Microchip Technology AT28LV010-20TU

Overview

AT28LV010-20TU from Atmel is a 1 Mbit (128K × 8) low-voltage paged parallel EEPROM with JEDEC-standard byte-wide pinout, 3.3 V ± 10% supply, 200 ns read access time, and 10 ms maximum page write cycle time. It operates across the industrial temperature range (–40°C to +85°C) and supports 1–128-byte page writes for embedded firmware storage in microcontroller-based systems.

For engineers reviewing the AT28LV010-20TU datasheet, AT28LV010-20TU pinout, AT28LV010-20TU application, or AT28LV010-20TU equivalent, key selection criteria include its CMOS standby current (20 µA), software/hardware data protection, DATA polling and toggle-bit write completion detection, and compatibility with static RAM-like bus interfacing without external timing logic.

Technical Context

The AT28LV010-20TU implements a paged write architecture with an internal 128-byte latch and autonomous control timer, enabling burst loading of up to 128 bytes before initiating internal programming. Address latching occurs on the falling edge of WE or CE (whichever is later), and data latching on the rising edge of either signal (whichever is earlier).

Write operations require a three-byte Software Data Protection (SDP) command sequence (0x5555/0x2AAA/0x5555) prior to each page or byte write. The device uses DATA polling on I/O7 and toggle-bit behavior on I/O6 to signal write completion-both detectable at any point during the internal 10 ms programming window.

Key Specifications

Pinout & Package

AT28LV010-20TU is available in 32-lead TSOP (32T) package: 8 mm × 20 mm body, 0.5 mm pitch, gull-wing leads, JEDEC MO-142 BD compliant. Pin 1 marked via corner cut; no exposed pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar paged parallel EEPROM applications.

Compared with AT28C010-15PU and MN63F1002APL, the AT28LV010-20TU uniquely combines 3.3 V operation, JEDEC-compliant parallel pinout, hardware/software write protection, and industrial temperature support - making it the only option for upgrading legacy SRAM-based systems to nonvolatile storage without board redesign.

Availability

AT28LV010-20TU is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostics equipment, telecom line cards, and automotive body control modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant green packaging.

Supply support for AT28LV010-20TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Atmel Corporation (now part of Microchip Technology) is a fabless semiconductor company specializing in microcontrollers, nonvolatile memory, and secure authentication ICs for industrial, automotive, and consumer applications.

The AT28LV010 belongs to Atmel's low-voltage parallel EEPROM product line, designed specifically to replace battery-backed SRAM and EPROM in 3.3 V embedded systems requiring reliable, page-erasable nonvolatile storage with minimal design change.

FAQ

What is the minimum VCC voltage required for reliable operation of the AT28LV010-20TU?

The AT28LV010-20TU requires VCC ≥ 2.97 V (3.3 V − 10%) for guaranteed specification compliance. Below 2.97 V, the internal power-on delay may not complete, and write operations are inhibited. Operation below 2.0 V disables all functionality, including read access. Always verify VCC stability under load using a 100 nF ceramic capacitor placed within 5 mm of the VCC pin.

Does the AT28LV010-20TU support true random-access byte writes without page constraints?

No. The AT28LV010-20TU does not support true random-access byte writes. All writes must occur within the same 128-byte page defined by address bits A7–A16. Writing across page boundaries requires separate page write cycles. Each page write still requires the full SDP command sequence, and bytes outside the selected A0–A6 range within the page remain unmodified.

How is write completion detected on the AT28LV010-20TU without using polling loops?

The AT28LV010-20TU provides two hardware-assisted methods: DATA polling on I/O7 (complement → true data transition) and toggle-bit detection on I/O6 (toggling → steady state). Either method can be sampled asynchronously - no fixed delay or loop counter is needed. Toggle-bit detection works with any address; DATA polling requires reading the last written byte location.

Can the AT28LV010-20TU be used as a direct replacement for standard SRAM in existing designs?

Yes - for read operations, the AT28LV010-20TU behaves identically to a 128K × 8 SRAM with identical timing (200 ns tACC) and JEDEC-standard pinout. However, write operations require SDP command sequencing and 10 ms internal programming time, so the host must implement write enable logic and status checking - unlike SRAM's instantaneous writes.

Is the extra 128-byte EEPROM section in the AT28LV010-20TU accessible to the user?

Yes. The AT28LV010-20TU includes an additional 128 bytes of dedicated EEPROM for device identification or tracking, located at addresses 0x1FF80–0x1FFFF. This region is fully user-accessible via standard read/write commands and supports the same endurance and retention specs as main memory, but is physically isolated and not affected by main array erase cycles.