Microchip Technology AT28C010E-12UM/883

Overview

AT28C010E-12UM/883 from Microchip Technology is a military-grade 1-Mbit (131,072 × 8) paged parallel EEPROM with 120 ns read access time, JEDEC-standard byte-wide pinout, and single 5V ±10% supply. It supports automatic 1–128-byte page writes with internal latching and timer, operates across −55°C to +125°C, and delivers 300 µA CMOS standby current. It is used in avionics control modules requiring nonvolatile configuration storage with radiation-tolerant packaging.

For engineers reviewing the AT28C010E-12UM/883 datasheet, AT28C010E-12UM/883 pinout, AT28C010E-12UM/883 application, or AT28C010E-12UM/883 equivalent, this page provides verified military-spec electrical parameters, MIL-STD-883 qualified package details (32-pin PGA), DATA polling and toggle-bit write completion detection, hardware/software data protection, and direct alternatives for high-reliability embedded systems.

Technical Context

The AT28C010E-12UM/883 implements a paged architecture with a 128-byte internal register that latches address and data during page write cycles, freeing the bus after initiation. Its dual-line chip enable (CE) and output enable (OE) control enables bus contention avoidance in multiprocessor memory maps.

Write completion is confirmed via I/O7 DATA polling (complement-to-data feedback) or I/O6 toggle-bit behavior-both operable at any point during t_WC ≤ 10 ms. Hardware write inhibition includes V_CC sense (<3.8 V), 5 ms power-on delay, and noise filtering on WE/CE inputs (rejects <15 ns pulses).

Key Specifications

Pinout & Package

AT28C010E-12UM/883 is packaged in a 30-pin Ceramic Pin Grid Array (PGA), compliant with MIL-STD-1835 30U outline. The package features hermetically sealed ceramic construction, gold-plated pins, and military-grade marking per 5962-38267 specification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar EEPROM applications.

Compared with AT28C010E-12UM/883, the AT28C010-12UM/883 offers identical functionality and qualification but differs in part-marking convention, while the DS2502-E48+ trades parallel speed and ruggedness for serial simplicity and lower pin count-making it unsuitable for high-throughput or safety-critical roles.

Availability

AT28C010E-12UM/883 is available at Aetrix Electronics and suitable for avionics control, tactical communications, and nuclear instrumentation requiring stable component supply with guaranteed MIL-STD-883 compliance and long-term obsolescence management.

Supply support for AT28C010E-12UM/883 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a global semiconductor company specializing in microcontrollers, analog devices, and nonvolatile memory solutions for industrial, automotive, and aerospace markets.

The AT28C010 product line delivers radiation-hardened, high-reliability parallel EEPROMs designed specifically for military and space applications demanding extended temperature operation, hermetic packaging, and rigorous process controls.

FAQ

What is the maximum page write size supported by the AT28C010E-12UM/883?

The AT28C010E-12UM/883 supports page write operations of 1 to 128 bytes per cycle. All bytes must reside within the same 128-byte page boundary defined by address bits A7–A16. Each successive byte must be loaded within 150 µs (t_BLC) of the prior one; exceeding this window triggers automatic internal programming. This capability is documented in Section 5.9 of the DS20006311A datasheet and applies directly to the AT28C010E-12UM/883.

Does the AT28C010E-12UM/883 require a 12 V programming voltage?

No, the AT28C010E-12UM/883 operates from a single 5 V ±10% supply for all read and write functions. A 12 V ±0.5 V voltage on pin A9 is required only for accessing the optional 128-byte device identification area (addresses 1FF80h–1FFFFh), not for standard memory operations. Standard byte and page writes use only 5 V, as specified in Section 5.10 and Table 4-2 of the AT28C010E-12UM/883 datasheet.

How is write completion detected on the AT28C010E-12UM/883?

Write completion on the AT28C010E-12UM/883 is confirmed using two independent methods: DATA polling on I/O7 (which returns the complement of the last written byte until completion) and toggle-bit detection on I/O6 (which toggles between 0 and 1 during active programming). Both methods are functional at any time during the ≤10 ms write cycle and eliminate the need for fixed delays. These mechanisms are fully characterized in Sections 5.14 and 5.16 of the AT28C010E-12UM/883 datasheet.

Is the AT28C010E-12UM/883 pin-compatible with standard 27C512 EPROMs?

Yes, the AT28C010E-12UM/883 uses a JEDEC-approved byte-wide pinout identical to 27C512 EPROMs, enabling direct socket replacement in existing designs. Pin assignments for A0–A16, I/O0–I/O7, CE, OE, WE, VCC, and GND match exactly. However, unlike EPROMs, the AT28C010E-12UM/883 requires no UV erasure and supports in-system reprogramming-making it a true drop-in upgrade for legacy EPROM-based systems.

What MIL-STD-883 test methods apply to the AT28C010E-12UM/883?

The AT28C010E-12UM/883 is qualified per MIL-STD-883 Method 1010.8 (temperature cycling), 2013.7 (steady-state life), and 5005.4 (fine-leak hermeticity), as documented in its 5962-38267 specification listing. These tests validate performance across −55°C to +125°C, mechanical robustness under thermal stress, and seal integrity essential for long-duration deployment in sealed military enclosures. This qualification is explicitly tied to the AT28C010E-12UM/883 part number in Microchip's packaging documentation.