Renesas AT25XE512C-SSHN-T
- Part No.:
- AT25XE512C-SSHN-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AT25XE512C-SSHN-T.pdf
- Description:
- IC FLASH 512KBIT SPI 8SOIC
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
AT25XE512C-SSHN-T from Adesto Technologies is a 512-Kbit serial flash memory IC with SPI interface, supporting Dual-Output Read at up to 50 MHz, 1.65V–3.6V single-supply operation, and granular erase architecture (256-byte page / 4-KB & 32-KB blocks). It delivers 6 ns clock-to-output timing and integrates a 128-byte OTP security register for device serialization in IoT edge nodes.
For engineers reviewing the AT25XE512C-SSHN-T datasheet, AT25XE512C-SSHN-T pinout, AT25XE512C-SSHN-T application, or AT25XE512C-SSHN-T equivalent, key selection criteria include ultra-low power deep power-down current (200 nA), JEDEC-standard ID read capability, hardware write protection via WP pin, and support for SPI Modes 0 and 3 in industrial temperature range (−40°C to +85°C).
Technical Context
The AT25XE512C-SSHN-T implements a dedicated SPI master-slave interface with four signal lines (CS, SCK, SI/I/O0, SO/I/O1), enabling Dual-Output Read where both SI and SO function as data outputs during 3Bh-command transfers. Its internal address counter auto-increments on each clock cycle during sequential reads.
Erase operations are fully hardware-managed with three granularity levels-page (256 B), block (4 KB or 32 KB), and full chip-and supported by automatic program/erase failure detection via the EPE bit in the Status Register. The OTP security register contains 64 bytes factory-programmed with a unique identifier and 64 bytes user-programmable.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Kbit (64 KB) organized as 256 pages × 256 bytes; enables compact firmware storage with minimal footprint. |
| Supply Voltage | 1.65 V to 3.6 V single supply; eliminates need for level shifters in battery-powered or mixed-voltage systems. |
| Max Clock Frequency | 104 MHz for standard commands; supports high-throughput firmware updates and OTA code patches. |
| Read Latency | 6 ns clock-to-output (tV); reduces MCU wait states and improves real-time response in time-critical boot sequences. |
| Erase Granularity | 256-byte page, 4-KB block, 32-KB block, and full-chip erase; minimizes wasted space during partial firmware updates. |
| Power Consumption | 200 nA ultra-deep power-down current; extends battery life in always-on sensor nodes and wearables. |
| Data Retention | 20 years at +85°C; ensures long-term reliability for sealed industrial or automotive modules without maintenance. |
| Endurance | 100,000 program/erase cycles per sector; supports frequent field-upgrade scenarios in connected devices. |
Pinout & Package
AT25XE512C-SSHN-T uses an 8-lead SOIC (150-mil) package with standard SPI pinout and hardware control pins for write protection and communication hold.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select input | Active-low enable signal; must transition high→low to start any command and low→high to terminate; controls SO high-impedance state when deselected. |
| SCK | Serial clock input | Drives all data transfers; rising edge latches SI/I/O0 input, falling edge clocks SO/I/O1 output; supports up to 104 MHz. |
| SI (I/O0) | Serial input / Dual-Output Read data line | Primary command/address/data input; becomes I/O0 output during Dual-Output Read (3Bh), delivering bit[6:7] of each byte. |
| SO (I/O1) | Serial output / Dual-Output Read data line | Primary data output; becomes I/O1 output during Dual-Output Read (3Bh), delivering bit[7] of each byte first. |
| WP | Write protect input | Hardware lock for protected sectors; low-active; internally pulled high; allows secure firmware partitioning without software overhead. |
| HOLD | Communication pause input | Temporarily suspends SPI transfer without deselecting device; requires CS asserted and SCK low to activate; preserves internal state during MCU interrupts. |
| VCC | Power supply | 1.65–3.6 V input; powers all logic and memory array; no separate programming voltage required. |
| GND | Ground reference | System ground return path; must be low-impedance connection to minimize noise coupling into sensitive read paths. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-Output Read mode | Enables 2-bit-per-clock throughput using SI and SO simultaneously, doubling effective read bandwidth over standard SPI without increasing clock frequency. |
| Flexible erase architecture | Supports 256-byte page, 4-KB block, 32-KB block, and full-chip erase - optimizes memory utilization for mixed code+data storage in constrained embedded systems. |
| 128-byte OTP security register | Contains 64-byte factory-unique ID and 64-byte user-programmable space for ESN, cryptographic keys, or calibration data - eliminates external secure element in cost-sensitive designs. |
| Ultra-low deep power-down | Draws only 200 nA typical current in Ultra Deep Power-Down mode (79h command), enabling multi-year battery operation in intermittent-sensing applications. |
| JEDEC-standard ID read | Supports 9Fh command to read manufacturer (0x1F) and device ID (0x43) - simplifies automated BOM verification and supply-chain traceability. |
| Automatic program/erase validation | Detects and reports failures via EPE bit in Status Register - prevents silent corruption during field updates and enables robust recovery protocols. |
Applications
| Smart Sensor Node | Firmware-Updateable Wearable |
|---|---|
Use Scenario: Battery-powered environmental sensor collecting temperature/humidity data and transmitting via BLE. IC Role / Device Role / Timing Role: Stores calibrated sensor firmware, configuration tables, and OTA update staging area; provides sub-6 ns read latency for fast boot and sensor initialization. Use Value: 200 nA ultra-deep power-down current extends 200 mAh coin-cell life beyond 5 years; 256-byte page erase enables atomic patch updates without corrupting active runtime code. | Use Scenario: Fitness tracker with over-the-air firmware upgrades and personalized settings persistence. IC Role / Device Role / Timing Role: Holds bootloader, application firmware, and user profile data; Dual-Output Read accelerates firmware validation post-update. Use Value: 50 MHz Dual-Output Read cuts firmware verification time by ~40% vs. standard SPI; 128-byte OTP register stores device-specific encryption keys and factory calibration offsets. |
| Industrial PLC I/O Module | Connected Home Gateway |
Use Scenario: DIN-rail mounted controller storing protocol stacks (Modbus, CANopen) and field-configurable logic. IC Role / Device Role / Timing Role: Nonvolatile storage for firmware, parameter sets, and event logs; hardware WP pin locks critical configuration sectors against accidental overwrite. Use Value: −40°C to +85°C operation ensures reliability in unconditioned cabinets; 100,000-cycle endurance supports daily diagnostic logging for >27 years. | Use Scenario: Wi-Fi/Zigbee hub performing secure boot, TLS certificate storage, and mesh network topology caching. IC Role / Device Role / Timing Role: Secure boot image storage with verified integrity; OTP register holds immutable root-of-trust keys for secure boot chain. Use Value: Factory-programmed 64-byte unique ID enables zero-touch device onboarding; JEDEC ID read (9Fh) validates authenticity during manufacturing test. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q40EW | 4-Mbit density (512 KB), 1.7–2.0 V or 2.7–3.6 V dual-voltage support; no Dual-Output Read; 133 MHz max clock. | Larger capacity but lacks Dual-Output Read and ultra-low 200 nA deep power-down; better suited for higher-bandwidth, non-battery applications. | Select W25Q40EW when >512 KB storage is needed and system voltage is stable within its dual ranges; avoid if 1.65 V operation or sub-µA sleep current is required. |
| Micron MT25QL01G | 1-Gbit density (128 MB), 1.7–2.0 V or 2.7–3.6 V; supports Quad SPI and XIP; 133 MHz max clock; no 200 nA deep power-down mode. | Targeted at high-capacity code storage with execute-in-place capability; incompatible with ultra-low-power edge nodes due to higher standby current (2 µA). | Choose MT25QL01G for applications requiring direct code execution from flash and >1 MB capacity; not suitable as drop-in replacement for AT25XE512C-SSHN-T in energy-constrained designs. |
Compared with W25Q40EW and MT25QL01G, the AT25XE512C-SSHN-T uniquely balances ultra-low power (200 nA), fine-grained erase (256-byte page), and Dual-Output Read - making it optimal for compact, battery-operated IoT endpoints where firmware agility and energy efficiency are co-primary constraints.
Availability
AT25XE512C-SSHN-T is available at Aetrix Electronics and suitable for smart sensor nodes, firmware-updateable wearables, industrial PLC I/O modules, and connected home gateways requiring stable component supply across extended product lifecycles.
Supply support for AT25XE512C-SSHN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Adesto Technologies (now part of Dialog Semiconductor, Renesas Electronics) specialized in ultra-low-power nonvolatile memory and IoT connectivity solutions before acquisition in 2020.
The AT25XE512C-SSHN-T belongs to Adesto's EcoXi™ family of serial flash devices engineered specifically for energy-constrained, always-on IoT endpoints requiring secure, reliable, and field-upgradable firmware storage.
FAQ
What is the operating voltage range of the AT25XE512C-SSHN-T?
The AT25XE512C-SSHN-T operates from 1.65 V to 3.6 V on a single supply rail. This wide range supports direct interfacing with 1.8 V and 3.3 V MCUs without level shifting, and enables use in battery-powered systems where voltage drops over time - such as coin-cell or Li-ion applications - while maintaining full functionality including Dual-Output Read and OTP programming.
Does the AT25XE512C-SSHN-T support Quad SPI or only standard SPI?
The AT25XE512C-SSHN-T supports only standard SPI and Dual-Output Read (2-line output), not Quad SPI. It implements SPI Modes 0 and 3 with SI and SO as primary I/O lines, and repurposes SI as I/O0 during Dual-Output Read (3Bh command). No Quad SPI opcodes (e.g., 6Bh, EBh) or associated pins (IO2/IO3) are defined in the AT25XE512C-SSHN-T datasheet or pinout.
How does the hardware write protection (WP pin) function on the AT25XE512C-SSHN-T?
The WP pin on the AT25XE512C-SSHN-T is a low-active input that enables hardware locking of protected memory sectors. When held low, it prevents execution of Write Enable, Program, and Erase commands on protected regions - independent of software status register settings. The pin is internally pulled high, so it may float if unused, but external connection to VCC is recommended to prevent unintended protection activation from noise.
What is the purpose and structure of the OTP security register in the AT25XE512C-SSHN-T?
The AT25XE512C-SSHN-T includes a 128-byte One-Time Programmable (OTP) security register: 64 bytes are factory-programmed with a unique device identifier (used for secure boot binding or anti-cloning), and 64 bytes are user-programmable once for keys, calibration data, or ESN storage. Programming is irreversible and requires the 9Bh command; reading uses 77h. This eliminates need for external secure elements in cost-sensitive IoT designs.
Can the AT25XE512C-SSHN-T perform true simultaneous dual-bit reads, and what is the maximum achievable throughput?
Yes - during Dual-Output Read (3Bh command), the AT25XE512C-SSHN-T outputs two bits per SCK cycle: bit[7] on SO and bit[6] on SI (I/O0) simultaneously on the first falling edge, then bits[5:4], [3:2], and [1:0] across subsequent edges - delivering one full byte every four clocks. At its rated 50 MHz Dual-Output Read clock, this yields 12.5 MB/s effective throughput, double that of standard SPI at same frequency.
AT25XE512C-SSHN-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 512Kbit
- Memory Organization:
- 64K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 104 MHz
- Write Cycle Time - Word, Page:
- 12µs, 3ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AT25XE512C-SSHN-T FAQ
1.How can I place an order for AT25XE512C-SSHN-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25XE512C-SSHN-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25XE512C-SSHN-T reliable?
The price and inventory of AT25XE512C-SSHN-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25XE512C-SSHN-T is usually 5 days.
3.What payment methods are accepted for AT25XE512C-SSHN-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25XE512C-SSHN-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25XE512C-SSHN-T?
AT25XE512C-SSHN-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25XE512C-SSHN-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25XE512C-SSHN-T?
For technical support, including AT25XE512C-SSHN-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25XE512C-SSHN-T requirements.
6.How does Aetrix verify that AT25XE512C-SSHN-T is sourced from the original manufacturer or authorized distributors?
All AT25XE512C-SSHN-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25XE512C-SSHN-T meets industry standards.
7.What is the process for return or replacement of AT25XE512C-SSHN-T?
All AT25XE512C-SSHN-T units undergo pre-shipment inspection (PSI). If there is an issue with AT25XE512C-SSHN-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25XE512C-SSHN-T part is unused and in its original packaging.
Return procedure for AT25XE512C-SSHN-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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