Microchip Technology AT28C010-12PU

Overview

AT28C010-12PU from Atmel is a 1-Mbit (128K × 8) paged parallel EEPROM with JEDEC-standard byte-wide pinout, 120 ns read access time, single 5V ±10% supply, and industrial temperature range (−40°C to +85°C). It supports automatic page write of up to 128 bytes, DATA polling for write completion detection, and hardware/software data protection - used in firmware storage, configuration memory, and boot code retention in embedded controllers.

For engineers reviewing the AT28C010-12PU datasheet, AT28C010-12PU pinout, AT28C010-12PU application, or AT28C010-12PU equivalent, key selection criteria include verified 120 ns read timing, 10 ms max page write cycle, CMOS/TTL-compatible I/O, JEDEC-compliant 32-pin PDIP package, and endurance of 10⁴ write cycles - all confirmed for this exact variant.

Technical Context

The AT28C010-12PU operates as a drop-in SRAM-compatible nonvolatile memory: reads require CE and OE low with WE high; writes initiate on WE or CE falling edge with OE high. Its internal 128-byte page register latches address and data, freeing the bus during autonomous internal programming timed by an on-chip control timer.

Write completion is signaled via DATA polling (I/O7 complement → true data) or toggle-bit detection (I/O6 toggling ceases), both usable at any point during t_WC. Hardware protection includes V_CC sense (<3.8 V inhibits write), 5 ms power-on delay, and noise filtering (<15 ns pulses ignored); software protection uses a 3-byte command sequence to enable/disable write lock.

Key Specifications

Pinout & Package

AT28C010-12PU is supplied in a 32-lead plastic dual inline package (PDIP), 0.600" wide, with JEDEC-standard byte-wide pinout and pin 1 located at bottom-left corner when viewed from top with notch facing up.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar paged parallel EEPROM applications.

Compared with AT28C010-12PU, AT28C256-15PU offers lower cost and footprint for smaller code images but sacrifices density and speed; MX28F1000PC-12 provides flash endurance advantages but demands additional firmware complexity for erase handling and lacks autonomous page write - making AT28C010-12PU optimal for SRAM-like simplicity and deterministic timing.

Availability

AT28C010-12PU is available at Aetrix Electronics and suitable for industrial control systems, medical instrumentation, and legacy system upgrades requiring stable component supply, long-lifecycle support, and verified 5V parallel EEPROM functionality.

Supply support for AT28C010-12PU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Atmel Corporation (now part of Microchip Technology) is a fabless semiconductor company specializing in microcontrollers, nonvolatile memory, and security ICs, with a legacy of high-reliability industrial-grade products.

The AT28C010 belongs to Atmel's parallel EEPROM product line, designed specifically for 5V embedded systems needing SRAM-compatible nonvolatile storage with robust write protection and page-level programming efficiency.

FAQ

What is the maximum page write size supported by the AT28C010-12PU?

The AT28C010-12PU supports page write operations of 1 to 128 bytes per internal programming cycle. All bytes must reside within the same 128-byte page, defined by address bits A7–A16. This capability is implemented in silicon and confirmed in the AT28C010-12PU datasheet section 4.3, enabling efficient firmware updates without external buffering logic.

Does the AT28C010-12PU require a 12V programming voltage?

No, the AT28C010-12PU operates exclusively from a single 5V ±10% supply for both read and write operations. The 12V requirement applies only to the optional device identification area (1FF80H–1FFFFH), not to standard memory array access or page writes. All functional specifications for AT28C010-12PU - including t_WC, t_ACC, and endurance - are guaranteed under 5V operation.

How does hardware write protection work on the AT28C010-12PU?

AT28C010-12PU hardware protection includes four mechanisms: (1) V_CC sense disabling writes below ~3.8 V; (2) 5 ms internal power-on delay after V_CC stabilization; (3) write inhibition when CE is high, OE is low, or WE is high; and (4) noise filtering rejecting input pulses <15 ns. These features are inherent to the AT28C010-12PU die and require no external components.

Can the AT28C010-12PU be used as a direct replacement for standard SRAM in existing designs?

Yes - the AT28C010-12PU is accessed identically to static RAM during reads (CE/OE low, WE high) and supports the same JEDEC byte-wide pinout. However, write cycles require proper timing compliance (t_WP, t_DS) and write completion detection (DATA polling or toggle bit). The AT28C010-12PU retains data without power, unlike SRAM, making it suitable for nonvolatile drop-in use where write frequency is low.

What is the endurance rating of the AT28C010-12PU and how is it validated?

The AT28C010-12PU is rated for 10,000 write/erase cycles per memory location, as specified in the "High Reliability CMOS Technology" section of its datasheet. This endurance value is measured and guaranteed across the full industrial temperature range (−40°C to +85°C) and applies to both byte and page write operations. No "E" suffix (e.g., AT28C010E) appears in the AT28C010-12PU ordering code, confirming the standard 10⁴-cycle rating.