Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas AT45DB021E-SHN-T

Part No.:
AT45DB021E-SHN-T
Manufacturer:
Renesas
Category:
Memory
Package:
8-SOIC (0.209", 5.30mm Width)
Datasheet:
AetrixAT45DB021E-SHN-T.pdf
Description:
IC FLASH 2MBIT SPI 70MHZ 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,206

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AT45DB021E-SHN-T from Renesas Electronics is a 2-Mbit serial DataFlash memory with extra 64 kbits, operating from 1.65 V to 3.6 V, supporting SPI modes 0 and 3, up to 85 MHz clock rate, and featuring a 264-byte page size (default), 256/264-byte SRAM buffer, and RapidS™ high-speed read capability. It is used in embedded systems for firmware storage, voice logging, and configuration data retention where low pin count and ultra-low power are critical.

For engineers reviewing the AT45DB021E-SHN-T datasheet, AT45DB021E-SHN-T pinout, AT45DB021E-SHN-T application, or AT45DB021E-SHN-T equivalent, this page delivers verified electrical specs, package mapping, SPI command behavior, sector protection architecture, and real-world use-value for industrial firmware and audio buffering applications.

Technical Context

The AT45DB021E-SHN-T implements a dual-buffered sequential-access Flash architecture with one main memory array (1,024 × 256/264 bytes) and one dedicated SRAM buffer. Its RapidS™ mode enables continuous high-frequency reads at up to 85 MHz with 6 ns clock-to-output timing, while legacy and low-power read opcodes (0Bh, 03h, 01h) support flexible bandwidth/power trade-offs.

It supports three erase granularities-page (256/264 B), block (2 kB), and sector (32 kB)-plus chip erase (2 Mbits), all self-timed and suspend/resumable. Sector protection is implemented via hardware WP pin control and software-configurable registers, including permanent lockdown and 128-byte OTP security register with factory-unique 64-byte ID.

Key Specifications

Parameter Value and Actual Design Meaning
Memory capacity 2,162,688 bits (2 Mbit main + 64 kbit extra), organized as 1,024 pages of 256 or 264 bytes - enables byte-alterable E²PROM emulation via read-modify-write.
Supply voltage 1.65 V to 3.6 V single supply - eliminates need for charge pumps or external voltage translators in battery-powered or low-voltage MCU designs.
Max clock frequency 85 MHz (RapidS™ mode) - achieves >10 MB/s sustained read throughput without parallel bus overhead.
Power-down current 200 nA typical ultra-deep power-down - extends shelf life and enables multi-year operation in energy-harvesting or coin-cell devices.
Endurance & retention 100,000 program/erase cycles per page minimum; 20 years data retention - suitable for field-upgradable firmware and infrequently modified configuration storage.
Page size 264 bytes (default), factory-configurable to 256 bytes - aligns with legacy SPI Flash addressing while enabling efficient buffer-based partial-page updates.
Security features 128-byte OTP security register (64-byte factory ID + 64-byte user programmable), sector lockdown, individual sector protection - meets basic secure boot and device identity requirements.

Pinout & Package

AT45DB021E-SHN-T is packaged in an 8-lead SOIC 208-mil wide (EIAJ) body, compliant with industrial temperature range (–40°C to +85°C) and RoHS/Green standards.

Pin/Terminal Circuit Role Design Meaning
CS Chip Select Active-low enable; must transition low before command input and high after completion - controls device selection and SO high-impedance state during deselection.
SCK Serial Clock Input clock; commands, addresses, and SI data latched on rising edge; SO data output on falling edge - defines SPI timing alignment and ensures deterministic setup/hold margins.
SI Serial Input Command/address/data input line; ignored when CS is high - enables compact 3-wire interface without address bus or data direction control.
SO Serial Output Data output line; tri-stated when CS is high - allows multiple SPI slaves on shared bus without external multiplexing.
WP Write Protect Hardware sector lock enable; asserts protection for sectors defined in Sector Protection Register - provides tamper-resistant firmware write blocking independent of software state.
RESET Hardware Reset Active-low asynchronous reset; forces device into known state and clears status flags - essential for recovery from SPI bus contention or power brownout.
VCC Power Supply 1.65–3.6 V core supply; powers logic, memory array, and I/O - supports direct connection to 1.8 V or 3.3 V system rails without level shifters.
GND Ground Reference return path for VCC and I/O signals - requires low-impedance connection to minimize noise coupling into sensitive SPI timing paths.

Key Features

Feature Design Value
RapidS™ high-speed read Enables continuous 85 MHz reads with 6 ns tV - reduces firmware load latency by >3× vs. standard SPI Flash at same clock rate.
User-configurable page size Factory-set to 264 bytes (default) or 256 bytes - preserves compatibility with legacy DataFlash drivers while optimizing buffer utilization for new designs.
Buffer-to-main-memory page program Allows full 256/264-byte page writes with built-in erase - eliminates need for separate erase+program sequences, simplifying firmware update routines.
Program/erase suspend/resume Permits interrupting long erase cycles to service time-critical reads - maintains real-time responsiveness in mixed-workload embedded systems.
Individual sector lockdown Makes any sector permanently read-only after freeze command - enforces immutable bootloader or calibration data storage without runtime software enforcement.
Ultra-deep power-down mode 200 nA typical current draw - enables multi-year battery life in always-on sensor nodes or remote telemetry devices.

Applications

Firmware Storage Voice/Data Logging

Use Scenario: Storing and updating microcontroller boot code and application firmware in industrial PLCs.

IC Role / Device Role / Timing Role: Nonvolatile firmware repository accessed via SPI during cold boot and OTA updates.

Use Value: 100,000-cycle endurance and 20-year retention ensure reliable field upgrades over product lifetime; RapidS™ mode accelerates boot time by reducing flash read latency.

Use Scenario: Capturing analog sensor readings or voice snippets in battery-powered environmental monitors.

IC Role / Device Role / Timing Role: Sequential-access data sink using buffer write and page program operations.

Use Value: Low 25 µA standby current and 200 nA ultra-deep power-down extend coin-cell life beyond 5 years; 264-byte page size matches typical audio frame sizes.

Secure Configuration Storage E²PROM Emulation

Use Scenario: Holding calibrated sensor offsets, MAC addresses, and cryptographic keys in medical IoT devices.

IC Role / Device Role / Timing Role: Tamper-resistant configuration vault using OTP security register and sector lockdown.

Use Value: Factory-programmed 64-byte unique ID enables device authentication; sector lockdown prevents runtime corruption of critical parameters.

Use Scenario: Replacing discrete EEPROM in smart meter designs requiring frequent parameter updates.

IC Role / Device Role / Timing Role: Byte-alterable nonvolatile storage via internal read-modify-write sequence.

Use Value: Eliminates need for external EEPROM; 256/264-byte SRAM buffer enables atomic byte-level updates without full-page erase overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
AT45DB021D-SHN-T Predecessor generation; max 66 MHz clock, no RapidS™ mode, 60 ns tV, 1 µA deep power-down (vs. 3 µA), identical pinout and command set. Lacks high-speed read performance needed for fast boot or streaming; suitable only where <66 MHz suffices and cost sensitivity outweighs speed gain. Select AT45DB021D-SHN-T only if existing design uses it and RapidS™ is unused; migration to AT45DB021E-SHN-T requires no PCB change but enables faster firmware loads.
W25Q20EWUXIE 2 Mbit Quad SPI Flash; 133 MHz max, 4-line I/O, 1.65–1.95 V supply only, no SRAM buffer, no RapidS™ or read-modify-write. Higher bandwidth via QSPI but lacks sequential-access optimizations, buffer-based E²PROM emulation, and ultra-low deep power-down (1 µA vs. 200 nA). Choose W25Q20EWUXIE for QSPI-capable hosts needing raw throughput; avoid when buffer-assisted byte updates, low-voltage flexibility below 1.8 V, or nanoamp power-down are required.

Compared with AT45DB021D-SHN-T, the AT45DB021E-SHN-T delivers 29% higher clock rate and 10× lower ultra-deep power-down current; versus W25Q20EWUXIE, it offers unique SRAM-buffered sequential access and true byte-alterability - making it irreplaceable for E²PROM-emulation and ultra-low-power logging.

Availability

AT45DB021E-SHN-T is available at Aetrix Electronics and suitable for firmware storage, voice/data logging, and secure configuration storage requiring stable component supply across industrial, medical, and IoT product lifecycles.

Supply support for AT45DB021E-SHN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The AT45DB021E-SHN-T belongs to Renesas' DataFlash family, designed specifically for low-pin-count, low-voltage, sequential-access nonvolatile storage in resource-constrained embedded systems.

FAQ

What is the default page size of the AT45DB021E-SHN-T?

The AT45DB021E-SHN-T ships with a default page size of 264 bytes, which supports standard DataFlash addressing and enables efficient use of its integrated 256/264-byte SRAM buffer. This size can be factory pre-configured to 256 bytes for legacy compatibility, but the AT45DB021E-SHN-T delivered in SHN-T packaging retains the 264-byte default unless otherwise specified in order documentation.

Does the AT45DB021E-SHN-T support true byte-level programming without erasing entire pages?

No - the AT45DB021E-SHN-T does not support direct byte programming. However, it enables E²PROM emulation through a self-contained three-step read-modify-write operation: first read a page into the SRAM buffer, modify desired bytes, then write the updated buffer back to main memory. This process is atomic and handled internally, eliminating host-side erase management.

What is the purpose of the RapidS™ mode in the AT45DB021E-SHN-T?

RapidS™ mode in the AT45DB021E-SHN-T enables continuous high-speed reads at up to 85 MHz with a maximum clock-to-output time (tV) of 6 ns. It uses opcode 0Bh and is optimized for streaming applications like firmware loading or audio playback, delivering significantly higher effective throughput than legacy read commands (03h, 01h) while maintaining full SPI mode 0/3 compatibility.

How does sector lockdown work on the AT45DB021E-SHN-T?

Sector lockdown on the AT45DB021E-SHN-T is a hardware-enforced, irreversible protection mechanism. Once activated via the Sector Lockdown Register and frozen, a designated sector becomes permanently read-only - even if WP is deasserted or power is cycled. This feature is used to safeguard bootloader code or calibration data that must never be overwritten, and it operates independently of software control after freeze.

What power-down modes does the AT45DB021E-SHN-T support, and what are their current draws?

The AT45DB021E-SHN-T supports two ultra-low-power states: Deep Power-Down (3 µA typical) and Ultra-Deep Power-Down (200 nA typical). Both are entered via dedicated SPI commands (B9h and 79h respectively) and exited with hardware RESET or CS pulse. These modes are critical for battery-operated devices requiring multi-year shelf life or intermittent wake-up operation.

AT45DB021E-SHN-T Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-SOIC (0.209", 5.30mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
2Mbit
Memory Organization:
264 Bytes x 1024 pages
Memory Interface:
SPI
Clock Frequency:
70 MHz
Write Cycle Time - Word, Page:
8µs, 3ms
Access Time:
-
Voltage - Supply:
1.65V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

AT45DB021E-SHN-T FAQ

1.How can I place an order for AT45DB021E-SHN-T through Aetrix?

Please submit a Request for Quotation (RFQ) for AT45DB021E-SHN-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AT45DB021E-SHN-T reliable?

The price and inventory of AT45DB021E-SHN-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB021E-SHN-T is usually 5 days.

3.What payment methods are accepted for AT45DB021E-SHN-T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB021E-SHN-T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AT45DB021E-SHN-T?

AT45DB021E-SHN-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AT45DB021E-SHN-T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AT45DB021E-SHN-T?

For technical support, including AT45DB021E-SHN-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB021E-SHN-T requirements.

6.How does Aetrix verify that AT45DB021E-SHN-T is sourced from the original manufacturer or authorized distributors?

All AT45DB021E-SHN-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB021E-SHN-T meets industry standards.

7.What is the process for return or replacement of AT45DB021E-SHN-T?

All AT45DB021E-SHN-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB021E-SHN-T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AT45DB021E-SHN-T part is unused and in its original packaging.

Return procedure for AT45DB021E-SHN-T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AT45DB021E-SHN-T Tags

  • AT45DB021E-SHN-T
  • AT45DB021E-SHN-T PDF
  • AT45DB021E-SHN-T Datasheet
  • AT45DB021E-SHN-T Specifications
  • AT45DB021E-SHN-T Images
  • Renesas
  • Renesas AT45DB021E-SHN-T
  • Buy AT45DB021E-SHN-T
  • AT45DB021E-SHN-T Price
  • AT45DB021E-SHN-T Distributor
  • AT45DB021E-SHN-T Supplier
  • AT45DB021E-SHN-T Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER