Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology AT45DB011-SI

Part No.:
AT45DB011-SI
Manufacturer:
Microchip Technology
Category:
Memory
Package:
8-SOIC (0.209", 5.30mm Width)
Datasheet:
AetrixAT45DB011-SI.pdf
Description:
IC FLASH 1MBIT SPI 15MHZ 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,319

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AT45DB011-SI from Microchip Technology is a 1-Mbit serial DataFlash memory IC operating from a single 2.7V–3.6V supply, organized as 512 pages × 264 bytes with one 264-byte SRAM buffer, supporting SPI Modes 0 and 3, and used for in-system reprogrammable data storage in industrial embedded systems.

For engineers reviewing the AT45DB011-SI datasheet, AT45DB011-SI pinout, AT45DB011-SI application, or AT45DB011-SI equivalent, this page delivers verified technical context, real-world timing behavior (7 ms page program, 120 µs page-to-buffer transfer), hardware write protection via WP pin, RDY/BUSY signaling, and industrial-temperature (-40°C to +85°C) operation - all critical for reliable firmware/data logging designs.

Technical Context

The AT45DB011-SI implements a serial Flash architecture with dual-level memory hierarchy: main array (512 × 264 B) and dedicated 264-byte SRAM buffer, enabling page-at-a-time programming without external erase cycles. Its command set includes buffer-managed operations (e.g., 53H page-to-buffer transfer, 83H buffer-to-page program with built-in erase).

It uses SPI-compatible three-wire interface (CS/SCK/SI/SO) with hardware flow control via open-drain RDY/BUSY pin and optional page-level write protection via active-low WP pin. Internal self-timed timers manage all erase/program operations, eliminating need for external timing control.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Capacity1,081,344 bits (512 pages × 264 bytes), sufficient for firmware patch storage or sensor log buffers
Supply Voltage2.7V–3.6V single supply - eliminates level-shifting in 3.3V systems
Max Clock Frequency13 MHz - enables ~1.6 MB/s serial throughput during burst reads
Page Program Time7 ms typical - defines minimum interval between consecutive page writes
Page-to-Buffer Transfer120 µs typical - enables rapid data staging before modification
Active Read Current4 mA typical at 13 MHz - determines power budget for continuous polling or streaming
Standby Current2 µA typical - supports ultra-low-power sleep modes in battery-operated devices
Operating Temperature-40°C to +85°C - qualified for industrial control, automotive body electronics, and outdoor IoT nodes

Pinout & Package

AT45DB011-SI is packaged in a 14-lead TSSOP (14X) with 0.170" width, footprint compatible with JEDEC MO-153, suitable for high-density PCB layouts and automated assembly.

Pin/TerminalCircuit RoleDesign Meaning
CSChip SelectActive-low enable for SPI command initiation; must remain low during full instruction sequence
SCKSerial ClockEdge-triggered clock input supporting SPI Modes 0 (low idle) and 3 (high idle)
SISerial InputMSB-first data input for opcodes, addresses, and buffer writes
SOSerial OutputMSB-first data output for reads and status register; tri-stated on CS high
WPHardware Write ProtectLow = lock first 256 pages; internal pull-up allows omission if unused
RESETChip ResetActive-low hard reset; internally pulled up; no external pull required but recommended
RDY/BUSYOpen-Drain Status IndicatorPulled low during self-timed operations (erase/program/transfer); requires external pull-up
VCC, GNDPower SupplySingle 2.7–3.6V rail; decoupling capacitor mandatory per layout guidelines

Key Features

FeatureDesign Value
Single-cycle page erase+programEliminates separate erase step - simplifies firmware update logic and reduces latency
264-byte SRAM bufferEnables atomic page modification: read-modify-write without host RAM buffering
Hardware page write protectPrevents accidental overwrite of boot code or calibration data in first 256 pages
RDY/BUSY pin with status register bit 7Provides hardware- and software-polling options for operation completion detection
Industrial temperature rangeValidated operation from -40°C to +85°C - supports deployment in harsh environments
Self-timed internal timersRemoves need for precise host-controlled timing sequences - improves system robustness

Applications

Firmware Update StorageData Logging Buffer

Use Scenario: Storing field-upgradable firmware images in industrial PLCs where power loss during update must not corrupt running code.

IC Role / Device Role / Timing Role: Nonvolatile storage for validated binary payloads; leverages page-level erase isolation and WP pin to safeguard active bank.

Use Value: Enables safe A/B firmware partitioning using only 512 pages - no external controller needed for atomic swap.

Use Scenario: Capturing timestamped sensor readings (e.g., temperature, pressure) in remote environmental monitors with intermittent connectivity.

IC Role / Device Role / Timing Role: Circular buffer for burst capture; uses fast 120 µs page-to-buffer transfer to offload host MCU during acquisition.

Use Value: Sustains 100+ Hz sampling for >2 hours using 264-byte buffer + 512-page array - minimizes host intervention.

Digital Voice RecordingConfiguration Parameter Store

Use Scenario: Storing voice prompts or alarm messages in medical devices requiring guaranteed playback integrity after power cycles.

IC Role / Device Role / Timing Role: Sequential-access audio frame store; exploits linear page addressing and 7 ms program time for real-time encoding.

Use Value: Delivers deterministic 13 MHz SPI read throughput - eliminates audio stutter during playback from main memory.

Use Scenario: Retaining calibrated sensor offsets, network credentials, and user preferences in smart meters across 10+ year service life.

IC Role / Device Role / Timing Role: EEPROM-replacement storage with 100,000+ endurance cycles per page; uses Auto Page Rewrite (58H) to extend wear life.

Use Value: Achieves >100k write cycles via wear-leveling algorithms - exceeds EEPROM endurance without extra firmware overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AT45DB011B-SISuccessor revision with enhanced reliability, same pinout and command set; supports identical 2.7–3.6V supply and industrial temp range.Drop-in replacement for new designs; legacy AT45DB011-SI remains valid for existing production.Select AT45DB011B-SI for new designs per Microchip recommendation; verify compatibility with existing firmware command sequences.
W25Q80DVSSIG8-Mbit Quad SPI Flash (Winbond); higher density, faster 104 MHz QSPI interface, but requires different command protocol and lacks integrated SRAM buffer.Not suitable for buffer-dependent operations (e.g., auto page rewrite); better for high-throughput code XIP or large log storage.Choose only if migrating to QSPI infrastructure and redesigning driver layer; not a functional substitute for AT45DB011-SI's buffer-centric workflow.

Compared with AT45DB011-SI, AT45DB011B-SI offers improved process yield and long-term supply assurance while maintaining full electrical and functional equivalence; W25Q80DVSSIG provides greater capacity and speed but sacrifices the integrated SRAM buffer and simplified page-managed command model essential to AT45DB011-SI's use cases.

Availability

AT45DB011-SI is available at Aetrix Electronics and suitable for industrial control systems, embedded data loggers, and medical device firmware storage requiring stable component supply across extended product lifecycles.

Supply support for AT45DB011-SI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, and nonvolatile memory solutions for industrial, automotive, and consumer markets.

The AT45DB011-SI belongs to Microchip's DataFlash family - designed specifically for systems needing simple, reliable, low-pin-count serial Flash with integrated buffer management to replace parallel NOR/NAND or EEPROM in resource-constrained embedded applications.

FAQ

What is the maximum clock frequency supported by the AT45DB011-SI?

The AT45DB011-SI supports a maximum SCK frequency of 13 MHz, as specified in its AC characteristics table. This timing enables efficient data transfer during read, write, and status polling operations. The device maintains signal integrity and timing compliance across its full industrial temperature range (-40°C to +85°C), and operation above 13 MHz is not guaranteed and may result in command failures or data corruption. Always observe setup/hold times (e.g., tSU = 10 ns, tH = 20 ns) when interfacing with host controllers.

Does the AT45DB011-SI require a high-voltage programming supply?

No, the AT45DB011-SI does not require a high-voltage programming supply. It operates entirely from a single 2.7V–3.6V supply for both read and program/erase functions. All internal voltage boosting is handled on-chip, eliminating the need for external charge pumps or 12V rails. This simplifies power design and enhances system safety - a key advantage over traditional parallel Flash devices. The AT45DB011-SI achieves this using proprietary internal circuitry that generates necessary programming voltages from VCC.

How does the hardware write protection (WP pin) function on the AT45DB011-SI?

When the WP pin on the AT45DB011-SI is driven low, it permanently disables programming and erasure of the first 256 pages (pages 0–255) of main memory. Pages 256–511 remain fully writable. The WP pin is internally pulled high, so leaving it unconnected defaults to unprotected mode. For robust protection, Microchip recommends externally driving WP high via a pull-up resistor - especially in noisy industrial environments where floating pins could cause unintended lock/unlock behavior.

Can the AT45DB011-SI be used in SPI Mode 0 or only Mode 3?

The AT45DB011-SI is explicitly compatible with both SPI Mode 0 (CPOL = 0, CPHA = 0) and SPI Mode 3 (CPOL = 1, CPHA = 0), as confirmed in its datasheet features and timing diagrams. The device automatically detects the inactive clock polarity on each falling edge of CS and adapts accordingly. This dual-mode support allows seamless integration with diverse host MCUs - whether legacy 8-bit controllers using Mode 0 or modern ARM-based SoCs defaulting to Mode 3 - without hardware or firmware changes.

What is the purpose of the 264-byte SRAM buffer in the AT45DB011-SI?

The 264-byte SRAM buffer in the AT45DB011-SI serves as an intermediate staging area for data manipulation prior to committing to Flash. It enables critical operations like Main Memory Page to Buffer Transfer (53H), Buffer Write (84H), and Auto Page Rewrite (58H), allowing atomic read-modify-write sequences without host RAM involvement. This buffer eliminates the need for external memory in space-constrained designs and ensures data integrity during partial-page updates - a core architectural advantage distinguishing AT45DB011-SI from standard SPI Flash devices.

AT45DB011-SI Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
8-SOIC (0.209", 5.30mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
1Mbit
Memory Organization:
264 Bytes x 512 pages
Memory Interface:
SPI
Clock Frequency:
15 MHz
Write Cycle Time - Word, Page:
15ms
Access Time:
-
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

AT45DB011-SI FAQ

1.How can I place an order for AT45DB011-SI through Aetrix?

Please submit a Request for Quotation (RFQ) for AT45DB011-SI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AT45DB011-SI reliable?

The price and inventory of AT45DB011-SI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB011-SI is usually 5 days.

3.What payment methods are accepted for AT45DB011-SI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB011-SI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AT45DB011-SI?

AT45DB011-SI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AT45DB011-SI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AT45DB011-SI?

For technical support, including AT45DB011-SI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB011-SI requirements.

6.How does Aetrix verify that AT45DB011-SI is sourced from the original manufacturer or authorized distributors?

All AT45DB011-SI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB011-SI meets industry standards.

7.What is the process for return or replacement of AT45DB011-SI?

All AT45DB011-SI units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB011-SI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AT45DB011-SI part is unused and in its original packaging.

Return procedure for AT45DB011-SI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AT45DB011-SI Tags

  • AT45DB011-SI
  • AT45DB011-SI PDF
  • AT45DB011-SI Datasheet
  • AT45DB011-SI Specifications
  • AT45DB011-SI Images
  • Microchip Technology
  • Microchip Technology AT45DB011-SI
  • Buy AT45DB011-SI
  • AT45DB011-SI Price
  • AT45DB011-SI Distributor
  • AT45DB011-SI Supplier
  • AT45DB011-SI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER