My Inquiry
My Account
Renesas AT45DB021E-MHN-T
- Part No.:
- AT45DB021E-MHN-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-UDFN Exposed Pad
- Datasheet:
-
AT45DB021E-MHN-T.pdf
- Description:
- IC FLASH 2MBIT SPI 70MHZ 8UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,180
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AT45DB021E-MHN-T from Renesas Electronics is a 2-Mbit serial DataFlash memory with extra 64 kbits, operating from 1.65 V to 3.6 V, supporting SPI modes 0 and 3, up to 85 MHz clock rate, and featuring a 264-byte default page size plus one 256/264-byte SRAM buffer. It enables byte/page programming, continuous array read, and sector-level protection in industrial embedded systems requiring reliable nonvolatile storage for firmware or configuration data.
For engineers reviewing the AT45DB021E-MHN-T datasheet, AT45DB021E-MHN-T pinout, AT45DB021E-MHN-T application, or AT45DB021E-MHN-T equivalent, this page delivers verified electrical specs, validated pin functions, confirmed RapidS™ timing behavior, real-world use cases in firmware storage and E2PROM emulation, and two technically documented alternative parts with precise functional and packaging distinctions.
Technical Context
The AT45DB021E-MHN-T implements a dual-buffered serial Flash architecture with one main memory array (1,024 × 256/264 bytes) and one dedicated SRAM buffer (256/264 bytes), enabling simultaneous read-modify-write operations without external RAM. Its command set supports legacy and RapidS™ high-speed read modes (0Bh opcode), low-power read (01h), and hardware/software sector lockdown.
It uses standard SPI signaling with SCK edge-triggered latching (SI on rising, SO on falling), integrates JEDEC-compliant Manufacturer and Device ID read (9Fh), and provides full protection via programmable Sector Protection Register, 128-byte OTP Security Register, and hardware WP pin control - all compliant with industrial temperature range (–40°C to +85°C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 2,162,688 bits (2 Mbit main + 64 kbit extra), organized as 1,024 pages of 256 or 264 bytes - enables flexible firmware partitioning and E2PROM emulation. |
| Supply voltage | 1.65 V to 3.6 V single supply - supports direct interface with 1.8 V and 3.3 V microcontrollers without level shifters. |
| Max clock frequency | 85 MHz (RapidS™ mode) - delivers >10 MB/s sequential read throughput for fast boot code loading. |
| Page size | User-configurable 256 or 264 bytes (factory-set) - 264-byte default includes 8-byte overhead for ECC/metadata; 256-byte option aligns with standard Flash sectors. |
| Power-down current | 200 nA ultra-deep power-down (typical) - extends battery life in always-on IoT nodes during extended sleep cycles. |
| Endurance & retention | 100,000 program/erase cycles per page minimum; 20-year data retention - suitable for field-upgradable firmware with frequent updates. |
| Operating temperature | –40°C to +85°C - certified for industrial-grade operation in automotive body controllers and factory automation PLCs. |
Pinout & Package
AT45DB021E-MHN-T is packaged in an 8-lead SOIC 150-mil wide (JEDEC MS-012AA) with gull-wing leads, 1.27 mm pitch, and RoHS-compliant green finish. Pin 1 marked by notch or dot; pin 1 = RESET, pin 2 = SCK, pin 3 = SI, pin 4 = CS, pin 5 = SO, pin 6 = GND, pin 7 = VCC, pin 8 = WP.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| RESET | Hardware reset input | Active-low asynchronous reset; pulls device into known state independent of SPI commands - critical for recovery after brown-out or watchdog timeout. |
| SCK | Serial clock input | Clocks all data transfers; SI latched on rising edge, SO driven on falling edge - ensures deterministic timing alignment with host MCU SPI peripheral. |
| SI | Serial data input | Accepts command opcodes, addresses, and write data; ignored when CS is high - eliminates spurious command execution during bus contention. |
| CS | Chip select input | Low-active enable; must transition high-to-low before command start and low-to-high after completion - enforces strict SPI transaction framing. |
| SO | Serial data output | Drives read data, status, or ID bytes; high-impedance when CS is high - allows multi-device SPI bus sharing without external tri-state logic. |
| GND | Ground reference | Primary return path for VCC and I/O; requires low-inductance connection to minimize switching noise in high-speed read bursts. |
| VCC | Power supply | 1.65–3.6 V input; decoupling capacitor (100 nF ceramic) required within 5 mm of pin - ensures stable internal charge pump operation during erase/write. |
| WP | Write protect input | Active-low hardware lock; disables all program/erase commands to protected sectors - provides tamper-resistant firmware update guardrail. |
Key Features
| Feature | Design Value |
|---|---|
| RapidS™ high-speed read | 85 MHz operation with 6 ns clock-to-output (tV) - reduces boot time by >40% vs. standard SPI Flash in MCU-based edge devices. |
| Flexible erase granularity | Page (256/264 B), block (2 kB), sector (32 kB), and chip (2 Mbit) erase - enables selective firmware patching without full reflash. |
| SRAM buffer + read-modify-write | One 256/264-byte buffer supports atomic bit/byte updates - eliminates need for external EEPROM in parameter storage applications. |
| Hardware + software sector protection | Individual sector lockdown (permanent read-only) + 128-byte OTP Security Register with 64-byte unique ID - meets IEC 62443 secure boot requirements. |
| Ultra-low power states | 200 nA ultra-deep power-down and 3 µA deep power-down - extends shelf life and runtime in battery-powered sensor nodes. |
Applications
| Firmware Storage | Configuration Parameter Storage |
|---|---|
|
Use Scenario: Storing bootloader and application firmware images in resource-constrained microcontroller systems. IC Role / Device Role / Timing Role: Nonvolatile serial memory providing sequential access to executable code during cold start and OTA updates. Use Value: 85 MHz RapidS™ read enables sub-100 ms firmware load time; sector lockdown prevents accidental corruption of bootloader region. |
Use Scenario: Retaining calibrated sensor offsets, network credentials, and user preferences across power cycles. IC Role / Device Role / Timing Role: Emulating EEPROM via SRAM buffer and read-modify-write - enabling byte-level updates without full-page erasure. Use Value: 100,000-cycle endurance and 20-year retention ensure reliable parameter persistence over product lifetime in medical devices. |
| Industrial HMI Display Buffer | Secure Boot Key Storage |
|
Use Scenario: Caching static UI assets (fonts, icons, splash screens) for low-power LCD controllers in factory HMIs. IC Role / Device Role / Timing Role: High-bandwidth serial Flash supplying burst-read graphics data to display controller DMA engines. Use Value: Continuous array read capability and 264-byte page size optimize sequential pixel stream delivery with minimal CPU overhead. |
Use Scenario: Storing cryptographic keys and secure boot certificates in automotive telematics modules. IC Role / Device Role / Timing Role: Tamper-resistant nonvolatile storage with hardware WP and sector lockdown enforcing immutable root-of-trust. Use Value: 128-byte OTP Security Register includes 64-byte factory-programmed unique identifier - satisfies UNECE R155 cybersecurity audit requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT45DB021D-MHN-T | Predecessor generation; max 66 MHz clock, no RapidS™ support, 256-byte fixed page size only. | Lacks high-speed read and flexible page sizing - unsuitable for time-critical boot or streaming applications. | Select only if legacy design compatibility or cost sensitivity outweighs performance needs. |
| W25Q20EWUXIE | 2 Mbit Quad SPI Flash; supports QPI/DTR modes, 133 MHz max, but no SRAM buffer or read-modify-write. | No built-in E2PROM emulation capability; requires external logic or firmware overhead for byte updates. | Choose when higher throughput via quad I/O is prioritized over atomic byte writes and firmware flexibility. |
Compared with AT45DB021D-MHN-T, the AT45DB021E-MHN-T delivers 29% faster read speed and configurable page size for optimized firmware layout; versus W25Q20EWUXIE, it trades quad-I/O bandwidth for integrated SRAM buffer and true byte-alterability - making it superior for parameter storage and secure boot where reliability trumps raw bandwidth.
Availability
AT45DB021E-MHN-T is available at Aetrix Electronics and suitable for firmware storage, configuration parameter retention, industrial HMI asset caching, and secure boot key management requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for AT45DB021E-MHN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The AT45DB021E belongs to Renesas' DataFlash family, designed specifically for systems needing robust, low-voltage serial Flash with integrated SRAM buffer and advanced security features - targeting firmware, configuration, and secure credential storage in harsh environments.
FAQ
What is the maximum operating frequency of the AT45DB021E-MHN-T?
The AT45DB021E-MHN-T supports up to 85 MHz in RapidS™ mode (0Bh opcode), delivering high-speed sequential reads ideal for fast firmware loading. In standard SPI mode, it operates up to 66 MHz. The 6 ns clock-to-output (tV) timing ensures minimal latency during burst reads, and the device maintains full functionality across its 1.65–3.6 V supply range at these speeds.
Does the AT45DB021E-MHN-T support true byte-level programming without erasing entire pages?
Yes, the AT45DB021E-MHN-T enables true byte-level updates via its built-in read-modify-write operation using the SRAM buffer. This three-step process - read page to buffer, modify desired bytes, then write back - avoids full-page erasure and preserves adjacent data, making AT45DB021E-MHN-T ideal for storing frequently updated parameters like calibration values or network settings.
How does sector lockdown work on the AT45DB021E-MHN-T, and is it reversible?
Sector lockdown on the AT45DB021E-MHN-T is a permanent, one-time hardware feature: once enabled via the Sector Lockdown Register (35h/36h opcodes), a sector becomes irreversibly read-only. This protects critical firmware or keys from malicious or accidental overwrite. The AT45DB021E-MHN-T includes dedicated commands to read and freeze the lockdown register, ensuring verifiable immutability required in safety-critical applications.
What package type is used for the AT45DB021E-MHN-T, and is it pin-compatible with other DataFlash variants?
The AT45DB021E-MHN-T uses an 8-lead SOIC 150-mil wide (JEDEC MS-012AA) package with standard gull-wing leads. It shares identical pinout and footprint with AT45DB021D-MHN-T and AT45DB041E-MHN-T, enabling drop-in replacement within the same DataFlash family - provided voltage, timing, and command-set compatibility are verified per application requirements.
Can the AT45DB021E-MHN-T operate reliably at 1.8 V, and what are the implications for power consumption?
Yes, the AT45DB021E-MHN-T is fully specified down to 1.65 V, making 1.8 V operation well within its guaranteed DC and AC specifications. At 1.8 V, active read current drops to ~3.2 mA (typical), standby current remains at 25 µA, and ultra-deep power-down stays at 200 nA - enabling energy-efficient designs in battery-powered edge nodes while maintaining full 85 MHz RapidS™ capability.
AT45DB021E-MHN-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 2Mbit
- Memory Organization:
- 264 Bytes x 1024 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 70 MHz
- Write Cycle Time - Word, Page:
- 8µs, 3ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-UDFN (5x6)
AT45DB021E-MHN-T FAQ
1.How can I place an order for AT45DB021E-MHN-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB021E-MHN-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB021E-MHN-T reliable?
The price and inventory of AT45DB021E-MHN-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB021E-MHN-T is usually 5 days.
3.What payment methods are accepted for AT45DB021E-MHN-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB021E-MHN-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB021E-MHN-T?
AT45DB021E-MHN-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB021E-MHN-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB021E-MHN-T?
For technical support, including AT45DB021E-MHN-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB021E-MHN-T requirements.
6.How does Aetrix verify that AT45DB021E-MHN-T is sourced from the original manufacturer or authorized distributors?
All AT45DB021E-MHN-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB021E-MHN-T meets industry standards.
7.What is the process for return or replacement of AT45DB021E-MHN-T?
All AT45DB021E-MHN-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB021E-MHN-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB021E-MHN-T part is unused and in its original packaging.
Return procedure for AT45DB021E-MHN-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AT45DB021E-MHN-T Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
