Microchip Technology AT28C010E-12TI

Overview

AT28C010E-12TI from Atmel is a 1-Mbit (128K × 8) paged parallel EEPROM with JEDEC-standard byte-wide pinout, 120 ns read access time, 10 ms maximum page write cycle, and industrial temperature range (–40°C to +85°C). It supports hardware/software data protection, DATA polling, and toggle-bit write completion detection for embedded firmware storage in PLCs, industrial controllers, and instrumentation.

For engineers reviewing the AT28C010E-12TI datasheet, AT28C010E-12TI pinout, AT28C010E-12TI application, or AT28C010E-12TI equivalent, this device delivers verified high-endurance (10⁵ cycles), CMOS/TTL-compatible I/O, single 5V ±10% supply operation, and page-write capability across 128-byte boundaries - critical for reliable field-upgradable configuration memory.

Technical Context

The AT28C010E-12TI implements a paged architecture with an internal 128-byte register that latches address and data during write initiation, freeing the bus for concurrent operations. Its write control uses dual-line enable logic (CE/WE) and supports both byte and page modes with strict timing constraints (tBLC ≤ 150 µs between bytes).

It integrates VCC-sense circuitry (write inhibit below 3.8 V), 5 ms power-on delay, noise filtering (<15 ns pulse rejection), and software data protection (SDP) via three-byte command sequences. Device identification space (128 bytes at 1FF80H–1FFFFH) is accessible with A9 = 12 V ±0.5 V.

Key Specifications

Pinout & Package

AT28C010E-12TI is supplied in a 32-lead Plastic J-leaded Chip Carrier (PLCC) package per JEDEC MS-016 AE. Pin 1 is designated "Don't Connect" (DC); all NC pins must remain unconnected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar paged parallel EEPROM applications.

Compared with AT28C010-12TI, the AT28C010E-12TI provides 10× higher endurance for field-upgradable systems, while MX28F1000PC-12 demands more complex power and timing control - making AT28C010E-12TI optimal for new industrial designs needing robust, self-contained nonvolatile storage.

Availability

AT28C010E-12TI is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostics equipment, and telecom base stations requiring stable component supply, long-lifecycle support, and guaranteed industrial-temperature-grade availability.

Supply support for AT28C010E-12TI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Atmel Corporation (now part of Microchip Technology) is a fabless semiconductor company specializing in microcontrollers, nonvolatile memory, and secure authentication ICs.

The AT28C010E-12TI belongs to Atmel's parallel EEPROM product line, designed specifically for byte- and page-level in-system reprogrammability in industrial, telecom, and medical equipment where reliability and ease of integration are critical.

FAQ

What is the endurance rating of the AT28C010E-12TI and how is it validated?

The AT28C010E-12TI is rated for 100,000 write/erase cycles, confirmed by Atmel's accelerated life testing per JEDEC standards. This high-endurance specification applies specifically to the "E" variant and distinguishes it from the standard AT28C010-12TI (10K cycles). The AT28C010E-12TI achieves this through enhanced oxide quality and internal error correction, ensuring consistent performance across its full industrial temperature range.

Does the AT28C010E-12TI require external high voltage for programming?

No, the AT28C010E-12TI operates with a single 5 V ±10% supply for both read and write functions. Unlike older EPROMs or some flash devices, it does not require 12 V or other elevated voltages for programming - all internal charge-pump generation is handled on-die. The 12 V requirement mentioned in the datasheet applies exclusively to accessing the optional device identification area (1FF80H–1FFFFH), not to normal read/write operations of the main memory array.

How does software data protection (SDP) work on the AT28C010E-12TI?

SDP on the AT28C010E-12TI is enabled or disabled using a precise three-byte command sequence written to specific addresses (5555h, 2AAAh, then 5555h for enable; 5555h, 2AAAh, 80h, 5555h, 20h for disable). Once enabled, all subsequent writes to the AT28C010E-12TI must be preceded by this same sequence - otherwise, the internal write timer activates but no data is committed. SDP state persists across power cycles and remains active during power-up/down transitions.

What package type is used for the AT28C010E-12TI and what are its key mechanical features?

The AT28C010E-12TI is packaged in a 32-lead Plastic J-leaded Chip Carrier (PLCC) per JEDEC MS-016 AE. Key features include gull-wing leads for surface-mount assembly, a ceramic-like thermal profile compatible with standard reflow profiles, and pin 1 marked with an index notch and "DC" (Don't Connect) designation. The package measures 1.64–1.67 mm thickness and 18.3–18.5 mm body length, with lead pitch of 1.27 mm.

Can the AT28C010E-12TI be used as a drop-in replacement for standard SRAM in existing designs?

Yes - the AT28C010E-12TI uses JEDEC-approved byte-wide pinout and is accessed like Static RAM during read cycles (CE and OE low, WE high), allowing direct substitution in many 8-bit systems. However, write timing differs: writes require proper WE/CE sequencing and status polling (via I/O7 or I/O6), so existing SRAM write-handling firmware must be modified to accommodate page-write protocols and completion detection - it is not a transparent hardware-only replacement.