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Renesas AT45DB021E-MHN2B-T
- Part No.:
- AT45DB021E-MHN2B-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-UDFN Exposed Pad
- Datasheet:
-
AT45DB021E-MHN2B-T.pdf
- Description:
- IC FLASH 2MBIT SPI 70MHZ 8UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,950
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Product details
Overview
AT45DB021E-MHN2B-T from Renesas Electronics is a 2-Mbit serial DataFlash memory with extra 64 kbits, operating from 1.65 V to 3.6 V, supporting SPI modes 0 and 3, RapidS™ high-speed interface up to 85 MHz, and featuring one 256/264-byte SRAM buffer. It delivers 6 ns clock-to-output time and 100,000 program/erase cycles per page for embedded firmware storage in space-constrained industrial controllers.
For engineers reviewing the AT45DB021E-MHN2B-T datasheet, AT45DB021E-MHN2B-T pinout, AT45DB021E-MHN2B-T application, or AT45DB021E-MHN2B-T equivalent, this device offers verified continuous array read, flexible page/sector/chip erase options, hardware/software sector protection, OTP security register, and ultra-deep power-down (200 nA) - critical for low-power IoT node design and secure boot code retention.
Technical Context
The AT45DB021E-MHN2B-T implements a dual-buffered serial Flash architecture with dedicated 256/264-byte SRAM buffer enabling read-modify-write operations without external RAM. Its RapidS™ mode supports high-frequency continuous reads at up to 85 MHz using opcode 0Bh, while legacy and low-power read modes (03h, 01h) provide flexibility across performance and energy budgets.
It uses SPI-compatible three-wire interface (CS, SCK, SI/SO) with rising-edge input sampling and falling-edge output timing. Sector lockdown, individual sector protection, and 128-byte OTP Security Register (64-byte factory ID + 64-byte user-programmable) enable robust firmware integrity and field-upgrade security in certified industrial systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 2,162,688 bits (2 Mbit main + 64 kbit extra), organized as 1,024 pages of 256 or 264 bytes - enables efficient firmware partitioning and E2PROM emulation. |
| Supply voltage | 1.65 V – 3.6 V single supply - supports direct interfacing with 1.8 V and 3.3 V microcontrollers without level shifters. |
| Max clock frequency | 85 MHz (RapidS™ mode) - reduces firmware load time by >3× vs. standard SPI Flash at same VCC. |
| Read latency | 6 ns clock-to-output (tV) - ensures deterministic timing for real-time boot code fetch in safety-critical applications. |
| Power consumption | 200 nA ultra-deep power-down current (typical) - extends battery life in always-on sensor nodes beyond 10 years. |
| Endurance & retention | 100,000 program/erase cycles per page; 20-year data retention - meets industrial lifecycle requirements for unattended equipment. |
| Operating temperature | –40°C to +85°C - qualified for full industrial ambient range without derating. |
Pinout & Package
AT45DB021E-MHN2B-T is packaged in an 8-lead SOIC 208-mil wide (JEDEC MS-012AA) with exposed pad not internally connected - compatible with standard reflow profiles and automated optical inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; must transition low-to-high only after command completion to avoid premature standby entry during self-timed erase. |
| SCK | Serial Clock | Input clock; rising edge latches SI data, falling edge clocks SO data - defines maximum 85 MHz interface timing budget. |
| SI | Serial Input | Command/address/data input; ignored when CS is high - enables daisy-chaining with shared SCK/SO lines. |
| SO | Serial Output | Data output; high-impedance when CS is high - allows multi-device SPI bus sharing without external tri-state logic. |
| WP | Write Protect | Hardware sector lock control; assertion blocks program/erase on protected sectors regardless of software commands. |
| RESET | Hardware Reset | Active-low asynchronous reset; forces device into known state and clears status register - required for recovery after brown-out. |
| VCC | Power Supply | 1.65–3.6 V core supply; powers all logic, memory, and I/O - decoupling capacitor placement directly impacts 85 MHz stability. |
| GND | Ground | Reference return path for VCC and all signals - low-inductance connection essential to meet 6 ns tV specification. |
Key Features
| Feature | Design Value |
|---|---|
| RapidS™ high-speed read | Enables continuous array reads at 85 MHz using opcode 0Bh - cuts firmware load time by 65% vs. standard 33 MHz SPI Flash. |
| User-configurable page size | Factory-set 256-byte or 264-byte pages - optimizes alignment for MCU instruction fetch (256) or metadata+payload packing (264). |
| Buffer-assisted read-modify-write | Self-contained three-step operation (page→buffer→modify→write) eliminates need for external RAM in byte-alterable data logging. |
| Hardware sector lockdown | Permanent read-only locking of any sector via OTP register - prevents accidental or malicious overwrite of bootloader or calibration data. |
| Ultra-deep power-down mode | 200 nA typical current draw with instant wake-up - supports <1 µA system sleep states in battery-powered edge devices. |
Applications
| Firmware Storage | Secure Boot Code |
|---|---|
Use Scenario: Storing MCU application firmware in industrial PLCs where field updates occur infrequently but require guaranteed integrity. IC Role / Device Role / Timing Role: Non-volatile sequential-access code storage with hardware write protection and 20-year retention. Use Value: Eliminates need for external EEPROM backup; sector lockdown prevents corruption during power-loss updates. |
Use Scenario: Holding immutable bootloader code in medical diagnostic equipment requiring IEC 62304 compliance. IC Role / Device Role / Timing Role: Trusted root-of-trust storage with factory-programmed 64-byte unique ID and permanent sector lockdown. Use Value: Enables cryptographic signature verification at boot; OTP register prevents tampering with identity or startup vector. |
| Data Logging Buffer | Low-Power Sensor Node Memory |
Use Scenario: Capturing timestamped sensor readings in environmental monitoring gateways with intermittent connectivity. IC Role / Device Role / Timing Role: High-endurance sequential write buffer supporting 100,000+ page cycles and E2PROM emulation. Use Value: Reduces write amplification vs. standard Flash; buffer-to-page programming minimizes erase overhead per log entry. |
Use Scenario: Providing persistent configuration storage in battery-powered smart meters with 15-year service life. IC Role / Device Role / Timing Role: Ultra-low-power non-volatile memory with 200 nA deep-sleep current and fast wake-up. Use Value: Extends coin-cell battery life beyond 12 years; rapid 85 MHz read enables quick parameter retrieval during wake cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q20EW | 2 Mbit Quad SPI (QSPI), no SRAM buffer, no RapidS™, max 104 MHz QSPI (vs. 85 MHz single-line SPI) | Lacks built-in read-modify-write capability and hardware sector lockdown; requires external logic for byte-alterable emulation | Select for higher throughput in QSPI-capable hosts; avoid when buffer-assisted E2PROM emulation or permanent sector lockdown is required. |
| Macronix MX25L2006E | 2 Mbit standard SPI, no RapidS™, no OTP security register, 256-byte fixed page size, 1 µA deep power-down (vs. 200 nA) | No factory-unique ID or user-programmable security register; lower endurance (10,000 cycles vs. 100,000) | Select for cost-sensitive consumer applications; avoid in medical/industrial designs requiring traceability, long-term reliability, or ultra-low sleep current. |
Compared with W25Q20EW and MX25L2006E, AT45DB021E-MHN2B-T uniquely integrates SRAM buffer, RapidS™ acceleration, OTP security register, and 200 nA ultra-deep power-down - making it the only option among the three that supports secure, low-power, byte-alterable firmware storage without external components.
Availability
AT45DB021E-MHN2B-T is available at Aetrix Electronics and suitable for industrial PLC firmware storage, medical device boot code retention, environmental sensor data logging, and battery-powered smart meter configuration storage requiring stable component supply over extended production lifecycles.
Supply support for AT45DB021E-MHN2B-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The AT45DB021E-MHN2B-T belongs to Renesas' DataFlash family, engineered specifically for reliable, low-pin-count, low-voltage serial code and data storage in resource-constrained embedded systems requiring security and ultra-low power.
FAQ
What is the page size configuration of the AT45DB021E-MHN2B-T?
The AT45DB021E-MHN2B-T supports user-configurable page sizes: factory pre-configured for either 256 bytes or 264 bytes per page. The default is 264 bytes, which accommodates both payload and metadata in a single page. Configuration is set at manufacturing and cannot be changed in-system. This affects addressing sequences and buffer usage in read-modify-write operations, and is documented in Table 21 of the DS-AT45DB021E-8789 datasheet.
Does the AT45DB021E-MHN2B-T support true byte-level writes without erasing entire pages?
No, the AT45DB021E-MHN2B-T does not support true byte-level writes. However, it enables E2PROM-like functionality via a self-contained three-step read-modify-write operation: main memory page → SRAM buffer → modify → buffer-to-main-memory program. This avoids external RAM and preserves endurance by limiting erase cycles to only pages actually modified, unlike conventional Flash requiring full-page erase before any byte update.
How does the RapidS™ mode improve performance over standard SPI operation in the AT45DB021E-MHN2B-T?
RapidS™ mode in the AT45DB021E-MHN2B-T enables continuous array reads at up to 85 MHz using opcode 0Bh, achieving >2× higher effective throughput than standard SPI reads (max 33 MHz with opcode 03h). It eliminates inter-byte delays and supports seamless streaming - critical for fast firmware loading in boot ROM replacement applications. Timing is defined in Figure 24 and Table 26 of the official datasheet.
What security features are implemented in the AT45DB021E-MHN2B-T?
The AT45DB021E-MHN2B-T includes hardware sector protection, software-controllable sector lockdown (permanent read-only), and a 128-byte OTP Security Register with 64 bytes factory-programmed unique ID and 64 bytes user-programmable. These features prevent unauthorized firmware modification, enable device authentication, and support secure boot chains - validated in Sections 9, 10, and 14 of DS-AT45DB021E-8789.
Can the AT45DB021E-MHN2B-T operate reliably at 1.65 V during active read and program operations?
Yes, the AT45DB021E-MHN2B-T is fully specified for all operations - including active read (4.5 mA typical), program, and erase - across the full 1.65 V to 3.6 V supply range. DC Characteristics in Table 34 and AC Characteristics in Table 20 of DS-AT45DB021E-8789 confirm timing and functionality at 1.65 V, making it suitable for direct integration with 1.8 V I/O domains without level translation.
AT45DB021E-MHN2B-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 2Mbit
- Memory Organization:
- 264 Bytes x 1024 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 70 MHz
- Write Cycle Time - Word, Page:
- 8µs, 3ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-UDFN (5x6)
AT45DB021E-MHN2B-T FAQ
1.How can I place an order for AT45DB021E-MHN2B-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB021E-MHN2B-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB021E-MHN2B-T reliable?
The price and inventory of AT45DB021E-MHN2B-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB021E-MHN2B-T is usually 5 days.
3.What payment methods are accepted for AT45DB021E-MHN2B-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB021E-MHN2B-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB021E-MHN2B-T?
AT45DB021E-MHN2B-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB021E-MHN2B-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB021E-MHN2B-T?
For technical support, including AT45DB021E-MHN2B-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB021E-MHN2B-T requirements.
6.How does Aetrix verify that AT45DB021E-MHN2B-T is sourced from the original manufacturer or authorized distributors?
All AT45DB021E-MHN2B-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB021E-MHN2B-T meets industry standards.
7.What is the process for return or replacement of AT45DB021E-MHN2B-T?
All AT45DB021E-MHN2B-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB021E-MHN2B-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB021E-MHN2B-T part is unused and in its original packaging.
Return procedure for AT45DB021E-MHN2B-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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