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Renesas AT25XE512C-MAHN-T
- Part No.:
- AT25XE512C-MAHN-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-UFDFN Exposed Pad
- Datasheet:
-
AT25XE512C-MAHN-T.pdf
- Description:
- IC FLASH 512KBIT SPI 8UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:240
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Product details
Overview
AT25XE512C-MAHN-T from Adesto Technologies is a 512-Kbit SPI serial flash memory IC optimized for ultra-low-energy IoT and industrial embedded systems. It operates from 1.65V to 3.6V, supports SPI Modes 0/3 and Dual-Output Read at up to 50 MHz, delivers 6 ns clock-to-output timing, and features granular 256-byte page erase - enabling efficient over-the-air firmware updates and mixed code/data storage.
For engineers reviewing the AT25XE512C-MAHN-T datasheet, AT25XE512C-MAHN-T pinout, AT25XE512C-MAHN-T application, or AT25XE512C-MAHN-T equivalent, key selection criteria include its 200 nA ultra-deep power-down current, 128-byte OTP security register (64-byte factory UID + 64-byte user-programmable), JEDEC-standard ID read, and hardware write protection via WP pin.
Technical Context
The AT25XE512C-MAHN-T implements a dedicated SPI interface with dual-phase clocking: data latched on SCK rising edge (SI input) and output on falling edge (SO output). Its Dual-Output Read mode repurposes SI as I/O0 alongside SO (I/O1) to deliver two bits per clock cycle, doubling throughput versus standard single-output reads.
Internally, it uses a segmented erase architecture with three fixed granularities - 256-byte pages, uniform 4-Kbyte blocks, and 32-Kbyte blocks - allowing precise allocation of firmware subroutines and runtime data without wasting space. Erase/program failure detection is handled autonomously via EPE bit reporting in the Status Register.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Kbit (64 Kbyte) organized as 256 pages × 256 bytes; enables compact firmware storage with minimal footprint. |
| Supply Voltage Range | 1.65V–3.6V single supply; eliminates need for level shifters in battery-powered or wide-input industrial designs. |
| Max Clock Frequency | 104 MHz for standard commands; supports high-speed configuration loading and diagnostics. |
| Read Throughput | 50 MHz Dual-Output Read (3Bh); delivers 100 Mbps effective data rate using SI/SO as parallel outputs. |
| Erase Granularity | 256-byte page, 4-Kbyte block, 32-Kbyte block, full chip; allows independent update of bootloader, app, and config sections. |
| Power Consumption | 200 nA ultra-deep power-down current; extends battery life in always-on sensor nodes and wearables. |
| Endurance & Retention | 100,000 program/erase cycles and 20-year data retention; suitable for field-upgradable mission-critical firmware. |
Pinout & Package
AT25XE512C-MAHN-T is packaged in an 8-lead SOIC (150-mil) surface-mount package, compatible with standard reflow profiles and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; initiates all operations and places SO in high-impedance when deasserted. |
| SCK | Serial Clock | Master-generated clock; data latched on rising edge (SI), output on falling edge (SO/I/O1). |
| SI (I/O0) | Serial Input / Dual-Output Data 0 | Input for commands/addresses/data; becomes output (I/O0) during Dual-Output Read to carry bit[7:6] per cycle. |
| SO (I/O1) | Serial Output / Dual-Output Data 1 | Primary output for standard reads; remains active (I/O1) during Dual-Output Read to carry bit[5:4] per cycle. |
| WP | Write Protect | Hardware lock control; low-active signal prevents accidental writes/erases to protected sectors. |
| HOLD | Communication Pause | Low-active hold; suspends SPI transfer without deselecting device or resetting internal state. |
| VCC | Power Supply | 1.65V–3.6V input; powers all logic and memory array; no separate VPP required for programming. |
| GND | Ground Reference | System ground return path; must be low-impedance for stable read/write margins and noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-Output Read Support | Enables 100 Mbps effective read bandwidth using SI/SO as synchronized dual-bit outputs, reducing host MCU wait states. |
| 128-byte OTP Security Register | Provides tamper-resistant storage for unique device identifiers (64-byte factory UID) and encrypted keys (64-byte user space). |
| Flexible Erase Architecture | Supports page (256 B), 4-KB, 32-KB, and full-chip erase - minimizing wasted space during partial firmware updates. |
| Ultra-Low Power States | 200 nA ultra-deep power-down and 4.5 µA deep power-down allow rapid wake-from-sleep in energy-constrained edge devices. |
| Hardware Write Protection | WP pin enables sector-level locking without software overhead, preventing corruption during brown-out or reset events. |
Applications
| Smart Meter Firmware Storage | Industrial PLC Configuration Memory |
|---|---|
Use Scenario: Storing and updating firmware images and calibration tables in utility-grade smart meters operating on lithium-thionyl chloride batteries. IC Role / Device Role / Timing Role: Nonvolatile code and parameter storage with secure OTA update capability via Dual-Output Read and granular page erase. Use Value: 200 nA ultra-deep power-down extends 15+ year battery life; 100,000-cycle endurance ensures reliability across decades of field updates. | Use Scenario: Holding real-time I/O mapping, safety logic configurations, and diagnostic logs in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Persistent configuration storage with hardware WP pin protection against runtime corruption during voltage transients. Use Value: 4-KB block erase enables fast reconfiguration of I/O modules without disturbing core runtime firmware. |
| Wireless Sensor Node Bootloader | Medical Wearable Device Log Storage |
Use Scenario: Hosting secure bootloader and recovery image in BLE/Zigbee end-nodes powered by coin-cell batteries. IC Role / Device Role / Timing Role: Trusted boot storage with OTP-secured public key and verified firmware signature validation. Use Value: Factory-programmed 64-byte UID enables cryptographic binding to cloud identity; 6 ns tV ensures deterministic boot timing. | Use Scenario: Recording patient biometric history and device event logs in FDA-cleared wearable patches with strict power budgets. IC Role / Device Role / Timing Role: Low-power persistent data logger supporting frequent small writes and infrequent bulk erases. Use Value: 256-byte page erase minimizes write amplification and extends flash lifetime under high-frequency logging workloads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q40EW | 4-Mbit density, 1.7–2.0V operation only; lacks Dual-Output Read and OTP register; 10 ms typical page program time. | Higher capacity but narrower voltage range; unsuitable for sub-1.7V battery operation or secure UID requirements. | Select only if higher density is mandatory and ultra-low-voltage operation or hardware security is not required. |
| Micron MT25QL01G | 1-Gbit density, 2.7–3.6V operation; supports Quad SPI and XIP; no OTP register; 1.5 mA active read current vs. 3.5 mA for AT25XE512C-MAHN-T. | Better for high-performance XIP execution but incompatible with 1.65V systems and lacks integrated UID security. | Choose for high-bandwidth applications where voltage headroom exceeds 2.7V and UID-based authentication is handled externally. |
Compared with W25Q40EW and MT25QL01G, the AT25XE512C-MAHN-T uniquely balances ultra-low-voltage operation (1.65V), integrated security (OTP UID), and energy-efficient Dual-Output Read - making it optimal for constrained-edge IoT nodes where voltage margin, security, and power are co-primary constraints.
Availability
AT25XE512C-MAHN-T is available at Aetrix Electronics and suitable for smart meter firmware storage, industrial PLC configuration memory, and wireless sensor node bootloader applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant green packaging.
Supply support for AT25XE512C-MAHN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Adesto Technologies (acquired by Dialog Semiconductor, now part of Renesas Electronics) specialized in ultra-low-power nonvolatile memory and IoT connectivity solutions before integration into Renesas' embedded processing portfolio.
The AT25XE512C-MAHN-T belongs to Adesto's EcoXi™ family of serial flash devices, engineered specifically for energy-constrained edge nodes needing secure, reliable, and voltage-flexible firmware and data storage.
FAQ
What is the minimum operating voltage for the AT25XE512C-MAHN-T?
The AT25XE512C-MAHN-T operates down to 1.65V across its full temperature range (–10°C to +85°C). At –40°C to +85°C, the minimum supply is 1.7V. This ultra-low-voltage capability enables direct interfacing with single-cell Li-ion or Li-SOCl₂ batteries without regulators, reducing bill-of-materials cost and board space in portable and remote IoT devices. The AT25XE512C-MAHN-T maintains full functionality-including Dual-Output Read and OTP access-across this entire voltage window.
Does the AT25XE512C-MAHN-T support Quad SPI or only standard SPI?
No, the AT25XE512C-MAHN-T does not support Quad SPI. It supports standard SPI Modes 0 and 3 with single- and dual-output read modes only. Dual-Output Read uses SI (I/O0) and SO (I/O1) to output two bits per clock cycle, achieving up to 50 MHz effective throughput. Quad SPI functionality is absent-no QIO, QPI, or 4-wire read commands are defined in the AT25XE512C-MAHN-T command set or pinout. The AT25XE512C-MAHN-T is optimized for simplicity, low power, and voltage flexibility-not maximum bandwidth.
How is the 128-byte OTP security register structured in the AT25XE512C-MAHN-T?
The AT25XE512C-MAHN-T's 128-byte OTP register is split into two 64-byte segments: the first 64 bytes are factory-programmed with a globally unique identifier (UID) and cannot be modified; the second 64 bytes are user-programmable once, supporting secure key injection, device-specific certificates, or locked configuration flags. Programming requires the Program OTP Security Register command (9Bh) and prior Write Enable. Once written, OTP bytes are permanently locked-no erase or rewrite is possible. This structure enables cryptographic binding and secure boot in resource-limited edge devices using the AT25XE512C-MAHN-T.
What erase times can be expected for different block sizes in the AT25XE512C-MAHN-T?
The AT25XE512C-MAHN-T specifies typical erase times of 2 ms for 256-byte pages, 50 ms for 4-Kbyte blocks, 400 ms for 32-Kbyte blocks, and 1.5 seconds for full chip erase. These values are measured under standard conditions (VCC = 3.0V, TA = 25°C) and reflect internally self-timed operations. The device reports busy status via the RDY/BUSY bit in the Status Register, enabling efficient polling instead of fixed delays. All erase operations are verified automatically, and failures are flagged in the EPE bit-ensuring data integrity without host-side verification overhead in the AT25XE512C-MAHN-T.
Is the AT25XE512C-MAHN-T pin-compatible with other Adesto serial flash devices like the AT25DF041A?
No, the AT25XE512C-MAHN-T is not pin-compatible with the AT25DF041A or earlier Adesto flash families. While both use 8-lead SOIC packages, the AT25XE512C-MAHN-T introduces HOLD functionality and redefines SI/SO behavior during Dual-Output Read-requiring updated PCB layout and firmware driver support. The AT25DF041A lacks HOLD, OTP register, Dual-Output Read, and ultra-low-power modes. Migration to AT25XE512C-MAHN-T necessitates hardware review and software adaptation, particularly for SPI timing, command set, and power-state management. Pin compatibility cannot be assumed between these generations of Adesto flash devices.
AT25XE512C-MAHN-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 512Kbit
- Memory Organization:
- 64K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 104 MHz
- Write Cycle Time - Word, Page:
- 12µs, 3ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-UDFN (2x3)
AT25XE512C-MAHN-T FAQ
1.How can I place an order for AT25XE512C-MAHN-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25XE512C-MAHN-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25XE512C-MAHN-T reliable?
The price and inventory of AT25XE512C-MAHN-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25XE512C-MAHN-T is usually 5 days.
3.What payment methods are accepted for AT25XE512C-MAHN-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25XE512C-MAHN-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25XE512C-MAHN-T?
AT25XE512C-MAHN-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25XE512C-MAHN-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25XE512C-MAHN-T?
For technical support, including AT25XE512C-MAHN-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25XE512C-MAHN-T requirements.
6.How does Aetrix verify that AT25XE512C-MAHN-T is sourced from the original manufacturer or authorized distributors?
All AT25XE512C-MAHN-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25XE512C-MAHN-T meets industry standards.
7.What is the process for return or replacement of AT25XE512C-MAHN-T?
All AT25XE512C-MAHN-T units undergo pre-shipment inspection (PSI). If there is an issue with AT25XE512C-MAHN-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25XE512C-MAHN-T part is unused and in its original packaging.
Return procedure for AT25XE512C-MAHN-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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