.7–2.0 V or 2.7–3.6 V dual voltage range; no 1.65 V support; lacks RMW command and active status interrupt | Requires voltage translation for 1.65 V systems; no hardware interrupt for RDY/BSY signaling | Select when operating exclusively at 1.8 V or 3.3 V and interrupt-driven latency control is unnecessary |
| Micron MT25QL32ABA8ESF-0SIT | 32 Mbit, 1.7–2.0 V or 2.7–3.6 V; supports SFDP v1.6 but no XiP continuous-read mode; 100K endurance same | No 0-4-4 XiP mode; higher minimum VCC excludes ultra-low-power battery designs | Prefer for legacy SPI-only systems where quad I/O bandwidth and XiP are unused |
Compared with W25Q32JVSNIQ and MT25QL32ABA8ESF-0SIT, the AT25XE321D uniquely delivers 1.65 V operation, hardware RDY/BSY interrupt, and true XiP continuous-read mode - making it the only choice for battery-constrained, real-time, and secure embedded boot applications requiring guaranteed low-voltage functionality.
Availability
AT25XE321D-SSHN-T is available at Aetrix Electronics and suitable for industrial automation firmware storage, automotive telematics boot memory, and IoT edge sensor node configuration requiring stable component supply across extended product lifecycles.
Supply support for AT25XE321D-SSHN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power management, and memory solutions for industrial, automotive, and infrastructure markets.
The AT25XE321D belongs to Renesas' AT25XE family of high-reliability serial Flash memories designed specifically for low-voltage, low-power, and secure embedded applications demanding long-term data integrity and robust firmware update capabilities.
FAQ
What is the minimum operating voltage for the AT25XE321D-SSHN-T?
The AT25XE321D-SSHN-T operates down to 1.65 V, enabling direct integration with 1.8 V microcontrollers and ultra-low-power battery systems without level-shifting circuitry. This specification is verified across the full industrial temperature range (-40 °C to +85 °C) and is a key differentiator versus competing 32-Mbit Flash devices that require ≥1.7 V.
Does the AT25XE321D-SSHN-T support execute-in-place (XiP) mode?
Yes, the AT25XE321D-SSHN-T supports true XiP operation using the 0-4-4 command format, which eliminates opcode transmission overhead and enables continuous burst reads. This allows host processors to fetch instructions directly from Flash with deterministic latency, confirmed in Section 4.6 of the DS-AT25XE321D-160 datasheet.
How does the Read-Modify-Write (RMW) command work in the AT25XE321D-SSHN-T?
The AT25XE321D-SSHN-T implements RMW via command 0Ah, allowing single-command byte-level updates without prior erase. Internally, it reads the target page into its 256-byte SRAM buffer, modifies specified bytes, erases the page, and rewrites - all transparently. This emulates EEPROM behavior while retaining Flash density and cost advantages.
What power-saving modes does the AT25XE321D-SSHN-T offer?
The AT25XE321D-SSHN-T provides three low-power states: Standby (26 µA typical), Deep Power-Down (7 µA typical), and Ultra Deep Power-Down (5–7 nA typical). UDPD mode is entered with command 79h and exited with ABh, preserving all register and memory contents without reset.
Is the AT25XE321D-SSHN-T pin-compatible with other Renesas serial Flash devices?
The AT25XE321D-SSHN-T shares the same 8-lead SOIC (150-mil) footprint and pinout as other members of the AT25XE family (e.g., AT25XE161D, AT25XE641D), enabling scalable memory design across 16/32/64-Mbit densities without PCB revision.
AT25XE321D-SSHN-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8
- Memory Interface:
- SPI - Quad I/O
- Clock Frequency:
- 104 MHz
- Write Cycle Time - Word, Page:
- 60µs, 12ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AT25XE321D-SSHN-T FAQ
1.How can I place an order for AT25XE321D-SSHN-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25XE321D-SSHN-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25XE321D-SSHN-T reliable?
The price and inventory of AT25XE321D-SSHN-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25XE321D-SSHN-T is usually 5 days.
3.What payment methods are accepted for AT25XE321D-SSHN-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25XE321D-SSHN-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25XE321D-SSHN-T?
AT25XE321D-SSHN-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25XE321D-SSHN-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25XE321D-SSHN-T?
For technical support, including AT25XE321D-SSHN-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25XE321D-SSHN-T requirements.
6.How does Aetrix verify that AT25XE321D-SSHN-T is sourced from the original manufacturer or authorized distributors?
All AT25XE321D-SSHN-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25XE321D-SSHN-T meets industry standards.
7.What is the process for return or replacement of AT25XE321D-SSHN-T?
All AT25XE321D-SSHN-T units undergo pre-shipment inspection (PSI). If there is an issue with AT25XE321D-SSHN-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25XE321D-SSHN-T part is unused and in its original packaging.
Return procedure for AT25XE321D-SSHN-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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