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Renesas AT45DB021E-SHN2B-T
- Part No.:
- AT45DB021E-SHN2B-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.209", 5.30mm Width)
- Datasheet:
-
AT45DB021E-SHN2B-T.pdf
- Description:
- IC FLASH 2MBIT SPI 70MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:56,957
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Product details
Overview
AT45DB021E-SHN2B-T from Renesas Electronics is a 2-Mbit serial DataFlash memory with extra 64 kbits, operating from 1.65 V to 3.6 V, supporting SPI modes 0 and 3, up to 85 MHz read speed, 6 ns clock-to-output time, and 256/264-byte configurable page size. It integrates one 256/264-byte SRAM buffer and enables byte/page programming, sector lockdown, and RapidS™ high-speed operation for embedded firmware storage in space-constrained industrial controllers.
For engineers reviewing the AT45DB021E-SHN2B-T datasheet, AT45DB021E-SHN2B-T pinout, AT45DB021E-SHN2B-T application, or AT45DB021E-SHN2B-T equivalent, key selection criteria include its dual-page-size configuration (256 vs. 264 bytes), ultra-deep power-down current (200 nA), OTP security register, sector-level hardware/software protection, and SOIC-8 150-mil package compatibility with legacy footprint designs.
Technical Context
The AT45DB021E-SHN2B-T implements a serial sequential-access architecture with two independent memory spaces: main Flash array (1,024 pages × 256/264 bytes) and a single SRAM buffer (256/264 bytes). It uses standard SPI signaling with rising-edge input latching (SI, command/address) and falling-edge output sampling (SO), supporting both legacy and RapidS™ command sets.
Its erase hierarchy includes page (256/264 B), block (2 kB), sector (32 kB), and chip (2 Mbit) levels, all self-timed. Protection is enforced via hardware WP pin control and software-configurable Sector Protection Register, plus permanent sector lockdown using a dedicated freeze mechanism and 128-byte OTP Security Register with factory-programmed 64-byte UID.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 2,162,688 bits (2 Mbit main + 64 kbit extra), organized as 1,024 pages of 256 or 264 bytes |
| Supply voltage | 1.65 V – 3.6 V single supply - enables direct interface with 1.8 V and 3.3 V logic without level shifters |
| Max read speed | 85 MHz - supports high-throughput firmware loading in boot-from-flash systems |
| Access time | 6 ns clock-to-output (tV) - ensures tight timing margins in high-frequency SPI master designs |
| Power-down current | 200 nA ultra-deep power-down (typical) - critical for battery-backed data logging nodes |
| Endurance & retention | 100,000 program/erase cycles per page; 20-year data retention - suitable for field-upgradable firmware storage |
| Page size | User-configurable: factory-set to 256 or 264 bytes - determines address alignment and buffer usage efficiency |
Pinout & Package
AT45DB021E-SHN2B-T is packaged in an 8-lead SOIC 150-mil wide (JEDEC MS-012) with exposed pad not internally connected. Pin 1 is RESET, Pin 2 is SCK, Pin 3 is SI, Pin 4 is CS, Pin 5 is SO, Pin 6 is GND, Pin 7 is VCC, Pin 8 is WP.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; must transition low before command start and high after completion - controls device selection and SO tri-state behavior |
| SCK | Serial Clock | Master-generated clock; rising edge latches SI/command, falling edge clocks SO data - defines SPI timing domain |
| SI | Serial Input | Command, address, and data input path - accepts opcodes (e.g., 0Bh for RapidS read) and payload bytes |
| SO | Serial Output | Data output path - returns memory contents, status register, or security register values |
| WP | Write Protect | Hardware sector lock override - when asserted, blocks all program/erase on protected sectors regardless of software settings |
| RESET | Hardware Reset | Asynchronous active-low reset - forces device into known state, clears internal command pipeline |
| VCC | Power Supply | 1.65–3.6 V core supply - powers logic, memory array, and I/O buffers; decoupling required per datasheet |
| GND | Ground | Reference return path - must be low-impedance connection to minimize noise coupling into SO/SI signals |
Key Features
| Feature | Design Value |
|---|---|
| RapidS™ high-speed mode | Enables continuous array reads at up to 85 MHz using opcode 0Bh - reduces firmware load latency by >3× vs. legacy E8h command |
| SRAM buffer + read-modify-write | Single 256/264-byte buffer supports atomic bit/byte updates without full-page erase - enables EEPROM emulation in Flash-based systems |
| Multi-level erase granularity | Page (256/264 B), block (2 kB), sector (32 kB), chip (2 Mbit) erase options - optimizes wear leveling and update flexibility |
| Hardware + software sector protection | WP pin enforces physical write disable; Sector Protection Register allows dynamic software locking/unlocking - provides layered security for boot code partitions |
| 128-byte OTP Security Register | 64-byte factory UID + 64-byte user-programmable space - supports secure device authentication and cryptographic key binding |
| Ultra-deep power-down mode | 200 nA typical current draw - extends battery life in always-on sensor nodes during extended idle periods |
Applications
| Firmware Storage | Secure Boot Code |
|---|---|
Use Scenario: Storing MCU application firmware in industrial PLCs where field updates occur infrequently but require guaranteed integrity. IC Role / Device Role / Timing Role: Non-volatile sequential-access memory providing boot image and runtime code storage with SPI interface. Use Value: 20-year data retention and 100K-cycle endurance ensure firmware survives decades of reprogramming; 256/264-byte page sizing aligns with common bootloader sector boundaries. | Use Scenario: Holding immutable boot loader and public key certificates in medical diagnostic equipment requiring regulatory compliance. IC Role / Device Role / Timing Role: Secure, tamper-resistant storage for verified boot assets with hardware-enforced write protection. Use Value: Sector lockdown + OTP Security Register prevent unauthorized modification; WP pin provides physical fail-safe against accidental writes during service. |
| Data Logging Buffer | Low-Power Sensor Node Memory |
Use Scenario: Capturing timestamped sensor readings in environmental monitoring gateways with intermittent connectivity. IC Role / Device Role / Timing Role: High-density, low-pin-count Flash memory acting as circular buffer for transient data before cloud upload. Use Value: Continuous array read capability enables fast bulk data dump; ultra-deep power-down (200 nA) minimizes quiescent drain between sampling intervals. | Use Scenario: Providing persistent configuration storage in battery-powered smart meters with 10+ year service life. IC Role / Device Role / Timing Role: Low-voltage (1.65 V min), low-power serial Flash for storing calibration tables and device identity. Use Value: Single-supply operation eliminates need for auxiliary regulators; 1.65 V minimum enables direct use with aging Li-ion cells down to 2.0 V system rail. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT45DB021D-SHN2B-T | Previous revision with identical pinout, 2-Mbit density, and 256/264-byte page support; lacks RapidS™ mode and has higher tV (8 ns vs. 6 ns) | Lower max clock rate (66 MHz vs. 85 MHz); no Ultra-Deep Power-Down (3 µA vs. 200 nA) | Select only if RapidS™ or sub-µA power-down is not required; verify compatibility with existing firmware timing margins. |
| W25Q20EWUXIE | 2-Mbit Quad SPI Flash with QSPI interface; supports 133 MHz DTR mode; no SRAM buffer or read-modify-write capability | Requires quad I/O routing and QSPI controller; no native EEPROM emulation - external software overhead needed for byte updates | Choose when higher bandwidth is critical and system already uses QSPI; avoid if buffer-assisted atomic updates or low-pin-count design is mandatory. |
Compared with AT45DB021D-SHN2B-T, the AT45DB021E-SHN2B-T delivers faster read throughput and deeper power savings; versus W25Q20EWUXIE, it trades quad-interface speed for simpler 3-wire SPI, integrated buffer logic, and hardware-supported byte-alterability - making it optimal for resource-constrained microcontroller systems needing reliable, low-footprint firmware storage.
Availability
AT45DB021E-SHN2B-T is available at Aetrix Electronics and suitable for industrial control firmware storage, medical device boot code retention, environmental data logging, and low-power sensor node configuration requiring stable component supply across long production lifecycles.
Supply support for AT45DB021E-SHN2B-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The AT45DB021E-SHN2B-T belongs to Renesas' DataFlash family, designed specifically for systems requiring reliable, low-pin-count serial Flash with embedded buffer functionality and robust security features for firmware and critical data storage.
FAQ
What is the default page size configured in the AT45DB021E-SHN2B-T?
The AT45DB021E-SHN2B-T ships with a default page size of 264 bytes. This can be factory pre-configured to 256 bytes upon order request. The selected size determines memory addressing structure and buffer usage - 264-byte pages include 8 bytes of overhead for ECC or metadata, while 256-byte pages align with standard Flash sector boundaries. Configuration is fixed per unit and cannot be changed in-circuit.
Does the AT45DB021E-SHN2B-T support true EEPROM emulation?
Yes, the AT45DB021E-SHN2B-T supports hardware-assisted EEPROM emulation via its built-in SRAM buffer and read-modify-write command sequence. By loading a page into the buffer, modifying specific bytes, and writing back with built-in erase, the AT45DB021E-SHN2B-T enables byte-level updates without external software overhead - eliminating the need for wear-leveling algorithms typically required with standard Flash.
How does the WP pin interact with software sector protection on the AT45DB021E-SHN2B-T?
The WP pin on the AT45DB021E-SHN2B-T acts as a hardware override: when asserted (low), it globally disables all program and erase operations on sectors marked as protected in the Sector Protection Register - regardless of software unlock state. This provides a physical fail-safe layer that complements software-based protection, ensuring boot code or calibration data remains immutable even if firmware is compromised.
What is the purpose of the 128-byte OTP Security Register in the AT45DB021E-SHN2B-T?
The 128-byte OTP Security Register in the AT45DB021E-SHN2B-T contains 64 bytes factory-programmed with a unique device identifier (UID) and 64 bytes user-programmable for keys, certificates, or secure configuration data. Once written, OTP locations cannot be altered - enabling cryptographic binding, device authentication, and anti-cloning measures. Its presence makes the AT45DB021E-SHN2B-T suitable for applications requiring hardware-rooted trust.
Can the AT45DB021E-SHN2B-T operate reliably at 1.65 V during active read cycles?
Yes, the AT45DB021E-SHN2B-T is fully specified for active operation - including read, program, and erase - across the entire 1.65 V to 3.6 V supply range. At 1.65 V, maximum read speed is reduced to 33 MHz (per AC characteristics table), and tV increases to 12 ns, but all functionality remains guaranteed. This enables direct integration with energy-harvesting or aging battery systems without voltage boosting circuitry.
AT45DB021E-SHN2B-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.209", 5.30mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 2Mbit
- Memory Organization:
- 256 Bytes x 1024 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 70 MHz
- Write Cycle Time - Word, Page:
- 8µs, 3ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AT45DB021E-SHN2B-T FAQ
1.How can I place an order for AT45DB021E-SHN2B-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB021E-SHN2B-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB021E-SHN2B-T reliable?
The price and inventory of AT45DB021E-SHN2B-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB021E-SHN2B-T is usually 5 days.
3.What payment methods are accepted for AT45DB021E-SHN2B-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB021E-SHN2B-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB021E-SHN2B-T?
AT45DB021E-SHN2B-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB021E-SHN2B-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB021E-SHN2B-T?
For technical support, including AT45DB021E-SHN2B-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB021E-SHN2B-T requirements.
6.How does Aetrix verify that AT45DB021E-SHN2B-T is sourced from the original manufacturer or authorized distributors?
All AT45DB021E-SHN2B-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB021E-SHN2B-T meets industry standards.
7.What is the process for return or replacement of AT45DB021E-SHN2B-T?
All AT45DB021E-SHN2B-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB021E-SHN2B-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB021E-SHN2B-T part is unused and in its original packaging.
Return procedure for AT45DB021E-SHN2B-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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