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Renesas AT25XV041B-MAHV-T
- Part No.:
- AT25XV041B-MAHV-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-UFDFN Exposed Pad
- Datasheet:
-
AT25XV041B-MAHV-T.pdf
- Description:
- IC FLASH 4MBIT SPI 85MHZ 8UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:870
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Product details
Overview
AT25XV041B-MAHV-T from Renesas Electronics is a 4-Mbit serial SPI Flash memory IC supporting dual-I/O operation, 1.65 V–4.4 V single-supply operation, and 85 MHz maximum clock frequency. It delivers 7.5 ns clock-to-output timing, 256-byte page erase, and hardware write protection via WP pin for embedded code shadowing and over-the-air firmware updates in battery-powered IoT edge nodes.
For engineers reviewing the AT25XV041B-MAHV-T datasheet, AT25XV041B-MAHV-T pinout, AT25XV041B-MAHV-T application, or AT25XV041B-MAHV-T equivalent, key selection criteria include ultra-deep power-down current (200 nA), OTP security register (128 bytes), industrial temperature range support, and compatibility with SPI Modes 0/3 across SOIC, UDFN, TSSOP, and WLCSP packages.
Technical Context
The AT25XV041B-MAHV-T implements a flexible erase architecture with four granularities-256-byte page, 4-kByte block, 32-kByte block, and 64-kByte block-enabling efficient co-location of code and data segments. Its dual-I/O read mode doubles effective throughput by outputting two bits per SCK falling edge using SI (I/O0) and SO (I/O1).
Internal control logic supports active status interrupt signaling to wake host MCUs after program/erase completion, while hardware locking via the WP pin and software-controlled sector protection provide layered data integrity. The device requires no auxiliary voltage for programming or erasing and features automatic erase/program failure detection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (512 KByte) nonvolatile Flash array optimized for code + data storage |
| Supply Voltage | 1.65 V to 4.4 V single rail-enables direct interface with Li-ion, Li-poly, and coin-cell batteries |
| Max Clock Frequency | 85 MHz-supports high-speed read access with minimal latency in real-time firmware execution |
| Read Timing (tV) | 7.5 ns clock-to-output-reduces instruction fetch delay in code-shadowing architectures |
| Erase Granularity | 256-byte page / 4-kByte / 32-kByte / 64-kByte blocks-minimizes wasted space during partial firmware updates |
| Power-Down Current | 200 nA ultra-deep power-down-extends battery life in always-on sensor nodes and wearables |
| OTP Security Register | 128-byte one-time programmable register with 64-byte factory-unique ID-enables secure device serialization and ESN binding |
Pinout & Package
AT25XV041B-MAHV-T is packaged in an 8-lead SOIC (150-mil) with standard JEDEC footprint. Pin functions are electrically validated per Renesas DS-AT25XV041B-091 Rev. G.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable signal; initiates command latching on high-to-low transition and terminates operations on low-to-high transition |
| SCK | Serial Clock | Master-generated clock; commands and addresses latched on rising edge, data output on falling edge |
| SI (I/O0) | Serial Input / Dual-I/O Data 0 | Primary command/address/data input; becomes bidirectional I/O0 during dual-output read for concurrent bit transfer |
| SO (I/O1) | Serial Output / Dual-I/O Data 1 | Primary data output; remains active I/O1 in dual-I/O mode to deliver second bit per SCK cycle |
| WP | Write Protect | Hardware lock control; low assertion enables sector-level hardware protection independent of software commands |
| HOLD | Communication Pause | Active-low suspend signal; halts SPI transaction without deselecting device or resetting internal state |
| VCC | Power Supply | Single 1.65–4.4 V supply rail-eliminates need for charge pumps or external regulators |
| GND | Ground Reference | Common return path for all digital and analog circuitry; required for stable read/write margins |
Key Features
| Feature | Design Value |
|---|---|
| Dual-I/O Read Mode | Delivers 2× effective read bandwidth vs. standard SPI by clocking two bits per SCK falling edge using SI/SO as I/O0/I/O1 |
| Ultra-Deep Power-Down | 200 nA typical current draw enables multi-year operation on coin-cell batteries in maintenance-free edge sensors |
| Flexible Erase Architecture | Four erase granularities (256B/4kB/32kB/64kB) allow precise allocation of firmware code, configuration, and logging data without over-erasure |
| OTP Security Register | 128-byte field with factory-programmed 64-byte unique ID supports cryptographic key binding and anti-cloning in disposable medical devices |
| Status Interrupt Output | Active-low interrupt pin signals host MCU upon completion of self-timed program/erase cycles-eliminates polling overhead |
Applications
| Firmware Storage in Wearables | Secure Bootloader in Medical Sensors |
|---|---|
Use Scenario: Storing updatable firmware images and calibration tables in compact wearable health monitors powered by CR2032 coin cells. IC Role / Device Role / Timing Role: Nonvolatile code storage with fast 85 MHz read access and ultra-low 200 nA deep power-down current to maximize battery lifetime. Use Value: Enables multi-year operation without battery replacement while supporting secure OTA firmware patches via 256-byte page erase. | Use Scenario: Hosting cryptographically signed bootloader and device-specific keys in Class IIa wireless medical sensors requiring FDA-compliant traceability. IC Role / Device Role / Timing Role: Secure storage element with 128-byte OTP register containing factory-unique ID and user-programmable keys for secure boot validation. Use Value: Prevents unauthorized firmware loading through hardware-enforced write protection and immutable device identity binding. |
| Industrial Edge Node Configuration | Smart Meter Firmware Update |
Use Scenario: Retaining network credentials, sensor calibration offsets, and operational logs in battery-backed industrial gateways deployed in remote locations. IC Role / Device Role / Timing Role: Dual-purpose data/code storage with uniform 4-kByte block erase for rapid configuration updates and 32-kByte blocks for firmware delta patches. Use Value: Reduces update time and flash wear by erasing only required segments-no full-chip erase needed for parameter changes. | Use Scenario: Supporting A/B firmware partitioning and rollback capability in ANSI C12.22-compliant smart electricity meters with limited onboard memory. IC Role / Device Role / Timing Role: High-reliability Flash memory with 100,000 program/erase cycles and 20-year data retention under industrial temperature range (−40°C to +85°C). Use Value: Guarantees 15+ years of field operation with guaranteed data integrity for regulatory compliance and utility billing accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q40EW | 4 Mbit density, 1.7–1.95 V supply, 133 MHz max clock, no OTP register, 2.5 µA deep power-down | Lacks OTP security register and ultra-deep power-down mode; better suited for cost-sensitive consumer electronics than secure, ultra-low-power IoT | Select when higher speed and lower unit cost outweigh security and sub-µA power requirements |
| Micron MT25QL04A | 4 Mbit density, 2.7–3.6 V supply, 133 MHz max clock, 128-byte OTP, 2 µA deep power-down | Narrower voltage range excludes direct Li-ion/Li-poly use; deeper power-down not available below 2 µA | Choose for industrial systems with stable 3.3 V rails where higher speed and proven qualification outweigh ultra-low-voltage flexibility |
Compared with W25Q40EW and MT25QL04A, AT25XV041B-MAHV-T uniquely combines 1.65 V operation, 200 nA ultra-deep power-down, and factory-programmed unique ID-making it optimal for battery-constrained, security-aware edge nodes where voltage headroom and multi-year autonomy are critical.
Availability
AT25XV041B-MAHV-T is available at Aetrix Electronics and suitable for firmware storage in wearables, secure bootloader implementation in medical sensors, and configuration retention in industrial edge nodes requiring stable component supply across extended product lifecycles.
Supply support for AT25XV041B-MAHV-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, infrastructure, and IoT applications.
The AT25XV041B-MAHV-T belongs to Renesas' serial Flash memory product line, engineered specifically for ultra-low-power, secure, and voltage-flexible embedded systems-including battery-operated sensors, wearables, and certified medical devices.
FAQ
What is the operating voltage range of the AT25XV041B-MAHV-T?
The AT25XV041B-MAHV-T operates across a single supply voltage range of 1.65 V to 4.4 V. This wide range allows direct integration with modern lithium-based batteries-including Li-ion, Li-poly, and coin cells-without requiring external voltage regulation. The AT25XV041B-MAHV-T maintains full functionality, including 85 MHz operation and 7.5 ns tV, across this entire range as verified in Renesas DS-AT25XV041B-091 Rev. G Section 13.2.
Does the AT25XV041B-MAHV-T support dual-I/O read mode, and how does it improve performance?
Yes, the AT25XV041B-MAHV-T supports dual-output read mode using SI (I/O0) and SO (I/O1) pins. In this mode, two bits are transferred per SCK falling edge, effectively doubling read throughput versus standard single-I/O SPI. This reduces firmware fetch latency in code-shadowing applications and accelerates OTA update verification. The AT25XV041B-MAHV-T implements this per command 03h (standard read) and 3Bh (dual-output read) as defined in Section 7.2 of the datasheet.
What security features does the AT25XV041B-MAHV-T provide for device authentication?
The AT25XV041B-MAHV-T includes a 128-byte one-time programmable (OTP) security register, with 64 bytes factory-programmed with a unique identifier and 64 bytes user-programmable. This enables secure device serialization, electronic serial number (ESN) binding, and locked key storage. Hardware write protection via the WP pin and software-controlled sector locking further prevent unauthorized modification. These features are documented in Sections 10 and 9 of the AT25XV041B-MAHV-T datasheet.
How does the AT25XV041B-MAHV-T minimize power consumption in always-on applications?
The AT25XV041B-MAHV-T achieves ultra-low power via three modes: 25 µA standby, 5 µA deep power-down, and 200 nA ultra-deep power-down. The latter enables multi-year operation on coin cells in maintenance-free edge sensors. Entry into ultra-deep mode requires issuing the 79h command followed by CS deassertion, and exit uses a specific chip-select toggle sequence. All values are specified in Section 13.3 of the AT25XV041B-MAHV-T datasheet.
What erase block sizes does the AT25XV041B-MAHV-T support, and why does granularity matter?
The AT25XV041B-MAHV-T supports 256-byte page erase, plus uniform 4-kByte, 32-kByte, and 64-kByte block erase. This multi-level granularity prevents over-erasure during partial firmware updates or configuration changes-preserving data integrity and extending flash endurance. For example, updating a 1.2 kB parameter table requires only one 4-kByte block erase instead of a full 64-kByte sector, reducing wear and latency. Details appear in Section 8 of the AT25XV041B-MAHV-T datasheet.
AT25XV041B-MAHV-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 85 MHz
- Write Cycle Time - Word, Page:
- 8µs, 2.75ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 4.4V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-UDFN (2x3)
AT25XV041B-MAHV-T FAQ
1.How can I place an order for AT25XV041B-MAHV-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT25XV041B-MAHV-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT25XV041B-MAHV-T reliable?
The price and inventory of AT25XV041B-MAHV-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT25XV041B-MAHV-T is usually 5 days.
3.What payment methods are accepted for AT25XV041B-MAHV-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT25XV041B-MAHV-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT25XV041B-MAHV-T?
AT25XV041B-MAHV-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT25XV041B-MAHV-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT25XV041B-MAHV-T?
For technical support, including AT25XV041B-MAHV-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT25XV041B-MAHV-T requirements.
6.How does Aetrix verify that AT25XV041B-MAHV-T is sourced from the original manufacturer or authorized distributors?
All AT25XV041B-MAHV-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT25XV041B-MAHV-T meets industry standards.
7.What is the process for return or replacement of AT25XV041B-MAHV-T?
All AT25XV041B-MAHV-T units undergo pre-shipment inspection (PSI). If there is an issue with AT25XV041B-MAHV-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT25XV041B-MAHV-T part is unused and in its original packaging.
Return procedure for AT25XV041B-MAHV-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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