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Renesas AT25XV021A-MHV-Y

Part No.:
AT25XV021A-MHV-Y
Manufacturer:
Renesas
Category:
Memory
Package:
8-UDFN Exposed Pad
Datasheet:
AetrixAT25XV021A-MHV-Y.pdf
Description:
IC FLASH 2MBIT SPI 70MHZ 8UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,760

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Product details

Overview

AT25XV021A-MHV-Y from Renesas Electronics is a 2-Mbit serial SPI Flash memory IC optimized for low-voltage, low-power embedded systems. It operates across 1.65 V–4.4 V, supports Dual-I/O read at up to 70 MHz, delivers 6 ns clock-to-output timing, and integrates hardware write protection, 128-byte OTP security register (64-byte factory-unique ID), and ultra-deep power-down (200 nA typical). It enables secure over-the-air firmware updates in battery-powered IoT edge nodes.

For engineers reviewing the AT25XV021A-MHV-Y datasheet, AT25XV021A-MHV-Y pinout, AT25XV021A-MHV-Y application, or AT25XV021A-MHV-Y equivalent, key selection criteria include its dual-I/O bandwidth efficiency, flexible erase granularity (256-byte page to 64-kByte block), industrial temperature support (–40°C to +85°C), and green RoHS-compliant 8-pad Ultra Thin DFN (2 × 3 × 0.6 mm) package.

Technical Context

The AT25XV021A-MHV-Y implements a standard SPI interface compliant with Modes 0 and 3, with SI (I/O0) and SO (I/O1) supporting Dual-Output Read for doubled data throughput per SCK cycle. Its internal architecture includes dedicated SRAM data buffer, Y/X decoders, and control logic enabling concurrent status polling during program/erase operations.

It features dual power-down states-Deep Power-Down (5 µA typical) and Ultra-Deep Power-Down (200 nA typical)-triggered via dedicated commands, and supports active status interrupt signaling to wake host MCUs upon operation completion. Sector protection is enforced via both software commands and hardware WP pin assertion.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 2 Mbit (262,144 bytes), sufficient for compact boot code and configuration storage in space-constrained designs.
Supply Voltage Range 1.65 V to 4.4 V - enables direct interfacing with Li-ion, Li-poly, and 3.3 V/1.8 V system rails without level-shifting.
Max Clock Frequency 70 MHz - supports high-speed Dual-I/O read transfers up to 140 MB/s effective throughput.
Read Latency 6 ns clock-to-output (tV) - minimizes wait states during code shadowing and real-time data fetch.
Erase Granularity 256-byte page, 4/32/64-kByte uniform blocks - allows precise wear leveling and independent code/data partitioning.
Power-Down Current 200 nA ultra-deep power-down (typical) - extends battery life in always-on sensor nodes and wearable devices.
Endurance & Retention 100,000 program/erase cycles and 20-year data retention - meets long-lifecycle requirements for industrial firmware storage.

Pinout & Package

AT25XV021A-MHV-Y is packaged in an 8-pad Ultra Thin DFN (2 mm × 3 mm × 0.6 mm), RoHS-compliant, lead-free, halide-free package with wettable flanks for automated optical inspection.

Pin/Terminal Circuit Role Design Meaning
CS Chip Select Active-low enable signal; must transition high-to-low to initiate any command sequence and low-to-high to terminate.
SCK Serial Clock Master-generated clock; rising edge latches input (SI/I/O0), falling edge clocks output (SO/I/O1).
SI (I/O0) Serial Input / Dual-I/O Data Line 0 Primary command/address/data input; becomes I/O0 output during Dual-I/O read for parallel bit streaming.
SO (I/O1) Serial Output / Dual-I/O Data Line 1 Standard output during single-I/O reads; remains I/O1 output in Dual-I/O mode for simultaneous 2-bit output.
WP Write Protect Hardware lock control; low state enables sector protection override, critical for preventing accidental firmware corruption.
HOLD Communication Hold Pauses ongoing SPI transfer without deselecting device; requires CS asserted and SCK low to activate.
VCC Power Supply Single supply input (1.65–4.4 V); no auxiliary voltage required for programming or erasing.
GND Ground Reference Common return path for all digital and analog circuitry; must be low-impedance connection to system ground.

Key Features

Feature Design Value
Dual-I/O Read Support Enables 2-bit-per-clock-cycle data transfer, doubling effective read bandwidth versus standard SPI without increasing SCK frequency.
Flexible Erase Architecture Four erase granularities (256B page, 4/32/64k block) allow optimal allocation between frequently updated config data and rarely changed firmware images.
OTP Security Register 128-byte one-time programmable area with 64-byte factory-unique ID - supports device authentication and secure key binding in disposable consumables.
Ultra-Deep Power-Down Mode 200 nA typical current draw enables multi-year battery operation in maintenance-free edge sensors and asset trackers.
Hardware + Software Protection Combines WP pin-based locking with software-configurable sector protection registers for defense-in-depth against unauthorized writes.

Applications

Wireless Sensor Node Firmware Storage Medical Disposable Device Configuration

Use Scenario: Storing BLE stack firmware and calibration parameters in a coin-cell-powered environmental sensor node.

IC Role / Device Role / Timing Role: Non-volatile code and data storage with fast Dual-I/O read for low-latency boot and OTA update staging.

Use Value: 70 MHz Dual-I/O read and 6 ns tV reduce MCU wake time; 200 nA ultra-deep power-down extends 10-year battery life.

Use Scenario: Securing usage counter and ESN in single-use diagnostic cartridges with MCU-controlled lifecycle enforcement.

IC Role / Device Role / Timing Role: Tamper-resistant configuration storage using OTP register for serialized device identity and locked key storage.

Use Value: Factory-programmed 64-byte unique ID and user-programmable OTP enable USE-ONCE firmware logic without external secure element.

Industrial PLC Boot Memory Smart Home Hub OTA Update Cache

Use Scenario: Holding bootloader and fail-safe recovery image in a DIN-rail mounted controller operating across –40°C to +85°C.

IC Role / Device Role / Timing Role: Industrial-grade code shadowing memory with hardware WP pin to prevent field corruption during brown-out events.

Use Value: Full industrial temperature rating and 100K endurance ensure reliable operation over 15+ years of continuous runtime.

Use Scenario: Caching signed firmware deltas prior to atomic flash update in a Wi-Fi-connected home automation hub.

IC Role / Device Role / Timing Role: High-reliability intermediate storage for validated OTA payloads, leveraging 4-kByte block erase for rapid staging.

Use Value: 45 ms typical 4-kByte block erase enables sub-100ms payload preparation, minimizing user-visible update downtime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
Winbond W25Q20EW 2 Mbit, 1.7–2.0 V supply only; no Ultra-Deep Power-Down (min 1 µA); lacks OTP security register. Better suited for 1.8 V-only systems with lower security requirements; not drop-in for wide-VCC or secure serialization use cases. Select W25Q20EW only if system rail is fixed at 1.8 V and OTP functionality is unnecessary.
Micron MT25QL02GA 2 Mbit, 2.7–3.6 V supply; supports Quad-I/O (not Dual-I/O only); higher active current (6 mA read); no 200 nA power-down mode. Preferred where quad-speed read bandwidth is critical and 3.3 V rail is stable; unsuitable for sub-2 V battery operation or ultra-low-power sleep. Choose MT25QL02GA when Quad-I/O throughput >70 MHz is required and power budget permits higher deep-sleep current.

Compared with W25Q20EW and MT25QL02GA, AT25XV021A-MHV-Y uniquely combines ultra-wide 1.65–4.4 V operation, 200 nA ultra-deep power-down, and factory-programmed unique ID in a 2×3 mm DFN - making it optimal for energy-harvested and multi-rail portable designs requiring secure, long-life non-volatile storage.

Availability

AT25XV021A-MHV-Y is available at Aetrix Electronics and suitable for wireless sensor nodes, medical disposables, industrial PLCs, and smart home hubs requiring stable component supply across extended product lifecycles.

Supply support for AT25XV021A-MHV-Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.

The AT25XV021A belongs to Renesas' low-voltage serial Flash memory product line, engineered specifically for energy-constrained, connected-edge applications demanding secure, reliable, and long-life non-volatile storage.

FAQ

What is the operating voltage range of the AT25XV021A-MHV-Y?

The AT25XV021A-MHV-Y operates across a single supply voltage range of 1.65 V to 4.4 V. This wide range allows direct compatibility with lithium-based batteries (including partially discharged cells), 1.8 V, 2.5 V, 3.3 V, and 4.2 V system rails without external regulators or level shifters - a key enabler for multi-rail and battery-operated designs.

Does the AT25XV021A-MHV-Y support Dual-I/O read operations?

Yes, the AT25XV021A-MHV-Y supports Dual-I/O read using the 0Bh opcode, enabling two bits of data (I/O0 and I/O1) to be clocked out on each falling edge of SCK. This doubles effective read throughput versus standard single-I/O mode while maintaining full SPI Mode 0/3 compatibility and requiring no additional pins beyond the standard SPI interface.

What package type is used for the AT25XV021A-MHV-Y?

The AT25XV021A-MHV-Y uses an 8-pad Ultra Thin DFN package measuring 2 mm × 3 mm × 0.6 mm. It is RoHS-compliant, halide-free, and features wettable flanks to support automated optical inspection (AOI) during PCB assembly - ideal for high-density, miniaturized consumer and medical devices.

How does the OTP security register function in the AT25XV021A-MHV-Y?

The AT25XV021A-MHV-Y includes a 128-byte one-time programmable (OTP) security register: 64 bytes are factory-programmed with a unique device identifier, and 64 bytes are user-programmable. Once written, OTP contents cannot be erased or rewritten - enabling secure device serialization, ESN storage, and locked key binding for disposable consumables and anti-counterfeiting schemes.

What is the minimum power consumption in ultra-deep power-down mode for the AT25XV021A-MHV-Y?

In ultra-deep power-down mode, the AT25XV021A-MHV-Y draws just 200 nA typical current (max 500 nA). This ultra-low quiescent current enables multi-year operation from small coin cells or energy-harvesting sources in always-on sensor nodes, asset trackers, and other battery-constrained edge devices.

AT25XV021A-MHV-Y Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-UDFN Exposed Pad
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
2Mbit
Memory Organization:
256K x 8
Memory Interface:
SPI
Clock Frequency:
70 MHz
Write Cycle Time - Word, Page:
8µs, 2.5ms
Access Time:
-
Voltage - Supply:
1.65V ~ 4.4V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-UDFN (5x6)

AT25XV021A-MHV-Y FAQ

1.How can I place an order for AT25XV021A-MHV-Y through Aetrix?

Please submit a Request for Quotation (RFQ) for AT25XV021A-MHV-Y on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AT25XV021A-MHV-Y reliable?

The price and inventory of AT25XV021A-MHV-Y are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25XV021A-MHV-Y is usually 5 days.

3.What payment methods are accepted for AT25XV021A-MHV-Y?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25XV021A-MHV-Y transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AT25XV021A-MHV-Y?

AT25XV021A-MHV-Y orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AT25XV021A-MHV-Y order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AT25XV021A-MHV-Y?

For technical support, including AT25XV021A-MHV-Y datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25XV021A-MHV-Y requirements.

6.How does Aetrix verify that AT25XV021A-MHV-Y is sourced from the original manufacturer or authorized distributors?

All AT25XV021A-MHV-Y products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25XV021A-MHV-Y meets industry standards.

7.What is the process for return or replacement of AT25XV021A-MHV-Y?

All AT25XV021A-MHV-Y units undergo pre-shipment inspection (PSI). If there is an issue with AT25XV021A-MHV-Y, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AT25XV021A-MHV-Y part is unused and in its original packaging.

Return procedure for AT25XV021A-MHV-Y:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AT25XV021A-MHV-Y Tags

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